公开(公告)号：US20080000497A1

公开(公告)日：2008-01-03

申请号：US11479349

申请日：2006-06-30

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: B08B6/00 ,  C23F1/00

CPC classification number: H01L21/67069 ,  G03F7/427 ,  H01J2237/3342

Abstract: A method of removing organic-containing layers, such as photoresists, high temperature organic layers, or organic dielectric materials, from large surface area substrates by plasma treatment at or near atmospheric pressure, wherein said large surface area substrate is transported on a conveyor belt system during said plasma treatment. The plasma is typically principally comprised of a chemically non-reactive species, such as helium. The method can be integrated in-line with the wet strip and/or wet clean, or it can be used in a stand alone system. The apparatus for carrying out the method is also described.

Abstract translation: 一种通过在大气压下或接近大气压下等离子体处理从大表面积基板去除含有有机层的光致抗蚀剂，高温有机层或有机介电材料的方法，其中所述大表面积基板在输送带系统 在所述等离子体处理期间。 等离子体通常主要由化学非反应性物质如氦组成。 该方法可以与湿条和/或湿式清洁成一体，或者可以在独立系统中使用。 还描述了用于执行该方法的装置。

公开(公告)号：US07314854B2

公开(公告)日：2008-01-01

申请号：US11725126

申请日：2007-03-15

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: C11D7/32

CPC classification number: H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D3/33 ,  C11D11/0047 ,  C11D11/007

Abstract: Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH4OH), water (H2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H2O2) because hydrogen peroxide etches germanium. In another embodiment, a method of terminating oxidized surfaces on semiconductor substrates with terminating groups that promote the bonding of the oxidized surface to another surface with a surface treatment containing ammonium hydroxide (NH4OH) is described. The oxidized surface is immediately bonded to a second substrate after evaporation of the surface treatment.

Abstract translation: 本发明的实施方案描述了表面的氨氢氧化物处理。 在一个实施方案中，包括氢氧化铵（NH 4 OH），水（H 2 O 2 O），螯合剂和用于清洁硅的表面活性剂的方法和清洗溶液 描述锗基底。 由于过氧化氢蚀刻锗，清洗溶液不包括过氧化氢（H 2 O 2 O 2）。 在另一个实施方案中，描述了通过含有氢氧化铵（NH 4 OH）的表面处理促进氧化表面与另一表面结合的端基的半导体衬底上的氧化表面的方法。 蒸发表面处理后，氧化表面立即与第二基板结合。

公开(公告)号：US07232759B2

公开(公告)日：2007-06-19

申请号：US10958126

申请日：2004-10-04

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/302

CPC classification number: H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D3/33 ,  C11D11/0047 ,  C11D11/007

Abstract: Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH4OH), water (H2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H2O2) because hydrogen peroxide etches germanium. In another embodiment, a method of terminating oxidized surfaces on semiconductor substrates with terminating groups that promote the bonding of the oxidized surface to another surface with a surface treatment containing ammonium hydroxide (NH4OH) is described. The oxidized surface is immediately bonded to a second substrate after evaporation of the surface treatment.

Abstract translation: 本发明的实施方案描述了表面的氨氢氧化物处理。 在一个实施方案中，包括氢氧化铵（NH 4 OH），水（H 2 O 2 O），螯合剂和用于清洁硅的表面活性剂的方法和清洗溶液 描述锗基底。 由于过氧化氢蚀刻锗，清洗溶液不包括过氧化氢（H 2 O 2 O 2）。 在另一个实施方案中，描述了通过含有氢氧化铵（NH 4 OH）的表面处理促进氧化表面与另一表面结合的端基的半导体衬底上的氧化表面的方法。 蒸发表面处理后，氧化表面立即与第二基板结合。

公开(公告)号：US20070095366A1

公开(公告)日：2007-05-03

申请号：US11588093

申请日：2006-10-25

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: B08B3/00 ,  C23G1/00 ,  C23D17/00

CPC classification number: C11D11/0047 ,  C11D3/3942 ,  C11D7/02 ,  C11D7/265 ,  C11D7/5022 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/31138 ,  H01L31/18

Abstract: Disclosed herein is a method of removing an organic material from an electronic device substrate surface. The method is particularly useful when the device substrate includes exposed metal. According to the present method, an electronic device substrate surface is exposed to a solution comprising ozone (O3) at a concentration ranging from about 45 ppm to about 600 ppm in a solvent consisting of pure propionic acid or propionic acid in combination with deionized water or a carbonate having from 2 to 4 carbons. The method is particularly useful in the manufacture of large surface areas covered with device structures, such as electronic TFT flat panel displays, solar cell arrays, and structures containing light-emitting diodes. The method is also useful for removing organic materials from the surface of solid state device-containing semiconductor substrates.

Abstract translation: 本文公开了一种从电子器件衬底表面去除有机材料的方法。 当器件衬底包括暴露的金属时，该方法特别有用。 根据本方法，电子器件衬底表面在由纯丙酸或由纯丙酸组成的溶剂中暴露于浓度范围为约45ppm至约600ppm的包含臭氧（O 3 3+）的溶液 丙酸与去离子水或具有2至4个碳原子的碳酸酯组合。 该方法在制造覆盖有诸如电子TFT平板显示器，太阳能电池阵列和包含发光二极管的结构的器件结构的大表面积方面特别有用。 该方法也可用于从含固态元件的半导体衬底的表面去除有机材料。

公开(公告)号：US20070037396A1

公开(公告)日：2007-02-15

申请号：US11582223

申请日：2006-10-16

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/302

CPC classification number: H01L21/02063 ,  G03F7/423 ,  G03F7/427 ,  H01L21/31133 ,  H01L21/76808

Abstract: A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solution; subjecting the sacrificial layer to a plasma hydrogen; and contacting the sacrificial material layer with an etchant solution.

Abstract translation: 一种制造半导体器件的方法。 该方法包括使其上形成有光致抗蚀剂层的衬底经受等离子体氢，所述衬底还在其上形成牺牲层; 使光致抗蚀剂层与光致抗蚀剂去除溶液接触; 使牺牲层经受等离子体氢; 并使牺牲材料层与蚀刻剂溶液接触。

公开(公告)号：US07163018B2

公开(公告)日：2007-01-16

申请号：US10736007

申请日：2003-12-15

Applicant: Steven Verhaverbeke ,  Christopher Laurent Beaudry

Inventor： Steven Verhaverbeke ,  Christopher Laurent Beaudry

IPC: B08B6/00 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC classification number: H01L21/02052 ,  B08B3/04 ,  B08B3/10 ,  H01L21/67051

Abstract: Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning process while the surface of the wafer is hydrophobic. Methods of preventing the formation of silica agglomerates in a liquid during a pH transition from an alkaline pH to a neutral pH are also presented, including minimizing the turbulence in the liquid solution and reducing the temperature of the liquid solution during the transition.

Abstract translation: 提出了防止晶片表面上的空气 - 液体界面以防止在晶片上形成颗粒缺陷的方法。 可以通过在清洁过程中始终通过用液体覆盖晶片的整个表面来防止空气 - 液体界面，同时晶片的表面是疏水性的。 还提出了在从碱性pH到中性pH的pH转变期间防止在液体中形成二氧化硅聚集体的方法，包括最小化液体溶液中的湍流并降低在转变期间液体溶液的温度。

公开(公告)号：US20060266393A1

公开(公告)日：2006-11-30

申请号：US11496935

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B3/12 ,  B08B3/00 ,  C23G1/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060266389A1

公开(公告)日：2006-11-30

申请号：US11496826

申请日：2006-07-31

Applicant: Randhir Thakur ,  Steven Verhaverbeke ,  J. Truman

Inventor： Randhir Thakur ,  Steven Verhaverbeke ,  J. Truman

IPC: B08B3/02

CPC classification number: H01L21/67051 ,  B08B3/024 ,  B08B3/12

Abstract: A single wafer cleaning apparatus that includes a rotatable bracket that can hold a wafer, a rinse fluid having a first surface tension, a second fluid having a second surface tension lower than the first surface tension, a first nozzle capable of applying the rinse fluid at a first location on the wafer positioned in the bracket, second nozzle capable of applying the second fluid at a second location on the wafer where the second location is inboard of the first location, and the first nozzle and the second nozzle are capable of moving across the wafer to translate the first location and the second location from the wafer center to the wafer outer edge.

公开(公告)号：US20060261038A1

公开(公告)日：2006-11-23

申请号：US11497182

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  Christopher Beaudry

Inventor： Steven Verhaverbeke ,  Christopher Beaudry

IPC: B44C1/22 ,  B08B1/02 ,  C23F1/00

CPC classification number: H01L21/02052 ,  B08B3/04 ,  B08B3/10 ,  H01L21/67051

Abstract: Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning process while the surface of the wafer is hydrophobic. Methods of preventing the formation of silica agglomerates in a liquid during a pH transition from an alkaline pH to a neutral pH are also presented, including minimizing the turbulence in the liquid solution and reducing the temperature of the liquid solution during the transition.

Abstract translation: 提出了防止晶片表面上的空气 - 液体界面以防止在晶片上形成颗粒缺陷的方法。 可以通过在清洁过程中始终通过用液体覆盖晶片的整个表面来防止空气 - 液体界面，同时晶片的表面是疏水性的。 还提出了在从碱性pH到中性pH的pH转变期间防止在液体中形成二氧化硅聚集体的方法，包括最小化液体溶液中的湍流并降低在转变期间液体溶液的温度。

公开(公告)号：US20060102198A1

公开(公告)日：2006-05-18

申请号：US11321117

申请日：2005-12-28

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: C23G1/00 ,  B08B7/00 ,  B08B3/00

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

Abstract: A method that includes rotating a wafer, heating the wafer, applying a first liquid through one or more nozzles to a center of a topside of the wafer that is cooler than the heated wafer, and translating the one or more nozzles to an outer diameter edge of the wafer.

Abstract translation: 一种方法，其包括旋转晶片，加热晶片，将第一液体通过一个或多个喷嘴施加到比加热的晶片更冷的晶片顶部的中心，以及将所述一个或多个喷嘴平移到外径边缘 的晶片。