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188 条记录 (耗时 0.038 秒)

    Adaptive nanotopography sculpting
    104.
    发明授权
    Adaptive nanotopography sculpting 有权
    自适应纳米成像雕刻

    公开(公告)号：US08394282B2

    公开(公告)日：2013-03-12

    申请号：US12479200

    申请日：2009-06-05

    申请人： Avinash Panga ,  Sidlgata V. Sreenivasan

    发明人： Avinash Panga ,  Sidlgata V. Sreenivasan

    IPC分类号： C23F1/00

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70483

    摘要： Adaptive imprint planarization provides a surface having desired shape characteristics. Generally, topography of a first surface is mapped to provide a density map. The density map is evaluated to provide a drop pattern for dispensing polymerizable material on the first surface. The polymerizable material is solidified and etched to provide a second surface having the desired shape characteristics. Additionally, adaptive imprint planarization compensates for parasitic effects of the imprinting process.

    摘要翻译： 自适应压印平坦化提供具有所需形状特征的表面。 通常，映射第一表面的形貌以提供密度图。 评估密度图以提供用于在第一表面上分配可聚合材料的液滴图案。 可聚合材料被固化和蚀刻以提供具有所需形状特征的第二表面。 此外，自适应压印平面化补偿了压印过程的寄生效应。

    Patterning a plurality of fields on a substrate to compensate for differing evaporation times
    105.
    发明授权
    Patterning a plurality of fields on a substrate to compensate for differing evaporation times 有权
    在衬底上形成多个场以补偿不同的蒸发时间

    公开(公告)号：US08142850B2

    公开(公告)日：2012-03-27

    申请号：US11692450

    申请日：2007-03-28

    申请人： Sidlgata V. Sreenivasan ,  Philip D. Schumaker

    发明人： Sidlgata V. Sreenivasan ,  Philip D. Schumaker

    IPC分类号： B05D3/00 ,  B05D5/00 ,  B05D5/12 ,  H01L21/84 ,  B31F1/07 ,  B44C1/24 ,  B41D7/00 ,  B41D1/06

    CPC分类号： G03F7/0002 ,  B81C1/0046 ,  B82Y10/00 ,  B82Y40/00

    摘要： A method of patterning a substrate comprising a plurality of fields, including, inter alia, positioning a first volume of fluid on a first subset of the plurality of fields of the substrate, with the first volume of fluid being subjected to a first evaporation time; positioning a second volume of fluid on a second subset of the plurality of fields of the substrate, differing from the first subset, with the second volume of fluid being subjected to a second evaporation time, differing from the first evaporation time; and patterning the first and second subsets of the plurality of fields, with the first subset of the plurality of fields being patterned prior to the second subset of the plurality of fields being patterned, with a volume associated with the second subset of the plurality of fields being greater than a volume associated with the first subset of the plurality of fields to compensate for the second evaporation time being greater than the first evaporation time.

    摘要翻译： 图案化包括多个场的衬底的方法，其特征在于，其特征在于，包括将第一体积的流体定位在衬底的多个场的第一子集上，第一体积的流体经受第一蒸发时间; 将第二体积的流体定位在与第一子集不同的衬底的多个场的第二子集上，其中第二体积的流体经受与第一蒸发时间不同的第二蒸发时间; 以及对所述多个场的所述第一和第二子集进行构图，其中所述多个场的所述第一子集在所述多个场的所述第二子集被构图之前被图案化，其中所述体积与所述多个场的所述第二子集相关联 大于与多个场的第一子集相关联的体积，以补偿第二蒸发时间大于第一蒸发时间。

    Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
    107.
    发明申请
    Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template 有权
    具有不同厚度的模板以便于排出位于基板和模板之间的气体

    公开(公告)号：US20110171340A1

    公开(公告)日：2011-07-14

    申请号：US13073533

    申请日：2011-03-28

    申请人： Douglas J. Resnick ,  Mario J. Meissl ,  Byung-Jin Choi ,  Sidlgata V. Sreenivasan

    发明人： Douglas J. Resnick ,  Mario J. Meissl ,  Byung-Jin Choi ,  Sidlgata V. Sreenivasan

    IPC分类号： B29C59/02

    CPC分类号： H01L21/67126 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/6715

    摘要： A nanoimprint lithography template including, inter alia, a body having first and second opposed sides with a first surface disposed on the first side, the second side having a recess disposed therein, the body having first and second regions with the second region surrounding the first region and the recess in superimposition with the first region, with a portion of the first surface in superimposition with the first region being spaced-apart from the second side a first distance and a portion of the first surface in superimposition with the second region being spaced-apart from the second side a second distance, with the second distance being greater than the first distance; and a mold disposed on the first side of the body in superimposition a portion of the first region.

    摘要翻译： 一种纳米压印光刻模板，其特别包括具有第一和第二相对侧的主体，第一表面设置在第一侧上，第二侧具有设置在其中的凹部，该主体具有第一和第二区域，第二区域围绕第一 所述凹部与所述第一区域叠加，所述第一表面的与所述第一区域重叠的部分与所述第二侧面间隔开第一距离，并且所述第一表面的与所述第二区域重叠的部分间隔开 从第二侧排出第二距离，第二距离大于第一距离; 以及模具，其设置在所述主体的第一侧上，以叠加所述第一区域的一部分。