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    Solar cell buffer layer having varying composition
    3.
    发明授权
    Solar cell buffer layer having varying composition 失效
    具有不同组成的太阳能电池缓冲层

    公开(公告)号：US08318530B2

    公开(公告)日：2012-11-27

    申请号：US12843778

    申请日：2010-07-26

    申请人： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

    发明人： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

    IPC分类号： H01L21/00

    CPC分类号： H01L31/206 ,  C23C18/12 ,  C23C18/1204 ,  C23C18/125 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

    摘要： Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

    摘要翻译： 描述了一种连续的无电沉积方法，并且提供了通过其厚度形成具有不同组成的太阳能电池缓冲层的系统。 通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。 在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于 一对一的滚动时尚。 在另一个实例中，包括第一透明导电膜如铝掺杂氧化锌和第二透明导电膜如氧化铟锡的透明导电层沉积在具有不同组成的缓冲层上。

    METHOD OF FORMING TRANSPARENT ZINC OXIDE LAYERS FOR HIGH EFFICIENCY PHOTOVOLTAIC CELLS
    4.
    发明申请
    METHOD OF FORMING TRANSPARENT ZINC OXIDE LAYERS FOR HIGH EFFICIENCY PHOTOVOLTAIC CELLS 审中-公开
    形成用于高效光伏电池的透明氧化锌层的方法

    公开(公告)号：US20110108099A1

    公开(公告)日：2011-05-12

    申请号：US12616578

    申请日：2009-11-11

    申请人： Mustafa Pinarbasi ,  James Freitag

    发明人： Mustafa Pinarbasi ,  James Freitag

    IPC分类号： H01L31/00 ,  H01L21/283

    CPC分类号： H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

    摘要： A solar cell including a high electrical resistivity transparent layer formed on a CdS buffer layer is provided. The high electrical resistivity transparent layer includes an intrinsic oxide film formed on the buffer layer and an intermediate oxide film formed on the intrinsic oxide film. The intrinsic oxide film includes undoped zinc oxide and has a thickness range of 10 to 40 nm. The intermediate oxide film includes semi-intrinsic zinc oxide doped with aluminum and has a thickness range of 50-150 nm. The intermediate oxide film has an aluminum concentration of less than 1000 ppm.

    摘要翻译： 提供了包括形成在CdS缓冲层上的高电阻率透明层的太阳能电池。 高电阻率透明层包括形成在缓冲层上的本征氧化膜和形成在本征氧化膜上的中间氧化膜。 本发明的氧化物膜包括未掺杂的氧化锌，其厚度范围为10〜40nm。 中间氧化膜包括掺杂有铝的半固有氧化锌，其厚度范围为50-150nm。 中间氧化膜的铝浓度小于1000ppm。

    METHOD AND APPARATUS FOR DEPOSITION OF GRADED OR MULTI-LAYER TRANSPARENT FILMS
    5.
    发明申请
    METHOD AND APPARATUS FOR DEPOSITION OF GRADED OR MULTI-LAYER TRANSPARENT FILMS 失效
    沉积层或多层透明膜的方法和装置

    公开(公告)号：US20110039366A1

    公开(公告)日：2011-02-17

    申请号：US12843778

    申请日：2010-07-26

    申请人： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

    发明人： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

    IPC分类号： H01L31/18 ,  H01L31/0264

    CPC分类号： H01L31/206 ,  C23C18/12 ,  C23C18/1204 ,  C23C18/125 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

    摘要： In one embodiment, a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another embodiment, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

    摘要翻译： 在一个实施例中，提供连续的无电沉积方法和通过其厚度形成具有变化的组成的太阳能电池缓冲层的系统。 通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。 在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于 一对一的滚动时尚。 在另一个实施例中，包含第一透明导电膜（例如掺杂铝的氧化锌）和第二透明导电膜（例如氧化铟锡）的透明导电层以不同的组成沉积在缓冲层上。

    Magnetoresitive sensor having an enhanced lead overlay design and shape enhanced pinning
    6.
    发明申请
    Magnetoresitive sensor having an enhanced lead overlay design and shape enhanced pinning 失效
    具有增强的引线覆盖设计和形状的磁阻传感器增强了钉扎

    公开(公告)号：US20070127167A1

    公开(公告)日：2007-06-07

    申请号：US11297151

    申请日：2005-12-07

    申请人： James Freitag ,  Kuok Ho ,  Mustafa Pinarbasi ,  Ching Tsang

    发明人： James Freitag ,  Kuok Ho ,  Mustafa Pinarbasi ,  Ching Tsang

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/398

    摘要： A magnetoresistive sensor having a lead overlay defined trackwidth and a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments. The lead overlay design allows narrow, accurate trackwidth definition.

    摘要翻译： 磁阻传感器具有引线覆盖层限定的轨道宽度和延伸超过由传感器的自由层限定的条带高度的钉扎层。 延伸的钉扎层具有强烈的形状诱导的各向异性，保持钉扎层力矩的钉扎。 被钉扎层的延伸部分具有超过条带高度的侧面，其在条纹高度内完全与传感器的侧面对准。 通过使用掩模结构用于多于一个制造阶段的制造方法，可以实现这种完美的对准，从而消除了对多个掩模对准的需要。 引线覆盖设计允许窄的，准确的轨道宽度定义。

    Magnetic head having a layered hard bias layer exhibiting reduced noise
    7.
    发明申请
    Magnetic head having a layered hard bias layer exhibiting reduced noise 失效
    具有分层硬偏置层的磁头具有降低的噪声

    公开(公告)号：US20050264955A1

    公开(公告)日：2005-12-01

    申请号：US10856710

    申请日：2004-05-28

    申请人： James Freitag ,  James Nix ,  Mustafa Pinarbasi

    发明人： James Freitag ,  James Nix ,  Mustafa Pinarbasi

    IPC分类号： G11B5/127 ,  G11B5/31 ,  G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093

    摘要： A magnetic head having an improved read head structure. The read head includes a free magnetic layer with hard bias elements disposed proximate its ends, where the hard bias elements include an improved hard bias magnetic grain structure. This is accomplished by fabricating the hard bias element as a bilayer structure having a first hard bias sublayer, a nonmagnetic midlayer and a second hard bias sublayer. The midlayer is preferably composed of a nonmagnetic material such as chromium, and the hard bias sublayers are composed of a magnetic material such as CoPtCr. Each sublayer is formed with its own magnetic grains, and because there are two sublayers, the hard bias element is fabricated with approximately twice the number of magnetic grains as the prior art single layer hard bias element.

    摘要翻译： 具有改进的读头结构的磁头。 读头包括具有靠近其端部设置的硬偏置元件的自由磁性层，其中硬偏置元件包括改进的硬偏磁晶粒结构。 这是通过将硬偏压元件制造成具有第一硬偏压子层，非磁性中间层和第二硬偏压子层的双层结构来实现的。 中间层优选由诸如铬的非磁性材料构成，并且硬偏置子层由诸如CoPtCr的磁性材料构成。 每个子层由其自身的磁性颗粒形成，并且由于存在两个子层，所以用现有技术的单层硬偏置元件的大约两倍的磁性颗粒制造硬偏置元件。

    High coercivity hard magnetic seedlayer
    10.
    发明申请
    High coercivity hard magnetic seedlayer 有权
    高矫顽力硬磁层

    公开(公告)号：US20070206335A1

    公开(公告)日：2007-09-06

    申请号：US11366099

    申请日：2006-03-02

    申请人： James Freitag ,  Mustafa Pinarbasi

    发明人： James Freitag ,  Mustafa Pinarbasi

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/30 ,  H01F10/3268

    摘要： Methods and apparatus provide improved properties of a hard bias layer of a magnetoresistance sensor. The properties of the hard bias layer are improved by using a multilayer seed structure that includes a chromium-containing layer disposed between two tungsten-containing layers.

    摘要翻译： 方法和装置提供了磁阻传感器的硬偏置层的改进的特性。 通过使用包括设置在两个含钨层之间的含铬层的多层种子结构来改善硬偏置层的性质。