公开(公告)号：US11424156B2

公开(公告)日：2022-08-23

申请号：US16969346

申请日：2019-01-14

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Rénald Guerin ,  Norbert Colombet

IPC: H01L21/762 ,  H01L21/20

Abstract: A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.

公开(公告)号：US20220172983A1

公开(公告)日：2022-06-02

申请号：US17436532

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762

Abstract: A method for transferring a useful layer from a donor substrate to a carrier substrate comprises: a) providing the donor substrate, the donor substrate including a buried weakened plane; b) providing the carrier substrate; c) joining the donor substrate to the carrier substrate to form a bonded structure; and d) annealing the bonded structure in order to increase the level of weakening of the buried weakened plane. A predetermined stress is applied to the buried weakened plane during the annealing for a period of time, the predetermined stress being selected so as to initiate the splitting wave once a given level of weakening has been reached. At the end of the period of time, the given level of weakening having been reached, the predetermined stress causes initiation and self-sustained propagation of the splitting wave along the buried weakened plane, resulting in the useful layer being transferred to the carrier substrate.

公开(公告)号：US20220059370A1

公开(公告)日：2022-02-24

申请号：US17438866

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/687

Abstract: A holding device for a fracturable assembly, which is intended to separate along a fracture plane defined between an upper part and a lower part of the fracturable assembly, comprises at least two protrusions configured to hold keep the fracturable assembly suspended in a substantially horizontal holding position, the protrusions being intended to be located between the upper part and the lower part, against a peripheral chamfer of the upper part; a support located below and at a distance from the, protrusions so as to gravitationally receive the lower part when the fracturable assembly is separated, and to keep it at a distance from the upper part held by the protrusions.

公开(公告)号：US20210121103A1

公开(公告)日：2021-04-29

申请号：US17141065

申请日：2021-01-04

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: A61B5/1459 ,  A61B5/00 ,  A61B5/145

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US20210057269A1

公开(公告)日：2021-02-25

申请号：US17090608

申请日：2020-11-05

Applicant: Soitec

Inventor： Arnaud Castex ,  Oleg Kononchuk

IPC: H01L21/762 ,  H01L21/02 ,  H01L27/12

Abstract: A semiconductor-on-insulator substrate for use in RF applications, such as a silicon-on-insulator substrate, comprises a semiconductor top layer, a buried oxide layer and a passivation layer over a support substrate. In addition, a penetration layer is provided between the passivation layer and the silicon support substrate to ensure sufficient high resistivity below RF features and avoid increased migration of dislocations in the support substrate. RF devices may be fabricated on and/or in such a semiconductor-on-insulator substrate.

公开(公告)号：US10910256B2

公开(公告)日：2021-02-02

申请号：US14422596

申请日：2013-09-06

Applicant: Soitec

Inventor： Fabrice Letertre ,  Oleg Kononchuk

IPC: H01L21/762 ,  B32B7/12 ,  B32B9/04 ,  B32B38/00 ,  C30B29/68 ,  C30B33/00 ,  H01L21/18 ,  H01L21/02 ,  C30B33/06 ,  H01L27/12 ,  H01L33/00

Abstract: The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.

公开(公告)号：US20210028036A1

公开(公告)日：2021-01-28

申请号：US17042755

申请日：2019-03-22

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Énergies Alternatives

Inventor： François Rieutord ,  Frédéric Mazen ,  Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/66 ,  G01N29/14 ,  G01N29/46

Abstract: A method for monitoring a heat treatment applied to a substrate comprising a weakened zone formed by implanting atomic species for splitting the substrate along the weakened zone, the substrate being arranged in a heating chamber, the method comprising recording sound in the interior or in the vicinity of the heating chamber and detecting, in the recording, a sound emitted by the substrate during the splitting thereof along the weakened zone. A device for the heat treatment of a batch of substrates comprises an annealing furnace comprising a heating chamber intended to receive the batch, at least one microphone configured to record sounds in the interior or in the vicinity of the heating chamber, and a processing system configured to detect, in an audio recording produced by the microphone, a sound emitted when a substrate splits.

公开(公告)号：US20190115248A1

公开(公告)日：2019-04-18

申请号：US16090349

申请日：2017-03-30

Applicant: Soitec

Inventor： Arnaud Castex ,  Oleg Kononchuk

IPC: H01L21/762 ,  H01L27/12 ,  H01L21/02

Abstract: A semiconductor-on-insulator substrate for use in RF applications, such as a silicon-on-insulator substrate, comprises a semiconductor top layer, a buried oxide layer and a passivation layer over a support substrate. In addition, a penetration layer is provided between the passivation layer and the silicon support substrate to ensure sufficient high resistivity below RF features and avoid increased migration of dislocations in the support substrate. RF devices may be fabricated on and/or in such a semiconductor-on-insulator substrate.

公开(公告)号：US20190058031A1

公开(公告)日：2019-02-21

申请号：US16080279

申请日：2017-02-23

Applicant: Centre National de la Recherche Scientifque ,  Universite Claude Bernard Lyon 1 ,  Soitec

Inventor： Christophe Figuet ,  Oleg Kononchuk ,  Kassam Alassaad ,  Gabriel Ferro ,  Véronique Souliere ,  Christelle Veytizou ,  Taguhi Yeghoyan

IPC: H01L29/06 ,  H01L21/762 ,  H01L29/16 ,  H01L21/02

Abstract: A support for a semiconductor structure includes a charge-trapping layer on a base substrate. The charge-trapping layer consists of a polycrystalline main layer and, interposed in the main layer or between the main layer and the base substrate, at least one intermediate polycrystalline layer composed of a silicon and carbon alloy or carbon. The intermediate layer has a resistivity greater than 1000 ohm·cm.

公开(公告)号：US20180347966A1

公开(公告)日：2018-12-06

申请号：US15761664

申请日：2016-10-03

Applicant: Soitec

Inventor： Oleg Kononchuk

IPC: G01B11/06 ,  H01L21/66 ,  H01L29/16 ,  H01L29/06

CPC classification number: G01B11/30 ,  G01B11/0633 ,  H01L22/12

Abstract: A method for measuring thickness variations in a first layer of a semiconductor structure includes: —acquiring an image of at least one zone of the surface of the structure —processing the acquired image so as to determine a map of the thickness variations of the first layer, and comparing the intensity of each pixel of the image with a predetermined calibration curve, the calibration curve being determined for a given thickness of a second layer of the, structure, and —measuring the thickness of the second layer in the at least one zone, —if the measured thickness is different from the thickness of the second layer considered in the calibration curve, and using a correction curve to determine a corrected map of thickness variations of the first layer.