Abstract:
Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four XMR elements connected in a full bridge circuit including parallel branches. The at least four XMR elements are GMR or TMR elements (GMR=giant magnetoresistance; TMR=tunnel magnetoresistance). Two diagonal XMR elements of the full bridge circuit include the same shape anisotropy, wherein XMR elements in the same branch of the full bridge circuit include different shape anisotropies.
Abstract:
A magnetic sensor includes a substrate, magnetoresistive effect elements arranged on a surface of the substrate, a first wiring line arranged on a surface of the substrate, an insulation layer configured to cover the magnetoresistive effect elements and the first wiring line, a soft magnetic body arranged on the insulation layer, and a second wiring line arranged on the insulation layer, wherein the magnetoresistive effect elements each extend in a first direction and are arranged while being separated from each other in a second direction orthogonal to the first direction in a case of viewing in plan the substrate, the soft magnetic body includes a first direction extension portion that extends in the first direction, and when viewed in plan, the first direction extension portion is arranged between the magnetoresistive effect elements, and the second wiring line is connected to the first wiring line.
Abstract:
A magnetic sensor includes an MR element and two bias magnetic field generation units. The two bias magnetic field generation units are spaced apart from each other along a first direction and configured to cooperate with each other to generate a bias magnetic field. Each bias magnetic field generation unit includes a ferromagnetic layer and an antiferromagnetic layer stacked along a second direction orthogonal to the first direction. An element placement region is formed between the two bias magnetic field generation units when viewed in the second direction in an imaginary plane perpendicular to the second direction and intersecting the MR element. The element placement region includes a middle region and two end regions. The MR element is placed to lie within the middle region in the imaginary plane.
Abstract:
A magnetic property determination apparatus that detects a magnetic property of each magnetic material included in a paper sheet transported through a transport path and determines the magnetic materials. The magnetic property determination apparatus includes a magnetic detection unit that generates on the transport path a bias magnetic field having a magnetic field direction inclined to a transport surface of the paper sheet by a specific angle and detects the magnetic charge of the magnetic materials by detecting variation of the bias magnetic field; and a magnetization unit that is arranged upstream of the magnetic detection unit in the transport direction and magnetizes the magnetic materials by generating on the transport path a magnetization magnetic field having a magnetic field direction oriented in a direction different from the direction of the bias magnetic field. At a position at which the magnetic detection unit detects the magnetism, the magnetic materials are in a state in which the magnetic materials are magnetized in mutually different magnetization directions according to coercive force thereof.
Abstract:
A method for determining of a position of an object using a sensor arrangement that includes a first magnetoresistive element and a second magnetoresistive element. A source provides a magnetic field with first and second magnetic poles. The source is arranged between the first magnetoresistive element and the second magnetoresistive element with the first magnetic pole facing the first magnetoresistive element and the second magnetic pole facing the second magnetoresistive element. The first magnetoresistive element is arranged in the magnetic field and provides a first output signal dependent on a position of the first magnetoresistive element relative to the magnetic field source. The second magnetoresistive element is arranged in the magnetic field and provides a second output signal dependent on a position of the second magnetoresistive element relative to the magnetic field source. A measurement unit determines a position of the magnetic field source relative to the first and the second magnetoresistive elements dependent on the first output signal and the second output signal.
Abstract:
In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract:
A first magnetoelectric conversion element group including magnetoelectric conversion elements, and a second magnetoelectric conversion element group including magnetoelectric conversion elements are arranged across a cutout of a wiring board. The first and second groups are arranged line-symmetrically with respect to a first imaginary line. The elements in the first and second groups are arranged line-symmetrically with respect to a second imaginary line. The first imaginary line and the second imaginary line orthogonally intersect each other at a placement position at which a current path to be measured is placed. The orientation of the sensitivity axis of each of a plurality of magnetoelectric-conversion-element sets having point symmetry about the placement position is parallel or antiparallel. An element spacing, which is spacing between neighboring elements in the first and second groups, is narrower than a group spacing, which is the narrowest spacing between the first and second groups.
Abstract:
Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four XMR elements connected in a full bridge circuit including parallel branches. The at least four XMR elements are GMR or TMR elements (GMR=giant magnetoresistance; TMR=tunnel magnetoresistance). Two diagonal XMR elements of the full bridge circuit include the same shape anisotropy, wherein XMR elements in the same branch of the full bridge circuit include different shape anisotropies.
Abstract:
The present disclosure provides for techniques to improve the sensitivity of magnetic sensor systems. One embodiment of a magnetic sensor system includes a magnetic biasing body comprised of a hard magnetic material and including a recess therein. The recess corresponds to a magnetic flux guidance surface of the magnetic biasing body. The magnetic sensor system also includes a magnetic sensing element arranged in or proximate to the recess. A magnetic flux concentrator, which is made of a soft magnetic material, is disposed in the recess between the magnetic flux guidance surface and the magnetic sensing element. Other techniques are also described.
Abstract:
A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.