公开(公告)号：US20220085568A1

公开(公告)日：2022-03-17

申请号：US17475571

申请日：2021-09-15

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Naoki ITABASHI ,  Hiroshi Hara

IPC: H01S5/02315 ,  H01S5/024

Abstract: A light semiconductor device according to an embodiment includes: a carrier having a first pattern for transmitting a signal and a second pattern having a reference potential constituting a coplanar line together with the first pattern on a front surface; a modulator having a first electrode provided on a back surface and connected to the second pattern of the carrier and a second electrode provided on a front surface and connected to the first pattern of the carrier; and a first connection portion having one end connected to the second pattern of the carrier and the other end connected to the first electrode of the modulator. The front surface of the modulator and a front surface of the carrier face each other.

公开(公告)号：US11264780B2

公开(公告)日：2022-03-01

申请号：US16239083

申请日：2019-01-03

Applicant: OEpic SEMICONDUCTORS, INC.

Inventor： Yi-Ching Pao

IPC: H01S5/0234 ,  H01S5/042 ,  H01S5/42 ,  H01S5/323 ,  H01S5/024 ,  H01S5/183 ,  H01S5/0237 ,  H01S5/026 ,  H01S5/02345

Abstract: A flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package has a VCSEL pillar array. A first metal contact is formed over a top section of each pillar of the VCSEL pillar array. A second metal contact is formed on a back surface of the VCEL pillar array. An opening is formed in the second metal contact and aligned with the pillars of the VCSEL pillar array. Solder tip is applied on each pillar of the VCSEL pillar array to flip chip mount the VCSEL pillar array.

公开(公告)号：US11245246B2

公开(公告)日：2022-02-08

申请号：US16308985

申请日：2017-05-31

Applicant: OSRAM OLED GmbH

Inventor： Wolfgang Reill

IPC: H01S5/042 ,  H01S5/0237 ,  H01S5/065 ,  H01S5/023 ,  H01S5/0233 ,  H01S5/0234 ,  H01S5/0235 ,  H01S5/024

Abstract: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.

公开(公告)号：US11233374B2

公开(公告)日：2022-01-25

申请号：US16152661

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho Cha ,  Seong-Gu Kim ,  Dong-Jae Shin ,  Yong-Hwack Shin ,  Kyoung-Ho Ha

IPC: H01S5/02 ,  H01S5/10 ,  H01S5/20 ,  H01S5/024 ,  H01S5/026 ,  H01S5/323 ,  H01S5/042 ,  H01S5/40 ,  H01S5/32 ,  H01S5/343 ,  H01S5/34 ,  H01S5/125 ,  H01S5/227

Abstract: A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.

公开(公告)号：US20210410322A1

公开(公告)日：2021-12-30

申请号：US17277202

申请日：2019-09-18

Applicant: NEC Corporation

Inventor： Shingo KAMEDA

IPC: H05K7/20 ,  H01S5/024 ,  G02B6/44 ,  H04B10/29

Abstract: [Problem] To suppress the number of man-hours required to handle design changes accompanying a change in heat generation in an internal unit stored inside an electric device.
[Solution] The present invention includes: at least one internal unit, which is a heat generating body and has a prescribed cross-sectional external shape; at least one heat conduction unit, which is a good conductor of heat and has a prescribed cross-sectional external shape; and a device housing in which two or more of the internal unit and the heat conduction unit can be stored in a state of being adjacent to each other with the prescribed cross-sectional external shapes thereof overlapping each other, the device housing thermally connecting to the stored internal unit or the stored heat conduction unit.

公开(公告)号：US20210408759A1

公开(公告)日：2021-12-30

申请号：US17377832

申请日：2021-07-16

Applicant: Bryan LOCHMAN ,  Matthew SAUTER ,  Bien CHANN ,  Michael DEUTSCH

Inventor： Bryan LOCHMAN ,  Matthew SAUTER ,  Bien CHANN ,  Michael DEUTSCH

IPC: H01S5/024 ,  H01S5/40

Abstract: In various embodiments, a laser emitter such as a diode bar is cooled during operation via jets of cooling fluid formed by ports in a cooler on which the laser emitter is positioned. The jets strike an impingement surface of the cooler that is thermally coupled to the laser emitter but prevents direct contact between the cooling fluid and the laser emitter itself.

公开(公告)号：US20210391695A1

公开(公告)日：2021-12-16

申请号：US17292197

申请日：2019-11-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald König ,  Bernhard Stojetz ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/343

Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element's connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than IΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.

公开(公告)号：US20210391687A1

公开(公告)日：2021-12-16

申请号：US17281608

申请日：2019-07-17

Applicant: KYOCERA Corporation

Inventor： Takafumi YAMAGUCHI ,  Toshifumi HIGASHI ,  Youji FURUKUBO

IPC: H01S5/024 ,  H01S5/023 ,  H01S5/02208

Abstract: A substrate for mounting an electronic component according to an aspect of an embodiment includes a base that is a plate-shaped body, where a first surface of the base is sloped relative to a second surface that is opposed to the first surface, and when the base is bisected into a lower part and a higher part in a slope direction thereof, a thermal conductivity of the lower part is higher than a thermal conductivity of the higher part.

公开(公告)号：US20210381736A1

公开(公告)日：2021-12-09

申请号：US16893234

申请日：2020-06-04

Applicant: Rocky Research

Inventor： Uwe Rockenfeller ,  Kaveh Khalili

IPC: F25B49/02 ,  F41H13/00 ,  F25B1/10 ,  H01S5/024 ,  H05K7/20

Abstract: Disclosed are systems and methods of heating and cooling a laser system by providing a vapor compression system having a plurality of compressors. A control system controls the activity of each compressor and activates and manages the speed of each compressor to efficiently provide cooling and heating of the laser system.

公开(公告)号：US11177626B2

公开(公告)日：2021-11-16

申请号：US15080516

申请日：2016-03-24

Applicant: Lawrence Livermore National Security, LLC

Inventor： Susant Patra ,  Robert J. Deri ,  John W. Elmer

IPC: H01S5/024 ,  H01S5/02 ,  H01S5/323 ,  H01L23/522 ,  H01L23/532 ,  H01S5/40

Abstract: A pyrolytic graphite (PG) substrate and laser diode package includes a substrate body having a PG crystalline structure with a basal plane oriented at a pre-determined orientation angle as measured from a longitudinal axis of a heat generating material, such as a laser diode, mounted on a surface of the PG substrate, so that a coefficient of thermal expansion (CTE) of the PG substrate is substantially matched with a CTE of the material.