公开(公告)号：US20090266398A1

公开(公告)日：2009-10-29

申请号：US12111161

申请日：2008-04-28

申请人： Burak Metin ,  Mukundan Narasimhan ,  Mustafa Pinarbasi ,  Bulent M. Basol

发明人： Burak Metin ,  Mukundan Narasimhan ,  Mustafa Pinarbasi ,  Bulent M. Basol

IPC分类号： H01L31/042

CPC分类号： H01L31/0749 ,  H01L31/022425 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03928 ,  H01L31/0504 ,  H01L31/0512 ,  Y02E10/541

摘要： An apparatus for and a method of interconnecting at least two solar cells using contact areas which are formed on the conductive substrates of the solar cells is described. The contact areas are formed by a material removal process which removes high resistance surface layers of the conductive substrates at the contact areas. A stringing process serially interconnects the solar cells by connecting each contact area that is cleared of high resistance surface layer to the terminal of one of the adjacent solar cells.

摘要翻译： 描述了使用形成在太阳能电池的导电基板上的接触区域来互连至少两个太阳能电池的装置和方法。 接触区域通过去除接触区域上的导电基板的高电阻表面层的材料去除工艺形成。 串联过程通过将清除高电阻表面层的每个接触区域连接到相邻太阳能电池之一的端子来串联互连太阳能电池。

公开(公告)号：US20080062584A1

公开(公告)日：2008-03-13

申请号：US11938690

申请日：2007-11-12

申请人： James Freitag ,  Wipul Jayasekara ,  Mustafa Pinarbasi

发明人： James Freitag ,  Wipul Jayasekara ,  Mustafa Pinarbasi

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/398 ,  G11B2005/0016 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing a magnetoresistive sensor having improved pinned layer stability at small track widths. The sensor has substantially vertical side walls that define the track width of the sensor. The free layer terminates at the substantially vertical side walls, but the pinned layer structure or a portion thereof extends beyond the track width region into the field. The extended pinned layer structure provides improved resistance to amplitude flipping, while allowing the track width to remain small.

摘要翻译： 一种用于制造磁阻传感器的方法，其具有在小轨道宽度下具有改进的钉扎层稳定性。 该传感器具有限定传感器的轨道宽度的基本上垂直的侧壁。 自由层在基本上垂直的侧壁处终止，但被钉扎层结构或其一部分延伸超过轨道宽度区域进入场。 扩展的钉扎层结构提供改善的振幅翻转阻力，同时允许轨道宽度保持较小。

公开(公告)号：US20080002310A1

公开(公告)日：2008-01-03

申请号：US11899283

申请日：2007-09-04

申请人： Marie-Claire Cyrille ,  Wipul Jayasckara ,  Mustafa Pinarbasi

发明人： Marie-Claire Cyrille ,  Wipul Jayasckara ,  Mustafa Pinarbasi

IPC分类号： G11B5/127 ,  G11B5/39

CPC分类号： G11B5/3932 ,  G11B5/3903 ,  G11B5/398 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method is disclosed for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack.

摘要翻译： 公开了一种用于制造具有读取头传感器和硬偏置层的磁盘驱动器的读取头的方法，其中读取头在读取头传感器和硬偏置层之间具有成形结。 该方法包括提供待成形的分层晶片叠层。 没有底切的单层或多层光致抗蚀剂掩模沉积在待成形的分层晶片叠层上。 分层晶片堆叠通过铣削源的输出成形，其中成形包括部分铣削以在部分铣削范围内以形成成形接合部。 然后沉积与晶片叠层的成形结接触的硬偏压层。

公开(公告)号：US20070253123A1

公开(公告)日：2007-11-01

申请号：US11784733

申请日：2007-04-09

申请人： James Freitag ,  Mustafa Pinarbasi

发明人： James Freitag ,  Mustafa Pinarbasi

IPC分类号： G11B5/127

CPC分类号： G11B5/3932 ,  G11B5/3163 ,  G11B5/3909 ,  G11B2005/3996

摘要： A read sensor of the current-perpendicular-to-the-planes (CPP) type includes a sensor stack structure formed in a central region between first and second shield layers which serve as leads for the read sensor; insulator layers formed in side regions adjacent the central region; seed layer structures formed over the insulator layers in the side regions; and hard bias layers formed over the seed layer structures in the side regions. The hard bias layers are made of a nitrogenated cobalt-based alloy, such as nitrogenated cobalt-platinum (CoPt). Suitable if not exemplary coercivity and squareness properties are exhibited using the nitrogenated cobalt-based alloy. The hard bias layers may be formed by performing an ion beam deposition of cobalt-based materials using a sputtering gas (e.g. xenon) and nitrogen as a reactive gas.

摘要翻译： 电流垂直平面（CPP）类型的读取传感器包括形成在用作读取传感器的引线的第一和第二屏蔽层之间的中心区域中的传感器堆叠结构; 形成在邻近中心区域的侧面区域中的绝缘体层; 种子层结构形成在侧面区域上的绝缘体层上; 以及在侧面区域上形成在种子层结构上的硬偏压层。 硬偏压层由氮化钴基合金如氮化钴 - 铂（CoPt）制成。 使用含氮钴基合金表现出适当的矫顽力和矩形特性。 可以通过使用溅射气体（例如氙）和氮作为反应气体进行钴基材料的离子束沉积来形成硬偏置层。

公开(公告)号：US20070183099A1

公开(公告)日：2007-08-09

申请号：US11732993

申请日：2007-04-05

申请人： Mustafa Pinarbasi

发明人： Mustafa Pinarbasi

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetic head with improved hard magnet properties includes a sensor stack structure of current-perpendicular-to-the-planes (CPP) type formed in a central region between first and second shield layers, and a multi-layered seed layer structure formed in side regions adjacent the central region. The multi-layered structure has a first layer including nitrogenated nickel-tantalum (NiTa+N) and a second layer including chromium-molybdenum (CrMo), which are formed over an insulator in the side regions. A hard bias layer formed over the multi-layered structure is preferably a cobalt-based alloy. Methods of making the magnetic head are also described.

摘要翻译： 具有改善的硬磁性能的磁头包括形成在第一和第二屏蔽层之间的中心区域中的电流垂直于平面（CPP）型的传感器堆叠结构，以及形成在侧面的多层种子层结构 邻近中部地区的地区。 多层结构具有包括氮化镍 - 钽（NiTa + N）的第一层和包含铬 - 钼（CrMo）的第二层，其在侧面区域中形成在绝缘体上。 在多层结构上形成的硬偏置层优选为钴基合金。 还描述了制造磁头的方法。

公开(公告)号：US20070146939A1

公开(公告)日：2007-06-28

申请号：US11320547

申请日：2005-12-27

申请人： Mustafa Pinarbasi

发明人： Mustafa Pinarbasi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/398 ,  G01R33/09 ,  G11B5/3906

摘要： A current perpendicular to plane (CPP) magnetoresistive sensor that avoids spin torque noise while having high dr/R performance and small gap. The sensor is a dual magnetoresistive sensor having first and second pinned layers and a free layer disposed between the two pinned layers. One of the pinned layers is pinned by exchange coupling with an AFM layer, while the other pinned layer is self pinned by a shape enhanced magnetic anisotropy without the use of an AFM layer. The self pinned layer extends from the ABS to an extended stripe height distance that is greater than the stripe height distance of the AFM pinned layer and the free layer.

摘要翻译： 垂直于平面（CPP）磁阻传感器的电流避免了自旋转矩噪声，同时具有较高的dr / R性能和较小的间隙。 传感器是具有第一和第二被钉扎层和设置在两个固定层之间的自由层的双磁阻传感器。 被钉扎层之一通过与AFM层的交换耦合固定，而另一个被钉扎层由不增加AFM层的形状增强的磁各向异性自身固定。 自固定层从ABS延伸到比AFM钉扎层和自由层的条带高度距离更大的延长条纹高度距离。

公开(公告)号：US20070109692A1

公开(公告)日：2007-05-17

申请号：US11283033

申请日：2005-11-17

申请人： Matthew Carey ,  Jeffrey Childress ,  James Freitag ,  Stefan Maat ,  Mustafa Pinarbasi

发明人： Matthew Carey ,  Jeffrey Childress ,  James Freitag ,  Stefan Maat ,  Mustafa Pinarbasi

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive sensor having improved pinning field strength. The sensor includes a pinned layer structure pinned by exchange coupling with an antiferromagnetic (AFM) layer. The AFM layer is constructed upon an under layer having treated surface with an anisotropic roughness. The anisotropic roughness, produced by an angled ion etch, results in improved pinning strength. The underlayer may include a seed layer and a thin layer of crystalline material such as PtMn formed over the seed layer. The magnetic layer may include a first sub-layer of NiFeCr and a second sub-layer of NiFe formed there over. The present invention also includes a magnetoresistive sensor having a magnetic layer deposited on an underlayer (such as a non-magnetic spacer) having a surface treated with an anisotropic texture. An AFM layer is then deposited over the magnetic layer. The magnetic layer is then strongly pinned by a combination of exchange coupling with the AFM layer and a strong anisotropy provided by the surface texture of the underlayer. Such a structure can be used for example in a sensor having a pinned layer structure formed above the free layer, or in a sensor having an in stack bias structure.

摘要翻译： 具有改善的钉扎场强的磁阻传感器。 传感器包括通过与反铁磁（AFM）层的交换耦合固定的钉扎层结构。 AFM层被构造在具有各向异性粗糙度的处理表面的底层上。 通过角度离子蚀刻产生的各向异性粗糙度导致改善的钉扎强度。 底层可以包括种子层和在种子层上形成的诸如PtMn的薄层结晶材料。 磁性层可以包括NiFeCr的第一子层和在其上形成的NiFe的第二子层。 本发明还包括具有沉积在具有用各向异性纹理处理的表面的底层（例如非磁性间隔物）上的磁性层的磁阻传感器。 然后将AFM层沉积在磁性层上。 然后通过与AFM层的交换耦合的组合强烈地钉住磁性层，并且由底层的表面纹理提供强烈的各向异性。 这种结构可以用于例如具有形成在自由层上方的钉扎层结构的传感器中，或者在具有堆叠偏压结构的传感器中。

公开(公告)号：US20070035894A1

公开(公告)日：2007-02-15

申请号：US11200796

申请日：2005-08-09

申请人： James Freitag ,  Mustafa Pinarbasi

发明人： James Freitag ,  Mustafa Pinarbasi

IPC分类号： G11B5/33

CPC分类号： G01R33/093

摘要： A magnetoresistive sensor having a magnetically anisotropic pinned layer structure. The pinned layer structure is formed over a seed layer having a surface that has been treated to texture the surface of the seed layer with an anisotropic roughness. This anisotropic roughness induces the magnetic anisotropy in the pinned layers. The treated seed layers also allow the pinned layer to maintain robust pinning without the need for a thick AFM layer, thereby reducing gap size.

摘要翻译： 具有磁各向异性固定层结构的磁阻传感器。 钉扎层结构形成在具有已经被处理以用各向异性粗糙度纹理种子层的表面的表面的籽晶层上。 这种各向异性的粗糙度引起钉扎层中的磁各向异性。 经处理的种子层还允许钉扎层保持坚固的钉扎，而不需要厚的AFM层，从而减小间隙尺寸。

公开(公告)号：US20060245115A1

公开(公告)日：2006-11-02

申请号：US11479318

申请日：2006-06-29

申请人： Ashok Lahiri ,  Mustafa Pinarbasi

发明人： Ashok Lahiri ,  Mustafa Pinarbasi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3912

摘要： In a lead overlay (LOL) type of read head first and second insulation layers are employed with the first insulation layer being located between a top surface of a first hard bias layer and a first lead layer and the second insulation layer is located between the top surface of a second hard bias layer and a second lead layer for minimizing a shunting of a sense current through the hard bias layers into a read sensor.

公开(公告)号：US20060168794A1

公开(公告)日：2006-08-03

申请号：US11046421

申请日：2005-01-28

申请人： Richard Contreras ,  Michael Feldbaum ,  Mustafa Pinarbasi

发明人： Richard Contreras ,  Michael Feldbaum ,  Mustafa Pinarbasi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.