Abstract:
In an image forming apparatus, a distance adjusting unit adjusts an inter-unit distance between a contact unit and an image carrier by moving the image carrier or the contact unit by applying an opposing force to the image carrier or the contact unit against a biasing force applied by a biasing unit based on thickness information of a recording sheet acquired by a thickness-information acquiring unit and data indicating a relationship between the thickness information and an inter-unit distance change amount stored in a data storage unit.
Abstract:
An image forming device is disclosed that is able to enlarge a gap of a nipping portion with a simple and inexpensive structure, and able to reduce impact when a front end of a recording sheet runs into or a back end of the recording sheet passes through the nipping portion. The image forming device includes an image carrying unit, an image forming unit, a transfer unit, a conveyance unit, a determination unit that determines whether a thickness of the recording sheet is greater than a threshold value, and a cam member that rotates to enlarge or reduce the gap of the nipping portion between the image carrying unit and the transfer unit according to rotational positions of the cam member. When the thickness of the recording sheet is greater than the threshold, the cam member rotates so that the gap of the nipping portion is enlarged.
Abstract:
A load torque variation upon entry or exit of a sheet into a nipping portion is reduced while a nipping force necessary for image formation is provided. An image transfer apparatus, an image fixing apparatus, or a registration apparatus comprises an opposite roller, a transfer roller, and a compression spring for pressing the opposite roller onto the transfer roller. A sheet of transfer material is transported into a nipping portion between the opposite roller and the transfer roller, where an image on the opposite roller is transferred to the transfer material. The apparatus includes a retaining unit configured to retain a certain distance between the first rotating body and the second rotating body as long as the thickness of the transfer material that passes through the nipping portion remains the same.
Abstract:
The present invention provides a technology capable of reducing an area occupied by a nonvolatile memory while improving the reliability of the nonvolatile memory. In a semiconductor device, the structure of a code flash memory cell is differentiated from that of a data flash memory cell. More specifically, in the code flash memory cell, a memory gate electrode is formed only over the side surface on one side of a control gate electrode to improve a reading speed. In the data flash memory cell, on the other hand, a memory gate electrode is formed over the side surfaces on both sides of a control gate electrode. By using a multivalued memory cell instead of a binary memory cell, the resulting data flash memory cell can have improved reliability while preventing deterioration of retention properties and reduce its area.
Abstract:
Pressing an electronic device (2) to be tested to contact terminals (132a and 132b) while bringing a heater (112) having equal or close temperature change characteristics to those of the electronic device to be tested by a test pattern, transmitting a test pattern to the electronic device to be tested in this state, and controlling a power consumption of a heater so that total power of a power consumption of the electronic device to be tested by the test pattern and a power consumption of the heater becomes a constant value.
Abstract:
The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
Abstract:
By limiting a current change rate of a power to be supplied to a peltier element by using a pulse width control means for controlling to increase/decrease a pulse width of a pulse signal so that a temperature change of the peltier element does not exceed a predetermined temperature gradient and a switching means for controlling to turn on/off a drive current to be supplied to the peltier element based on a pulse signal having a pulse width controlled by the pulse width control means, an abrupt change of a rate of expansion and a rate of shrinkage of respective parts of the peltier element are suppressed and a stress imposed to the peltier element can be reduced, consequently, a lifetime of the peltier element can be maintained long.
Abstract:
A cooking oven, wherein air in a cooking chamber is sucked into a blower on the outside of the cooking chamber and fed to an upper duct and a lateral duct, air current led into the upper duct is heated by an upper heater and re-circulated from an upper blowing port to the cooking chamber, a catalyst block heated by a catalyst heating heater is disposed in the upper duct to decompose lamp black and smell substances contained in the air current, catalyst paint is applied onto the inner wall surface of the upper duct to reinforce a performance for decomposing the lamp black and smell substances, both the lateral duct and the upper duct are formed in the same structure, the distributions of heating volumes of the upper heater and the lateral heater in the cross sections of the upper duct and the lateral duct are set so that larger heating volumes are generated on larger air volume sides according to the air volume distributions in the cross sections of the ducts, and the catalyst block is also disposed in the cross sections of the ducts eccentrically to the larger heater heating volume side.
Abstract:
This invention is to improve data retention properties of a nonvolatile memory cell having an ONO film. A first cavity is disposed, in a position between the nitride film serving as a charge storage film and a memory gate and below an end portion of the memory gate, adjacent to the upper oxide film. A second cavity is disposed, in a position between the nitride film and a substrate and below an end portion of the memory gate, adjacent to the bottom oxide film. These cavities are closed with sidewall spacers formed over the substrate along the sidewalls of the memory gate.
Abstract:
An image forming apparatus includes an image carrier that carries an image and rotates, a transfer member that rotates in contact with the image carrier and transfers an image formed on the image carrier to a recording medium, a conveying unit that conveys the recording medium to a contact position where the image carrier and the transfer member come into contact with each other, and a gap forming unit that forms a gap between the image carrier and the transfer member at the contact position. The gap forming unit forms the gap immediately before the recording medium enters the contact position.