公开(公告)号：US6013928A

公开(公告)日：2000-01-11

申请号：US479393

申请日：1995-06-07

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H04N3/12 ,  H01L27/01 ,  H01L31/0392 ,  H01L29/04

CPC分类号： H04N3/127 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  G02F1/1368 ,  G02F2001/136245 ,  G09G2300/0823

摘要： An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

摘要翻译： 一种适用于有源矩阵液晶显示器的绝缘栅场效应晶体管。 沟道长度或源极区域和漏极区域之间的距离大于沿着沟道的纵向方向取得的栅电极的长度。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

公开(公告)号：US06977392B2

公开(公告)日：2005-12-20

申请号：US10390014

申请日：2003-03-18

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H04N3/12 ,  H01L31/0392

CPC分类号： H01L27/1222 ,  G02F1/1368 ,  G02F2001/136245 ,  G09G2300/0823 ,  H01L27/1214 ,  H01L27/1248 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  H04N3/127

摘要： An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

摘要翻译： 一种适用于有源矩阵液晶显示器的绝缘栅场效应晶体管。 沟道长度或源极区域和漏极区域之间的距离大于沿着沟道的纵向方向取得的栅电极的长度。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

公开(公告)号：US5485019A

公开(公告)日：1996-01-16

申请号：US014455

申请日：1993-02-03

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L33/00 ,  H01L29/78

CPC分类号： H01L29/66757 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78618 ,  G02F2001/136245 ,  G09G2300/0823 ,  Y10S148/161 ,  Y10S148/163

摘要： A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. Thickness of the oxide is determined depending on purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

摘要翻译： 形成在基板上的布线被氧化，并且氧化物用作用于形成晶体管的源极和漏极杂质区域或用作彼此绝缘布线的材料的掩模，或者用作电容器的电介质。 氧化物的厚度根据氧化物的目的而确定。 在适于用于有源矩阵液晶显示器的晶体管中，沟道长度或源极区域和漏极区域之间的距离大于沿着栅极电极的纵向取向的栅电极的长度 渠道。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

公开(公告)号：US06777711B2

公开(公告)日：2004-08-17

申请号：US10390014

申请日：2003-03-18

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

IPC分类号： H01L310392

摘要： An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

公开(公告)号：US06566711B1

公开(公告)日：2003-05-20

申请号：US09344373

申请日：1999-06-25

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

IPC分类号： H01L2712

CPC分类号： H01L27/1222 ,  G02F1/1368 ,  G02F2001/136245 ,  G09G2300/0823 ,  H01L27/1214 ,  H01L27/1248 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  H04N3/127

摘要： An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

摘要翻译： 一种适用于有源矩阵液晶显示器的绝缘栅场效应晶体管。 沟道长度或源极区域和漏极区域之间的距离大于沿着沟道的纵向方向取得的栅电极的长度。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

公开(公告)号：US06476447B1

公开(公告)日：2002-11-05

申请号：US09660385

申请日：2000-09-12

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

IPC分类号： H01L2701

CPC分类号： H01L27/124 ,  G02F2001/136245 ,  G09G2300/0823 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  Y10S148/161 ,  Y10S148/163

摘要： A transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, of the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric fields is applied to these offset regions from the gate electrode.

摘要翻译： 适于在有源矩阵液晶显示器中使用的晶体管使得源极区域和漏极区域之间的距离的沟道长度大于在沟道的纵向方向上获取的栅电极的长度 。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场施加到来自栅电极的这些偏移区域。

公开(公告)号：US6147375A

公开(公告)日：2000-11-14

申请号：US151269

申请日：1998-09-11

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L29/66757 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78618 ,  G02F2001/136245 ,  G09G2300/0823 ,  Y10S148/161 ,  Y10S148/163

摘要： A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. The thickness of the oxide is determined depending on the purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric fields are applied to these offset regions from the gate electrode.

摘要翻译： 形成在基板上的布线被氧化，并且氧化物用作用于形成晶体管的源极和漏极杂质区域或用作彼此绝缘布线的材料的掩模，或者用作电容器的电介质。 氧化物的厚度取决于氧化物的目的。 在适用于有源矩阵液晶显示器的晶体管中，沟道长度，源极区域和漏极区域之间的距离大于在沟道的纵向方向上取得的栅电极的长度 。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场施加到来自栅电极的这些偏移区域。

公开(公告)号：US5849611A

公开(公告)日：1998-12-15

申请号：US455156

申请日：1995-05-31

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/32

CPC分类号： H01L29/66757 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78618 ,  G02F2001/136245 ,  G09G2300/0823 ,  Y10S148/161 ,  Y10S148/163

摘要： A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. Thickness of the oxide is determined depending on purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

摘要翻译： 形成在基板上的布线被氧化，并且氧化物用作用于形成晶体管的源极和漏极杂质区域或用作彼此绝缘布线的材料的掩模，或者用作电容器的电介质。 氧化物的厚度根据氧化物的目的而确定。 在适于用于有源矩阵液晶显示器的晶体管中，沟道长度或源极区域和漏极区域之间的距离大于沿着栅极电极的纵向取向的栅电极的长度 渠道。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

公开(公告)号：US5521107A

公开(公告)日：1996-05-28

申请号：US219819

申请日：1994-03-29

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

IPC分类号： G02F1/1362 ,  G09G3/36 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786 ,  H04N3/12 ,  H01L21/265

CPC分类号： H04N3/127 ,  G09G3/3659 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  G02F1/136227 ,  G09G2300/0823 ,  G09G2310/027 ,  G09G3/3651 ,  Y10S148/117 ,  Y10S148/163

摘要： An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

摘要翻译： 一种适用于有源矩阵液晶显示器的绝缘栅场效应晶体管。 沟道长度或源极区域和漏极区域之间的距离大于沿着沟道的纵向方向取得的栅电极的长度。 偏移区域形成在源极和漏极区域的侧面上的沟道区域中。 没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

公开(公告)号：US20060060860A1

公开(公告)日：2006-03-23

申请号：US11205311

申请日：2005-08-17

申请人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

发明人： Shunpei Yamazaki ,  Akira Mase ,  Masaaki Hiroki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Hideki Uochi ,  Hideki Nemoto

IPC分类号： H01L29/04

CPC分类号： H01L27/1222 ,  G02F1/1368 ,  G02F2001/136245 ,  G09G2300/0823 ,  H01L27/1214 ,  H01L27/1248 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  H04N3/127

摘要： An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.