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1.发明申请METHOD FOR MANUFACTURING A MAGNETORESISTIVE SENSOR HAVING A NOVEL JUNCTION STRUCTURE FOR IMPROVED TRACK WIDTH DEFINITION AND PINNED LAYER STABILITY 失效用于制造具有改进的轨道宽度定义和引导层稳定性的新型结构结构的磁传感器的方法公开(公告)号：US20080062584A1
公开(公告)日：2008-03-13
申请号：US11938690
申请日：2007-11-12
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/398 , G11B2005/0016 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magnetoresistive sensor having improved pinned layer stability at small track widths. The sensor has substantially vertical side walls that define the track width of the sensor. The free layer terminates at the substantially vertical side walls, but the pinned layer structure or a portion thereof extends beyond the track width region into the field. The extended pinned layer structure provides improved resistance to amplitude flipping, while allowing the track width to remain small.
摘要翻译： 一种用于制造磁阻传感器的方法，其具有在小轨道宽度下具有改进的钉扎层稳定性。 该传感器具有限定传感器的轨道宽度的基本上垂直的侧壁。 自由层在基本上垂直的侧壁处终止，但被钉扎层结构或其一部分延伸超过轨道宽度区域进入场。 扩展的钉扎层结构提供改善的振幅翻转阻力，同时允许轨道宽度保持较小。
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2.发明申请Magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability 审中-公开磁阻传感器具有新颖的结构结构，可改善轨道宽度的定义和固定层的稳定性公开(公告)号：US20060158790A1
公开(公告)日：2006-07-20
申请号：US11035771
申请日：2005-01-14
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/398 , G11B2005/0016 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having improved pinned layer stability at small track widths. The sensor has substantially vertical side walls that define the track width of the sensor. The free layer terminates at the substantially vertical side walls, but the pinned layer structure or a portion thereof extends beyond the track width region into the field. The extended pinned layer structure provides improved resistance to amplitude flipping, while allowing the track width to remain small.
摘要翻译： 一种磁阻传感器，在小轨道宽度下具有改进的固定层稳定性。 该传感器具有限定传感器的轨道宽度的基本上垂直的侧壁。 自由层在基本上垂直的侧壁处终止，但被钉扎层结构或其一部分延伸超过轨道宽度区域进入场。 扩展的钉扎层结构提供改善的振幅翻转阻力，同时允许轨道宽度保持较小。
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公开(公告)号：US20070048624A1
公开(公告)日：2007-03-01
申请号：US11211877
申请日：2005-08-24
申请人： Tsung Chen , Frederick Dill , James Frietag , Kuok San Ho , Wipul Jayasekara , Kim Lee , Mustafa Pinarbasi , Ching Tsang , Pactrick Webb
发明人： Tsung Chen , Frederick Dill , James Frietag , Kuok San Ho , Wipul Jayasekara , Kim Lee , Mustafa Pinarbasi , Ching Tsang , Pactrick Webb
CPC分类号： G11B5/3932 , G11B5/3929 , G11B5/398 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.
摘要翻译： 本发明的一个实施例是具有覆盖的引线焊盘的磁头，该焊盘在硬质合金结构之间接触传感器的顶表面，并且不接触与传感器直接接触的电绝缘的硬质合金结构。 传感器顶部的引线焊盘接触区域由导电材料的侧壁沉积限定，以在形成其余引线之前在光致抗蚀剂上形成引线焊盘。 用于引线焊盘的导电材料以浅角度沉积，以使光致抗蚀剂上的侧壁沉积最大化，然后以高角度离子研磨，以从外界移除导电材料，同时留下侧壁材料。 绝缘层以高角度沉积在引线材料上，然后以浅角度铣削以除去与侧壁的绝缘。
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4.发明申请Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process 失效使用反应离子铣削工艺制造用于磁头的改进的传感器的方法公开(公告)号：US20060218776A1
公开(公告)日：2006-10-05
申请号：US11095979
申请日：2005-03-30
CPC分类号： G11B5/3903 , G11B5/3163 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer. A reactive ion milling step is then conducted to remove the unmasked portions of the stencil layer. Where the stencil layer is composed of an organic compound, such as Duramide and/or diamond-like-carbon, a reactive ion milling step utilizing oxygen species produces a stencil of the present invention having exceptionally straight side walls with practically no undercuts. Thereafter, an ion milling step is undertaken in which the sensor layers that are not covered by the stencil are removed. The accurately formed stencil results in correspondingly accurately formed side walls of the remaining central sensor layers. A magnetic head sensor structure having a desired read track width and accurately formed side walls is thus fabricated.
摘要翻译： 一种磁头制造工艺，其中模版层沉积在多个传感器层上。 在模板层上制造具有所需读取磁道宽度的光致抗蚀剂掩模。 然后进行反应离子研磨步骤以去除模板层的未掩模部分。 当模板层由有机化合物如Duramide和/或类金刚石碳构成时，利用氧气的反应离子研磨步骤产生具有非常直的侧壁的本发明的蜡纸，实际上没有底切。 此后，进行离子研磨步骤，其中未被模板覆盖的传感器层被去除。 准确地形成的模板导致剩余的中央传感器层的相应精确地形成的侧壁。 因此制造了具有期望的读取磁道宽度和精确形成的侧壁的磁头传感器结构。
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5.发明申请Read head having shaped read sensor-biasing layer junctions using partial milling and method of fabrication 失效读头使用部分铣削和制造方法成形读取传感器偏置层结公开(公告)号：US20060067009A1
公开(公告)日：2006-03-30
申请号：US10952427
申请日：2004-09-27
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is disclosed for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack. A read head and a magnetic hard disk drive having a read head layer stack which has been partially milled are also disclosed.
摘要翻译： 公开了一种用于制造具有读取头传感器和硬偏置层的磁盘驱动器的读取头的方法，其中读取头在读取头传感器和硬偏置层之间具有成形结。 该方法包括提供待成形的分层晶片叠层。 没有底切的单层或多层光致抗蚀剂掩模沉积在待成形的分层晶片叠层上。 分层晶片堆叠通过铣削源的输出成形，其中成形包括部分铣削以在部分铣削范围内以形成成形接合部。 然后沉积与晶片叠层的成形结接触的硬偏压层。 还公开了一种具有已经被部分铣削的读取头层堆叠的读取头和磁性硬盘驱动器。
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公开(公告)号：US08318530B2
公开(公告)日：2012-11-27
申请号：US12843778
申请日：2010-07-26
IPC分类号： H01L21/00
CPC分类号： H01L31/206 , C23C18/12 , C23C18/1204 , C23C18/125 , H01L31/022475 , H01L31/022483 , H01L31/0322 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.
摘要翻译： 描述了一种连续的无电沉积方法，并且提供了通过其厚度形成具有不同组成的太阳能电池缓冲层的系统。 通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。 在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于 一对一的滚动时尚。 在另一个实例中，包括第一透明导电膜如铝掺杂氧化锌和第二透明导电膜如氧化铟锡的透明导电层沉积在具有不同组成的缓冲层上。
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7.发明申请METHOD OF FORMING TRANSPARENT ZINC OXIDE LAYERS FOR HIGH EFFICIENCY PHOTOVOLTAIC CELLS 审中-公开形成用于高效光伏电池的透明氧化锌层的方法公开(公告)号：US20110108099A1
公开(公告)日：2011-05-12
申请号：US12616578
申请日：2009-11-11
申请人： Mustafa Pinarbasi , James Freitag
发明人： Mustafa Pinarbasi , James Freitag
IPC分类号： H01L31/00 , H01L21/283
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： A solar cell including a high electrical resistivity transparent layer formed on a CdS buffer layer is provided. The high electrical resistivity transparent layer includes an intrinsic oxide film formed on the buffer layer and an intermediate oxide film formed on the intrinsic oxide film. The intrinsic oxide film includes undoped zinc oxide and has a thickness range of 10 to 40 nm. The intermediate oxide film includes semi-intrinsic zinc oxide doped with aluminum and has a thickness range of 50-150 nm. The intermediate oxide film has an aluminum concentration of less than 1000 ppm.
摘要翻译： 提供了包括形成在CdS缓冲层上的高电阻率透明层的太阳能电池。 高电阻率透明层包括形成在缓冲层上的本征氧化膜和形成在本征氧化膜上的中间氧化膜。 本发明的氧化物膜包括未掺杂的氧化锌，其厚度范围为10〜40nm。 中间氧化膜包括掺杂有铝的半固有氧化锌，其厚度范围为50-150nm。 中间氧化膜的铝浓度小于1000ppm。
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8.发明申请公开(公告)号：US20110039366A1
公开(公告)日：2011-02-17
申请号：US12843778
申请日：2010-07-26
IPC分类号： H01L31/18 , H01L31/0264
CPC分类号： H01L31/206 , C23C18/12 , C23C18/1204 , C23C18/125 , H01L31/022475 , H01L31/022483 , H01L31/0322 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： In one embodiment, a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another embodiment, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.
摘要翻译： 在一个实施例中，提供连续的无电沉积方法和通过其厚度形成具有变化的组成的太阳能电池缓冲层的系统。 通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。 在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于 一对一的滚动时尚。 在另一个实施例中，包含第一透明导电膜（例如掺杂铝的氧化锌）和第二透明导电膜（例如氧化铟锡）的透明导电层以不同的组成沉积在缓冲层上。
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9.发明申请Magnetoresitive sensor having an enhanced lead overlay design and shape enhanced pinning 失效具有增强的引线覆盖设计和形状的磁阻传感器增强了钉扎公开(公告)号：US20070127167A1
公开(公告)日：2007-06-07
申请号：US11297151
申请日：2005-12-07
申请人： James Freitag , Kuok Ho , Mustafa Pinarbasi , Ching Tsang
发明人： James Freitag , Kuok Ho , Mustafa Pinarbasi , Ching Tsang
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/398
摘要： A magnetoresistive sensor having a lead overlay defined trackwidth and a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments. The lead overlay design allows narrow, accurate trackwidth definition.
摘要翻译： 磁阻传感器具有引线覆盖层限定的轨道宽度和延伸超过由传感器的自由层限定的条带高度的钉扎层。 延伸的钉扎层具有强烈的形状诱导的各向异性，保持钉扎层力矩的钉扎。 被钉扎层的延伸部分具有超过条带高度的侧面，其在条纹高度内完全与传感器的侧面对准。 通过使用掩模结构用于多于一个制造阶段的制造方法，可以实现这种完美的对准，从而消除了对多个掩模对准的需要。 引线覆盖设计允许窄的，准确的轨道宽度定义。
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10.发明申请公开(公告)号：US20050264955A1
公开(公告)日：2005-12-01
申请号：US10856710
申请日：2004-05-28
申请人： James Freitag , James Nix , Mustafa Pinarbasi
发明人： James Freitag , James Nix , Mustafa Pinarbasi
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093
摘要： A magnetic head having an improved read head structure. The read head includes a free magnetic layer with hard bias elements disposed proximate its ends, where the hard bias elements include an improved hard bias magnetic grain structure. This is accomplished by fabricating the hard bias element as a bilayer structure having a first hard bias sublayer, a nonmagnetic midlayer and a second hard bias sublayer. The midlayer is preferably composed of a nonmagnetic material such as chromium, and the hard bias sublayers are composed of a magnetic material such as CoPtCr. Each sublayer is formed with its own magnetic grains, and because there are two sublayers, the hard bias element is fabricated with approximately twice the number of magnetic grains as the prior art single layer hard bias element.
摘要翻译： 具有改进的读头结构的磁头。 读头包括具有靠近其端部设置的硬偏置元件的自由磁性层，其中硬偏置元件包括改进的硬偏磁晶粒结构。 这是通过将硬偏压元件制造成具有第一硬偏压子层，非磁性中间层和第二硬偏压子层的双层结构来实现的。 中间层优选由诸如铬的非磁性材料构成，并且硬偏置子层由诸如CoPtCr的磁性材料构成。 每个子层由其自身的磁性颗粒形成，并且由于存在两个子层，所以用现有技术的单层硬偏置元件的大约两倍的磁性颗粒制造硬偏置元件。
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