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    Semiconductor laser with COD preventing disordered regions
    1.
    发明授权
    Semiconductor laser with COD preventing disordered regions 失效
    半导体激光器具有COD防止无序区域

    公开(公告)号：US5469457A

    公开(公告)日：1995-11-21

    申请号：US149958

    申请日：1993-11-10

    申请人： Yutaka Nagai ,  Akihiro Shima

    发明人： Yutaka Nagai ,  Akihiro Shima

    IPC分类号： H01S5/00 ,  H01S5/022 ,  H01S5/042 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/18 ,  H01S3/085

    CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/02232 ,  H01S5/168 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3432

    摘要： A semiconductor laser includes: a first conductivity type semiconductor substrate; a first conductivity type lower cladding layer disposed on the substrate; a quantum well structure disposed on the lower cladding layer; a second conductivity type upper cladding disposed on the quantum well structure; a ridge including a stripe-shaped second conductivity type semiconductor of a length extending in the laser resonator length direction reaching neither semiconductor laser facet and disposed on the upper cladding layer; disordered regions, i.e, window structures, formed in the quantum well structure in the vicinity of the laser resonator facets by ion-implanting a dopant impurity; and a first conductivity type current blocking layer, disposed on the upper cladding layer on the disordered quantum well structure layer, burying the ridge. Accordingly, in the window structure regions, flow of a current that does not produce laser light is prevented, resulting in a semiconductor laser having a high power light output, a low threshold current, and a low operational current.

    摘要翻译： 半导体激光器包括：第一导电型半导体衬底; 设置在所述基板上的第一导电型下包层; 设置在下包层上的量子阱结构; 设置在量子阱结构上的第二导电型上包层; 包括沿激光谐振器长度方向延伸的长度的条状第二导电型半导体的脊不到达半导体激光刻面并且设置在上覆层上; 通过离子注入掺杂剂杂质在激光谐振器面附近在量子阱结构中形成的无序区域，即窗结构; 以及第一导电型电流阻挡层，设置在无序量子阱结构层上的上覆层上，埋入脊。 因此，在窗口结构区域中，防止不产生激光的电流的流动，导致具有高功率光输出，低阈值电流和低工作电流的半导体激光器。

    Semiconductor laser with improved window structure
    2.
    发明授权
    Semiconductor laser with improved window structure 失效
    具有改善窗户结构的半导体激光器

    公开(公告)号：US5577063A

    公开(公告)日：1996-11-19

    申请号：US469820

    申请日：1995-06-06

    申请人： Yutaka Nagai ,  Akihiro Shima

    发明人： Yutaka Nagai ,  Akihiro Shima

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： H01S5/32 ,  B82Y20/00 ,  H01S5/2063 ,  H01S5/2231 ,  H01S5/3413 ,  H01S5/3432

    摘要： A semiconductor laser includes a compound semiconductor substrate of a first conductivity type; successively disposed on said semiconductor substrate, a first conductivity type lower cladding layer, an active layer including a multiple quantum well structure, first and second upper cladding layers of a second conductivity type opposite the first conductivity type, and a first contacting layer of the second conductivity type in electrical contact with the second upper cladding layer; first and second electrodes in electrical contact with the semiconductor substrate and the first contacting layer, respectively, the semiconductor laser including opposed facets transverse to the lower cladding and the first and second upper cladding layers, the second upper cladding layer having a ridge shape that extends between the facets of the semiconductor laser and is centrally disposed on the first upper cladding layer; a first conductivity type current blocking layer disposed on and between the first upper cladding layer and the first contacting layer, contacting opposite sides of the ridge, and extending between the facets; and a window structure contiguous with each of the facets, each window structure comprising a region including a dopant impurity, each region being disposed within parts of the lower cladding layer, the active layer, and the first upper cladding layer opposite the ridge but not extending substantially into the second upper cladding layer, the multiple quantum well structure of the active layer being disordered in each window region.

    摘要翻译： 半导体激光器包括第一导电类型的化合物半导体衬底; 依次设置在所述半导体衬底上，第一导电型下包层，包括多量子阱结构的有源层，与第一导电类型相反的第二导电类型的第一和第二上覆层，以及第二导电类型的第二接触层 导电类型与第二上包层电接触; 分别与半导体衬底和第一接触层电接触的第一和第二电极，所述半导体激光器包括横向于下包层和第一和第二上包层的相对面，第二上包层具有延伸的脊形状 在所述半导体激光器的所述面之间并且居中地设置在所述第一上包层上; 第一导电型电流阻挡层，设置在第一上包覆层和第一接触层之间并且位于第一接触层之间，接触脊的相对侧并且在两个小面之间延伸; 以及与每个小平面相邻的窗口结构，每个窗口结构包括包括掺杂剂杂质的区域，每个区域设置在下包层，有源层和与脊相对的但不延伸的第一上包层的部分内 基本上进入第二上包层，活性层的多量子阱结构在每个窗口区域中是无序的。

    Semiconductor laser
    3.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5781577A

    公开(公告)日：1998-07-14

    申请号：US586155

    申请日：1996-01-17

    申请人： Yutaka Nagai ,  Akihiro Shima

    发明人： Yutaka Nagai ,  Akihiro Shima

    IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/34 ,  H01S3/18

    CPC分类号： H01S5/162 ,  H01S5/168 ,  H01S5/2063 ,  H01S5/3428

    摘要： A semiconductor laser includes a first conductivity type semiconductor substrate, a first conductivity type lower cladding layer, a quantum well structure active layer including alternately laminated barrier and well layers, a disordered region extending to laser resonator facets, a second conductivity type first upper cladding layer disposed on the quantum well structure active layer, a ridge structure disposed on the first cladding layer, and having a first region not proximate the laser resonator facets including a second conductivity type second upper cladding layer and a second conductivity type first contact layer and a second region, proximate a laser resonator facet having a first conductivity type first semiconductor layer of the same material and thickness as the second upper cladding layer and a first conductivity type second semiconductor layer of same material as the first contact layer, a first conductivity type current blocking layer having a band gap energy larger than that of the second upper cladding burying the ridge structure, and a second conductivity type second contact layer disposed on the current blocking layer and the ridge structure. The band gap energy at the laser resonator facets is larger than in other regions and serves as a window structure. A refractive index distribution in the transverse direction confines laser light in the transverse direction below the ridge structure and there is no astigmatism.

    摘要翻译： 半导体激光器包括第一导电型半导体衬底，第一导电型下包层，包括交替层叠的势垒层和阱层的量子阱结构有源层，延伸到激光谐振器面的无序区域，第二导电类型的第一上覆层 设置在量子阱结构有源层上，脊结构设置在第一覆层上，并且具有不邻近激光谐振器面的第一区域，该第一区域包括第二导电类型的第二上覆层和第二导电类型的第一接触层，第二导电类型的第二接触层 区域，邻近具有与第二上包层相同材料和厚度的第一导电类型的第一半导体层和与第一接触层相同材料的第一导电类型的第二半导体层的激光谐振器面，第一导电类型电流阻挡 带隙能量大于的层 第二上包层埋设脊结构的第二导电类型的第二接触层，以及设置在电流阻挡层和脊结构上的第二导电类型的第二接触层。 激光谐振器面处的带隙能量大于其他区域，并且用作窗口结构。 横向上的折射率分布将激光沿着脊结构的横向限制，并且没有像散。

    Optical information recording apparatus and optical information recording method
    6.
    发明授权
    Optical information recording apparatus and optical information recording method 有权
    光信息记录装置和光信息记录方法

    公开(公告)号：US08050165B2

    公开(公告)日：2011-11-01

    申请号：US12480335

    申请日：2009-06-08

    申请人： Yutaka Nagai ,  Koichiro Nishimura ,  Junya Iizuka

    发明人： Yutaka Nagai ,  Koichiro Nishimura ,  Junya Iizuka

    IPC分类号： G11B7/0065

    CPC分类号： G03H1/26 ,  G03H2001/185 ,  G03H2001/2655 ,  G11B7/0065 ,  G11B20/1217 ,  G11B2020/1288 ,  G11B2020/1289 ,  G11B2220/2504

    摘要： A need to effectively record data of various sizes on a large-capacity holographic memory capable of high-speed recording is achieved, for example, by curing a first part of the holographic recording which is able to be multiplex-recorded in one or more units of a predetermined volume, and by not recording/curing a second part which is not able to be multiplex-recorded in a predetermined volume at a timing when the first recording part is cured. Also the above need can be achieved by, another example, by adding dummy data to the second part. Alternatively, the second part can be recorded on another track, in which it is possible to record in different units, e.g. by bit recording in a track that utilizes a DVD recording format. According to the present examples, we can record data of various sizes on the holographic memory effectively while performing large-capacity and high-speed holographic recording.

    摘要翻译： 可以在能够高速记录的大容量全息存储器上有效地记录各种尺寸的数据的需要，例如通过固化能够被多路复用记录在一个或多个单元中的第一部分全息记录 并且通过在第一记录部件被固化的时刻不记录/固化不能被多路复用记录在预定体积中的第二部分。 另外，通过向第二部分添加虚拟数据也可以实现上述需要。 或者，第二部分可以记录在另一个轨道上，其中可以以不同的单位记录，例如， 通过利用DVD记录格式的轨道中的比特记录。 根据本实施例，在进行大容量高速全息记录的同时，可以有效地在全息存储器上记录各种尺寸的数据。

    Multi-Layer Optical Disc, and Recording Method and Apparatus for Multi-Layer Optical Disc
    7.
    发明申请
    Multi-Layer Optical Disc, and Recording Method and Apparatus for Multi-Layer Optical Disc 有权
    多层光盘，多层光盘记录方法及装置

    公开(公告)号：US20080101209A1

    公开(公告)日：2008-05-01

    申请号：US11862231

    申请日：2007-09-27

    申请人： Yutaka Nagai ,  Koichiro Nishimura

    发明人： Yutaka Nagai ,  Koichiro Nishimura

    IPC分类号： G11B7/26

    CPC分类号： G11B7/1267 ,  G11B7/24038 ,  G11B2007/0009

    摘要： Each layer includes a data recording area and a test writing area divided into a plurality of small areas, wherein the small areas of the test writing area are recorded in advance so that other each layer can make a combination of recorded and unrecorded states with respect to the small area, where OPC is carried out, in a layer where OPC is carried out. Moreover, OPC is carried out to each small area, where a combination of recorded/unrecorded states of other each layer differs from each other, to thereby calculate, as the optimum power, an average value of the result of each OPC or a central value of the dispersion thereof.

    摘要翻译： 每个层包括数据记录区域和分成多个小区域的测试写入区域，其中预先记录测试写入区域的小区域，使得其他每层可以相对于记录区域和未记录状态组合 在执行OPC的层中执行OPC的小区域。 此外，对每个小区域进行OPC，其中每层的记录/未记录状态的组合彼此不同，从而计算每个OPC的结果的平均值或中心值 的分散体。

    Shoe with slip preventive member
    8.
    发明授权
    Shoe with slip preventive member 有权
    鞋防滑成员

    公开(公告)号：US07322131B2

    公开(公告)日：2008-01-29

    申请号：US10542039

    申请日：2004-11-15

    申请人： Yoshio Yamashita ,  Yasuhiro Morikawa ,  Yutaka Nagai

    发明人： Yoshio Yamashita ,  Yasuhiro Morikawa ,  Yutaka Nagai

    IPC分类号： A43B23/28

    CPC分类号： A43B13/223 ,  A43B13/14

    摘要： An object of the present invention is to enhance durability of the non-slip member of the shoe where a lot of non-slip protuberances are fixed to the surface of a base fabric. The shoe of the present invention comprises an upper 20 that covers an instep of a foot, a sole 21 having a ground contact surface and a non-slip member 1 provided on an outer surface of the upper 20 and/or the sole 21. The non-slip member 1 comprises a base fabric 12composed of a knitted fabric of a multilayer structure, the base fabric including an external knitted fabric layer 123 having a first surface 121 exposed to the outside and an internal knitted fabric layer 124 having a second surface 122 on a opposite side of the first surface 121 and a plurality of resin or rubber non-slip protuberances 1 that are fixed to the base fabric 12 and protrude from the first surface 121 of the external knitted fabric layer 123. A yarn constituting the external knitted fabric layer 123 is thicker than a yarn constituting the internal knitted fabric layer 124.

    摘要翻译： 本发明的一个目的是提高鞋子的防滑部件的耐用性，其中许多防滑突起固定在基底织物的表面上。 本发明的鞋包括覆盖脚背的上部20，具有接地表面的鞋底21和设置在鞋面20和/或鞋底21的外表面上的防滑构件1。 防滑构件1包括由多层结构的针织物构成的基底织物12，该基底织物包括具有暴露于外部的第一表面121的外部编织物层123和具有第二个外部织物层124的内部针织物层124 第一表面121的相反侧的表面122和固定到基底织物12并从外部编织物层123的第一表面121突出的多个树脂或橡胶防滑突起1。 构成外针织物层123的纱线比构成内针织物层124的纱线厚。