公开(公告)号：US10014179B2

公开(公告)日：2018-07-03

申请号：US15019587

申请日：2016-02-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Rong Tao ,  Tae Hong Ha ,  Xianmin Tang ,  Joung Joo Lee

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/28556 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53257

Abstract: Methods for processing a substrate include: (a) depositing a cobalt layer to a first thickness within a first plurality of features and a second plurality of features formed in a substrate, wherein each of the first plurality of features and each of the second plurality of features comprises an opening, and wherein a width of the openings of the first plurality of features is less than a width of the openings of the second plurality of features; and (b) heating the substrate to a first temperature to fill the first plurality of features with cobalt material while simultaneously depositing a fill material on the substrate to fill the second plurality of features.

公开(公告)号：US09953813B2

公开(公告)日：2018-04-24

申请号：US14707825

申请日：2015-05-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Xianmin Tang ,  Joung Joo Lee ,  Guojun Liu

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  H01L21/02

CPC classification number: H01J37/3447 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J2237/3322 ,  H01L21/02104

Abstract: Methods and apparatus for improved metal ion filtering are provided herein. In some embodiments, a substrate processing apparatus includes: a chamber body and a chamber lid disposed on the chamber body defining a processing region within the chamber body beneath the lid; a collimator disposed in the processing region; a power source coupled to the collimator; and a first set of magnets disposed around the chamber body above the collimator and a second set of magnets disposed around the chamber body and below the collimator that together create a guidance magnetic field that is substantially orthogonal to the collimator.

公开(公告)号：US09162930B2

公开(公告)日：2015-10-20

申请号：US13867606

申请日：2013-04-22

Applicant: Applied Materials, Inc.

Inventor： Yong Cao ,  Kazuya Daito ,  Rajkumar Jakkaraju ,  Xianmin Tang

IPC: C23C14/34 ,  C04B35/581 ,  C23C14/06 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/02

CPC classification number: C04B35/581 ,  C23C14/0617 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/0332 ,  H01L21/32139

Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.

Abstract translation: 本发明一般涉及掺杂氮化铝硬掩模和制造掺杂氮化铝硬掩模的方法。 通过在形成氮化铝硬掩模时添加少量的掺杂剂，例如氧，可以显着降低硬掩模的湿蚀刻速率。 另外，由于掺杂剂的存在，与未掺杂的氮化铝硬掩模相比，硬掩模的晶粒尺寸减小。 减小的晶粒尺寸导致在硬掩模中更平滑的特征，这导致在利用硬掩模时对底层进行更精确的蚀刻。