公开(公告)号：US08155718B2

公开(公告)日：2012-04-10

申请号：US11227268

申请日：2005-09-16

申请人： Chang-Heum Byun ,  Jong-Gun Bae ,  Sung-Ill Kang ,  Seung-Hwan Lee ,  In-Gon Park ,  Chang-soo Lee

发明人： Chang-Heum Byun ,  Jong-Gun Bae ,  Sung-Ill Kang ,  Seung-Hwan Lee ,  In-Gon Park ,  Chang-soo Lee

IPC分类号： H04M1/00

CPC分类号： H04M1/0237 ,  H04M1/0227 ,  H04M1/0233 ,  Y10S248/917 ,  Y10T16/540255 ,  Y10T16/54038 ,  Y10T16/54056

摘要： Disclosed herein is a sliding/hinge apparatus for sliding/rotating type mobile terminals, which can be slid and rotated from a body housing of the sliding/rotating type mobile terminal. The sliding/rotating type mobile terminal includes a body housing and a slide housing slidably mounted on the body housing. The apparatus comprises first and second hinge frames mounted in the body housing by means of screws, first and second plates, one or more slide bars, and a coupling unit inserted through the center parts of the first and second hinge frames so that the first and second hinge frames are rotatably coupled with each other while being opposite to each other.

摘要翻译： 这里公开了一种用于滑动/旋转型移动终端的滑动/铰链装置，其可以从滑动/旋转式移动终端的主体壳体滑动和旋转。 滑动/旋转式移动终端包括主体壳体和可滑动地安装在主体壳体上的滑动壳体。 该装置包括通过螺钉，第一和第二板，一个或多个滑动杆以及通过第一和第二铰链框架的中心部分插入的联接单元安装在主体壳体中的第一和第二铰链框架，使得第一和第二铰链框架 第二铰链框架彼此相对地可旋转地联接。

公开(公告)号：US07888772B2

公开(公告)日：2011-02-15

申请号：US12013290

申请日：2008-01-11

申请人： Dae-Jin Kwon ,  Woo-Sik Kim ,  Maeda Shigenobu ,  Seung-Hwan Lee ,  Sung-Rey Wi ,  Wang-Xiao Quan ,  Hyun-Min Choi

发明人： Dae-Jin Kwon ,  Woo-Sik Kim ,  Maeda Shigenobu ,  Seung-Hwan Lee ,  Sung-Rey Wi ,  Wang-Xiao Quan ,  Hyun-Min Choi

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a fuse transistor for fuse programming and a fuse block connected to the fuse transistor, wherein the fuse block comprises a fuse line and a heat spreading structure connected to the fuse line. The electrical fuse employs the heat spreading structure connected to the fuse line to prevent a rupture of the electrical fuse such that heat, which is generated in the fuse line during a blowing of the fuse line, is spread throughout the heat spreading structure. Thus, a sensing margin of the electrical fuse can be secured and a deterioration of devices adjacent to the electrical fuse by heat generated in the electrical fuse can be prevented.

摘要翻译： 半导体器件包括用于熔丝编程的熔丝晶体管和连接到熔丝晶体管的熔丝块，其中熔丝块包括熔丝线和连接到熔丝线的散热结构。 电熔丝采用连接到熔丝线的散热结构，以防止电熔丝断裂，使得在熔断丝熔化期间在熔丝线中产生的热量散布在整个散热结构中。 因此，可以确保电熔丝的感测余量，并且可以防止在电熔丝中产生的热量与电熔丝相邻的器件的劣化。

公开(公告)号：US20100301516A1

公开(公告)日：2010-12-02

申请号：US12792225

申请日：2010-06-02

申请人： In-Sik HAN ,  Jae-Young Lee ,  Seung-Hwan Lee ,  Jae-Young Kim ,  So-Yeon Kwon

发明人： In-Sik HAN ,  Jae-Young Lee ,  Seung-Hwan Lee ,  Jae-Young Kim ,  So-Yeon Kwon

IPC分类号： D01F1/10

CPC分类号： D01F6/605 ,  D01D5/06 ,  Y02P20/582 ,  Y10T428/2913 ,  Y10T428/2969

摘要： Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized by comprising multi-stage injection of a coagulant with sulfuric acid concentration lowered sequentially stage by stage, to a spun material fed into a coagulant injection tank. The present invention enables increase of a spinning and take-up velocity without occurrence of thread cutting by uniformly and evenly coagulating surface and inside of the spun material. In addition, the present invention recovers the coagulant or water already used and reuses the recovered coagulant or water in the earlier stages, so that it has advantages of saving production costs and reducing environmental contamination. Accordingly, the wholly aromatic polyamide filament produced according to the present invention has high crystallinity X, large apparent crystal size ACS and reduced defects in the crystal itself, thereby exhibiting more improved physical properties such as strength and modulus.

摘要翻译： 公开了全芳香族聚酰胺长丝及其制造方法，其特征在于，包括多阶段将硫酸浓度逐级降低的凝结剂注入供给到凝结剂注入槽中的纺丝材料。 本发明通过使纺丝材料的表面和内部均匀均匀地凝固，能够提高纺丝和卷取速度，而不会产生螺纹切割。 此外，本发明回收已经使用的凝结剂或水，并且在早期阶段重新使用回收的凝结剂或水，从而具有节省生产成本和减少环境污染的优点。 因此，根据本发明生产的全芳族聚酰胺长丝具有高结晶度X，大的表观晶体尺寸ACS，并减少了晶体本身的缺陷，从而表现出更好的物理性能如强度和模量。

公开(公告)号：US20100151527A1

公开(公告)日：2010-06-17

申请号：US12450570

申请日：2008-03-28

申请人： Takashi Endo ,  Seung-Hwan Lee ,  Yoshikuni Teramoto ,  Noriko Tanaka ,  Manami Sakai ,  Naomi Kadotani

发明人： Takashi Endo ,  Seung-Hwan Lee ,  Yoshikuni Teramoto ,  Noriko Tanaka ,  Manami Sakai ,  Naomi Kadotani

IPC分类号： C12P19/00 ,  B32B5/00 ,  D21C9/00

CPC分类号： C12P19/14 ,  C08L97/02 ,  C12P19/02 ,  C13K1/02 ,  C13K13/002 ,  Y10T428/298

摘要： [Problem] To provide a fine fibrous cellulosic material capable of producing a saccharide in a high yield by hydrolysis; to provide a process for producing the fine fibrous cellulosic material from a cellulosic material; and to provide a process for producing the saccharide using the fine fibrous cellulosic material.[Means for Solving Problems] The present invention is the fine fibrous cellulosic material containing cellulose, hemicellulose and lignin, which the fine fibrous cellulosic material has a width of 1 μm or less and a length of 5,000 μm or less and is used for glycation reaction by hydrolysis.

摘要翻译： [问题]提供能够通过水解以高产率生产糖的细纤维状纤维素材料; 提供从纤维素材料制造细纤维状纤维素材料的方法; 并提供使用细纤维状纤维素材料生产糖的方法。 解决问题的手段本发明是纤维素，半纤维素和木质素的细纤维状纤维素材料，细纤维状纤维素材料的宽度为1μm以下，长度为5000μm以下，用于糖化反应 通过水解。

公开(公告)号：US07560349B2

公开(公告)日：2009-07-14

申请号：US11366453

申请日：2006-03-03

申请人： Ki-Yeon Park ,  Kyoung-Ryul Yoon ,  Dae-Sik Choi ,  Han-Mei Choi ,  Seung-Hwan Lee

发明人： Ki-Yeon Park ,  Kyoung-Ryul Yoon ,  Dae-Sik Choi ,  Han-Mei Choi ,  Seung-Hwan Lee

IPC分类号： H01L21/336 ,  H01L21/3205

CPC分类号： H01L21/022 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02247 ,  H01L21/0228 ,  H01L21/28273 ,  H01L21/318 ,  H01L29/513 ,  H01L29/7881

摘要： A semiconductor device and/or gate structure having a composite dielectric layer and methods of manufacturing the same is provided. In the semiconductor device, gate structure, and methods provided, a first conductive layer may be formed on a substrate. A native oxide layer formed on the first conductive layer may be removed. A surface of the first conductive layer may be nitrided so that the surface may be altered into a nitride layer. A composite dielectric layer including the first and/or second dielectric layers may be formed on the nitride layer. A second conductive layer may be formed on the composite dielectric layer. The first dielectric layer may include a material having a higher dielectric constant. The second dielectric layer may be capable of suppressing crystallization of the first dielectric layer.

公开(公告)号：US07425493B2

公开(公告)日：2008-09-16

申请号：US11059449

申请日：2005-02-17

申请人： Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young You

发明人： Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young You

IPC分类号： H01L21/20 ,  H01L21/31

CPC分类号： H01L28/40 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/90

摘要： A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.

摘要翻译： 可以在基板上形成包括电介质结构的电容器，下部电极。 电介质结构可以形成在下电极上，并且可以包括可以改善电介质结构的形态的第一薄膜和可以具有大于第一薄膜的EOT中的至少一个的第二薄膜 薄膜和比第一薄膜高的介电常数。 可以在电介质结构上形成上电极，并且电介质结构可以具有改进的形态和/或更高的介电常数。

公开(公告)号：US07402491B2

公开(公告)日：2008-07-22

申请号：US11261737

申请日：2005-10-28

申请人： Han-Mei Choi ,  Kyoung-Ryul Yoon ,  Seung-Hwan Lee ,  Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

发明人： Han-Mei Choi ,  Kyoung-Ryul Yoon ,  Seung-Hwan Lee ,  Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

IPC分类号： H01L21/336

CPC分类号： H01L21/0228 ,  H01L21/02189 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31641 ,  H01L27/11521

摘要： A method of manufacturing a semiconductor device can include forming a tunnel oxide layer on a substrate, forming a floating gate on the tunnel oxide layer and forming a dielectric layer pattern on the floating gate using an ALD process. The dielectric layer pattern can include a metal precursor that includes zirconium and an oxidant. A control gate can be formed on the dielectric layer pattern. The semiconductor device can include the dielectric layer pattern provided herein.

摘要翻译： 制造半导体器件的方法可以包括在衬底上形成隧道氧化物层，在隧道氧化物层上形成浮栅，并使用ALD工艺在浮栅上形成电介质层图案。 介电层图案可以包括包含锆和氧化剂的金属前体。 可以在电介质层图案上形成控制栅极。 半导体器件可以包括本文提供的电介质层图案。

公开(公告)号：US20080090353A1

公开(公告)日：2008-04-17

申请号：US11859618

申请日：2007-09-21

申请人： Ki-Yeon Park ,  Sun-Jung Kim ,  Min-Kyung Ryu ,  Seung-Hwan Lee ,  Han-Mei Choi

发明人： Ki-Yeon Park ,  Sun-Jung Kim ,  Min-Kyung Ryu ,  Seung-Hwan Lee ,  Han-Mei Choi

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： A method of manufacturing a non-volatie memory device includes forming a tunnel insulating layer on a substrate, forming a conductive pattern on the tunnel insulating layer, forming a lower dielectric layer on the conductive pattern, performing a first heat treatment process to density the lower dielectric layer, and forming a middle dielectric layer having an energy band gap smaller than that of the lower dielectric layer on the first heat-treated lower dielectric layer. The method further includes forming an upper dielectric layer including a material substantially identical to that of the lower dielectric layer on the middle dielectric layer, performing a second heat treatment process to densify the middle dielectric layer and the upper dielectric layer and forming a conductive layer on the second heat-treated upper dielectric layer.

摘要翻译： 制造非挥发性记忆装置的方法包括在基板上形成隧道绝缘层，在隧道绝缘层上形成导电图案，在导电图案上形成下介电层，进行第一热处理工艺以密度较低 并且形成具有比第一经热处理的下电介质层上的下介电层的能带隙小的能带隙的中间电介质层。 该方法还包括形成上介电层，其包括与中间介电层上的下电介质层的材料基本相同的材料，执行第二热处理工艺以使中介电层和上电介质层致密并形成导电层 第二热处理的上介电层。

公开(公告)号：US20070254368A1

公开(公告)日：2007-11-01

申请号：US11740390

申请日：2007-04-26

申请人： Sang Lee ,  Seung-Hwan Lee

发明人： Sang Lee ,  Seung-Hwan Lee

IPC分类号： C12N15/74

CPC分类号： C12N15/1037 ,  C07K2319/03 ,  C07K2319/035 ,  C12N15/62

摘要： The present invention relates to a method for simultaneously surface expressing a target protein using a cofactor and an enzyme regenerating the cofactor on the cell surface. According to the present invention, it is possible to provide a microorganism capable of simultaneously surface expressing a target protein using a cofactor to transform a biochemical material at a high efficiency and an enzyme generating the cofactor without adding an expensive cofactor in a large amount.

摘要翻译： 本发明涉及使用辅因子和在细胞表面再生辅因子的酶同时表达表达靶蛋白的方法。 根据本发明，可以提供一种能够使用辅因子同时表达表达目标蛋白的微生物，以高效率地转化生化材料，并且可以提供生成辅因子的酶，而不会大量添加昂贵的辅因子。

公开(公告)号：US07279392B2

公开(公告)日：2007-10-09

申请号：US11046876

申请日：2005-02-01

申请人： Seung-Hwan Lee ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

发明人： Seung-Hwan Lee ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

IPC分类号： H01L21/20 ,  H01L29/00

CPC分类号： C23C16/45529 ,  C23C16/308 ,  C23C16/405 ,  H01L27/11502 ,  H01L27/11507

摘要： A thin film structure and a capacitor using the film structure and methods for forming the same. The thin film structure may include a first film formed on a substrate using a first reactant and an oxidant for oxidizing the first reactant. A second film may be formed on the first film to suppress crystallization of the first film. A capacitor may include a dielectric layer, which may further include the first thin film and the second thin film.

摘要翻译： 薄膜结构和使用该薄膜结构的电容器及其形成方法。 薄膜结构可以包括使用第一反应物和用于氧化第一反应物的氧化剂在基底上形成的第一膜。 可以在第一膜上形成第二膜以抑制第一膜的结晶。 电容器可以包括电介质层，其可以进一步包括第一薄膜和第二薄膜。