摘要:
A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.
摘要:
A shift register includes a plurality of shift register stages for providing gate signals. Each shift register stage has a pull-up unit, a carry unit, a carry control unit, an input unit and a pull-down unit. The pull-up unit is employed to pull up a gate signal according to a driving control voltage and a first clock. The carry unit generates a preliminary start pulse signal based on the driving control voltage and the first clock. The carry control unit outputs the preliminary start pulse signal to become a forward or backward start pulse signal according to first and second bias voltages. The input unit is utilized for inputting a start pulse signal generated by a preceding or succeeding shift register stage to become the driving control voltage. The pull-down unit pulls down the gate signal, the preliminary start pulse signal and the driving control voltage according to multiple clocks.
摘要:
A computer system is remotely managed by a console. The computer system includes a central processing unit, a chipset, a network chip, an embedded controller and a basic input output system. The chipset communicates with the central processing unit. The network chip communicates with the chipset. The embedded controller communicates with the network chip and the chipset. The basic input output system communicates with the chipset. The embedded controller is connected to the Internet through the network chip to acquire a fixed IP address or a dynamic address, thereby exchanging data with the console through the Internet.
摘要:
A transflective liquid crystal display (LCD) includes a plurality of pixel regions. Each pixel region includes a transparent electrode receiving a gray voltage and a plurality of electrically floating reflectors. The transparent electrode includes a plurality of openings corresponding to the reflectors. The reflectors are disposed on the corresponding openings.
摘要:
Techniques and tools for encoding and decoding a block of frequency coefficients are presented. An encoder selects a scan order from multiple available scan orders and then applies the selected scan order to a two-dimensional matrix of transform coefficients, grouping non-zero values of the frequency coefficients together in a one-dimensional string. The encoder entropy encodes the one-dimensional string of coefficient values according to a multi-level nested set representation. In decoding, a decoder entropy decodes the one-dimensional string of coefficient values from the multi-level nested set representation. The decoder selects the scan order from among multiple available scan orders and then reorders the coefficients back into a two-dimensional matrix using the selected scan order.
摘要:
Techniques and tools for adaptive selection of picture quantization parameters (“QPs”) for predicted pictures are described. For example, a video encoder adaptively selects a delta QP for a B-picture based on spatial complexity, temporal complexity, whether differential quantization is active, whether the B-picture is available as a reference picture, or some combination or subset of these or other factors. The delta QP can then be used to adjust the picture QP for the B-picture (e.g., to reduce bit rate for the B-picture without appreciably reducing the perceived quality of a video sequence.
摘要:
A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.
摘要:
A method is provided for filling a trench or gap between a pair of semiconductor devices formed above a substrate. A liner is applied in a trench or gap between a pair of devices by atomic layer deposition to partially fill the trench or gap. The trench or gap is filled by a bulk fill process.
摘要:
A mobile phone with fat measuring function including a mobile phone control module, a display device, a fat measuring control circuit, a constant current electrode pair and a voltage measuring electrode pair is provided. Both the display device and the fat measuring control circuit are coupled to the mobile phone control module, while both constant current electrode pair and voltage measuring electrode pair are coupled to the fat measuring control circuit. When the user touches the constant current electrode pair and the voltage measuring electrode pair, the fat measuring control circuit firstly applies a predetermined current to the constant current electrode pair. The predetermined current causes the voltage measuring electrode pair to generate a measured voltage. The user's body fat percentage is then generated according to the measured voltage and the user's weight data, and the body fat percentage is displayed on the display device.
摘要:
A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.