公开(公告)号：US20130069328A1

公开(公告)日：2013-03-21

申请号：US13420491

申请日：2012-03-14

申请人： Randal Hetrick ,  Tae Kim ,  Christine Marcelino ,  Stephanie Russo

发明人： Randal Hetrick ,  Tae Kim ,  Christine Marcelino ,  Stephanie Russo

IPC分类号： B60B33/00 ,  B62B3/00

CPC分类号： B60B33/0005 ,  A63B7/00 ,  A63B71/00 ,  A63B2071/025 ,  B62B3/00

摘要： A caster assembly for a frame is described that permits a frame to be easily moved and placed. The caster assembly, which may lift a leg of the frame, can be placed or removed without picking up the frame. The caster assembly further includes a handle that moves a cam for engaging the caster assembly with the leg. A frame having at least one caster assembly is also described.

摘要翻译： 描述了一种用于框架的脚轮组件，其允许框架容易地移动和放置。 脚轮组件可以提起框架的腿部，可以放置或移除，而不必拿起框架。 脚轮组件还包括手柄，该手柄使用于与脚轮接合的脚轮组件的凸轮移动。 还描述了具有至少一个脚轮组件的框架。

公开(公告)号：US20110032002A1

公开(公告)日：2011-02-10

申请号：US12906806

申请日：2010-10-18

申请人： Tae Kim ,  Howard C. Kirsch

发明人： Tae Kim ,  Howard C. Kirsch

IPC分类号： G01R19/00

CPC分类号： G11C7/08 ,  G11C7/062

摘要： Embodiments are described for a voltage compensated sense amplifier. One such sense amplifier includes a pair of digit line nodes respectively coupled to a pair of transistors. A first pair of switches are adapted to cross-couple the gates of the transistors to the respective digit line node and a second pair of switches are adapted to couple the gates of the transistors to a voltage supply. The first and second pair of switches are coupled to respective gates of the transistors independent of the pair of transistors being respectively coupled to the digit line nodes.

摘要翻译： 针对电压补偿的读出放大器描述实施例。 一个这样的感测放大器包括分别耦合到一对晶体管的一对数字线节点。 第一对开关适于将晶体管的栅极交叉耦合到相应的数字线节点，并且第二对开关适于将晶体管的栅极耦合到电压源。 第一和第二对开关耦合到晶体管的相应栅极，独立于一对晶体管分别耦合到数字线节点。

公开(公告)号：US20100019804A1

公开(公告)日：2010-01-28

申请号：US12573750

申请日：2009-10-05

申请人： Chulmin Jung ,  Tae Kim

发明人： Chulmin Jung ,  Tae Kim

IPC分类号： H03F3/45

CPC分类号： G11C7/065 ,  G11C11/4091

摘要： A sense amplifier having an amplifier stage with decreased gain is described. The sense amplifier includes a first input/output (“I/O”) node and a second complementary I/O node. The sense amplifier includes two amplifier stages, each for amplifying a signal on one of the I/O nodes. The first amplifier stage, having a first conductivity-type, amplifies one of the I/O node towards a first voltage. The second amplifier stage, having a second conductivity-type, amplifies the other I/O node towards a second voltage. The sense amplifier also includes a resistance circuit coupled to the second amplifier stage to reduce the gain of the second amplifier stage thereby reducing the rate of amplification of the signal on the corresponding I/O node.

摘要翻译： 描述了具有减小的增益的放大器级的读出放大器。 读出放大器包括第一输入/输出（“I / O”）节点和第二互补I / O节点。 读出放大器包括两个放大器级，每个用于放大I / O节点之一上的信号。 具有第一导电类型的第一放大器级将第一电压的I / O节点之一放大。 具有第二导电类型的第二放大器级将第二电压放大到另一个I / O节点。 读出放大器还包括耦合到第二放大器级的电阻电路，以减小第二放大器级的增益，从而降低相应I / O节点上的信号的放大率。

公开(公告)号：US20090168551A1

公开(公告)日：2009-07-02

申请号：US12399757

申请日：2009-03-06

申请人： Tae Kim ,  Charles L. Ingalls ,  David Pinney ,  Howard Kirsch

发明人： Tae Kim ,  Charles L. Ingalls ,  David Pinney ,  Howard Kirsch

IPC分类号： G11C7/00 ,  G11C7/06 ,  G11C5/14

CPC分类号： G11C7/08 ,  G11C7/065 ,  G11C7/12 ,  G11C11/4091 ,  G11C11/4094 ,  G11C2207/005 ,  G11C2207/2227

摘要： Systems and methods of sensing a data state coupled to a digit line and for coupling a digit line to a sense amplifier. In sensing the data state coupled to the digit line, the digit line is coupled to a sense node and driving voltages provided to the sense amplifier. The data state is latched in response to the driving voltages. In coupling the digit line to a sense amplifier, the digit line is coupled to the sense amplifier for a first time period and decoupled from the sense amplifier for a second time period. The digit line is coupled to the sense amplifier at a controlled rate following the second time period.

摘要翻译： 感测耦合到数字线并且将数字线耦合到读出放大器的数据状态的系统和方法。 在感测耦合到数字线的数据状态时，数字线耦合到感测节点并且提供给读出放大器的驱动电压。 响应于驱动电压而锁存数据状态。 在将数字线耦合到读出放大器时，数字线在第一时间段耦合到读出放大器，并在第二时间段内从读出放大器去耦。 数字线以跟随第二时间段的受控速率耦合到读出放大器。

公开(公告)号：US07535282B2

公开(公告)日：2009-05-19

申请号：US11146852

申请日：2005-06-07

申请人： Tae Kim ,  Howard Kirsch ,  Charles Ingalls ,  David Pinney

发明人： Tae Kim ,  Howard Kirsch ,  Charles Ingalls ,  David Pinney

IPC分类号： H03K19/017 ,  G05F1/575 ,  H01L27/04

CPC分类号： G05F3/205 ,  H03K17/302

摘要： The p- well back bias for NCH transistors in a DRAM sense amplifier circuit is dynamically adjusted. Preferably, during sensing, the p- well back bias for the NCH transistors of the sense amp is increased to in effect lower the threshold voltages for the NCH transistors so that they are more easily activated during sensing. The back bias voltage is preferably increased from ground (its normal value) to the threshold voltage of a NCH transistor (NVt), a value low enough to prevent the circuit from latch-up. Moreover, this voltage is preferably arrived at using a Vt detector/bias circuitry which receives the p- well bias voltage as feedback. While benefiting the disclosed sense amp circuit, the dynamic bias provided to the p- well of the NCH transistors can also benefit NCH transistors in other CMOS circuitry as well. Moreover, similar modifications to dynamically bias the n- wells of PCH transistors in CMOS circuits are also provided to increase the sensing margins of PCH transistors as well.

摘要翻译： 动态地调整DRAM读出放大器电路中的NCH晶体管的p阱背偏置。 优选地，在感测期间，感测放大器的NCH晶体管的p阱反向偏置被增加以实际上降低NCH晶体管的阈值电压，使得它们在感测期间更容易被激活。 背偏置电压优选地从地（其正常值）增加到NCH晶体管（NVt）的阈值电压，其值足够低以防止电路闭锁。 此外，该电压优选地使用接收p阱偏置电压作为反馈的Vt检测器/偏置电路来实现。 在使公开的感测放大器电路受益的同时，提供给NCH晶体管的p阱的动态偏置也可以有益于其它CMOS电路中的NCH晶体管。 此外，还提供了对CMOS电路中的PCH晶体管的n阱动态偏置的类似修改，以增加PCH晶体管的感测裕度。

公开(公告)号：US07505341B2

公开(公告)日：2009-03-17

申请号：US11436863

申请日：2006-05-17

申请人： Tae Kim ,  Charles L. Ingalls ,  David Pinney ,  Howard Kirsch

发明人： Tae Kim ,  Charles L. Ingalls ,  David Pinney ,  Howard Kirsch

IPC分类号： G11C7/00

CPC分类号： G11C7/08 ,  G11C7/065 ,  G11C7/12 ,  G11C11/4091 ,  G11C11/4094 ,  G11C2207/005 ,  G11C2207/2227

摘要： Systems and methods of sensing a data state coupled to a digit line and for coupling a digit line to a sense amplifier. In sensing the data state coupled to the digit line, the digit line is coupled to a sense node and driving voltages provided to the sense amplifier. The data state is latched in response to the driving voltages. In coupling the digit line to a sense amplifier, the digit line is coupled to the sense amplifier for a first time period and decoupled from the sense amplifier for a second time period. The digit line is coupled to the sense amplifier at a controlled rate following the second time period.

公开(公告)号：US07372746B2

公开(公告)日：2008-05-13

申请号：US11205659

申请日：2005-08-17

申请人： Tae Kim

发明人： Tae Kim

IPC分类号： G11C7/10

CPC分类号： G11C7/08 ,  G11C5/148 ,  G11C7/06 ,  G11C7/062 ,  G11C7/065 ,  G11C7/1006 ,  G11C7/12 ,  G11C7/22 ,  G11C11/4091 ,  G11C2207/065 ,  G11C2207/2227

摘要： A low voltage sensing scheme reduces active power down standby leakage current in a memory device. During memory's active power down state, the leak current may increase because of the use of P and Nsense amplifiers having low threshold voltages (Vth) for low Vcc sensing of data signals. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes.

摘要翻译： 低电压感测方案减少了存储器件中的有功功率下的待机漏电流。 在存储器的有功断电状态期间，由于使用具有低阈值电压（Vth）的P和Nsense放大器用于数据信号的低Vcc感测，漏电流可能增加。 在Psense放大器控制线（例如ACT）和Vcc之间和/或在Nsense放大器控制线（例如RNL *）和Vss（地电位）之间使用钳位装置或二极管。 钳位二极管在正常存储器操作期间不使能，但在有功掉电模式下导通，以减少通过ACT和/或RNL *节点的泄漏电流。 连接到ACT节点的钳位装置可以在掉电模式下降低ACT线路上的电压，而连接到RNL *节点的钳位装置可能会在掉电模式下增加RNL *线路上的电压，以降低读出放大器的漏电流 通过这些节点。

公开(公告)号：US20080095211A1

公开(公告)日：2008-04-24

申请号：US11577212

申请日：2005-12-14

申请人： Jong Jun You ,  Young Kim ,  Tae Kim

发明人： Jong Jun You ,  Young Kim ,  Tae Kim

IPC分类号： G01N25/00

CPC分类号： G01R31/2865 ,  G01R31/2868 ,  G01R31/2877 ,  G01R31/2887

摘要： Provided is a apparatus for testing reliability of a semiconductor sample including: a sample mounting part for mounting the semiconductor sample on an upper center part thereof, and mounting components having an evaluation circuit board at an upper peripheral part thereof; a heating block formed to have a tip shape and mounted on a lower part of the semiconductor sample to maintain a test temperature; a cooling block separated from the heating block and surrounding the heating block to cool the temperature of the components; and a fixing block for raising and lowering the semiconductor sample.

摘要翻译： 提供了一种用于测试半导体样品的可靠性的装置，包括：用于将半导体样品安装在其上部中心的样品安装部分和在其上部周边具有评估电路板的安装部件; 加热块形成为具有尖端形状并且安装在半导体样品的下部以保持测试温度; 冷却块与加热块分离并围绕加热块以冷却部件的温度; 以及用于升高和降低半导体样品的固定块。

公开(公告)号：US20080076371A1

公开(公告)日：2008-03-27

申请号：US11881816

申请日：2007-07-26

申请人： Alexander Dribinsky ,  Tae Kim ,  Dylan Kelly ,  Christopher Brindle

发明人： Alexander Dribinsky ,  Tae Kim ,  Dylan Kelly ,  Christopher Brindle

IPC分类号： H04B1/16

CPC分类号： H03K17/161 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08 ,  H03K17/102 ,  H03K17/284 ,  H03K17/6874 ,  H03K17/689 ,  H03K2217/0009

摘要： A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

摘要翻译： 公开了一种用于控制电路中的电荷注入的电路和方法。 在一个实施例中，电路和方法用于绝缘体上半导体（SOI）射频（RF）开关中。 在一个实施例中，SOI RF开关包括串联耦合的多个开关晶体管，被称为“堆叠”晶体管，并且在SOI衬底上被实现为单片集成电路。 电荷注入控制元件被耦合以从位于开关晶体管之间的电阻隔离节点接收注入的电荷，并且将注入的电荷传送到不被电阻隔离的至少一个节点。 在一个实施例中，电荷注入控制元件包括电阻器。 在另一个实施例中，电荷注入控制元件包括晶体管。 公开了一种用于控制开关电路中的电荷注入的方法，其中注入的电荷在串联耦合的开关晶体管之间的电阻隔离节点处产生，并且注入的电荷被传送到不被电阻隔离的开关电路的至少一个节点。

公开(公告)号：US20080064065A1

公开(公告)日：2008-03-13

申请号：US11781243

申请日：2007-07-21

申请人： Jung Kim ,  Jung Kim ,  Tae Kim ,  Jong Lee ,  Jong Yook

发明人： Jung Kim ,  Jung Kim ,  Tae Kim ,  Jong Lee ,  Jong Yook

IPC分类号： C12N1/20 ,  C12N15/00 ,  C12P21/06

CPC分类号： C07K14/51 ,  C07K2319/10 ,  C07K2319/21 ,  C12N15/62

摘要： Non-activated tissue-regeneration polypeptides (TRPs) and their preparation methods are disclosed. The TRPs include: a protein transduction domain (PTD) making the polypeptides to permeate a cell membrane without cell membrane receptors; a furin activation domain (FAD) which has at least one proprotein convertase cleavage site and which can be cleaved by the proprotein convertase and activate a tissue regeneration domain (TRD) in cells; and a tissue regeneration domain (TRD) which can be activated by the proprotein convertase cleavage of the FAD to stimulate the growth or formation of tissues or to induce the regeneration of tissues. The TRPs can be mass-produced by cultured bacteria, such as recombinant E. coli, are in a non-activated state before in vivo administration, and their separation, purification, handling, storage and administration are simple and convenient. The in vivo administration of the TRPs is useful to stimulate the formation or regeneration of tissues, such as bones or cartilages, or to improve the fibrosis and cirrhosis of organs, such as kidneys, liver, lungs and heart by pharmacological mechanisms completely different from those of prior rhBMPs or TGF-β proteins.

摘要翻译： 公开了非活化组织再生多肽（TRP）及其制备方法。 TRP包括：蛋白转导结构域（PTD），其使多肽渗透到没有细胞膜受体的细胞膜上; 具有至少一个蛋白质转换酶切割位点的弗林蛋白酶激活结构域（FAD），其可被前蛋白转化酶切割并激活细胞中的组织再生结构域（TRD）; 和组织再生结构域（TRD），其可以通过FAD的蛋白质转化酶切割来激活以刺激组织的生长或形成或诱导组织的再生。 TRP可以通过培养的细菌如重组大肠杆菌大量生产，在体内给药之前处于非活化状态，其分离，纯化，处理，储存和给药简单方便。 TRP的体内施用可用于刺激组织如骨骼或软骨的形成或再生，或通过与这些完全不同的药理学机制来改善器官（例如肾，肝，肺和心脏）的纤维化和肝硬化。 的先前的rhBMP或TGF-β蛋白。