公开(公告)号：US4943737A

公开(公告)日：1990-07-24

申请号：US421230

申请日：1989-10-12

申请人： Tzen-Wen Guo ,  Jonathan J. Stinehelfizer

发明人： Tzen-Wen Guo ,  Jonathan J. Stinehelfizer

IPC分类号： H01L21/8249 ,  G05F1/56 ,  G05F3/20 ,  G05F3/26 ,  G05F3/30 ,  H01L27/06

CPC分类号： G05F3/20 ,  G05F3/267 ,  Y10S323/907

摘要： A bipolar/CMOS regulator circuit for generating a CMOS gate-controlling voltage, which varies favorably with temperature, power supply voltage and process corner so as to yield a well-controlled CMOS current includes a bipolar bandgap regulator circuit portion (12) and a conversion circuit portion (14). The conversion circuit portion (14) is formed of a current mirror section (18), a current source section (20) and an output section (22).

公开(公告)号：US4868415A

公开(公告)日：1989-09-19

申请号：US194356

申请日：1988-05-16

申请人： William C. Dunn

发明人： William C. Dunn

IPC分类号： H01L27/04 ,  G05F3/20 ,  G05F3/24 ,  H01L21/822 ,  H02M3/07 ,  H03K5/02

CPC分类号： G05F3/20 ,  G05F3/24

摘要： A voltage level conversion circuit manufacturable in a standard semiconductor process is provided wherein an output voltage having a magnitude greater than the supply voltage and greater than the gate oxide breakdown voltage of the MOS devices is produced. A voltage level shifter circuit alternately charges a pair of capacitors which in turn alternately charges a second pair of capacitors. The second pair of capacitors is coupled to the output to produce the shifted output voltage having a frequency that is double the frequency of the input to the voltage level shifter circuit.

公开(公告)号：US4837496A

公开(公告)日：1989-06-06

申请号：US173758

申请日：1988-03-28

申请人： George Erdi

发明人： George Erdi

IPC分类号： G05F3/20

CPC分类号： G05F3/20

摘要： A start-up circuit/current source includes a first current path including serially connected first field effect transistor, first resistor, first bipolar transistor, and second resistor. A second current path includes a second field effect transistor, a second bipolar transistor, and a third resistor. The base electrodes of the first and second bipolar transistors are interconnected, and the base and collector of the second bipolar transistor are shorted together. A first current source includes a bipolar transistor serially connected through the third resistor, the base of the third bipolar transistor connected to the first current path. A second current source can be provided including a fourth bipolar transistor serially connected with a fourth resistor and with the base of the fourth transistor connected to a common terminal of the first resistor and first bipolar transistor. The two field effect transistors can be replaced by two equal resistors or by a single field effect transistor serially connected with a two-collector PNP bipolar transistor which provides the equal currents for the two current paths. The current source is independent of supply voltage and the magnitude of the currents in the two current paths so long as the currents are equal. Accordingly, the circuit is independent of poorly-controlled currents in field effect transistors so long as the currents are equal.

摘要翻译： 启动电路/电流源包括包括串联连接的第一场效应晶体管，第一电阻器，第一双极晶体管和第二电阻器的第一电流路径。 第二电流路径包括第二场效应晶体管，第二双极晶体管和第三电阻器。 第一和第二双极晶体管的基极互连，第二双极晶体管的基极和集电极短路在一起。 第一电流源包括通过第三电阻器串联连接的双极晶体管，第三双极晶体管的基极连接到第一电流路径。 可以提供第二电流源，包括与第四电阻器串联连接的第四双极晶体管，并且第四晶体管的基极连接到第一电阻器和第一双极晶体管的公共端子。 两个场效应晶体管可以由两个相等的电阻器或与两个集电极PNP双极晶体管串联连接的单个场效应晶体管代替，该二极管PNP双极晶体管为两个电流路径提供相等的电流。 只要电流相等，电流源就不依赖于电源电压和两个电流通路中电流的大小。 因此，只要电流相等，电路与场效应晶体管的控制不良电流无关。

公开(公告)号：US4602207A

公开(公告)日：1986-07-22

申请号：US593522

申请日：1984-03-26

申请人： Suk K. Kim ,  Edward J. Zimany, Jr.

发明人： Suk K. Kim ,  Edward J. Zimany, Jr.

IPC分类号： G05F3/20 ,  G05F3/16

CPC分类号： G05F3/20 ,  Y10S323/907

摘要： Current source circuitry consisting of a first n-channel field effect transistor (FET) and voltage generator circuitry coupled to the gate of the first FET. The voltage generator circuitry acts to control the current through the first FET such that it is essentially constant even with power supply, temperature, and many processing variations. The voltage generator circuitry consists of a second FET, a two input differential operational amplifier, a resistor, and an n-p-n transistor if the resistor has a positive temperature coefficient. A negative feedback path using the amplifier and the second FET ensures against current changes in the first and second FETs even if there are changes in one of the power supply levels and/or many semiconductor processing variations.

摘要翻译： 电流源电路由第一n沟道场效应晶体管（FET）和耦合到第一FET的栅极的电压发生器电路组成。 电压发生器电路用于控制通过第一FET的电流，使得即使在电源，温度和许多处理变化的情况下，电压发生器也基本恒定。 如果电阻器具有正温度系数，则电压发生器电路由第二FET，两输入差分运算放大器，电阻器和n-p-n晶体管组成。 使用放大器和第二FET的负反馈路径确保即使在电源电平之一和/或许多半导体处理变化中存在变化，也可以抵抗第一和第二FET中的电流变化。

公开(公告)号：US4546370A

公开(公告)日：1985-10-08

申请号：US674715

申请日：1984-11-21

申请人： Patrick A. Curran

发明人： Patrick A. Curran

IPC分类号： G05F3/20 ,  H01L21/761 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/085 ,  H01L27/088 ,  H01L27/092 ,  H03K19/018 ,  H01L27/02

CPC分类号： G05F3/20 ,  H01L21/761 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/085 ,  H01L27/088 ,  H01L27/0922 ,  H03K19/01831

摘要： Monolithic integration of digital logic circuitry, precision control circuitry, and high voltage interface circuits on the same semiconductor chip is achieved, using various combinations selected from D-MOS, vertical NPN, lateral NPN, PNP, P-MOS, N-MOS, and J-FET components. Cathode driver circuits for a plasma display panel are integrated with this technology. Other applications include automotive and television circuits.

摘要翻译： 使用从D-MOS，垂直NPN，横向NPN，PNP，P-MOS，N-MOS等的各种组合，实现数字逻辑电路，精密控制电路和高压接口电路在同一半导体芯片上的单片集成 J-FET组件。 用于等离子体显示面板的阴极驱动器电路与该技术集成。 其他应用包括汽车和电视电路。

公开(公告)号：US4359680A

公开(公告)日：1982-11-16

申请号：US278905

申请日：1981-05-18

申请人： James R. Hellums ,  Michael B. Terry

发明人： James R. Hellums ,  Michael B. Terry

IPC分类号： G05F3/20 ,  H04M19/08

CPC分类号： H04M19/08 ,  G05F3/20

摘要： A voltage reference circuit (10) produces a reference voltage at output terminals (66, 76). The output reference voltage is substantially independent of variations in the supply voltage, integrated circuit manufacturing processes and temperature. A current reference circuit (30, 32, 34, 36, 38, 56 and 84) produces constant emitter currents in bipolar transistors (40, 70). The V.sub.BE of the bipolar transistors (40, 70) is a stable reference due to the constant emitter current. The bipolar transistors (40, 70) are manufactured with similar geometries to eliminate dependence of the reference voltage upon bipolar processing variations. The V.sub.BE of the bipolar transistor (40) produces a reference current which is provided to the base terminal of bipolar transistor (70). The V.sub.BE of bipolar transistor (70) is further utilized to produce the output reference voltage. A temperature stabilization circuit (58, 82, 86, 90, 92 and 94) is provided with an opposite temperature coefficient from that of the bipolar transistors (40, 70). The temperature stabilization circuit is connected to counteract the influence of the temperature coefficient of the bipolar transistors on the output reference voltage. There is thus established an output reference voltage which is substantially independent of supply voltage, processing and temperature.

摘要翻译： PCT No.PCT / US81 / 00699 Sec。 371日期：1981年5月18日 （e）日期1981年5月18日PCT提交1981年5月18日。电压参考电路（10）在输出端子（66,76）处产生参考电压。 输出参考电压基本上与电源电压，集成电路制造工艺和温度的变化无关。 电流参考电路（30,32,34,36,38,56和84）在双极晶体管（40,70）中产生恒定的发射极电流。 由于恒定的发射极电流，双极晶体管（40,70）的VBE是稳定的基准。 制造具有相似几何形状的双极晶体管（40,70），以消除参考电压对双极性处理变化的依赖性。 双极晶体管（40）的VBE产生提供给双极晶体管（70）的基极的参考电流。 双极晶体管（70）的VBE进一步用于产生输出参考电压。 温度稳定电路（58,82,86,90,92和94）具有与双极晶体管（40,70）相反的温度系数。 连接温度稳定电路以抵消双极晶体管的温度系数对输出参考电压的影响。 因此建立了基本上与供电电压，处理和温度无关的输出参考电压。

公开(公告)号：US4172992A

公开(公告)日：1979-10-30

申请号：US921635

申请日：1978-07-03

申请人： Daniel D. Culmer ,  Ronald W. Russell

发明人： Daniel D. Culmer ,  Ronald W. Russell

IPC分类号： G05F3/20 ,  G05F1/58

CPC分类号： G05F3/20

摘要： A pair of transistors are operated at different current densities so as to develop a differential base to emitter potential. This potential is used as a reference in a negative feedback stabilization circuit which passes a current that is regulated by the potential. The circuit can also regulate the currents flowing in a plurality of additional current sources and sinks connected thereto.

摘要翻译： 一对晶体管以不同的电流密度工作，以形成差分的基极到发射极的电位。 该电位用作通过由电位调节的电流的负反馈稳定电路中的参考。 电路还可以调节在与其连接的多个附加电流源和汇流中流动的电流。

公开(公告)号：US12038773B2

公开(公告)日：2024-07-16

申请号：US17370733

申请日：2021-07-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Mohammad Al-Shyoukh ,  Alex Kalnitsky

IPC分类号： G05F3/20 ,  G05F3/26

CPC分类号： G05F3/20 ,  G05F3/26 ,  G05F3/262

摘要： A voltage reference includes a first current source and a flipped gate transistor coupled in series between an operating voltage node and a negative supply voltage node, a first transistor and a second current source coupled in series between the operating voltage node and the negative supply voltage node, and an output node between the first transistor and the second current source. A gate of the first transistor is coupled to a gate of the flipped gate transistor, the output node is configured to output a reference voltage, the first current source is configured to provide a first current to the flipped gate transistor, the second current source is configured to provide a second current to the first transistor, the second current being less than the first current, and the first transistor has a size greater than a size of the flipped gate transistor.

公开(公告)号：US20240176378A1

公开(公告)日：2024-05-30

申请号：US18518770

申请日：2023-11-24

申请人： LX SEMICON CO., LTD.

发明人： Harim CHOI ,  Kyung Min SHIN ,  Yongsung AHN

IPC分类号： G05F3/20 ,  G05F1/46

CPC分类号： G05F3/20 ,  G05F1/468

摘要： Proposed is a band gap reference circuit under a low supply voltage capable of generating a band gap reference voltage even under a low supply voltage by using a plurality of bias voltages separately generated and a current source using these bias voltages without using a diode connected structure used in the related art while not being affected by limitations in the operating voltage of a bipolar transistor. The band gap reference circuit under a low supply voltage includes a voltage reference main circuit configured to generate a first node voltage and a second node voltage in response to a first bias voltage and a band gap reference voltage, and a transimpedance amplifier configured to generate the band gap reference voltage by amplifying a difference between the first node voltage and the second node voltage using the first bias voltage, a second bias voltage, and a third bias voltage.

公开(公告)号：US20230229185A1

公开(公告)日：2023-07-20

申请号：US17830929

申请日：2022-06-02

申请人： SK hynix Inc.

发明人： Jong Seok JUNG ,  Chan Keun KWON ,  Jong Seok KIM ,  Young Kwan LEE

IPC分类号： G05F3/20 ,  G05F1/567 ,  G01K7/01 ,  H03B5/04

CPC分类号： G05F3/20 ,  G05F1/567 ,  G01K7/01 ,  H03B5/04

摘要： A bandgap reference circuit includes a plurality of current sources including different temperature coefficients, a first trimmer, and a mixer, The first trimmer adjusts current amounts for a plurality of currents, which are individually output from each of the plurality of current sources, to be equal to each other. The mixer adjusts an aggregate ratio and combines the plurality of currents based on the aggregate ratio.