PVD ALN film with oxygen doping for a low etch rate hardmask film
    103.
    发明授权
    PVD ALN film with oxygen doping for a low etch rate hardmask film 有权
    具有氧掺杂的PVD ALN膜用于低蚀刻速率的硬掩模膜

    公开(公告)号:US09162930B2

    公开(公告)日:2015-10-20

    申请号:US13867606

    申请日:2013-04-22

    Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.

    Abstract translation: 本发明一般涉及掺杂氮化铝硬掩模和制造掺杂氮化铝硬掩模的方法。 通过在形成氮化铝硬掩模时添加少量的掺杂剂,例如氧,可以显着降低硬掩模的湿蚀刻速率。 另外,由于掺杂剂的存在,与未掺杂的氮化铝硬掩模相比,硬掩模的晶粒尺寸减小。 减小的晶粒尺寸导致在硬掩模中更平滑的特征,这导致在利用硬掩模时对底层进行更精确的蚀刻。

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