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公开(公告)号：US20220020707A1
公开(公告)日：2022-01-20
申请号：US17294954
申请日：2019-11-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matthias HIEN , Matthias GOLDBACH
Abstract: An optoelectronic semiconductor component includes a semiconductor body having a main emission surface and an active region arranged to emit electromagnetic radiation. The optoelectronic semiconductor component also includes a receiving element arranged on the side of the semiconductor body opposite to the main emission surface. The optoelectronic semiconductor component also includes a radiation-transmissive molding compound. The radiation-transmissive molding compound completely surrounds the semiconductor body and the receiving element. A receiver frequency is assigned to the receiving element. The receiving element is configured to extract energy for operating the active region from an alternating electromagnetic field.
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公开(公告)号：US11226082B1
公开(公告)日：2022-01-18
申请号：US16992611
申请日：2020-08-13
Applicant: OSRAM Opto Semiconductors GmbH , The Research Foundation for State University of New York
Inventor： Alan Lenef , David Klotzkin , Xin Wen
IPC: F21V9/32 , H01S5/343 , F21Y115/30
Abstract: An optoelectronic light source includes a semiconductor laser configured to produce polarized primary radiation, a converter material configured to absorb at least part of the primary radiation and convert the primary radiation into a secondary radiation of an increased wavelength, a planar multi-layered mirror located between the semiconductor laser and the converter material, the multi-layered mirror configured to transmit the primary radiation and reflect the secondary radiation, and an optical element provided between the semiconductor laser and the multi-layered mirror, wherein the optical element is configured such that the primary radiation coming from the semiconductor laser impinges on the multi-layered mirror at a Brewster angle.
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公开(公告)号：US20210391695A1
公开(公告)日：2021-12-16
申请号：US17292197
申请日：2019-11-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element's connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than IΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.
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公开(公告)号：US11199445B1
公开(公告)日：2021-12-14
申请号：US17066489
申请日：2020-10-09
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Hoa Vu
IPC: G01J1/44 , H01L31/02 , G01S7/4861
Abstract: A device for cancelling undesired fractions in a detected signal may include a first region having an output node and including a light sensitive sensor configured to detect a first signal and an analogue to digital converter coupled to the output node. A second region may be switchably coupled to the first region based on a first control signal to the first region. The second region may include a storage device configured to store a signal based on the detection of the first signal. The second region may include an output node coupled to the sensor. The second may be configured to provide a compensation signal based on the stored signal to the light sensitive sensor during detection of a second signal.
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公开(公告)号：US20210384170A1
公开(公告)日：2021-12-09
申请号：US17289114
申请日：2019-11-08
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Thomas SCHWARZ , Frank SINGER
IPC: H01L25/075 , H01L33/58 , H01L33/10 , H01L33/62
Abstract: A multi-pixel display device with an integrated circuit, a plurality of light-emitting semiconductor chips disposed on the integrated circuit, a display area having a plurality of pixels, each of the light-emitting semiconductor chips being associated with one of the pixels, a light-directing element disposed between the plurality of light-emitting semiconductor chips and the display area and adapted to direct the light of each light-emitting semiconductor chip from the plurality of light-emitting semiconductor chips to its associated pixel.
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Patent Agency Ranking
公开(公告)号：US11196231B2
公开(公告)日：2021-12-07
申请号：US16500078
申请日：2018-04-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Sebastian Taeger
Abstract: A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment a semiconductor laser diode includes an epitaxially produced semiconductor layer sequence comprising at least one active layer and a gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence.
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107.发明申请公开(公告)号：US20210376199A1
公开(公告)日：2021-12-02
申请号：US17285905
申请日：2019-10-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Günter Spath , Daniel Leisen , Simon D. Jerebic , Matthias Kiessling
Abstract: In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element.
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公开(公告)号：US11185243B2
公开(公告)日：2021-11-30
申请号：US16303719
申请日：2017-05-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Tim Böscke , Stephan Haslbeck
IPC: A61B5/1455 , A61B5/024
Abstract: A sensor device includes a first light emitter that emits light with a wavelength from a first spectral range, a second light emitter that emits light with a wavelength from a second spectral range, a first light detector configured to detect light with a wavelength from the first spectral range, but not to respond to light with a wavelength from the second spectral range, and a second light detector configured to detect light with a wavelength from the first spectral range and light with a wavelength from the second spectral range, wherein a distance between the first light emitter and the first light detector is smaller than a distance between the second light emitter and the second light detector.
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公开(公告)号：US20210358792A1
公开(公告)日：2021-11-18
申请号：US17288430
申请日：2019-10-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ralph Wagner
IPC: H01L21/683 , H01L33/00 , H01L33/22 , H01L33/32 , B32B43/00
Abstract: In an embodiment a method includes providing a growth substrate with a plurality of semiconductor bodies for the semiconductor devices, wherein each semiconductor body comprises electrical contact structures and a separation layer arranged towards the growth substrate, arranging a rigid first auxiliary carrier on a side of the semiconductor bodies facing away from the growth substrate, wherein the first auxiliary carrier comprises a first detachment layer, detaching the growth substrate by laser radiation, wherein the laser radiation is absorbed in the separation layer, arranging a rigid second auxiliary carrier on a side of the semiconductor bodies facing away from the first auxiliary carrier, wherein the second auxiliary carrier comprise a second detachment layer, detaching the first auxiliary carrier by laser radiation, wherein the laser radiation is absorbed in the first detachment layer and the separation layer still extending continuously over the growth substrate while detaching and mechanically and electrically arranging the semiconductor bodies on at least one permanent carrier.
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公开(公告)号：US20210351323A1
公开(公告)日：2021-11-11
申请号：US17281988
申请日：2019-09-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Lutz HOEPPEL
Abstract: A component may have a semiconductor body, a first electrode, and a second electrode. The first electrode and the second electrode may be configured for electrically contacting a first semiconductor layer and a second semiconductor, respectively, and may have a first distribution track and a second distribution track for uniformly distributing current in the first semiconductor layer and the second semiconductor layer, respectively. The first distribution track and the second distribution track may be arranged regionally one above the other on the same side of the semiconductor body, overlap each other regionally in top view, and cover the semiconductor body only in certain places. Furthermore, the first distribution track may extend in places throughout the second semiconductor layer and the active zone to the first semiconductor layer. The active zone may be removed only in places in overlapping regions of the semiconductor body and the first distribution track.
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