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    STORAGE ELEMENT AND MEMORY
    101.
    发明申请
    STORAGE ELEMENT AND MEMORY 审中-公开
    存储元素和存储器

    公开(公告)号：US20160141491A1

    公开(公告)日：2016-05-19

    申请号：US15007382

    申请日：2016-01-27

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC: H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

    Abstract translation: 一种存储元件，包括存储层，其被配置为通过使用磁性材料的磁化状态来保存信息，在存储层的一侧上设置有钉扎磁化层，并具有隧道绝缘层，并且与磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。

    Memory element and memory device
    103.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US09293693B2

    公开(公告)日：2016-03-22

    申请号：US14446685

    申请日：2014-07-30

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: H01L29/82 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

    Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

    Abstract translation: 公开了一种信息存储元件，包括：第一层，其包括具有垂直于膜面的磁化方向的铁磁层; 耦合到所述第一层的绝缘层; 以及耦合到与所述第一层相对的所述绝缘层的第二层，所述第二层包括固定磁化，以便能够用作所述第一层的参考。 第一层能够根据磁性材料的磁化状态存储信息，并且磁化状态被配置为通过自旋注入而改变。 第一层接收的有效抗磁场的大小小于第一层的饱和磁化量。

    Storage element and memory
    105.
    发明授权
    Storage element and memory 有权
    存储元件和存储器

    公开(公告)号：US09287493B2

    公开(公告)日：2016-03-15

    申请号：US14045055

    申请日：2013-10-03

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC: H01L43/00 ,  H01L43/02 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

    Abstract translation: 一种存储元件，包括存储层，其被配置为通过使用磁性材料的磁化状态来保存信息，在存储层的一侧上设置有钉扎磁化层，并具有隧道绝缘层，并且与磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。

    Magnetic memory element and magnetic memory device
    107.
    发明授权
    Magnetic memory element and magnetic memory device 有权
    磁存储元件和磁存储器件

    公开(公告)号：US09196333B2

    公开(公告)日：2015-11-24

    申请号：US14278716

    申请日：2014-05-15

    Applicant: Sony Corporation

    Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

    IPC: G11C11/00 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

    CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: There is disclosed a memory element including a memory layer that has a magnetization and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, and a Ta film in contact with a face of the magnetization-fixed layer, the face of the magnetization-fixed layer is opposite to the insulating layer side.

    Abstract translation: 公开了一种存储元件，其包括存储层，该存储层具有相应于信息的磁化和磁化方向的变化; 具有磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录 相对于存储层执行信息，和与磁化固定层的表面接触的Ta膜，磁化固定层的表面与绝缘层侧相反。

    MAGNETORESISTIVE ELEMENT
    109.
    发明申请
    MAGNETORESISTIVE ELEMENT 有权
    磁电元件

    公开(公告)号：US20150221862A1

    公开(公告)日：2015-08-06

    申请号：US14607487

    申请日：2015-01-28

    Applicant: Sony Corporation

    Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

    IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02

    CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).

    Abstract translation: 磁阻元件包括层叠结构，其包括多个固定层，由非磁性材料形成的中间层和记录层，所述多个固定层经由非磁性层层叠，所述多个固定层具有 至少第一固定层和第二固定层，满足以下公式：S1> S2（其中S1是与中间层相邻的第一固定层的面向中间层的部分的面积，S2是 固定层的除了第一固定层之外的固定层中具有最小面积的区域）。

    Memory element and memory device
    110.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US09099642B2

    公开(公告)日：2015-08-04

    申请号：US14559167

    申请日：2014-12-03

    Applicant: Sony Corporation

    Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: G11C11/00 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

    Abstract: Spin transfer torque memory elements and memory devices are provided. In one embodiment, the spin transfer torque memory element includes a first portion including CoFeB, a second portion including CoFeB, an intermediate portion interposed between the first and second portions, a third portion adjoining the second portion opposite the intermediate portion, and a fourth portion adjoining the third portion opposite the second portion. The intermediate portion includes MgO. The third portion includes at least one of Ag, Au, Cr, Cu, Hf, Mo, Nb, Os, Re, Ru, Ta, W, and Zr. The fourth portion includes at least one alloy of Co, Fe, Pd, and Pt.

    Abstract translation: 提供自旋转矩记忆元件和存储器件。 在一个实施例中，自旋转移转矩存储元件包括包括CoFeB的第一部分，包括CoFeB的第二部分，介于第一和第二部分之间的中间部分，邻接与中间部分相对的第二部分的第三部分，以及第四部分 邻接与第二部分相对的第三部分。 中间部分包括MgO。 第三部分包括Ag，Au，Cr，Cu，Hf，Mo，Nb，Os，Re，Ru，Ta，W和Zr中的至少一种。 第四部分包括至少一种Co，Fe，Pd和Pt的合金。

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