公开(公告)号：US20080130697A1

公开(公告)日：2008-06-05

申请号：US11743700

申请日：2007-05-03

申请人： Motoharu MIYASHITA ,  Akihiro SHIMA ,  Masayoshi TAKEMI

发明人： Motoharu MIYASHITA ,  Akihiro SHIMA ,  Masayoshi TAKEMI

IPC分类号： H01S5/22

CPC分类号： H01S5/22 ,  H01S5/2201 ,  H01S5/3211 ,  H01S5/4031 ,  H01S5/4087

摘要： A semiconductor laser having a ridge structure, comprises a lower cladding layer, an active layer, and an upper cladding layer that are sequentially arranged and supported by a GaAs semiconductor substrate having a misorientation angle of 7 degrees or more. The active layer is AlGaAs. The upper and lower cladding layers are AlGaAsP and the composition ratio of P in the upper and lower cladding layers is higher than 0 and no more than 0.04.

摘要翻译： 具有脊结构的半导体激光器包括由具有7度或更大的取向角的GaAs半导体衬底依次布置和支撑的下包层，有源层和上包层。 有源层是AlGaAs。 上下包层为AlGaAsP，上，下包层的P的组成比高于0且不大于0.04。

公开(公告)号：US5638391A

公开(公告)日：1997-06-10

申请号：US574308

申请日：1995-12-18

申请人： Akihiro Shima ,  Yoriko Tanigami ,  Toshitaka Aoyagi

发明人： Akihiro Shima ,  Yoriko Tanigami ,  Toshitaka Aoyagi

IPC分类号： H01L23/12 ,  H01L23/36 ,  H01L27/10 ,  H01L27/15 ,  H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/40 ,  H01S3/19 ,  H01S3/04

CPC分类号： H01S5/02212 ,  H01S5/4025 ,  H01L2224/48091 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/02476 ,  H01S5/4043 ,  H01S5/405

摘要： A semiconductor laser device includes: a substrate serving as a heat sink; a thermal buffer plate disposed on the surface of the substrate; a first semiconductor laser chip having first and second main surfaces and including a first light emitting point in the vicinity of the first main surface, the first semiconductor laser chip being disposed on the surface of the thermal buffer plate at the second main surface; spaced apart thermal conductors disposed on the first main surface of the first semiconductor laser chip spaced from the first light emitting point with the first light emitting point between them; a second semiconductor laser chip having third and fourth main surfaces and including a second light emitting point in the vicinity of the third main surface, the second semiconductor laser chip being disposed on the thermal conductors at the third main surface so that the light radiation direction of the second semiconductor laser chip is parallel to the light radiation direction of the first semiconductor laser chip, wherein the second light emitting point is opposed to and close to the first emitting point. Even when the environmental temperature changes, the expansion and contraction of the interval between the light emitting points is smaller than in prior art structures.

摘要翻译： 半导体激光器件包括：用作散热器的衬底; 设置在所述基板的表面上的热缓冲板; 第一半导体激光器芯片，具有第一主表面和第二主表面，并且在第一主表面附近包括第一发光点，第一半导体激光器芯片设置在第二主表面的热缓冲板的表面上; 布置在第一半导体激光器芯片的第一主表面上的间隔开的热导体与第一发光点间隔开第一发光点; 具有第三和第四主表面并且在第三主表面附近包括第二发光点的第二半导体激光器芯片，第二半导体激光器芯片设置在第三主表面上的热导体上，使得第二半导体激光器芯片的光辐射方向 第二半导体激光器芯片平行于第一半导体激光器芯片的光辐射方向，其中第二发光点与第一发光点相对并且靠近第一发光点。 即使当环境温度变化时，发光点之间的间隔的膨胀和收缩比现有技术的结构小。

公开(公告)号：US5511048A

公开(公告)日：1996-04-23

申请号：US361478

申请日：1994-12-22

申请人： Mitsuru Irie ,  Takeshi Utakouji ,  Morihiro Karaki ,  Nobuo Takeshita ,  Manabu Koike ,  Yasuyuki Satou ,  Naoyuki Egusa ,  Masahisa Shinoda ,  Akira Ishimori ,  Akihiro Shima ,  Shigenori Yagi

发明人： Mitsuru Irie ,  Takeshi Utakouji ,  Morihiro Karaki ,  Nobuo Takeshita ,  Manabu Koike ,  Yasuyuki Satou ,  Naoyuki Egusa ,  Masahisa Shinoda ,  Akira Ishimori ,  Akihiro Shima ,  Shigenori Yagi

IPC分类号： G11B11/10 ,  G11B7/125 ,  G11B11/105 ,  G11B11/00

CPC分类号： G11B7/125 ,  G11B11/10504 ,  G11B11/10532 ,  G11B11/10595

摘要： The second harmonic wave of a solid laser light which is emitted from a second harmonic wave light source is divided into a plurality of laser beams by a diffraction grating. The divided laser beams are converged on a record carrier into a plurality of light spots by an optical head. Magnetic field generating coils for applying magnetic fields to the respective light spots in accordance with the recording signals from a signal line are disposed under the record carrier. Part of the solid laser light is reflected and input to a beam splitter. Since part of the light input to the beam splitter is taken out, a stabilizer controls the output of the solid laser light from the second harmonic wave light source, parallel recording/reproduction using the plurality of light spots which are arranged on the record carrier is enabled and the formation of the plurality of light spots is effectively controlled. Thus, a magneto-optical recording and reproducing apparatus which is capable of high-density recording and high-speed data transfer, which supplies a stable and accurate optical output, and which facilitates the control of the optical output is provided.

摘要翻译： 从二次谐波光源发射的固体激光的二次谐波通过衍射光栅被分成多个激光束。 分割的激光束通过光学头被会聚在记录载体上成多个光点。 根据来自信号线的记录信号将磁场施加到各个光点的磁场产生线圈设置在记录载体下方。 固体激光的一部分被反射并输入到分束器。 由于输入到分束器的光的一部分被取出，所以稳定器控制来自二次谐波光源的固体激光的输出，使用布置在记录载体上的多个光点进行并行记录/再现 并且有效地控制多个光点的形成。 因此，提供了能够进行高密度记录和高速数据传送的磁光记录和再现装置，其提供稳定且准确的光输出，并且有助于光输出的控制。

公开(公告)号：US4813050A

公开(公告)日：1989-03-14

申请号：US54764

申请日：1987-05-27

申请人： Akihiro Shima ,  Wataru Susaki

发明人： Akihiro Shima ,  Wataru Susaki

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/16 ,  H01S5/1064 ,  H01S5/2201 ,  H01S5/2232 ,  H01S5/2235

摘要： A high-power AlGaAs/GaAs laser device comprises: a ridge formed on the top surface of a substrate from one end thereof to the opposite end, wherein the width of the ridge is made narrower in regions near both the ends and wider in a middle region; a depression is formed in the wider region of the ridge; a clad layer is grown epitaxially over the top surface of the substrate; and an active layer is grown epitaxially on the clad layer, wherein the thickness of the active layer is thinner in portions just above the narrower ridge regions and relatively thicker in a portion just above the wider ridge region.

摘要翻译： 高功率AlGaAs / GaAs激光器件包括：从其一端到另一端形成在衬底的顶表面上的脊，其中脊的宽度在两个端部附近的区域中较窄，并且在中间较宽 地区; 在山脊的较宽区域形成凹陷; 包覆层在衬底的顶表面上外延生长; 并且在包覆层上外延生长活性层，其中有源层的厚度在较窄脊区域正上方的部分更薄，并且在较宽脊区域正上方的部分中相对较厚。

公开(公告)号：US08613537B2

公开(公告)日：2013-12-24

申请号：US13083629

申请日：2011-04-11

申请人： Koji Aono ,  Akihiro Shima

发明人： Koji Aono ,  Akihiro Shima

IPC分类号： F21V7/04

CPC分类号： F21S8/086 ,  B60Q1/0011 ,  F21W2131/10 ,  F21W2131/101 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B5/02 ,  G02B6/0008

摘要： A display and illumination system includes a light source section accommodating a light source; an optical fiber for transmitting light from the light source; a display illumination unit radiating light transmitted by the optical fiber; a light source module installed in the light source section, accommodating the light source, and optically connected to the optical fiber; a plug electrode installed in the light source module and supplying electric power to the light source; a convex portion on a first side of the light source module, engaging the optical fiber, and extracting light from the light source; and a concave portion located opposite the first side of the light source module and urging the convex portion toward the optical fiber with a constant force.

摘要翻译： 显示和照明系统包括容纳光源的光源部分; 用于从光源透射光的光纤; 显示照明单元，其照射由所述光纤传输的光; 光源模块，安装在所述光源部分中，容纳所述光源，并且光学连接到所述光纤; 插头电极，安装在光源模块中并向光源供电; 在光源模块的第一侧上的凸起部分，与光纤接合并从光源中提取光; 以及与光源模块的第一侧相对的凹部，并以恒定的力向该光纤推压凸部。

公开(公告)号：US06333946B1

公开(公告)日：2001-12-25

申请号：US09370911

申请日：1999-08-10

申请人： Motoharu Miyashita ,  Harumi Nishiguchi ,  Akihiro Shima ,  Yuji Ohkura

发明人： Motoharu Miyashita ,  Harumi Nishiguchi ,  Akihiro Shima ,  Yuji Ohkura

IPC分类号： H01S522

CPC分类号： B82Y20/00 ,  H01S5/2086 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3432

摘要： A forward mesa ridge-embedded semiconductor laser device provides a high power output and includes a base portion of a forward mesa ridge having a narrow width to stabilize transverse mode oscillation and an upper cladding layer having a thickness sufficient to reduce loss of the laser beam, a top portion of the forward mesa ridge being interposed between parts of the current blocking layer to reduce the device resistance. The upper cladding layer includes a first cladding layer having the forward mesa ridge and a second cladding layer opposite the first cladding layer. The second cladding layer is deposited over the first cladding layer through the forward mesa ridge and a current blocking layer is positioned on both sides of the forward mesa ridge.

摘要翻译： 正向台阶脊嵌入式半导体激光装置提供高功率输出，并且包括具有窄宽度的前台面脊的基部以稳定横模振荡，以及具有足以减少激光束损耗的厚度的上包层， 前部台面脊的顶部插入在电流阻挡层的部分之间以减小器件电阻。 上包层包括具有前台面脊的第一包层和与第一包层相对的第二包层。 第二包层通过前台面脊沉积在第一包层上，并且电流阻挡层位于前台面脊的两侧。

公开(公告)号：US5420066A

公开(公告)日：1995-05-30

申请号：US267211

申请日：1994-07-06

申请人： Akihiro Shima ,  Takeshi Miura ,  Tomoko Kadowaki ,  Norio Hayafuji

发明人： Akihiro Shima ,  Takeshi Miura ,  Tomoko Kadowaki ,  Norio Hayafuji

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01L21/302

CPC分类号： H01S5/2231 ,  H01S5/209 ,  H01S5/2219 ,  H01S5/32316

摘要： In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, an active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.

摘要翻译： 根据本发明，在连续进行晶体生长以产生至少第一导电型下包层，有源层，AlAs组成比为0.38至0.6的AlGaAs的第二导电型第一上包层之后， 具有大于0.6的AlAs组成比的AlGaAs的蚀刻停止层和AlAs组成比为0.38至0.6的AlGaAs的第二导电类型的第二上包层，使用包括以下的蚀刻剂来选择性地蚀刻第二上包层 有机酸和过氧化氢，从而形成一个脊。 结果，可以容易地制造具有期望的激光结构和低于830nm的振荡波长的脊型半导体激光器件，并且具有改进的可控性和再现性。

公开(公告)号：US5357535A

公开(公告)日：1994-10-18

申请号：US1547

申请日：1993-01-06

申请人： Akihiro Shima ,  Takeshi Miura ,  Tomoko Kadowaki ,  Norio Hayafuji

发明人： Akihiro Shima ,  Takeshi Miura ,  Tomoko Kadowaki ,  Norio Hayafuji

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/209 ,  H01S5/2219 ,  H01S5/32316

摘要： In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, and active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.

摘要翻译： 根据本发明，在连续进行晶体生长以产生至少第一导电型下包层和有源层之后，具有0.38至0.6的AlAs组成比的AlGaAs的第二导电型第一上包层， 具有大于0.6的AlAs组成比的AlGaAs的蚀刻停止层和AlAs组成比为0.38至0.6的AlGaAs的第二导电类型的第二上包层，使用包括以下的蚀刻剂来选择性地蚀刻第二上包层 有机酸和过氧化氢，从而形成一个脊。 结果，可以容易地制造具有期望的激光结构和低于830nm的振荡波长的脊型半导体激光器件，并且具有改进的可控性和再现性。

公开(公告)号：US5161166A

公开(公告)日：1992-11-03

申请号：US760396

申请日：1991-09-16

申请人： Akihiro Shima ,  Kunihiko Isshiki

发明人： Akihiro Shima ,  Kunihiko Isshiki

IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S5/223

CPC分类号： H01L33/0062 ,  H01S5/16 ,  H01S5/2231

摘要： A double heterojunction semiconductor laser according to the invention includes first and third cladding layers sandwiching an active layer. The third cladding layer includes a mesa opposite a light emitting region of the active layer. The mesa is confined by a current blocking layer. A cap layer that is part of the mesa is used as a dopant diffusion source to dope a light emitting region of the active layer heavily. A second cladding layer may be present between the active layer and third cladding layer having the same conductivity type as the third cladding layer adjacent the light emitting region but the opposite conductivity type elsewhere. A semiconductor laser according to the invention may also include a stripe groove structure. The semiconductor lasers include pnpn structures outside the light emitting region and in window structures adjacent the facets of the semiconductor laser for suppressing leakage currents, thereby increasing laser efficiency and reducing threshold current while increasing power output.

摘要翻译： 根据本发明的双异质结半导体激光器包括夹着有源层的第一和第三覆层。 第三覆层包括与有源层的发光区域相对的台面。 台面被当前阻挡层限制。 作为台面的一部分的盖层用作掺杂剂扩散源以重掺杂活性层的发光区域。 第二包覆层可以存在于与邻近发光区域但与其它位置相反的导电类型的与第三覆层相同的导电类型的有源层和第三覆层之间。 根据本发明的半导体激光器还可以包括条纹槽结构。 半导体激光器包括发光区域外的pnpn结构和邻近半导体激光器的面的窗口结构，用于抑制漏电流，从而在增加功率输出的同时增加激光效率并降低阈值电流。

公开(公告)号：US5132688A

公开(公告)日：1992-07-21

申请号：US661656

申请日：1991-02-27

申请人： Akihiro Shima ,  Takahiko Fujisaka ,  Yoshimasa Ohashi

发明人： Akihiro Shima ,  Takahiko Fujisaka ,  Yoshimasa Ohashi

IPC分类号： G01S7/292 ,  G01S13/532

CPC分类号： G01S13/532

摘要： A pulsed doppler radar system having an improved detection probability, comprising an antenna unit, a transmitter for transmitting a signal through the antenna unit, a receiver for receiving a signal reflected by a target through the antenna unit to provide a reception signal. A processing unit which receives the reception signal from the receiver determines, in accordance with a range of the target and a signal-to-noise ratio and bandwidth of the reception signal, an optimum integration number which maximizes the detection probability and performs coherent integration on the reception signal by the number of times equal to the determined optimum integration number thereby outputting a signal having a predetermined level. Such a signal is fed to a display and an image of the target is displayed on a display.

摘要翻译： 具有改进的检测概率的脉冲多普勒雷达系统，包括天线单元，用于通过天线单元发送信号的发射机，用于通过天线单元接收由目标反射的信号以提供接收信号的接收机。 从接收器接收接收信号的处理单元根据目标的范围和接收信号的信噪比和带宽来确定使检测概率最大化并执行相干积分的最佳积分数 接收信号的次数等于所确定的最佳积分数，从而输出具有预定电平的信号。 这样的信号被馈送到显示器，并且目标的图像被显示在显示器上。