摘要:
The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods.
摘要:
The disclosure provides an optical system having an optical axis, where the optical system includes a polarization manipulator which includes first and second subelements. The first subelement has a non-planar, optically effective surface. For light passing through the first subelement, the first subelement causes a change in the polarization state. A maximum effective retardation introduced by the first subelement along the optical axis is less than a quarter of the working wavelength of the optical system. The first subelement and the second subelement have mutually facing surfaces which are mutually complementary. The optical system also includes a position manipulator to manipulate the relative position of the first and second subelements.
摘要:
An illumination system for a microlithographic projection exposure apparatus includes an EUV light source which generates an emission beam of linearly polarized EUV illumination light. An illumination optics guides the emission beam along an optical axis which causes an illumination field in a reticle plane to be illuminated by the emission beam. The illumination system also includes an illumination subunit of the illumination system. The illumination subunit includes at least the EUV light source and a polarization setting device for setting a defined polarization of the EUV emission beam of the illumination subunit.
摘要:
Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9), including a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17) and a third partial objective (19) imaging the second intermediate image onto the image field (7). The second partial objective (15) has exactly one concave mirror (21) and at least one lens (23). The minimum distance between an optically utilized region of the concave mirror (21) and an optically utilized region of a surface (25)—facing the concave mirror—of a lens (23) adjacent to the concave mirror is greater than 10 mm.
摘要:
A catadioptric projection objective has a multiplicity of lenses and at least one concave mirror, and also two deflection mirrors in order to separate a partial beam path running from the object field to the concave mirror from the partial beam path running from the concave mirror to the image field. The deflection mirrors are tilted relative to the optical axis of the projection objective about tilting axes running parallel to a first direction (x-direction). The first deflection mirror is arranged in optical proximity to a first field plane and the second deflection mirror is arranged in optical proximity to a second field plane, which is optically conjugate with respect to the first field plane. A displacement device for the synchronous displacement of the deflection mirrors is provided. The deflection mirrors have different local distributions of their reflection properties in first and second reflection regions, respectively.
摘要:
The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods.
摘要:
An optical system, such as an illumination device or a projection objective of a microlithographic projection exposure apparatus, is disclosed. The optical system can include a polarization compensator which has at least one polarization-modifying partial element. The optical system can also include a manipulator by which the position of the at least one partial element can be altered. At least one operating mode of the optical system can be set in which the intensity, over a region which belongs to a plane perpendicular to the optical axis and which can be illuminated with light from the light source, does not exceed 20% of the maximum intensity in the plane, and the manipulator is arranged in the region.
摘要:
The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and components.
摘要:
Another approach to decrease the resolution is to introduce an immersion liquid having high refractive index into the gap that remains between a final lens element on the image side of the projection objective and the photoresist or another photosensitive layer to be exposed. Projection objectives that are designed for immersion operation and are therefore also referred to as immersion objective may reach numerical apertures of more than 1, for example 1.3 or 1.4. The term “immersion liquid” shall, in the context of this application, relate also to what is commonly referred to as “solid immersion”. In the case of solid immersion, the immersion liquid is in fact a solid medium that, however, does not get in direct contact with the photoresist but is spaced apart from it by a distance that is only a fraction of the wavelength used. This ensures that the laws of geometrical optics do not apply such that no total reflection occurs.
摘要:
The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.