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114 条记录 (耗时 0.043 秒)

    Semiconductor thin film and process for producing the same
    98.
    发明授权
    Semiconductor thin film and process for producing the same 有权
    半导体薄膜及其制造方法

    公开(公告)号：US08062777B2

    公开(公告)日：2011-11-22

    申请号：US12090731

    申请日：2006-08-07

    申请人： Kazuyoshi Inoue ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka, legal representative

    发明人： Kazuyoshi Inoue ,  Koki Yano ,  Nobuo Tanaka

    IPC分类号： B32B19/00

    CPC分类号： C30B29/06 ,  C01G15/00 ,  C01G15/006 ,  C01P2006/40 ,  C04B35/01 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3286 ,  C04B2235/6567 ,  C23C14/086 ,  C23C14/3414 ,  C30B29/16 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667

    摘要： This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10+1 to 10+8 Ωcm is used. This semiconductor thin film has no significant change in specific resistance and has high mobility. Accordingly, an element having improved switching properties can be provided by constructing a switching element using this semiconductor thin film.

    摘要翻译： 本发明提供了一种透明氧化物半导体，其包括以氧化铟为主要成分的氧化物和氧化铈作为添加剂，并且具有不发生光衍生的故障的特性，因此薄膜的电阻率没有变化 通过加热等，迁移率高，以及其制造方法。 使用特征在于包含氧化铟和氧化铈并且是结晶并具有10 + 1至10 + 8＆OHgr cm的电阻率的半导体薄膜。 该半导体薄膜的电阻率没有显着变化，迁移率高。 因此，可以通过构造使用该半导体薄膜的开关元件来提供具有改善的开关特性的元件。

    SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND A METHOD FOR PRODUCING THE SAME
    99.
    发明申请
    SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND A METHOD FOR PRODUCING THE SAME 有权
    半导体器件，薄膜晶体管及其制造方法

    公开(公告)号：US20110260157A1

    公开(公告)日：2011-10-27

    申请号：US12599241

    申请日：2008-05-01

    申请人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

    发明人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

    IPC分类号： H01L29/786 ,  H01L21/36 ,  H01L29/26

    CPC分类号： H01L21/02554 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/872

    摘要： A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistor 2 provided with a semiconductor which is composed of a prescribed material and serves as an active layer 41 and a conductor which is composed of a material having the same composition as that of the prescribed material and serves as at least one of a source electrode 51, a drain electrode 53 and a pixel electrode 55, which includes the steps of simultaneously forming into a film an object to be processed and a conductor (a source electrode 51, a source wire 52, a drain electrode 53, a drain wire 54 and a pixel electrode 55) which are composed of the amorphous prescribed material, followed by simultaneous shaping, and crystallizing the object to be processed which has been shaped to allow it to be the active layer 41.

    摘要翻译： 提出了一种半导体器件，薄膜晶体管及其制造方法，其能够降低管理成本，并且能够降低生产步骤以降低生产成本。 一种制造薄膜晶体管2的方法，该薄膜晶体管2设置有由规定材料构成并用作有源层41的半导体以及由具有与规定材料相同成分的材料构成的导体， 源极电极51，漏极电极53和像素电极55中的至少一个，其包括同时形成待处理物体的膜和导体（源电极51，源极线52，漏电极 53，漏极线54和像素电极55），其由非晶态规定材料构成，然后同时成形，并且使已被成形为使其成为有源层41的被处理物体结晶化。