公开(公告)号：US5623182A

公开(公告)日：1997-04-22

申请号：US630729

申请日：1996-04-10

Applicant: Kazuyoshi Okano ,  Takehiro Iida ,  Tetsuo Murata ,  Nobuharu Suzuki ,  Hiroaki Washiyama ,  Yasushi Watase

Inventor： Kazuyoshi Okano ,  Takehiro Iida ,  Tetsuo Murata ,  Nobuharu Suzuki ,  Hiroaki Washiyama ,  Yasushi Watase

IPC: H01J1/34 ,  H01J40/06 ,  H01J43/04 ,  H01J43/08

CPC classification number: H01J1/34

Abstract: This invention relates to an improvement of a reflection mode alkali photocathode which relies on controlling a deposition weight of antimony. The reflection mode alkali photocathode according to this invention includes a thin layer of antimony directly deposited on a base substrate and activated by alkali metals. The thin film of antimony is deposited in a thickness of below 100 .mu.g/cm.sup.2. This reflection mode photocathode is suitably usable in photomultipliers. As the base substrate, nickel, aluminium and stainless, etc. are used. As the alkali metals, cesium, potassium, sodium and rubidium are usable.

Abstract translation: 本发明涉及依赖于控制锑沉积重量的反射模式碱光电阴极的改进。 根据本发明的反射模式碱性光电阴极包括直接沉积在基底上并由碱金属活化的锑薄层。 锑薄膜的沉积厚度低于100μg/ cm2。 该反射模式光电阴极适用于光电倍增管。 作为基底，使用镍，铝和不锈钢等。 作为碱金属，可以使用铯，钾，钠和铷。

公开(公告)号：US5557166A

公开(公告)日：1996-09-17

申请号：US457744

申请日：1995-06-01

Applicant: Yasushi Watase ,  Hiroaki Washiyama ,  Toshio Ikuma

Inventor： Yasushi Watase ,  Hiroaki Washiyama ,  Toshio Ikuma

IPC: H01J40/06 ,  H01J1/34 ,  H01J43/06 ,  H01J43/08 ,  H01J40/16

CPC classification number: H01J43/06 ,  H01J1/34 ,  H01J2201/3426

Abstract: The photocathode according to this invention is characterized in that an aluminium thin film is formed on a substrate, and then an antimony thin layer is deposited directly on the aluminium thin film and is activated by an alkali metal. It is especially preferable that the antimony thin layer is deposited in a thickness of 15 .mu.g/cm.sup.2 to 45 .mu.g/cm.sup.2 and is activated by an alkali metal. Such reflection-type photocathode is applicable to photomultipliers. Among functions which are considered to be done by the Al film. which is in direct contact with the Sb layer, a first one is to prevent the alloying between the Sb layer and the substrate (e.g., Ni), and a second one is to augment a reflectance of light to be detected.

Abstract translation: 根据本发明的光电阴极的特征在于在基板上形成铝薄膜，然后将锑薄层直接沉积在铝薄膜上并被碱金属活化。 特别优选的是，锑薄层以15g / cm 2至45g / cm 2的厚度沉积，并被碱金属活化。 这种反射型光电阴极适用于光电倍增管。 被认为是由Al电影完成的功能。 其与Sb层直接接触，第一种是防止Sb层和衬底（例如Ni）之间的合金化，第二种是增加要检测的光的反射率。

公开(公告)号：US4907051A

公开(公告)日：1990-03-06

申请号：US193502

申请日：1988-05-12

Applicant: Shaw Ehara

Inventor： Shaw Ehara

IPC: H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01L31/0248

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photocathode with high photoelectric conversion ratio over an extended wavelength range of incident light has a hetero junction formed between thin films of a p-type amorphous silicon alloy having energy gap matching the energy of the incident light and an n-type semiconductor with small work function or large coefficient of secondary electron emission.

Abstract translation: 在入射光的扩展波长范围内具有高光电转换比的光电阴极具有在具有与入射光的能量匹配的能隙的p型非晶硅合金的薄膜和小工作的n型半导体之间形成的异质结 二次电子发射功能或大系数。

公开(公告)号：US4698544A

公开(公告)日：1987-10-06

申请号：US824692

申请日：1986-01-30

Applicant: Katsuyuki Kinoshita ,  Yoshiji Suzuki

Inventor： Katsuyuki Kinoshita ,  Yoshiji Suzuki

IPC: H01J9/12 ,  H01J9/233 ,  H01J31/50 ,  H01J29/36 ,  H01J40/06 ,  H01J43/08

CPC classification number: H01J9/125 ,  H01J31/50 ,  H01J2201/32 ,  H01J2231/50015 ,  H01J2231/50063 ,  H01J2231/5016

Abstract: An imaging tube for amplifying and observing a diminished light image and a streaking tube for analyzing the light intensity distributions of light sources with elapsing of time. In order to avoid adhesion of alkali metal to the micro-channel-plate in fabrication of the imaging tube and to avoid adhesion of alkali metal to the deflection electrode in the streaking tube, a separation wall and a lid movable on the separation wall are used.

Abstract translation: 一种用于放大和观察减少的光图像的成像管和用于分析随时间的光源的光强度分布的条纹管。 为了避免在制造成像管时将碱金属粘附到微通道板上，并且为了避免碱性金属与条纹条中的偏转电极粘附，可以使用分隔壁和在分隔壁上移动的盖子 。

公开(公告)号：US4656392A

公开(公告)日：1987-04-07

申请号：US546478

申请日：1983-10-28

Applicant: Richard D. Faulkner ,  Robert E. McHose

Inventor： Richard D. Faulkner ,  Robert E. McHose

IPC: H01J40/02 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01J43/04 ,  H01J43/08 ,  H01J43/18

CPC classification number: H01J43/04

Abstract: An electron discharge device, such as a photomultiplier tube, has an evacuated envelope with an alkali-antimonide photoemissive cathode therein. A thermionic emission-reduction coating is disposed within the envelope. The coating alloys with the constituents of the photoemissive cathode to reduce thermionic emission. The thermionic emission reduction coating is formed preferably of indium; however, indium oxide may also be used.

Abstract translation: 诸如光电倍增管的电子放电装置具有其中具有碱 - 锑化物光发射阴极的抽真空的外壳。 热电子发射减少涂层设置在封套内。 具有光发射阴极成分的涂层合金以减少热电子发射。 热离子减少涂层优选由铟形成; 然而，也可以使用氧化铟。

公开(公告)号：US4184098A

公开(公告)日：1980-01-15

申请号：US878031

申请日：1978-02-15

Applicant: John J. Morales

Inventor： John J. Morales

IPC: H01J43/22 ,  H01J39/14 ,  H01J43/08

CPC classification number: H01J43/22

Abstract: A dynode for use as a stage of a plural stage photomultiplier tube in which the dynode is formed of a plurality of axially and planarly aligned conical frustums.

Abstract translation: 用作多级光电倍增管的级的倍增极，其中倍增极由多个轴向和平面对准的锥形截头锥体形成。

公开(公告)号：US4038576A

公开(公告)日：1977-07-26

申请号：US652547

申请日：1976-01-26

Applicant: Jean Philippe Hallais ,  Michel Jean-Claude Monnier ,  Jean-Claude Richard

Inventor： Jean Philippe Hallais ,  Michel Jean-Claude Monnier ,  Jean-Claude Richard

IPC: H01J40/02 ,  H01J1/34 ,  H01J9/12 ,  H01J29/38 ,  H01J29/86 ,  H01J43/08 ,  H01J39/02 ,  H01J31/38

CPC classification number: H01J29/38 ,  H01J29/863 ,  H01J9/12

Abstract: A window for an electron tube formed by a semiconductor device having a support of monocrystalline oxide, by a connection layer formed by a barium- or calcium-boroaluminate, by at least one passivating layer, and by an active layer having a constant composition and formed by a semiconductor material of the p-conductivity type.

公开(公告)号：US3931633A

公开(公告)日：1976-01-06

申请号：US555604

申请日：1975-03-05

Applicant: John Martin Shannon ,  John Ernest Ralph

Inventor： John Martin Shannon ,  John Ernest Ralph

IPC: H01J40/02 ,  H01J1/34 ,  H01J43/08 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L31/112 ,  H01L31/153 ,  H01L27/14

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1126 ,  H01J2201/3423

Abstract: A semiconductor photocathode is described in which the electron emission is obtained from a P-type semiconductor into which free electrons are injected from the source or drain of an FET whose channel is normally blocked. Incident photons absorbed in the channel region unblock the FET causing electron emission. Preferably, the device comprises an imaging array of FET's and associated electron emitters.

Abstract translation: 描述了一种半导体光电阴极，其中从其通道正常被阻挡的FET的源极或漏极注入自由电子的P型半导体获得电子发射。 在通道区域中吸收的入射光子阻止FET引起电子发射。 优选地，该器件包括FET和相关电子发射器的成像阵列。

公开(公告)号：US3515872A

公开(公告)日：1970-06-02

申请号：US3515872D

申请日：1968-04-29

Applicant: PHILIPS CORP

Inventor： PATZELT RUPERT ,  HALLING HORST

IPC: G01T1/20 ,  G01T1/208 ,  H01J31/50 ,  H01J43/08 ,  G01T1/204

CPC classification number: B82Y10/00 ,  G01T1/20 ,  G01T1/208 ,  H01J31/501 ,  H01J43/08

公开(公告)号：US3350594A

公开(公告)日：1967-10-31

申请号：US38566464

申请日：1964-07-28

Applicant: EMI LTD

Inventor： PETER DAVIS GORDON ,  ALFRED BENBOW HENRY

IPC: H01J29/18 ,  H01J29/28 ,  H01J31/50 ,  H01J43/08

CPC classification number: H01J43/08 ,  H01J29/18 ,  H01J29/28 ,  H01J31/50 ,  H01J2231/50063