公开(公告)号：US08541861B2

公开(公告)日：2013-09-24

申请号：US13069610

申请日：2011-03-23

Applicant: Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

Inventor： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

IPC: H01L31/058

CPC classification number: G01J5/10 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/20

Abstract: According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

Abstract translation: 根据一个实施例，红外检测装置包括检测元件。 检测元件包括半导体衬底，信号互连部分，检测单元和支撑部分。 半导体衬底在半导体衬底的表面上设置有空腔。 信号互连部分设置在围绕半导体衬底的空腔的区域中。 与空腔上方的半导体衬底间隔开的检测单元包括热电转换层和吸收层。 吸收层与热电转换层层叠，并且设置有多个孔，每个孔具有上部加宽的形状。 支撑部分将检测单元保持在空腔上方并连接信号互连部分和检测单元。

公开(公告)号：US08502905B2

公开(公告)日：2013-08-06

申请号：US13039504

申请日：2011-03-03

Applicant: Risako Ueno ,  Hideyuki Funaki ,  Mitsuyoshi Kobayashi

Inventor： Risako Ueno ,  Hideyuki Funaki ,  Mitsuyoshi Kobayashi

IPC: H04N5/225 ,  G02B13/16

CPC classification number: H04N13/218 ,  H04N13/232

Abstract: In one embodiment, a solid-state imaging device includes: an imaging optical system including: a first and second surfaces facing each other; a flat reflector provided on the first surface and having an aperture in an outer circumferential portion; and a plurality of reflectors provided on the second surface and located in a plurality of ring-like areas, each of the reflectors being inclined in a radial direction, the reflectors having different diameters from one another; and an imaging element module including: an imaging element including an imaging area having a plurality of pixel blocks each including a plurality of pixels, and receiving and converting light from the imaging optical system into image data; a visible light transmission substrate provided between the imaging optical system and the imaging element; a microlens array provided on a surface of the visible light transmission substrate on the imaging element side; and an image processing unit processing the image data obtained by the imaging element.

Abstract translation: 在一个实施例中，固态成像装置包括：成像光学系统，包括：彼此面对的第一和第二表面; 设置在第一表面上并在外圆周部分具有孔的平面反射器; 以及设置在所述第二表面上并且位于多个环状区域中的多个反射器，每个所述反射器在径向方向上倾斜，所述反射器彼此具有不同的直径; 以及成像元件模块，包括：成像元件，包括具有多个像素块的成像区域，每个像素块包括多个像素，并且将来自所述成像光学系统的光接收并转换为图像数据; 设置在所述摄像光学系统和所述摄像元件之间的可见光透射基板; 设置在所述可见光透射基板的所述摄像元件侧的表面上的微透镜阵列; 以及图像处理单元，处理由所述成像元件获得的图像数据。

公开(公告)号：US08415622B2

公开(公告)日：2013-04-09

申请号：US13414941

申请日：2012-03-08

Applicant: Kazuhiro Suzuki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

Inventor： Kazuhiro Suzuki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

IPC: H01L25/00

CPC classification number: H01L27/14618 ,  G01J5/024 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.

Abstract translation: 根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热， 由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。 在第二基板和红外线检测单元之间形成第二空腔。

公开(公告)号：US08344321B2

公开(公告)日：2013-01-01

申请号：US13358056

申请日：2012-01-25

Applicant: Hiroto Honda ,  Hideyuki Funaki

Inventor： Hiroto Honda ,  Hideyuki Funaki

IPC: G01J5/12

CPC classification number: H04N5/33 ,  G01J1/42 ,  G01J5/024 ,  G01J5/025 ,  G01J5/026 ,  G01J2005/0077 ,  H01L27/14609 ,  H01L27/14649 ,  H04N5/357 ,  H04N5/3651

Abstract: An infrared imaging device according to an embodiment includes: an imaging area formed on a semiconductor substrate, the imaging area having a plurality of pixels arranged in a matrix form, the plurality of pixels including a plurality of reference pixels arranged in at least one row and a plurality of infrared detection pixels arranged in remaining rows to detect incident infrared rays, each of the reference pixels having a first thermoelectric conversion element, each of the infrared detection pixel having a thermoelectric conversion unit, the thermoelectric conversion unit having an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a second thermoelectric conversion element to convert the heat obtained by the conversion conducted by the infrared absorption film to an electric signal.

Abstract translation: 根据实施例的红外成像装置包括：形成在半导体衬底上的成像区域，所述成像区域具有以矩阵形式布置的多个像素，所述多个像素包括布置在至少一行中的多个参考像素， 多个红外线检测像素，排列在剩余的行中以检测入射的红外线，每个参考像素具有第一热电转换元件，每个红外检测像素具有热电转换单元，所述热电转换单元具有红外线吸收膜， 吸收入射的红外线并将入射的红外线转换成热和第二热电转换元件，以将通过红外线吸收膜进行的转换所获得的热量转换为电信号。

公开(公告)号：US20120229683A1

公开(公告)日：2012-09-13

申请号：US13221097

申请日：2011-08-30

Applicant: Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

Inventor： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

IPC: H04N9/64

CPC classification number: H04N5/232

Abstract: A solid-state imaging device according to an embodiment includes: a first optical system configured to form an image of an object on an image formation plane; an imaging element comprising an imaging area which includes a plurality of pixel blocks each including a plurality of pixels; a second optical system configured to include a microlens array including a plurality of microlenses provided to correspond to the plurality of pixel blocks and reduce and re-form an image scheduled to be formed on the image formation plane, in a pixel block corresponding to an individual microlens; and a signal processing unit configured to perform image signal processing with an optical position relation between each microlens and the pixel block corrected, by using an image signal of the object obtained by the imaging element.

Abstract translation: 根据实施例的固态成像装置包括：第一光学系统，被配置为在图像形成平面上形成对象的图像; 成像元件包括：成像区域，其包括多个像素块，每个像素块包括多个像素; 第二光学系统，被配置为包括微透镜阵列，所述微透镜阵列包括多个微透镜，所述微透镜提供为对应于所述多个像素块，并且在对应于个体的像素块中减少并重新形成被调度以形成在所述图像形成平面上的图像 微透镜 以及信号处理单元，被配置为通过使用由所述成像元件获得的所述对象的图像信号，通过校正的每个微透镜与所述像素块之间的光学位置关系来执行图像信号处理。

公开(公告)号：US20120228497A1

公开(公告)日：2012-09-13

申请号：US13414941

申请日：2012-03-08

Applicant: Kazuhiro SUZUKI ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

Inventor： Kazuhiro SUZUKI ,  Hiroto Honda ,  Ikuo Fujiwara ,  Hideyuki Funaki ,  Hitoshi Yagi ,  Keita Sasaki ,  Honam Kwon ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  G01J5/024 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.

Abstract translation: 根据实施例的红外成像元件包括：包括硅第一基板的堆叠结构的半导体基板和第一绝缘膜，在第一基板的表面上设置有第一空腔; 红外线检测单元，设置在所述半导体基板中，并且包括分别设置在所述第一空腔上的检测单元，每个所述检测单元具有二极管和第二绝缘膜，所述第一绝缘膜将入射红外线转换成加热， 由所述第一绝缘膜获得的电信号;第三绝缘膜，其具有与所述第二绝缘膜的顶面相比位于距所述半导体基板更远的距离的顶面; 以及设置在所述第三绝缘膜上的第二基板。 在第二基板和红外线检测单元之间形成第二空腔。

公开(公告)号：US20120228496A1

公开(公告)日：2012-09-13

申请号：US13235388

申请日：2011-09-18

Applicant: Masako OGATA ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

Inventor： Masako OGATA ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14649 ,  H01L27/14632 ,  H01L27/14687

Abstract: An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

Abstract translation: 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

公开(公告)号：US20120218448A1

公开(公告)日：2012-08-30

申请号：US13221061

申请日：2011-08-30

Applicant: Risako UENO ,  Hideyuki Funaki ,  Mitsuyoshi Kobayashi

Inventor： Risako UENO ,  Hideyuki Funaki ,  Mitsuyoshi Kobayashi

IPC: H04N5/335

CPC classification number: G06T7/0065 ,  G02B3/0037 ,  H01L27/14627 ,  H04N5/23229 ,  H04N9/045 ,  H04N2209/042

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element formed on a semiconductor substrate, and comprising an imaging region including a plurality of pixel blocks each including a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system comprising a microlens array including a plurality of microlenses each corresponding to one of the pixel blocks, and reducing and re-forming the image to be formed on the imaging plane on the pixel blocks corresponding to the respective microlenses. The imaging plane of the first optical system is located further away from the first optical system than the imaging element when the object is located at an infinite distance.

Abstract translation: 根据实施例的固态成像装置包括：成像元件，形成在半导体衬底上，并且包括：成像区域，包括多个像素块，每个像素块包括多个像素; 第一光学系统，其在成像平面上形成物体的图像; 以及第二光学系统，其包括微透镜阵列，所述微透镜阵列包括多个微透镜，每个微透镜各自对应于所述像素块之一，并且在对应于所述各个微透镜的像素块上减小并重新形成将在所述成像平面上形成的图像。 当物体位于无限距离时，第一光学系统的成像平面位于比成像元件更远离第一光学系统的位置。

公开(公告)号：US20120119088A1

公开(公告)日：2012-05-17

申请号：US13358056

申请日：2012-01-25

Applicant: Hiroto HONDA ,  Hideyuki Funaki

Inventor： Hiroto HONDA ,  Hideyuki Funaki

IPC: G01J5/48

CPC classification number: H04N5/33 ,  G01J1/42 ,  G01J5/024 ,  G01J5/025 ,  G01J5/026 ,  G01J2005/0077 ,  H01L27/14609 ,  H01L27/14649 ,  H04N5/357 ,  H04N5/3651

Abstract: An infrared imaging device according to an embodiment includes: an imaging area formed on a semiconductor substrate, the imaging area having a plurality of pixels arranged in a matrix form, the plurality of pixels including a plurality of reference pixels arranged in at least one row and a plurality of infrared detection pixels arranged in remaining rows to detect incident infrared rays, each of the reference pixels having a first thermoelectric conversion element, each of the infrared detection pixel having a thermoelectric conversion unit, the thermoelectric conversion unit having an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a second thermoelectric conversion element to convert the heat obtained by the conversion conducted by the infrared absorption film to an electric signal.

Abstract translation: 根据实施例的红外成像装置包括：形成在半导体衬底上的成像区域，所述成像区域具有以矩阵形式布置的多个像素，所述多个像素包括布置在至少一行中的多个参考像素， 多个红外线检测像素，排列在剩余的行中以检测入射的红外线，每个参考像素具有第一热电转换元件，每个红外检测像素具有热电转换单元，所述热电转换单元具有红外线吸收膜， 吸收入射的红外线并将入射的红外线转换成热和第二热电转换元件，以将通过红外线吸收膜进行的转换所获得的热量转换为电信号。

公开(公告)号：US20120056291A1

公开(公告)日：2012-03-08

申请号：US13051413

申请日：2011-03-18

Applicant: Kazuhiro Suzuki ,  Risako Ueno ,  Honam Kwon ,  Koichi Ishii ,  Hideyuki Funaki

Inventor： Kazuhiro Suzuki ,  Risako Ueno ,  Honam Kwon ,  Koichi Ishii ,  Hideyuki Funaki

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14618 ,  H01L27/14649 ,  H01L2224/13

Abstract: According to one embodiment, an imaging device includes a substrate, a photodetecting portion, a circuit portion and a through interconnect. The substrate has a first major surface, a second major surface on a side opposite to the first major surface, a recess portion provided on the first major surface and retreated in a first direction going from the first major surface to the second major surface, and a through hole communicating with the first major surface and the second major surface and extending in the first direction. The photodetecting portion is provided above the recess portion and away from the substrate. The circuit portion is electrically connected to the photodetecting portion and provided on the first major surface. The through interconnect is electrically connected to the circuit portion and provided inside the through hole. The recess portion has a first inclined surface. The through hole has a second inclined surface.

Abstract translation: 根据一个实施例，成像装置包括基板，光电检测部分，电路部分和通孔互连。 基板具有第一主表面，与第一主表面相对的一侧的第二主表面，设置在第一主表面上并沿着从第一主表面到第二主表面的第一方向退回的凹部，以及 与所述第一主表面和所述第二主表面连通并且沿所述第一方向延伸的通孔。 光电检测部分设置在凹部的上方并远离基板。 电路部分电连接到光电检测部分并设置在第一主表面上。 通孔互连电连接到电路部分并设置在通孔的内部。 凹部具有第一倾斜面。 通孔具有第二倾斜面。