利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

786 条记录 (耗时 0.044 秒)

    Method for forming dielectric film to improve adhesion of low-k film
    1.
    发明申请
    Method for forming dielectric film to improve adhesion of low-k film 有权
    用于形成介电膜以改善低k膜的粘附性的方法

    公开(公告)号：US20070249159A1

    公开(公告)日：2007-10-25

    申请号：US11409658

    申请日：2006-04-24

    申请人： Fang Tsai ,  I-I Chen ,  Zhen-Cheng Wu ,  Chih-Lung Lin ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    发明人： Fang Tsai ,  I-I Chen ,  Zhen-Cheng Wu ,  Chih-Lung Lin ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76832 ,  H01L21/76843

    摘要： A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.

    摘要翻译： 提供了具有改进的低k电介质层和下层之间的粘附性的半导体结构及其形成方法。 所述半导体衬底包括半导体衬底上的电介质层，所述电介质层上的粘合层，其中所述粘合层包含初始子层上的过渡子层，并且其中所述过渡子层具有逐渐从 下部到上部。 在粘合层上形成低k电介质层。 在低k电介质层中形成镶嵌开口。 过渡子层的顶部具有与低k电介质层的组成基本相似的组成。 过渡子层的底部具有与初始子层的组成基本相似的组成。

    Method for forming dielectric film to improve adhesion of low-k film
    2.
    发明授权
    Method for forming dielectric film to improve adhesion of low-k film 有权
    用于形成介电膜以改善低k膜的粘附性的方法

    公开(公告)号：US07465676B2

    公开(公告)日：2008-12-16

    申请号：US11409658

    申请日：2006-04-24

    申请人： Fang Wen Tsai ,  I-I Chen ,  Zhen-Cheng Wu ,  Chih-Lung Lin ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    发明人： Fang Wen Tsai ,  I-I Chen ,  Zhen-Cheng Wu ,  Chih-Lung Lin ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/76832 ,  H01L21/76843

    摘要： A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.

    摘要翻译： 提供了具有改善的低k电介质层和下层之间的粘附性的半导体结构及其形成方法。 所述半导体衬底包括半导体衬底上的电介质层，所述电介质层上的粘合层，其中所述粘合层包含初始子层上的过渡子层，并且其中所述过渡子层具有逐渐从 下部到上部。 在粘合层上形成低k电介质层。 在低k电介质层中形成镶嵌开口。 过渡子层的顶部具有与低k电介质层的组成基本相似的组成。 过渡子层的底部具有与初始子层的组成基本相似的组成。

    Peeling-free porous capping material
    3.
    发明申请
    Peeling-free porous capping material 审中-公开
    无剥离多孔封盖材料

    公开(公告)号：US20080188074A1

    公开(公告)日：2008-08-07

    申请号：US11728623

    申请日：2007-03-27

    申请人： I-I Chen ,  Fang Wen Tsai ,  Zhen-Cheng Wu ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    发明人： I-I Chen ,  Fang Wen Tsai ,  Zhen-Cheng Wu ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming a cap layer for an interconnect structure is provided. The method includes providing a substrate; depositing a low-k dielectric layer comprising a first porogen over the substrate; depositing a low-k cap layer comprising a second porogen on the low-k dielectric layer; and curing the low-k dielectric layer and the low-k cap layer simultaneously to remove the first and the second porogens, so that a first porosity in the low-k dielectric layer and a second porosity in the low-k cap layer are created. The second porosity is preferably less than the first porosity. Preferably, the low-k dielectric layer and the low-k cap layer comprise a common set of precursors and porogens, and are in-situ performed.

    摘要翻译： 提供一种用于形成互连结构的盖层的方法。 该方法包括提供基板; 在衬底上沉积包含第一致孔剂的低k电介质层; 在低k电介质层上沉积包含第二致孔剂的低k覆盖层; 并且同时固化低k电介质层和低k覆盖层以除去第一和第二致孔剂，从而产生低k电介质层中的第一孔隙和低k覆盖层中的第二孔隙率 。 第二孔隙率优选小于第一孔隙率。 优选地，低k电介质层和低k覆盖层包含一组共同的前体和致孔剂，并且原位进行。

    Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio
    5.
    发明授权
    Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio 有权
    包含双层多孔低k电介质的互连使用不同的致孔剂来构造前者的比例

    公开(公告)号：US07723226B2

    公开(公告)日：2010-05-25

    申请号：US11654427

    申请日：2007-01-17

    申请人： Chen-Hua Yu ,  Yung-Cheng Lu ,  Pei-Ren Jeng ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Chung-Chi Ko ,  Tien-I Bao ,  Shwang-Ming Jeng

    发明人： Chen-Hua Yu ,  Yung-Cheng Lu ,  Pei-Ren Jeng ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Chung-Chi Ko ,  Tien-I Bao ,  Shwang-Ming Jeng

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A bilayer porous low dielectric constant (low-k) interconnect structure and methods of fabricating the same are presented. A preferred embodiment having an effective dielectric constant of about 2.2 comprises a bottom deposited dielectric layer and a top deposited dielectric layer in direct contact with the former. The bottom layer and the top layer have same atomic compositions, but a higher dielectric constant value k. The bottom dielectric layer serves as an etch stop layer for the top dielectric layer, and the top dielectric layer can act as CMP stop layer. One embodiment of making the structure includes forming a bottom dielectric layer having a first porogen content and a top dielectric layer having a higher porogen content. A curing process leaves lower pore density in the bottom dielectric layer than that left in the top dielectric layer, which leads to higher dielectric value k in the bottom dielectric layer.

    摘要翻译： 提出了双层多孔低介电常数（低k）互连结构及其制造方法。 具有约2.2的有效介电常数的优选实施例包括与前者直接接触的底部沉积的介电层和顶部沉积的介电层。 底层和顶层具有相同的原子组成，但是较高的介电常数值k。 底部介电层用作顶部介电层的蚀刻停止层，并且顶部介电层可以用作CMP停止层。 制造该结构的一个实施方案包括形成具有第一致孔剂含量的底部电介质层和具有较高致孔剂含量的顶部电介质层。 固化过程在底部电介质层中留下的孔隙密度低于顶部介电层中留下的孔密度，这导致底部介电层中较高的介电常数k。

    Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio
    7.
    发明申请
    Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio 有权
    包含双层多孔低k电介质的互连使用不同的致孔剂来构造前者的比例

    公开(公告)号：US20080171431A1

    公开(公告)日：2008-07-17

    申请号：US11654427

    申请日：2007-01-17

    申请人： Chen-Hua Yu ,  Yung-Cheng Lu ,  Pei-Ren Jeng ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Chung-Chi Ko ,  Tien-I Bao ,  Shwang-Ming Jeng

    发明人： Chen-Hua Yu ,  Yung-Cheng Lu ,  Pei-Ren Jeng ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Chung-Chi Ko ,  Tien-I Bao ,  Shwang-Ming Jeng

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A bilayer porous low dielectric constant (low-k) interconnect structure and methods of fabricating the same are presented. A preferred embodiment having an effective dielectric constant of about 2.2 comprises a bottom deposited dielectric layer and a top deposited dielectric layer in direct contact with the former. The bottom layer and the top layer have same atomic compositions, but a higher dielectric constant value k. The bottom dielectric layer serves as an etch stop layer for the top dielectric layer, and the top dielectric layer can act as CMP stop layer. One embodiment of making the structure includes forming a bottom dielectric layer having a first porogen content and a top dielectric layer having a higher porogen content. A curing process leaves lower pore density in the bottom dielectric layer than that left in the top dielectric layer, which leads to higher dielectric value k in the bottom dielectric layer.

    摘要翻译： 提出了双层多孔低介电常数（低k）互连结构及其制造方法。 具有约2.2的有效介电常数的优选实施例包括与前者直接接触的底部沉积介电层和顶部沉积的介电层。 底层和顶层具有相同的原子组成，但是较高的介电常数值k。 底部介电层用作顶部电介质层的蚀刻停止层，并且顶部介电层可以用作CMP停止层。 制造该结构的一个实施方案包括形成具有第一致孔剂含量的底部电介质层和具有较高致孔剂含量的顶部电介质层。 固化过程在底部电介质层中留下比在顶部电介质层中留下的孔密度更低的孔密度，这导致底部电介质层中较高的介电值k。

    UV curing of low-k porous dielectrics
    8.
    发明申请
    UV curing of low-k porous dielectrics 有权
    低k多孔电介质的UV固化

    公开(公告)号：US20070161230A1

    公开(公告)日：2007-07-12

    申请号：US11328596

    申请日：2006-01-10

    申请人： I-I Chen ,  Tien-I Bao ,  Shwang-Ming Cheng ,  Chen-Hua Yu

    发明人： I-I Chen ,  Tien-I Bao ,  Shwang-Ming Cheng ,  Chen-Hua Yu

    IPC分类号： H01L21/4763 ,  H01L21/469

    CPC分类号： H01L21/76826 ,  H01L21/7682 ,  H01L21/76825 ,  H01L2221/1047

    摘要： A method of manufacturing a semiconductor device having a low-k dielectric layer is provided. An embodiment comprises forming a dielectric layer on a substrate, wherein the layer comprises a pore generating material dispersed in an uncured matrix. A second step comprises forming pores in the uncured matrix by irradiating the layer with radiation having a first wavelength. After pore forming, a third step comprises cross-linking the dielectric by irradiating it at a second wavelength, the second being less than the first. In an embodiment, the irradiating wavelengths comprise ultra-violet radiation. Embodiments may further include repairing processing damage wherein the damage includes dangling bonds or silanol formation. The repairing includes annealing in a carbon-containing ambient such as C2H4, C3H6, or hexamethyldisilazane (HMDS).

    摘要翻译： 提供一种制造具有低k电介质层的半导体器件的方法。 一个实施方案包括在基底上形成介电层，其中该层包含分散在未固化的基质中的孔产生材料。 第二步骤包括通过用具有第一波长的辐射照射该层来在未固化的基质中形成孔。 在成孔之后，第三步骤包括通过以第二波长照射电介质来交联电介质，第二步小于第一波长。 在一个实施例中，照射波长包括紫外辐射。 实施方案可以进一步包括修复处理损伤，其中损伤包括悬挂键或硅烷醇形成。 修复包括在含碳环境中退火，例如C 2 H 4 H 3，C 3 H 6， 或六甲基二硅氮烷（HMDS）。

    UV curing of low-k porous dielectrics
    9.
    发明授权
    UV curing of low-k porous dielectrics 有权
    低k多孔电介质的UV固化

    公开(公告)号：US07482265B2

    公开(公告)日：2009-01-27

    申请号：US11328596

    申请日：2006-01-10

    申请人： I-I Chen ,  Tien-I Bao ,  Shwang-Ming Cheug ,  Chen-Hua Yu

    发明人： I-I Chen ,  Tien-I Bao ,  Shwang-Ming Cheug ,  Chen-Hua Yu

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76826 ,  H01L21/7682 ,  H01L21/76825 ,  H01L2221/1047

    摘要： A method of manufacturing a semiconductor device having a low-k dielectric layer is provided. An embodiment comprises forming a dielectric layer on a substrate, wherein the layer comprises a pore generating material dispersed in an uncured matrix. A second step comprises forming pores in the uncured matrix by irradiating the layer with radiation having a first wavelength. After pore forming, a third step comprises cross-linking the dielectric by irradiating it at a second wavelength, the second being less than the first. In an embodiment, the irradiating wavelengths comprise ultra-violet radiation. Embodiments may further include repairing processing damage wherein the damage includes dangling bonds or silanol formation. The repairing includes annealing in a carbon-containing ambient such as C2H4, C3H6, or hexamethyldisilazane (HMDS).

    摘要翻译： 提供一种制造具有低k电介质层的半导体器件的方法。 一个实施方案包括在基底上形成介电层，其中该层包含分散在未固化的基质中的孔产生材料。 第二步骤包括通过用具有第一波长的辐射照射该层来在未固化的基质中形成孔。 在成孔之后，第三步骤包括通过以第二波长照射电介质来交换电介质，第二步小于第一波长。 在一个实施例中，照射波长包括紫外辐射。 实施方案可以进一步包括修复处理损伤，其中损伤包括悬挂键或硅烷醇形成。 修复包括在含碳环境如C2H4，C3H6或六甲基二硅氮烷（HMDS）中的退火。