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132 条记录 (耗时 0.034 秒)

    Semiconductor laser
    91.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5781577A

    公开(公告)日：1998-07-14

    申请号：US586155

    申请日：1996-01-17

    申请人： Yutaka Nagai ,  Akihiro Shima

    发明人： Yutaka Nagai ,  Akihiro Shima

    IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/34 ,  H01S3/18

    CPC分类号： H01S5/162 ,  H01S5/168 ,  H01S5/2063 ,  H01S5/3428

    摘要： A semiconductor laser includes a first conductivity type semiconductor substrate, a first conductivity type lower cladding layer, a quantum well structure active layer including alternately laminated barrier and well layers, a disordered region extending to laser resonator facets, a second conductivity type first upper cladding layer disposed on the quantum well structure active layer, a ridge structure disposed on the first cladding layer, and having a first region not proximate the laser resonator facets including a second conductivity type second upper cladding layer and a second conductivity type first contact layer and a second region, proximate a laser resonator facet having a first conductivity type first semiconductor layer of the same material and thickness as the second upper cladding layer and a first conductivity type second semiconductor layer of same material as the first contact layer, a first conductivity type current blocking layer having a band gap energy larger than that of the second upper cladding burying the ridge structure, and a second conductivity type second contact layer disposed on the current blocking layer and the ridge structure. The band gap energy at the laser resonator facets is larger than in other regions and serves as a window structure. A refractive index distribution in the transverse direction confines laser light in the transverse direction below the ridge structure and there is no astigmatism.

    摘要翻译： 半导体激光器包括第一导电型半导体衬底，第一导电型下包层，包括交替层叠的势垒层和阱层的量子阱结构有源层，延伸到激光谐振器面的无序区域，第二导电类型的第一上覆层 设置在量子阱结构有源层上，脊结构设置在第一覆层上，并且具有不邻近激光谐振器面的第一区域，该第一区域包括第二导电类型的第二上覆层和第二导电类型的第一接触层，第二导电类型的第二接触层 区域，邻近具有与第二上包层相同材料和厚度的第一导电类型的第一半导体层和与第一接触层相同材料的第一导电类型的第二半导体层的激光谐振器面，第一导电类型电流阻挡 带隙能量大于的层 第二上包层埋设脊结构的第二导电类型的第二接触层，以及设置在电流阻挡层和脊结构上的第二导电类型的第二接触层。 激光谐振器面处的带隙能量大于其他区域，并且用作窗口结构。 横向上的折射率分布将激光沿着脊结构的横向限制，并且没有像散。

    Semiconductor laser for pumping light amplifier
    92.
    发明授权
    Semiconductor laser for pumping light amplifier 失效
    用于泵浦光放大器的半导体激光器

    公开(公告)号：US5701322A

    公开(公告)日：1997-12-23

    申请号：US575121

    申请日：1995-12-19

    申请人： Yutaka Nagai

    发明人： Yutaka Nagai

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/209 ,  H01S5/2219 ,  H01S5/2226 ,  H01S5/32316

    摘要： A semiconductor laser includes a first conductivity type semiconductor substrate; a first conductivity type cladding layer disposed on the semiconductor substrate; an active layer disposed on the first conductivity type cladding layer for producing light having a wavelength .lambda.; a light waveguide structure including a second conductivity type cladding layer disposed on the active layer; a first conductivity type current blocking layer disposed on, contacting, and confining the light waveguide structure and containing an element absorbing light having the wavelength .lambda.; and a second conductivity type contacting layer contacting the light waveguide structure and the current blocking layer.

    摘要翻译： 半导体激光器包括第一导电型半导体衬底; 设置在半导体衬底上的第一导电型包层; 设置在第一导电型包覆层上用于产生具有波长λ的光的有源层; 包括设置在所述有源层上的第二导电型包覆层的光波导结构; 第一导电型电流阻挡层，设置在该光波导结构上，接触并限制光波导结构并且包含吸收具有波长λ的光的元件; 以及与光波导结构和电流阻挡层接触的第二导电类型接触层。

    Multilayered optical disk and its recording method
    97.
    发明授权
    Multilayered optical disk and its recording method 有权
    多层光盘及其记录方法

    公开(公告)号：US09286929B2

    公开(公告)日：2016-03-15

    申请号：US12570106

    申请日：2009-09-30

    申请人： Harukazu Miyamoto ,  Koichi Watanabe ,  Yutaka Nagai ,  Koichiro Nishimura ,  Takakiyo Yasukawa

    发明人： Harukazu Miyamoto ,  Koichi Watanabe ,  Yutaka Nagai ,  Koichiro Nishimura ,  Takakiyo Yasukawa

    IPC分类号： G11B7/007 ,  G11B7/1267 ,  G11B7/24038 ,  G11B7/00

    CPC分类号： G11B7/00736 ,  G11B7/1267 ,  G11B7/24038 ,  G11B2007/0013

    摘要： A method for performing recording on a multilayered optical disk which has three or more recordable or rewritable information recording layers with a first recording layer and a second recording layer located nearer to a light incident surface than the first recording layer, and which respectively has a first test area configured by a plurality of segments in the first recording layer and in the second recording layer, wherein a predetermined radial distance L is defined beforehand. When an arbitrary segment in the second test area is test-recorded, a segment in the first test area, the radial distance of which from the recorded test area in the second test area is within the range of the predetermined radial distance L, is set as a segment in which test recording is not performed.

    摘要翻译： 一种用于在具有三个或更多个可记录或可重写信息记录层的多层光盘上执行记录的方法，所述信息记录层具有位于比第一记录层更靠近光入射表面的第一记录层和第二记录层，并且分别具有第一 测试区域由第一记录层和第二记录层中的多个段构成，其中预先定义预定的径向距离L. 当对第二测试区域中的任意段进行测试记录时，将第一测试区域中与第二测试区域中记录的测试区域的径向距离设置在预定的径向距离L的范围内的段被设置 作为不执行测试记录的段。

    Ball screw device
    98.
    发明授权
    Ball screw device 失效
    滚珠丝杠装置

    公开(公告)号：US08752446B2

    公开(公告)日：2014-06-17

    申请号：US13058124

    申请日：2010-08-25

    申请人： Kazuhito Yamamoto ,  Junji Minakuchi ,  Yutaka Nagai ,  Masahiro Nobutomo

    发明人： Kazuhito Yamamoto ,  Junji Minakuchi ,  Yutaka Nagai ,  Masahiro Nobutomo

    IPC分类号： F16H1/20 ,  F16H1/24 ,  F16H55/02

    CPC分类号： F16H57/0497 ,  F16H25/2204 ,  F16H57/0412

    摘要： A ball screw apparatus is provided which is less likely to increase dynamic friction torque even when a nut is contracted by cooling, and in which cooling effect is made as high as possible and which does not invite excessive machining efficiency droop and increase in pressure loss. The ball screw apparatus includes a screw shaft, a nut screwed with the screw shaft via a plurality of balls, and a cooling section cooling the nut. The plurality of balls to which preload is applied in a two-point contact state, with a preload direction as a tensile direction, are disposed between a screw groove of the screw shaft and a screw groove of the nut. Or, a ratio of the axial length L of the through hole axially formed in the nut and the diameter D of the through hole axially formed in the nut is given by an equation “10≦L/D≦60”.

    摘要翻译： 提供一种滚珠丝杠装置，其即使当螺母通过冷却收缩时也不太可能增加动摩擦转矩，并且其中冷却效果尽可能高，并且不会引起过度的加工效率下降和压力损失增加。 滚珠丝杠装置包括螺杆轴，通过多个滚珠与螺杆轴螺纹连接的螺母，以及冷却螺母的冷却部。 在螺钉轴的螺纹槽和螺母的螺纹槽之间，设置以预紧方式作为拉伸方向以两点接触状态施加预载荷的多个滚珠。 或者，在螺母中轴向形成的通孔的轴向长度L与在螺母中轴向形成的通孔的直径D的比率由等式“10＆nlE; L / D＆nlE; 60”给出。