Terahertz wave fast modulator based on coplanar waveguide combining with transistor

    公开(公告)号:US20170279410A1

    公开(公告)日:2017-09-28

    申请号:US15620836

    申请日:2017-06-13

    IPC分类号: H03C1/36 H01P3/08

    CPC分类号: H03C1/36 H01P3/08 H03C7/025

    摘要: A terahertz wave fast modulator based on coplanar waveguide combining with transistor is disclosed. The terahertz waves are inputted through a straight waveguide structure, and then are coupled through a probe structure onto a core part of the present invention, which includes a suspended coplanar waveguide structure and a modulation unit with high electron mobility transistor, wherein the suspended coplanar waveguide structure is formed by three metal wires and a semiconductor substrate; and the modulation unit with high electron mobility transistor is located between adjacent metal transmission strips of the coplanar waveguide structure. Transmission characteristics of the terahertz waves in the coplanar waveguide structure are changed through the switching on/off of the modulation unit, so as to fast modulate the amplitudes and phases of the terahertz waves, and finally the modulated terahertz waves are transmitted through a probe—waveguide structure.

    Modulation circuit and semiconductor device including the same
    99.
    发明授权
    Modulation circuit and semiconductor device including the same 有权
    调制电路和包括其的半导体器件

    公开(公告)号:US09350295B2

    公开(公告)日:2016-05-24

    申请号:US12948225

    申请日:2010-11-17

    申请人: Koichiro Kamata

    发明人: Koichiro Kamata

    IPC分类号: H01L29/786 H03C1/36

    摘要: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.

    摘要翻译: 调制电路包括负载和用作开关的晶体管。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 调制电路包括负载,用作开关的晶体管和二极管。 负载,晶体管和二极管串联连接在天线的端子之间。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器,电容器或电阻器和电容器的组合。

    Digital amplitude modulator and control method for digital amplitude modulator
    100.
    发明授权
    Digital amplitude modulator and control method for digital amplitude modulator 有权
    数字幅度调制器和数字幅度调制器的控制方法

    公开(公告)号:US09184700B2

    公开(公告)日:2015-11-10

    申请号:US14480349

    申请日:2014-09-08

    摘要: According to one embodiment, a digital amplitude modulator includes a power supply unit, a measurement unit, a calculation unit, and a power controller. The power supply unit supplies a power supply voltage to a plurality of power amplifiers. The measurement unit measures the output power and reflection coefficient of a synthesizer. The calculation unit calculates loss power occurring in each power amplifier in an ON state, and reflected power consumed by each power amplifier in the ON state. The power controller controls all the power amplifiers to be in an OFF state, and performs a normal operation, and controls the input voltage of the power supply unit or ON/OFF of the plurality of power amplifiers.

    摘要翻译: 根据一个实施例,数字幅度调制器包括电源单元,测量单元,计算单元和功率控制器。 电源单元向多个功率放大器提供电源电压。 测量单元测量合成器的输出功率和反射系数。 计算单元计算处于ON状态的每个功率放大器中发生的损耗功率,以及每个功率放大器在ON状态下消耗的反射功率。 功率控制器控制所有功率放大器处于关闭状态,并执行正常操作,并控制电源单元的输入电压或多个功率放大器的ON / OFF。