摘要:
The present invention refers to a method for producing a quartz glass crucible for use in pulling silicon single crystal, said crucible having at least a double-layer structure comprising a pore-free transparent inner layer and an opaque base body or outer layer having pores, characterized in that at least the base body is formed with a silica powder maintained in a gas having a mixing ratio of 0.0005 to 0.0065 kg/kg (dry gas), and a quartz glass crucible produced by said production method. The obtained crucible has an average OH group concentration of 50 ppm or lower and is capable of suppressing the vibration occurring on the surface of silicon melt during pulling the silicon single crystal. Further the obtained crucible suffers less deformation of the crucible on pulling the silicon single crystal.
摘要:
A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.
摘要:
A known quartz glass crucible for crystal pulling consists of a crucible wall, having an outer layer which is provided in an external area thereof with a crystallisation promoter which results in crystallisation of quartz glass, forming cristobalite when the quartz glass crucible is heated according to specified use in crystal pulling. The aim of the invention is to provide a quartz glass crucible which has a long service life. As a result, the crystallisation promoter contains, in addition to a silicon, a first component which acts as a reticulating agent in quartz glass and a second component which is free of alkali metals and which acts as an agent forming separating points in quartz glass. The above mentioned components are contained and incorporated into a doping area (8) of the outer layer (6) having a layer thickness of more than 0.2 mm.
摘要:
A silica glass crucible includes a thin barium-doped inner layer, a stable, bubble-free intermediate layer, and a stable opaque outer layer. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica. The crucible demonstrates reduced bubble growth during a Czochralski process. As a result of the thin barium-doped layer and the reduced bubble growth, the inner surface of the crucible is uniformly minimally textured during a CZ process. The present crucible is especially suited for intense CZ processes for manufacturing silicon ingots used for solar cells or with silicon that is heavily doped with antimony, boron, or arsenic.
摘要:
A quartz glass crucible which has a non-transparent outer layer formed through melting a natural silica powder and a transparent layer formed in the inside of the outer layer, wherein the transparent layer comprises a natural quartz layer having a thickness of 0.4 to 5.0 mm transparent layer comprising a synthetic quarts glass is formed thereon in the inside of the crucible in the range of 0.15 to 0.55 L relative to L, which is the distance from the center of the bottom of the inner surface of the quartz glass crucible to the upper end thereof along the inner surface thereof. The quartz glass crucible can be suitably used for suppressing the occurrence of vibration and reducing the generation of roughened face in the surface of a crucible, and thus for pulling up a silicon single crystal with enhanced stability.
摘要:
It is an object of the present invention to provide a hydrogen-doped silica powder that is useful in the formation of a quartz glass crucible that is capable of pulling a silicon single crystal without causing a state having dislocations in the silicon single crystal due to peeling of quartz glass segment. It is a further object of the invention to provide a quartz glass crucible for use in pulling a silicon single crystal whose inner surface is formed by use of the hydrogen-doped silica powder and a producing method of the silica powder.In order to achieve the objects above, the present invention provides a hydrogen-doped silica powder for use in producing a quartz glass crucible for use in pulling a silicon single crystal, wherein the silica powder is made of synthetic silica powder, natural silica powder or a mixture thereof, with a hydrogen concentration being in the range of 1×1017 to 5×1019 molecules/cm3, and a producing method thereof, and a quartz glass crucible for pulling a silicon single crystal whose inner surface is made of the silica powders.
摘要翻译:本发明的目的是提供一种可用于形成石英玻璃坩埚的氢掺杂二氧化硅粉末,其能够拉伸硅单晶而不引起由于剥离而在硅单晶中具有位错的状态 的石英玻璃片段。 本发明的另一个目的是提供一种用于拉动其内表面使用掺氢二氧化硅粉末形成的硅单晶的石英玻璃坩埚和二氧化硅粉末的制造方法。 为了实现上述目的,本发明提供一种用于制造用于拉制硅单晶的石英玻璃坩埚的氢掺杂二氧化硅粉末,其中二氧化硅粉末由合成二氧化硅粉末,天然二氧化硅粉末或 其浓度在1×10 17至5×10 19分子/ cm 3的范围内的混合物及其制备方法, 以及用于拉出其内表面由二氧化硅粉末制成的单晶硅的石英玻璃坩埚。
摘要:
A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.
摘要:
The present invention provides a process and a device for producing a quartz glass crucible, which generates a stable ring-like arc and is suitable for the production of an excellent crucible having the large open diameter.In a production process and a device for producing a quartz glass crucible, wherein a quartz powder in a mould is heated to be fused by an arc discharge of the electrodes being positioned at around of a rotational axis of a mould, this invention is characterized by using an electrode structure, in which electrodes neighboring each other are positioned at regular intervals in the ring configuration, to form the stable ring-like arc being generated between the electrodes neighboring each other without generating an continuous arc between electrodes facing each other across a central portion of the ring, and heating and fusing a quarts powder.
摘要:
A composite crucible for pulling up monocrystalline silicon, which is superior in shape stability and suitable for a large-sized one is provided. The composite crucible is characterized in that a carbonaceous material as an outer layer and a quartz glass as an inner layer are integrally formed. Methods for preparing and regenerating a composite crucible are also disclosed.
摘要:
Known is a method of producing a quartz glass crucible in which a crucible base body is provided at least in part with an inner layer in which the formation of cristobalite is induced by using a crystallization promoter. On the basis thereof, in order to provide an inexpensive method of producing a quartz glass crucible with reproducible characteristics for long service lives, it is suggested according to the invention that the crystallization promoter and a reducing substance are introduced into the inner layer.