Abstract:
A micro-electromechanical capacitive strain sensor. The micro-electromechanical capacitive strain sensor comprises a first bent beam, a second bent beam, and a straight center beam. The first bent beam, second bent beam, and straight center beam are aligned in the X-axis with the straight center beam located between the first and second bent beams. The first bent beam, second bent beam, and straight center beam are disposed between two anchors. The two anchors are aligned in the Y-axis. The first bent beam is bent away from the center beam and the second bent beam is bent towards the center beam to provide a set of differential capacitors with respect to the center beam, wherein the center beam serves as a common reference with respect to the first and second bent beams.
Abstract:
A sensor comprises a semiconductor pellet (10) including a working portion (11) adapted to undergo action of a force, a fixed portion (13) fixed on the sensor body, and a flexible portion (13) having flexibility formed therebetween, a working body (20) for transmitting an exterted force to the working portion, and detector means (60-63) for transforming a mechanical deformation produced in the semiconductor pellet to an electric signal to thereby detect a force exerted on the working body as an electric signal. A signal processing circuit is applied to the sensor. This circuit uses analog multipliers (101-109) and analog adders/subtracters (111-113), and has a function to cancel interference produced in different directions. Within the sensor, two portions (E3, E4-E8) located at positions opposite to each other and producing a displacement therebetween by action of a force are determined. By exerting a coulomb force between both the portions, the test of the sensor is carried out. Further, a pedestal (21, 22) is provided around the working body (20). The working body and the pedestal are located with a predetermined gap or spacing therebetween. A displacement of the working body is caused to limitatively fall within a predetermined range corresponding to the spacing. The working body and the pedestal are provided by cutting a same common substrate (350, 350′).
Abstract:
In view of conventional circumstances where a surface pressure distribution sensor has poor reproducibility when mass-produced, so it has been desired to stabilize sensing properties, to secure reliability, and to improve productivity and yield, the invention achieves stabilizing sensing properties, securing reliability, and improving productivity and yield by optimizing the size of the flow barrier provided inside the sealing agent and the gap, the material and location of the contact, and the tension of the common electrode film.
Abstract:
It is an object of the present invention to provide a touch mode capacitive pressure sensor having higher pressure durability than conventional sensors. In this invention, a touch mode capacitive pressure sensor has a diaphragm made from boron-doped silicon, and the boron concentration at the top face of the diaphragm is equal to or greater than 1×1019 cm−3 and less than 9×1019 cm−3. Further, in this invention, a touch mode capacitive pressure sensor has a conductive diaphragm made by doping of an impurity and anisotropic etching, and the etch pit density on the top face of the diaphragm is equal to or less than five per μm2, and preferably equal to or less than one per μm2. As a result, the pressure durability of the diaphragm is greatly improved.
Abstract:
A method for making capacitive silicon pressure sensors and pressure switches with high long-term stability involves fabrication by wafer bonding of a silicon substrate wafer with another silicon wafer where a highly boron-doped diaphragm is defined by a self-aligned doping process through a window defined on an insulating layer. The long-term stability of the device is secured by anisotropically etching the window, e.g. by reactive ion etching, so as to create vertical window walls. The flatness of the diaphragm can be secured by the provision of an insulating film on the backside of the substrate wafer that compensates the stress on the silicon diaphragm created by the insulating layer present between the two wafers. The cavity formed by the window may contain gas or it may be evacuated in which case the fabrication method may also involve a process step facilitating the evacuation of the cavity and sealing the same using metal employed for making electrical connections.
Abstract:
An apparatus and method for sensing accelerations and other forces. The apparatus having a cover plate having an inner portion and an outer portion, the inner portion being formed with a plurality of spaced apart electrodes projecting therefrom and defining spaces therebetween; and a proof mass having an inner portion being formed with a plurality of spaced apart electrodes projecting therefrom and defining spaces therebetween, an outer portion being coupled to the outer portion of the cover plate with the electrodes being electrically isolated from the cover plate electrodes, and the proof mass electrodes and spaces being aligned with the cover plate electrodes and spaces such that, when the inner portion of the proof mass is deflected toward the cover plate, the proof mass electrodes pass into the spaces between the cover plate electrodes, and a flexible suspension member coupled between the inner and outer proof mass portions.
Abstract:
A sensor comprises a semiconductor pellet (10) including a working portion (11) adapted to undergo action of a force, a fixed portion (13) fixed on the sensor body, and a flexible portion (13) having flexibility formed therebetween, a working body (20) for transmitting an exerted force to the working portion, and detector means (60-63) for transforming a mechanical deformation produced in the semiconductor pellet to an electric signal to thereby detect a force exerted on the working body as an electric signal. A signal processing circuit is applied to the sensor. This circuit uses analog multipliers (101-109) and analog adders/subtractors (111-113), and has a function to cancel interference produced in different directions. Within the sensor, two portions (E3, E4-E8) located at positions opposite to each other and producing a displacement therebetween by action of a force are determined. By exerting a coulomb force between both the portions, the test of the sensor is carried out. Further, a pedestal (21, 22) is provided around the working body (20). The working body and the pedestal are located with a predetermined gap or spacing therebetween. A displacement of the working body is caused to limitatively fall within a predetermined range corresponding to the spacing. The working body and the pedestal are provided by cutting a same common substrate (350, 350′).
Abstract:
A micromachined pressure sensor is formed with a minimum number of masking and processing steps. The structure measures changes in pressure by deflection of structures having capacitive plates external to a sealed cavity so that electrical leads can be readily connected to the plates formed on the structures. The pressure sensor includes a substrate, a base secured to the substrate and a diaphragm secured to the base to define a sealed cavity. A skirt may extend outwardly from the base above the substrate to form one of the plates of the capacitor with another plate formed on the base. Changes in ambient pressure deflect the skirt toward or away from the electrode on the substrate, changing the effective capacitance between the electrodes. Electrical connections may be made to the electrode on the skirt and the electrode on the substrate utilizing electrical connectors which are external to the base and thus external to the sealed cavity.
Abstract:
A sensor comprises a semiconductor pellet (10) including a working portion (11) adapted to undergo action of a force, a fixed portion (13) fixed on the sensor body, and a flexible portion (13) having flexibility formed therebetween, a working body (20) for transmitting an exterted force to the working portion, and detector means (60-63) for transforming a mechanical deformation produced in the semiconductor pellet to an electric signal to thereby detect a force exerted on the working body as an electric signal. A signal processing circuit is applied to the sensor. This circuit uses analog multipliers (101-109) and analog adders/subtracters (111-113), and has a function to cancel interference produced in different directions. Within the sensor, two portions (E3, E4-E8) located at positions opposite to each other and producing a displacement therebetween by action of a force are determined. By exerting a coulomb force between both the portions, the test of the sensor is carried out. Further, a pedestal (21, 22) is provided around the working body (20). The working body and the pedestal are located with a predetermined gap or spacing therebetween. A displacement of the working body is caused to limitatively fall within a predetermined range corresponding to the spacing. The working body and the pedestal are provided by cutting a same common substrate (350, 350').
Abstract:
A micromechanical component includes a fixed micromechanical structure having a pair of capacitor plates being formed of one or more conductive layers, and a movable micromechanical structure being formed of a dielectric layer to be introduced into or removed from an interstice between the plates. A capacitance change is obtained through the resilient or freely movable dielectric, so that the component can be inserted as a proportional or a non-proportional force sensor. A microsystem with an integrated circuit and a micromechanical component with a movable dielectric, as well as a production method for the component and the microsystem, are also provided.