公开(公告)号：US06468639B2

公开(公告)日：2002-10-22

申请号：US09295883

申请日：1999-04-21

申请人： Seiji Ishikawa ,  Shigeru Yamamoto ,  Yoshiaki Watanabe

发明人： Seiji Ishikawa ,  Shigeru Yamamoto ,  Yoshiaki Watanabe

IPC分类号： B32B300

CPC分类号： H01L23/3185 ,  C09D179/08 ,  C09D183/10 ,  H01L23/293 ,  H01L2224/50 ,  Y10T428/24917 ,  Y10T428/251 ,  Y10T428/256 ,  Y10T428/258 ,  Y10T428/259 ,  Y10T428/31663 ,  Y10T428/31681 ,  Y10T428/31721 ,  C08L63/00 ,  C08L2666/14 ,  C08L2666/54

摘要： A single-application polyimidosiloxane coating material comprising a uniformly mixed solution composition of a polyimidosiloxane with an epoxy resin-reactive group in the molecule, an epoxy resin and a fine inorganic filler in a solvent. The coating material has satisfactory storage stability and printing properties, and its cured films also have satisfactory properties and allow single-application printing.

摘要翻译： 在分子中包含聚酰亚胺硅氧烷与环氧树脂反应性基团的均匀混合溶液组合物，溶剂中的环氧树脂和细无机填料的单应用聚亚硅氧烷涂料。 涂料具有令人满意的储存稳定性和印刷性能，其固化膜也具有令人满意的性能，并允许单次印刷。

公开(公告)号：US06348360B1

公开(公告)日：2002-02-19

申请号：US09528156

申请日：2000-03-17

申请人： Nong Chen ,  Kiyoshi Takei ,  Yoshiaki Watanabe ,  Kiyofumi Chikuma

发明人： Nong Chen ,  Kiyoshi Takei ,  Yoshiaki Watanabe ,  Kiyofumi Chikuma

IPC分类号： H01L2100

CPC分类号： H01S5/0207 ,  H01S5/02284 ,  H01S5/1085 ,  H01S2301/176

摘要： A method for producing a semiconductor laser module is provided which enables simplifying the production process by eliminating the process of positioning the laser light emitting portion on the substrate, as well as enabling positioning an optical fiber on an appropriate position without aligning the optical fiber with the laser light emitting portion. A semiconductor laser module is fabricated through a process including a substrate preparation step for preparing a substrate including an active layer between cladding layers; a supporting groove portion formation step for forming a supporting groove portion to support an optical fiber on the substrate; and an electrode formation step for forming an electrode on a substrate surface of an opposing portion which faces the supporting groove portion.

摘要翻译： 提供一种制造半导体激光器模块的方法，其通过消除将激光发射部分定位在基板上的过程以及使光纤定位在适当位置而不使光纤与 激光发光部。 通过包括用于制备包括在包层之间的有源层的衬底的衬底制备步骤的工艺来制造半导体激光器模块; 支撑槽部形成工序，形成用于将基板上的光纤支撑的支撑槽部; 以及电极形成步骤，用于在与支撑槽部分相对的相对部分的基板表面上形成电极。

公开(公告)号：US06271760B1

公开(公告)日：2001-08-07

申请号：US09269993

申请日：1999-04-05

申请人： Yoshiaki Watanabe ,  Hiroyuki Ogino ,  Masahiro Inoue ,  Kenji Yoshinaga ,  Takashi Iwasa

发明人： Yoshiaki Watanabe ,  Hiroyuki Ogino ,  Masahiro Inoue ,  Kenji Yoshinaga ,  Takashi Iwasa

IPC分类号： G08B2100

CPC分类号： B60N2/002

摘要： A human body detector for a seat which does not deteriorate comfort of sitting even when it is disposed on the seat, has a high sensitivity and can be easily fitted to the seat. Vibration detection means (5) is disposed in such a manner that even when a person is seated, the means (5) comes into contact with the bottom surface of a seat pad (16) of a seat (19) and accordingly the person does not feel the means (5). According to this construction, the human body does not easily feel the means (5) by the provision of the seat pad (16), the existence of the vibration detection means (5) is hardly felt even when the hardness and the shape are changed, and various measures for improving the sensitivity of the vibration detection means (5) can be taken. The vibration detection means (5) may be merely bonded to the seat pad (16) or may be fixed to a seat spring (17) or a seat frame (18), and can be fitted more easily to the seat (19) than when it is disposed below a surface cloth (15) of the seat (19).

摘要翻译： 即使设置在座椅上也不会使坐着的舒适度降低的座椅的人体检测器具有高灵敏度并且可以容易地安装到座椅上。 振动检测装置（5）以这样的方式设置，即使当人坐下时，装置（5）与座椅（19）的座垫（16）的底表面接触，因此人 没有感觉的手段（5）。 根据这种结构，人体通过设置座垫（16）不容易感觉到装置（5），即使硬度和形状发生变化，也难以感觉到振动检测装置（5）的存在 ，并且可以采取用于提高振动检测装置（5）的灵敏度的各种措施。 振动检测装置（5）可以仅仅与座垫（16）接合或者可以固定在座椅弹簧（17）或座椅框架（18）上，并且可以更容易地安装在座椅（19）上 当其设置在座椅（19）的表面布（15）的下方时。

公开(公告)号：US5404128A

公开(公告)日：1995-04-04

申请号：US30531

申请日：1993-03-12

申请人： Hiroyuki Ogino ,  Yoshiaki Watanabe ,  Fumikazu Shiba ,  Masayoshi Miki ,  Shunichi Nagamoto

发明人： Hiroyuki Ogino ,  Yoshiaki Watanabe ,  Fumikazu Shiba ,  Masayoshi Miki ,  Shunichi Nagamoto

IPC分类号： B60R21/01 ,  B60R21/015 ,  B60R22/48 ,  G08B21/00

CPC分类号： B60R22/48 ,  B60R21/01512 ,  B60R21/01542 ,  B60R2022/4816 ,  B60R2022/4858 ,  B60R2022/4866

摘要： A safety control apparatus positively discriminates between an object and a person through the detection of subtle physical movement corresponding to the heart activity and the breathing unique to the life activity of the human body from a output signal of a vibration sensor disposed on a seat so as to accurately decide whether or not a person is present. The maintenance of the safe operation of the moving vehicle can be realized. The starting of the moving vehicle is inhibited if the reserved seat is determined to be unoccupied in accordance with the decision result. In the case where the person is present, the moving of the vehicle is not started before the engagement of the seat belt has been detected.

摘要翻译： 安全控制装置通过从设置在座椅上的振动传感器的输出信号通过检测对应于人体活动的人体活动特有的呼吸的微妙物理运动和人体生命活动的呼吸来正确地区分对象和人物，以便 准确地确定一个人是否存在。 可以实现对移动车辆的安全运行的维护。 如果根据决策结果确定预留座位未被占用，则移动车辆的起动被禁止。 在该人存在的情况下，在检测到安全带的接合之前车辆的移动不开始。

公开(公告)号：US5173687A

公开(公告)日：1992-12-22

申请号：US762783

申请日：1991-09-19

申请人： Sakae Tanaka ,  Toshio Kashiwa ,  Yoshiaki Watanabe

发明人： Sakae Tanaka ,  Toshio Kashiwa ,  Yoshiaki Watanabe

IPC分类号： G09G3/20 ,  G09G3/36

CPC分类号： G09G3/3655 ,  G09G3/3648 ,  G09G3/3659 ,  G09G3/2011 ,  G09G3/3614

摘要： A method of driving an active matrix type liquid crystal display unit of the type including a plurality of liquid crystal layers, a plurality of switching elements, a plurality of pixel electrodes each connected between a liquid crystal layer and a switching element, a common electrode connected to the liquid crystal layers, a plurality of stick capacitive elements each connected to a pixel electrode, and a plurality of scanning lines each connected to a switching element, the method including the steps of selectively turning on the switching elements by applying selection signals to the scanning signal lines of the active matrix type liquid crystal display unit; supplying picture signals to picture signal lines connected with the pixel electrodes through the switching elements; and providing an alternating voltage as an integral fraction of a horizontal interval of a picture frame as at least a common voltage at the common electrode and/or a stick capacitor voltage supplied to the capacitive elements, so as to provide that the ratio of the change in liquid crystal light transmittance T to the change in picture signal voltage V.sub.SIG is smaller than the ratio of the change in liquid crystal light transmittance T to the change in effective voltage applied to a respective liquid crystal layer.

摘要翻译： 一种驱动有源矩阵型液晶显示单元的方法，所述有源矩阵型液晶显示单元包括多个液晶层，多个开关元件，连接在液晶层和开关元件之间的多个像素电极，连接的公共电极 液晶层，分别连接到像素电极的多个棒电容元件和各自连接到开关元件的多条扫描线，所述方法包括以下步骤：通过向所述液晶层施加选择信号来选择性地接通所述开关元件 扫描有源矩阵型液晶显示单元的信号线; 通过开关元件将图像信号提供给与像素电极连接的图像信号线; 并且提供交流电压作为图片帧的水平间隔的至少一个公共电压的共同电压和/或提供给电容元件的贴片电容器电压的积分分数，以便提供变化率 在液晶透光率T与图像信号电压VSIG的变化相比，液晶透光率T的变化比与施加于各液晶层的有效电压的变化的比值小。

公开(公告)号：US5114869A

公开(公告)日：1992-05-19

申请号：US358039

申请日：1989-05-26

申请人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

发明人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

IPC分类号： H01L27/12 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  Y10S438/919

摘要： A method for producing a reverse staggered type silicon thin film transistor includes the steps of forming a gate insulating layer on a substrate having a gate electrode, the gate insulating layer having a transistor-forming portion; forming an intrinsic silicon film on the transistor-forming portion of the gate insulating layer; forming an n-type silicon layer on the intrinsic silicon layer; forming a source electrode on the n-type silicon layer; forming a drain electrode on the n-type silicon layer; forming a resist layer on the source electrode and drain electrode and having the same shape thereof; subsequently removing a portion of the n-type silicon layer by using the resist layer as a mask, such that there remains a predetermined thickness of the n-type silicon layer; and doping the predetermined thickness of the n-type silicon layer with p-type impurities by using the resist layer as a mask.

摘要翻译： 反向交错型硅薄膜晶体管的制造方法包括在具有栅电极的基板上形成栅极绝缘层的步骤，栅极绝缘层具有晶体管形成部分; 在栅极绝缘层的晶体管形成部分上形成本征硅膜; 在本征硅层上形成n型硅层; 在n型硅层上形成源电极; 在n型硅层上形成漏电极; 在源电极和漏电极上形成抗蚀剂层并具有相同的形状; 然后通过使用抗蚀剂层作为掩模去除n型硅层的一部分，使得保留n型硅层的预定厚度; 并通过使用抗蚀剂层作为掩模，将p型杂质的n型硅层的预定厚度掺杂。

公开(公告)号：US5091337A

公开(公告)日：1992-02-25

申请号：US609127

申请日：1990-11-01

申请人： Yoshiaki Watanabe ,  Sakae Tanaka

发明人： Yoshiaki Watanabe ,  Sakae Tanaka

IPC分类号： H01L27/12 ,  H01L21/027 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/0274 ,  Y10S148/105

摘要： A method for manufacturing an amorphous silicon thin film transistor in which a gate insulating layer is provided over a gate on a substrate. An amorphous silicon layer is formed on the gate insulating layer, and a protective insulating layer is formed on the amorphous silicon layer. A pattern conforming to the gate is applied to the protective layer, and the amorphous layer is exposed in regions outside of the pattern. A doped silicon layer is then added, and source and drain electrodes formed to partly overlap the remaining protective insulating layer.

摘要翻译： 一种非晶硅薄膜晶体管的制造方法，其中栅极绝缘层设置在基板上的栅极上。 在栅绝缘层上形成非晶硅层，在非晶硅层上形成保护绝缘层。 将符合栅极的图案施加到保护层，并且非晶层暴露在图案外部的区域中。 然后添加掺杂硅层，并且形成源极和漏极以与剩余的保护绝缘层部分重叠。

公开(公告)号：US5053354A

公开(公告)日：1991-10-01

申请号：US535440

申请日：1990-06-08

申请人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

发明人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

IPC分类号： H01L29/786

CPC分类号： H01L29/78669

摘要： A reverse staggered type silicon thin film transistor includes a substrate having a gate electrode; a gate insulating layer on the substrate and the gate electrode, the gate insulating layer having a transistor-forming portion; a lower layer silicon film on the transistor-forming portion of the gate insulating layer and in contact therewith, the lower layer silicon film being formed at a first temperature and with a first thickness; an upper layer silicon film formed on the transistor-forming portion of the gate insulating layer at a second temperature which is lower than the first temperature and with a second thickness greater than the first thickness; an n-type silicon layer on the upper layer silicon film and in contact therewith; a source electrode on the n-type silicon layer; and a drain electrode on the n-type silicon layer.

摘要翻译： 反向交错型硅薄膜晶体管包括具有栅电极的基板; 在所述基板上的栅极绝缘层和所述栅电极，所述栅极绝缘层具有晶体管形成部分; 在所述栅极绝缘层的所述晶体管形成部分上与其接触的下层硅膜，所述下层硅膜以第一温度和第一厚度形成; 在第二温度下形成在所述栅极绝缘层的所述晶体管形成部分上的上层硅膜，所述第二温度低于所述第一温度并且具有大于所述第一厚度的第二厚度; 在上层硅膜上并与其接触的n型硅层; n型硅层上的源电极; 和n型硅层上的漏电极。

公开(公告)号：US5047819A

公开(公告)日：1991-09-10

申请号：US551688

申请日：1990-07-12

申请人： Sakae Tanaka ,  Yoshiaki Watanabe

发明人： Sakae Tanaka ,  Yoshiaki Watanabe

IPC分类号： H01L21/768 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/31 ,  H01L23/482 ,  H01L23/522 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L27/12 ,  G02F1/1368 ,  H01L23/4825 ,  H01L29/78669 ,  H01L2924/0002

摘要： A reverse staggered amorphous silicon thin film transistor array substrate includes an array of amorphous silicon thin film transistors, gate wiring interconnecting the gate electrodes of the amorphous silicon thin film transistors, and source wirings. The transistor array is provided on a thin film transistor array substrate. A protective insulation layer and an amorphous silicon layer having a greater width than the source wiring are provided under the source wiring.

摘要翻译： 反向交错非晶硅薄膜晶体管阵列基板包括非晶硅薄膜晶体管阵列，互连非晶硅薄膜晶体管的栅电极的栅极布线和源极布​​线。 晶体管阵列设置在薄膜晶体管阵列基板上。 在源极布线下方设置有比源极布线宽的保护绝缘层和非晶硅层。

公开(公告)号：US4861765A

公开(公告)日：1989-08-29

申请号：US877355

申请日：1986-06-23

申请人： Morihiro Mitsukuchi ,  Tomoyuki Ikemoto ,  Yoshiaki Watanabe ,  Kaoru Sota

发明人： Morihiro Mitsukuchi ,  Tomoyuki Ikemoto ,  Yoshiaki Watanabe ,  Kaoru Sota

IPC分类号： A61K31/57 ,  A61P29/00 ,  A61P37/08 ,  C07J31/00

CPC分类号： C07J31/006

摘要： A 21-substituted thiosteroid represented by the general formula ##STR1## wherein R.sup.1 represents an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 or 6 carbon atoms, a phenyl group, or a benzyl group which may have a substituent on the benzene ring,R.sup.2 represents an alkanoyl group having 2 to 6 carbon atoms,R.sup.3 represents a hydrogen atom or a methyl group,X represents a hydrogen or halogen atom, andthe dotted line between 1- and 2-positions represents an optional bond. These compounds are useful an anti-inflammatory agents.

摘要翻译： 由通式（I）表示的21取代的硫代甾族化合物，其中R 1表示具有1至6个碳原子的烷基，具有5或6个碳原子的环烷基，苯基或苄基 苯环上的取代基，R2表示碳原子数2〜6的烷酰基，R3表示氢原子或甲基，X表示氢原子或卤素原子，1〜2位的虚线表示 可选债券。 这些化合物可用作抗炎剂。