公开(公告)号：US06975296B1

公开(公告)日：2005-12-13

申请号：US09540896

申请日：2000-03-31

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki

IPC分类号： G02F1/1362 ,  G09G3/20 ,  G09G3/36 ,  G09G5/395

CPC分类号： G02F1/136227 ,  G09G3/2018 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3685 ,  G09G3/3688 ,  G09G5/395 ,  G09G2300/0823 ,  G09G2310/027 ,  G09G2330/04

摘要： The method of fine gradation display by an electro-optical device with little influence by difference in elemental devices, is disclosed, which is an object of the present invention. In case of an active matrix electro-optical device, a visual gradation display can be carried out by digitizing an analog image signal externally supplied by means of binary notation, by temporarily storing the digital signal thus obtained, by outputting the digital signal to a circuit of next step in a proper order, and by controlling the output timing of the signal so as to output the signal to the active matrix electro-optical device, and whereby digitally controlling the time for applying voltage to a picture element.

摘要翻译： 本发明的一个目的是公开了一种电子装置的微细灰度显示方法，该装置几乎不受元件的差异影响。 在有源矩阵电光装置的情况下，通过将由此获得的数字信号临时存储，通过将数字信号输出到电路，可以通过数字化由二进制符号外部提供的模拟图像信号来执行视觉灰度显示 并且通过控制信号的输出定时，将信号输出到有源矩阵电光装置，并且数字地控制向像素施加电压的时间。

公开(公告)号：US20050052391A1

公开(公告)日：2005-03-10

申请号：US10941009

申请日：2004-09-15

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki

IPC分类号： G02F1/1362 ,  G09G3/20 ,  G09G3/36 ,  G09G5/395

CPC分类号： G02F1/136227 ,  G09G3/2018 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3685 ,  G09G3/3688 ,  G09G5/395 ,  G09G2300/0823 ,  G09G2310/027 ,  G09G2330/04

摘要： The method of fine gradation display by an electro-optical device with little influence by difference in elemental devices, is disclosed, which is an object of the present invention. In case of an active matrix electro-optical device, a visual gradation display can be carried out by digitizing an analog image signal externally supplied by means of binary notation, by temporarily storing the digital signal thus obtained, by outputting the digital signal to a circuit of next step in a proper order, and by controlling the output timing of the signal so as to output the signal to the active matrix electro-optical device, and whereby digitally controlling the time for applying voltage to a picture element.

公开(公告)号：US06777711B2

公开(公告)日：2004-08-17

申请号：US10390014

申请日：2003-03-18

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

IPC分类号： H01L310392

摘要： An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

公开(公告)号：US06566711B1

公开(公告)日：2003-05-20

申请号：US09344373

申请日：1999-06-25

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

IPC分类号： H01L2712

CPC分类号： H01L27/1222 ,  G02F1/1368 ,  G02F2001/136245 ,  G09G2300/0823 ,  H01L27/1214 ,  H01L27/1248 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  H04N3/127

摘要： An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

摘要翻译： 一种适用于有源矩阵液晶显示器的绝缘栅场效应晶体管。 沟道长度或源极区域和漏极区域之间的距离大于沿着沟道的纵向方向取得的栅电极的长度。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

公开(公告)号：US06476447B1

公开(公告)日：2002-11-05

申请号：US09660385

申请日：2000-09-12

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

IPC分类号： H01L2701

CPC分类号： H01L27/124 ,  G02F2001/136245 ,  G09G2300/0823 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  Y10S148/161 ,  Y10S148/163

摘要： A transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, of the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric fields is applied to these offset regions from the gate electrode.

摘要翻译： 适于在有源矩阵液晶显示器中使用的晶体管使得源极区域和漏极区域之间的距离的沟道长度大于在沟道的纵向方向上获取的栅电极的长度 。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场施加到来自栅电极的这些偏移区域。

公开(公告)号：US6147375A

公开(公告)日：2000-11-14

申请号：US151269

申请日：1998-09-11

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L29/66757 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78618 ,  G02F2001/136245 ,  G09G2300/0823 ,  Y10S148/161 ,  Y10S148/163

摘要： A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. The thickness of the oxide is determined depending on the purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric fields are applied to these offset regions from the gate electrode.

摘要翻译： 形成在基板上的布线被氧化，并且氧化物用作用于形成晶体管的源极和漏极杂质区域或用作彼此绝缘布线的材料的掩模，或者用作电容器的电介质。 氧化物的厚度取决于氧化物的目的。 在适用于有源矩阵液晶显示器的晶体管中，沟道长度，源极区域和漏极区域之间的距离大于在沟道的纵向方向上取得的栅电极的长度 。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场施加到来自栅电极的这些偏移区域。

公开(公告)号：US5956105A

公开(公告)日：1999-09-21

申请号：US566897

申请日：1995-12-04

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura

IPC分类号： G02F1/1362 ,  G09G3/20 ,  G09G3/36 ,  G09G5/395 ,  G02F1/136

CPC分类号： G09G5/395 ,  G02F1/136227 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3685 ,  G09G3/3688 ,  G09G2300/0823 ,  G09G2310/027 ,  G09G2330/04 ,  G09G3/2018

摘要： An electro-optical device including a substrate having an insulating surface and at least one thin film transistor formed on the insulating surface, wherein the thin film transistor includes a semiconductor film. An interlayer insulating film including an inorganic material is provided over the thin film transistor. A leveling film including an organic resin is formed over the substrate and covers the thin film transistor. The leveling film is prevented from directly contacting the semiconductor film by the interlayer insulating film formed over the semiconductor film. A pixel electrode is formed on the leveling film and is directly connected to the semiconductor film of the thin film transistor through an opening provided in the leveling film, wherein an edge of the organic resin film at a periphery of the opening is round.

摘要翻译： 一种电光装置，包括具有绝缘表面的基板和形成在所述绝缘表面上的至少一个薄膜晶体管，其中所述薄膜晶体管包括半导体膜。 包含无机材料的层间绝缘膜设置在薄膜晶体管的上方。 包含有机树脂的流平膜形成在衬底上并覆盖薄膜晶体管。 防止流平膜通过半导体膜上形成的层间绝缘膜直接接触半导体膜。 在平整膜上形成像素电极，并通过设在调平膜上的开口直接与薄膜晶体管的半导体膜连接，其中有机树脂膜在开口周边的边缘是圆形的。

公开(公告)号：US5933205A

公开(公告)日：1999-08-03

申请号：US104980

申请日：1998-06-26

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki

IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/36 ,  H01L21/336 ,  H01L29/786

CPC分类号： G09G3/2011 ,  G02F1/136227 ,  G02F1/1368 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G02F2001/136245 ,  G09G2300/0823 ,  G09G2310/027 ,  G09G2310/066 ,  Y10S148/141

摘要： A novel structure of an active electro-optical device is disclosed. The device is provided with complementary thin film insulated gate field effect transistors (TFTs) therein which comprise a P-TFT and an N-TFT. P-TFT and N-TFT are connected to a common signal line by the gate electrodes thereof, while the source (or drain) electrodes thereof are connected to a common signal line as well as to one of the picture element electrodes.In case of driving the active electro-optical device, a gradation display can be carried out in a driving method having a display timing determined in relation to a time F for writing one screen and a time (t) for writing in one picture element, by applying a reference signal in a cycle of the time (t), to the signal line used for a certain picture element driving selection, and by applying the select signal to the other signal line at a certain timing within the time (t), and whereby setting the value of the voltage to be applied to a liquid crystal.

摘要翻译： 公开了一种有源电光装置的新颖结构。 该器件在其中设置有包括P-TFT和N-TFT的互补薄膜绝缘栅场效应晶体管（TFT）。 P-TFT和N-TFT通过其栅电极连接到公共信号线，而其源极（或漏极）电极连接到公共信号线以及一个像素电极。 在驱动有源电光装置的情况下，可以以具有用于写入一个画面的时间F和用于写入一个画面的时间（t））确定的显示定时的驱动方法来进行灰度显示， 通过将时间（t）的周期中的参考信号施加到用于某一像素驱动选择的信号线，并且通过在时间（t）内的某个定时向另一个信号线施加选择信号， 由此设定要施加到液晶的电压的值。

公开(公告)号：US5849611A

公开(公告)日：1998-12-15

申请号：US455156

申请日：1995-05-31

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/32

CPC分类号： H01L29/66757 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78618 ,  G02F2001/136245 ,  G09G2300/0823 ,  Y10S148/161 ,  Y10S148/163

摘要： A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. Thickness of the oxide is determined depending on purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

摘要翻译： 形成在基板上的布线被氧化，并且氧化物用作用于形成晶体管的源极和漏极杂质区域或用作彼此绝缘布线的材料的掩模，或者用作电容器的电介质。 氧化物的厚度根据氧化物的目的而确定。 在适于用于有源矩阵液晶显示器的晶体管中，沟道长度或源极区域和漏极区域之间的距离大于沿着栅极电极的纵向取向的栅电极的长度 渠道。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

公开(公告)号：US5568288A

公开(公告)日：1996-10-22

申请号：US153080

申请日：1993-11-16

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki

IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/36 ,  H01L21/336 ,  H01L29/786 ,  G02F1/1343 ,  C25D5/02 ,  H05K3/00

CPC分类号： G09G3/2011 ,  G02F1/136227 ,  G02F1/1368 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G02F2001/136245 ,  G09G2300/0823 ,  G09G2310/027 ,  G09G2310/066 ,  Y10S148/141

摘要： An electro-optic device featuring an semiconductor device formed by providing an insulator over a gate electrode, and anodic oxidizing only the sides of the gate electrode.

摘要翻译： 一种电光器件，其特征在于通过在栅电极上提供绝缘体而形成的半导体器件，并且仅阳极氧化栅电极的侧面。