公开(公告)号：US20160299601A1

公开(公告)日：2016-10-13

申请号：US15091295

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Masami JINTYOU ,  Yasuharu HOSAKA ,  Naoto GOTO ,  Takahiro IGUCHI ,  Daisuke KUROSAKI ,  Junichi KOEZUKA

IPC: G06F3/044 ,  H01L27/32 ,  H01L29/24 ,  H01L27/12 ,  H01L29/786

CPC classification number: G06F3/044 ,  G06F3/0412 ,  G06F2203/04103 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/323 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

Abstract translation: 提供了包括具有导电性的氧化物半导体膜的触摸面板。 触摸面板包括晶体管，第二绝缘膜和触摸传感器。 晶体管包括栅电极; 栅极绝缘膜; 第一氧化物半导体膜; 源电极和漏电极; 第一绝缘膜; 和第二氧化物半导体膜。 第二绝缘膜在第二氧化物半导体膜上方，使得第二氧化物半导体膜位于第一绝缘膜和第二绝缘膜之间。 触摸传感器包括第一电极和第二电极。 第一和第二电极中的一个包括第二氧化物半导体膜。

公开(公告)号：US20160260751A1

公开(公告)日：2016-09-08

申请号：US15058354

申请日：2016-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Yasuharu HOSAKA ,  Junichi KOEZUKA ,  Hiroyuki MIYAKE ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/1248 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a semiconductor device with high capacitance while the aperture ratio is increased or a semiconductor device whose manufacturing cost is low. The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film in contact with the gate electrode, a first oxide semiconductor film overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is over the first oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.

Abstract translation: 提供了开口率增加时具有高电容的半导体器件或制造成本低的半导体器件。 半导体器件包括晶体管，第一绝缘膜和在一对电极之间包括第二绝缘膜的电容器。 晶体管包括栅电极，与栅电极接触的栅极绝缘膜，与栅电极重叠的第一氧化物半导体膜，以及与第一氧化物半导体膜电连接的源电极和漏电极。 电容器的一对电极之一包括第二氧化物半导体膜。 第一绝缘膜在第一氧化物半导体膜上。 第二绝缘膜在第二氧化物半导体膜上方，使得第二氧化物半导体膜位于第一绝缘膜和第二绝缘膜之间。

公开(公告)号：US20150140713A1

公开(公告)日：2015-05-21

申请号：US14540348

申请日：2014-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo EGUCHI ,  Yohei MONMA ,  Atsuhiro TANI ,  Misako HIROSUE ,  Kenichi HASHIMOTO ,  Yasuharu HOSAKA

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

Abstract translation: 为了在从用于制造半导体元件的基板剥离包含半导体元件的元件形成层而被除去形成有元件形成层和剥离层的基板和薄膜之间的间隙中时，为了消除放电， 加压辊。 该膜附着在加压辊之间的元件形成层上，加压辊的一侧的加压辊的弯曲表面沿加压辊的弯曲表面弯曲并收集。 在元件形成层和剥离层之间产生剥离，并且元件形成层被转印到膜上。 通过喷嘴将液体顺序地供给到通过剥离产生的元件形成层和剥离层之间的间隙，使得在元件形成层和剥离层的表面上产生的电荷被液体扩散。

公开(公告)号：US20150053971A1

公开(公告)日：2015-02-26

申请号：US14456069

申请日：2014-08-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/24

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

Abstract translation: 在使用包括氧化物半导体的晶体管的半导体器件中，电特性的变化被抑制并提高了可靠性。 半导体器件包括绝缘表面上的栅电极; 与所述栅电极重叠的氧化物半导体膜; 栅极绝缘膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜接触; 与氧化物半导体膜的与栅极绝缘膜接触的表面的相反侧的表面接触的保护膜; 以及与氧化物半导体膜接触的一对电极。 通过电子自旋共振光谱测定的栅极绝缘膜或保护膜的自旋密度低于1×1018自旋/ cm3，优选为1×1017以上/ cm3以上，低于1×1018自旋/ cm3。

公开(公告)号：US20140022479A1

公开(公告)日：2014-01-23

申请号：US13939323

申请日：2013-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/1337 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

Abstract translation: 显示装置包括：第一基板，设置有位于像素区域外部并与其邻近的驱动器电路区域，并且包括至少一个第二晶体管，其向像素区域中的每个像素中的第一晶体管提供信号;第二晶体管， 面对第一衬底的衬底，第一衬底和第二衬底之间的液晶层，在第一晶体管和第二晶体管上的包括无机绝缘材料的第一层间绝缘膜，包括有机绝缘材料的第二层间绝缘膜， 第一层间绝缘膜和在第二层间绝缘膜上的包含无机绝缘材料的第三层间绝缘膜。 第三层间绝缘膜设置在像素区域的上部区域的一部分中，并且在驱动电路区域的内侧具有边缘部分。