公开(公告)号：US20160104544A1

公开(公告)日：2016-04-14

申请号：US14854251

申请日：2015-09-15

Applicant: Samsung Electronics Co., LTD.

Inventor： Sebastian Schafer ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Robert Beach ,  Zheng Duan

IPC: G11C29/00 ,  G01R33/14 ,  G11C11/16 ,  G01K13/00

CPC classification number: G11C11/161 ,  G01K7/36 ,  G01R33/098 ,  G01R33/14 ,  G11C7/04 ,  G11C11/16 ,  G11C11/1695 ,  G11C29/50 ,  G11C2029/5002

Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.

Abstract translation: 使用自旋转移测量可以切换的磁结温度的方法。 磁结包括至少一个磁性层。 该方法包括测量磁层对于温度的至少一个磁特性的温度变化。 该方法还包括测量磁特性相对于磁结的电偏压的偏差变化。 进行这种测量，使得考虑到磁特性中的自旋转矩扭矩引起的变化。 基于温度变化和偏差变化确定磁结的温度与电偏差。

公开(公告)号：US20150357556A1

公开(公告)日：2015-12-10

申请号：US13865445

申请日：2013-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Roman Chepulskyy ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/24 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each of the at least one insertion layer includes at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr. The at least two magnetic layers are magnetically coupled.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 被钉扎层和自由层中的至少一个包括磁性子结构。 磁性子结构包括与至少一个插入层交错的至少两个磁性层。 所述至少一个插入层中的至少一个包含Bi，W，I，Zn，Nb，Ag，Cd，Hf，Os，Mo，Ca，Hg，Sc，Y，Sr，Mg，Ti，Ba，K ，Na，Rb，Pb和Zr。 至少两个磁性层磁耦合。

公开(公告)号：US20150097159A1

公开(公告)日：2015-04-09

申请号：US14478877

申请日：2014-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Matthew J. Carey ,  Mohamad Towfik Krounbi ,  Alexey Vasilyevitch Khvalkovskiy

IPC: G06N99/00 ,  H01L49/00

CPC classification number: G06N99/002 ,  G11C11/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: A quantum computing device magnetic memory is described. The quantum computing device magnetic memory is coupled with a quantum processor including at least one quantum device corresponding to at least one qubit. The quantum computing device magnetic memory includes magnetic storage cells coupled with the quantum device(s) and bit lines coupled to the magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic junction. The magnetic junction(s) include a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction(s) are configured to allow the free layer to be switched between stable magnetic states. The magnetic junction(s) are configured such that the free layer has a nonzero initial writing spin transfer torque in an absence of thermal fluctuations.

Abstract translation: 描述了量子计算设备磁存储器。 量子计算设备磁存储器与包括对应于至少一个量子位的至少一个量子器件的量子处理器耦合。 量子计算设备磁存储器包括与量子器件耦合的磁存储单元和耦合到磁存储单元的位线。 每个磁存储单元包括至少一个磁结。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为允许自由层在稳定的磁状态之间切换。 磁结被配置为使得自由层在没有热波动的情况下具有非零的初始写入自旋转移转矩。

公开(公告)号：US20140269032A1

公开(公告)日：2014-09-18

申请号：US13851274

申请日：2013-03-27

Applicant: Samsung Electronics Co., LTD.

Inventor： Adrian E. Ong ,  Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov

IPC: G11C11/16

CPC classification number: G11C11/1673 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18

Abstract: A magnetic memory includes memory array tiles (MATs), intermediate circuitry, global bit lines and global circuitry. Each MAT includes bit lines, word lines, and magnetic storage cells having magnetic junction(s), selection device(s) and at least part of a spin-orbit interaction (SO) active layer adjacent to the magnetic junction(s). The SO active layer exerts a SO torque on the magnetic junction(s) due to a preconditioning current passing through the SO active layer. The magnetic junction(s) are programmable using write current(s) driven through the magnetic junction(s) and the preconditioning current. The bit and word lines correspond to the magnetic storage cells. The intermediate circuitry controls read and write operations within the MATs. Each global bit line corresponds to a portion of the MATs. The global circuitry selects and drives portions of the global bit lines for read operations and write operations.

Abstract translation: 磁存储器包括存储器阵列瓦片（MATs），中间电路，全局位线和全局电路。 每个MAT包括具有磁结，选择装置的位线，字线和磁存储单元以及与磁结相邻的自旋轨道相互作用（SO）有源层的至少一部分。 SO活性层由于预处理电流通过SO活性层而在磁结上施加SO转矩。 磁结可以使用通过磁结驱动的写入电流和预调节电流进行编程。 位和字线对应于磁存储单元。 中间电路控制MAT内的读写操作。 每个全局位线对应于MAT的一部分。 全局电路选择并驱动部分全局位线进行读操作和写操作。

公开(公告)号：US20140175578A1

公开(公告)日：2014-06-26

申请号：US13839672

申请日：2013-03-15

Applicant: Samsung Electronics Co., LTD.

Inventor： Keith Chan ,  Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov

IPC: H01L43/02

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08

Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括包括非磁性间隔层的多个磁性层。 磁结还包括至少一个无扩散转变层。 磁结被配置为当写入电流通过磁结时在多个稳定磁状态之间切换。