公开(公告)号：US3947707A

公开(公告)日：1976-03-30

申请号：US478609

申请日：1974-06-12

Applicant: John Martin Shannon ,  John Ernest Ralph ,  Pieter Schagen

Inventor： John Martin Shannon ,  John Ernest Ralph ,  Pieter Schagen

IPC: H01J29/45 ,  G03G5/024 ,  G03G5/087 ,  G11C16/04 ,  H01J1/34 ,  H01J29/36 ,  H01L27/146 ,  H01L29/00 ,  H01L31/0264 ,  H01L31/0384 ,  H01L31/112 ,  H01L31/14 ,  H01L31/153 ,  H01L31/00

CPC classification number: H01L31/153 ,  G03G5/024 ,  G03G5/087 ,  G11C16/0466 ,  H01J29/36 ,  H01L27/14679 ,  H01L29/00 ,  H01L31/0384 ,  H01L31/1126 ,  H01L31/145

Abstract: An electronic solid state device comprising a layer in which the electrical conductivity is controlled by a plurality of isolated discrete regions distributed within the bulk of the layer and forming potential barriers with semi conductor material of the layer surrounding the discrete regions. Electrical charge is stored in the layer by the discrete regions and the charging is obtained by the application of a potential pulse across the discrete regions. In a preferred operational mode the charging potential is applied such that current conduction paths in the layer are blocked by the depletion regions associated with the potential barrier for applied interrogation potentials across the regions of substantially smaller magnitude than the charging pulse. The device may consist of an imaging device having high charges gain and particular embodiments described consist of an image intensifier, an imaging active photocathode and a target plate of a vidicon camera tube.

Abstract translation: 一种电子固态器件，其包括其中电导率由分布在该层的主体内的多个隔离的离散区域控制并且形成具有包围该离散区域的该层的半导体材料的势垒的层。 电荷通过离散区域存储在层中，并且通过跨越离散区域施加电位脉冲获得充电。 在优选的操作模式中，施加充电电位，使得层中的电流传导路径被阻挡在与充电脉冲基本上更小的区域上的施加的询问电位的与势垒相关联的耗尽区。 该装置可以由具有高电荷增益的成像装置组成，并且描述的特定实施例由摄像机相机管的图像增强器，成像活性光电阴极和靶板组成。

公开(公告)号：US3931633A

公开(公告)日：1976-01-06

申请号：US555604

申请日：1975-03-05

Applicant: John Martin Shannon ,  John Ernest Ralph

Inventor： John Martin Shannon ,  John Ernest Ralph

IPC: H01J40/02 ,  H01J1/34 ,  H01J43/08 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L31/112 ,  H01L31/153 ,  H01L27/14

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1126 ,  H01J2201/3423

Abstract: A semiconductor photocathode is described in which the electron emission is obtained from a P-type semiconductor into which free electrons are injected from the source or drain of an FET whose channel is normally blocked. Incident photons absorbed in the channel region unblock the FET causing electron emission. Preferably, the device comprises an imaging array of FET's and associated electron emitters.

Abstract translation: 描述了一种半导体光电阴极，其中从其通道正常被阻挡的FET的源极或漏极注入自由电子的P型半导体获得电子发射。 在通道区域中吸收的入射光子阻止FET引起电子发射。 优选地，该器件包括FET和相关电子发射器的成像阵列。

公开(公告)号：US4107724A

公开(公告)日：1978-08-15

申请号：US810666

申请日：1977-06-28

Applicant: John Ernest Ralph

Inventor： John Ernest Ralph

IPC: H01L31/0232 ,  H01L31/0368 ,  H01L31/0384 ,  H01L31/113 ,  H01L27/14 ,  H01L29/80 ,  H01L31/00

CPC classification number: H01L31/1136 ,  H01L31/02322 ,  H01L31/0368 ,  H01L31/0384 ,  Y02E10/50

Abstract: An electronic solid state device comprising an inhomogeneous body in which grains of semiconductor material are present. The contact between adjoining grains is such that in the interface regions there is continuity between the bulk material of the adjoining grains and the dominant current conduction paths in the body lie within the grains via said grain to grain contacts. At the surfaces of the grains adjoining said interface regions rectifying barrier forming means are provided to enable control of the said current paths by surface field effect depletion in the interface regions. Said means can be opposite conductivity type surface layers at or on the grains. In other devices said means are formed by adsorbed gas atoms, ions or molecules. The said control may be employed to yield photoconductive layers with controllable gain and speed of response, said layers being used, for example, in solid state imaging devices.

Abstract translation: 一种电子固态器件，包括其中存在半导体材料晶粒的不均匀体。 邻接晶粒之间的接触使得在界面区域中，邻接晶粒的块体材料和主体中的主导电流传导路径之间具有连续性，其通过所述晶粒到晶粒接触位于晶粒内。 在邻接所述界面区域的晶粒的表面处提供整流势垒形成装置，以便能够通过界面区域中的表面场效应消耗来控制所述电流路径。 所述装置可以与晶粒上或其上的导电型表面层相反。 在其他装置中，所述装置由吸附的气体原子，离子或分子形成。 可以使用所述控制来产生具有可控增益和响应速度的光电导层，所述层例如用在固态成像装置中。