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    Cleaning apparatus for filtration layer in seawater infiltration intake
    101.
    发明授权
    Cleaning apparatus for filtration layer in seawater infiltration intake 有权
    用于海水渗透摄入过滤层的清洗装置

    公开(公告)号：US09345993B2

    公开(公告)日：2016-05-24

    申请号：US14347525

    申请日：2012-08-10

    Applicant: Hideyuki Niizato ,  Takayuki Inoue ,  Kiyokazu Mukai ,  Hitoshi Mimura

    Inventor： Hideyuki Niizato ,  Takayuki Inoue ,  Kiyokazu Mukai ,  Hitoshi Mimura

    IPC: B01D24/46 ,  C02F1/00 ,  E03B3/04 ,  E02F3/88 ,  E02B3/02 ,  C02F103/08

    CPC classification number: B01D24/4626 ,  B01D24/4621 ,  C02F1/004 ,  C02F2103/08 ,  C02F2201/008 ,  C02F2303/16 ,  E02B3/023 ,  E02F3/8866 ,  E03B3/04 ,  Y02W10/37

    Abstract: To provide a cleaning apparatus suitable for removing clogging substances trapped in a surface layer of a sand filtration layer. A cleaning apparatus equipped with drive wheels serving as a driving device configured to move across a surface of a sand filtration layer. A pump and a jet nozzle are provided as an agitation device configured to agitate a surface layer portion of the sand filtration layer only at a desired depth, and which blows the clogging substances upward into the seawater in a turbid water intake pit together with a filtration sand. A perforated pipe for suctioning turbid water, a pump, an ejector, and a discharge pipe for dilute turbid water are provided as a suction and discharge device configured to suction turbid water blown upward into seawater in the water intake pit by the agitation device, and discharge it to outside of the turbid water intake pit. Prevents clogging by performing a timely cleaning of the sand filtration layer, thereby making it possible to maintain a high-speed seawater infiltration rate for seawater. Impact on the surrounding environment is reduced, because the apparatus suctions turbid water containing clogging substances which is blown upward into the turbid water intake pit, and discharges it to outside of the system.

    Abstract translation: 提供一种适用于除去捕集在砂过滤层表层的堵塞物质的清洗装置。 一种配备有用作驱动装置的驱动轮的清洁装置，构造成移动穿过砂过滤层的表面。 提供泵和喷嘴作为搅拌装置，其仅在期望的深度搅拌砂过滤层的表层部分，并且将堵塞物质向上吹入混浊水进水口中的海水以及过滤 砂。 提供了一种用于吸入混浊水的多孔管，一个泵，一个喷射器和一个用于稀混浊水的排放管，作为吸入和排出装置，其被配置成通过搅拌装置吸入向上进入进水坑中的海水的混浊水， 将其排放到浑浊的进水口外面。 通过及时清洗砂过滤层，防止堵塞，可以保持海水的高速海水渗透率。 对周围环境的影响减小，因为装置吸入含有堵塞物质的混浊水，向上吹入混浊水进入坑，并将其排放到系统外部。

    Semiconductor device
    103.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08781433B2

    公开(公告)日：2014-07-15

    申请号：US13368380

    申请日：2012-02-08

    Applicant: Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue ,  Munehiro Kozuma

    Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue ,  Munehiro Kozuma

    IPC: H04B1/28

    CPC classification number: G06K19/07749 ,  G06K7/0008 ,  G06K19/0716 ,  G06K2017/0045

    Abstract: A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.

    Abstract translation: 半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路 由无线信号产生。 这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。 通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

    Semiconductor film, method for manufacturing the same, and power storage device
    104.
    发明授权
    Semiconductor film, method for manufacturing the same, and power storage device 有权
    半导体膜及其制造方法以及蓄电装置

    公开(公告)号：US08455044B2

    公开(公告)日：2013-06-04

    申请号：US13301020

    申请日：2011-11-21

    Applicant: Tomokazu Yokoi ,  Takayuki Inoue ,  Makoto Furuno

    Inventor： Tomokazu Yokoi ,  Takayuki Inoue ,  Makoto Furuno

    IPC: B05D5/12

    CPC classification number: H01L29/12 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/366 ,  H01M4/386

    Abstract: Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof. Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.

    Abstract translation: 提供了包括以高密度形成的硅微结构的半导体膜及其制造方法。 此外，提供了包括其密度被控制的硅微结构的半导体膜及其制造方法。 此外，提供了具有改善的充放电容量的蓄电装置。 使用其中在具有金属表面的基板上形成具有包括硅结构的硅层的半导体膜的制造方法。 控制由金属与硅之间的反应形成的硅化物层的厚度，从而控制在硅化物层和硅层之间的界面处形成的硅化物晶粒的晶粒尺寸，并且控制硅结构的形状。 这样的半导体膜可以应用于蓄电装置的电极。

    Semiconductor device
    107.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08111567B2

    公开(公告)日：2012-02-07

    申请号：US12850736

    申请日：2010-08-05

    Applicant: Takayuki Inoue ,  Yoshiyuki Kurokawa

    Inventor： Takayuki Inoue ,  Yoshiyuki Kurokawa

    IPC: G11C7/00

    CPC classification number: G11C5/141 ,  G11C5/142 ,  G11C29/70

    Abstract: An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.

    Abstract translation: 目的是提供一种具有存储器的半导体器件，其可以通过采用有利于使用备用存储单元的结构来有效地提高产量。 半导体器件包括具有存储单元和备用存储单元的存储单元阵列，连接到存储单元和备用存储单元的解码器，连接到解码器的数据保持电路以及向数据提供电力的电池 保持电路。 备用存储单元根据数据保持电路的输出进行工作。

    Image acquiring apparatus, image acquiring method, and image acquiring program
    108.
    发明授权
    Image acquiring apparatus, image acquiring method, and image acquiring program 有权
    图像获取装置，图像获取方法和图像获取程序

    公开(公告)号：US07978898B2

    公开(公告)日：2011-07-12

    申请号：US12857110

    申请日：2010-08-16

    Applicant: Shigeru Uchiyama ,  Takayuki Inoue ,  Masatoshi Okugawa ,  Jeremy Cooke

    Inventor： Shigeru Uchiyama ,  Takayuki Inoue ,  Masatoshi Okugawa ,  Jeremy Cooke

    IPC: G06K9/00

    CPC classification number: G02B21/367

    Abstract: In acquisition of a micro image of a sample by a micro image acquiring unit, when a plurality of image acquiring ranges are set for the sample as an object of image acquisition, a plurality of corresponding focus information are set, and furthermore, when a plurality of partial images acquired by scanning the sample by the micro image acquiring unit include a partial image including mixing of a plurality of image acquiring ranges, the focus information is switched in the middle of scanning of the partial image. With such a structure, even when a plurality of objects are contained in the sample, images of the respective objects can be preferably acquired. Thereby, an image acquiring apparatus, an image acquiring method, and an image acquiring program which are capable of preferably acquiring images of a plurality of objects are realized even when the plurality of objects are contained in a sample.

    Abstract translation: 在通过微图像获取单元获取样本的微图像时，当为样本设置多个图像采集范围作为图像获取对象时，设置多个对应的焦点信息，此外，当多个 通过由微图像获取单元扫描样本而获取的部分图像包括包括多个图像获取范围的混合的部分图像，在部分图像的扫描中间切换焦点信息。 利用这种结构，即使在样本中包含多个对象，也可以优选地获取各个对象的图像。 因此，即使当多个对象被包含在样本中时，也能够实现能够优选地获取多个对象的图像的图像获取装置，图像获取方法和图像获取程序。

    Clock signal generation circuit and semiconductor device
    109.
    发明授权
    Clock signal generation circuit and semiconductor device 有权
    时钟信号发生电路和半导体器件

    公开(公告)号：US07639058B2

    公开(公告)日：2009-12-29

    申请号：US12021843

    申请日：2008-01-29

    Applicant: Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue ,  Munehiro Kozuma

    Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue ,  Munehiro Kozuma

    IPC: G06F1/04 ,  H03K3/00

    CPC classification number: G06F7/68 ,  G06F1/025 ,  G06F1/04 ,  H04L7/033

    Abstract: The semiconductor device is provided with a clock signal generation circuit that includes a reference clock signal generation circuit which generates a first reference clock signal, a first counter circuit which counts the number of rising edges of the first reference clock signal by using the first reference clock signal and a synchronizing signal, a second counter circuit which counts the number of rising edges of the first reference clock signal by using an enumerated value of the first counter circuit, a first divider circuit which divides a frequency of the first reference clock signal by using the enumerated value of the first counter circuit and generates a second reference clock signal, and a second divider circuit which divides a frequency of the second reference clock signal and generates a clock signal.

    Abstract translation: 半导体器件设置有时钟信号产生电路，其包括产生第一参考时钟信号的参考时钟信号产生电路，第一计数器电路，通过使用第一参考时钟对第一参考时钟信号的上升沿进行计数 信号和同步信号;第二计数器电路，通过使用第一计数器电路的枚举值对第一参考时钟信号的上升沿数进行计数;第一除法器电路，其使用第一参考时钟信号的频率进行分频; 第一计数器电路的枚举值并产生第二参考时钟信号，以及第二除法器电路，其分频第二参考时钟信号的频率并产生时钟信号。

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