摘要:
Disclosed herein is an ion conductive polymer comprising a unit represented by Formula (1) below: —SO2[N−SO2(M+)]X1- (1) wherein X1 is an integer greater than 1, and M+ is H+ or Li+. Further disclosed is an imide monomer represented by Formula (A) below: Z1-SO2[N−SO2M+]Y-Z2 (A) wherein Y is an integer of 2 or greater, Z1 is OH, F, Cl, Br, I or NZ3Z4 (in which Z3 and Z4 are each independently H, M or SiMe3, and M is a metal element), Z2 is OH, F, Cl, Br, I or NZ3Z4 (in which Z3 and Z4 are each independently H, M or SiMe3, and M is a metal element), and M+ is H+ or Li+.
摘要:
A release resin composition that is excellent in thermal stability, for example, during extrusion molding and does not cause problems such as smoking and foaming during preparation of a compound product or extrusion molding and further does not contaminate metal rollers. The release resin composition can be formed into a release layer that does not cause migration of impurities to an adhesive layer being in direct contact with the release layer and therefore does not decrease the adhesive properties of the adhesive layer. The release resin composition includes a release agent (A) of which main component is a polymer compound having a weight average molecular weight of 10000 to 1000000 and containing an aliphatic group having 8 to 30 carbon atoms and includes a thermoplastic polymer (B) containing an olefin monomer and/or a polar monomer as a constitutional unit, wherein the amount of the release agent (A) is 0.1 to 20 parts by weight to 100 parts by weight of the thermoplastic polymer (B). The release agent (A) shows a 2% weight loss temperature in the range of 260° C. or higher but lower than 275° C. and a 5% weight loss temperature in the range of 275° C. or higher but lower than 330° C. in thermogravimetric analysis.
摘要:
A plating method is capable of preferentially precipitating a plated film fully and uniformly in trenches and via holes according to a mechanical and electrochemical process, and of easily forming a plated film having higher flatness surface without being affected by variations in the shape of trenches and via holes. The plating method includes a first plating process and a second plating process. The second plating process is performed by filling a plating solution between an anode and a substrate, with a porous member placed in the plating solution, repeatedly bringing the porous member and the substrate into and out of contact with each other, passing a current between the anode and the substrate while the porous member is being held in contact with the substrate.
摘要:
The present invention provides a plating apparatus for a substrate which can plate a substrate under uniform pressure without increasing a load to be applied while holding the entire surface of a porous member in contact with the surface, to be plated, of the substrate. The plating apparatus for a substrate, includes: a substrate holder for holding a substrate; a cathode unit having a seal member for abutting against and sealing, in a water-tight manner, a peripheral portion of a surface, to be plated, of the substrate held by the substrate holder, and a cathode electrode which is brought into contact with the substrate to supply current to the substrate. An anode which is vertically moveable is disposed in confronting relation to the surface, to be plated, of the substrate; a plating solution impregnated material is disposed between the anode and the surface, to be plated, of the substrate, the plating solution impregnated material being made of a water-retentive material; and a porous member is disposed between the plating solution impregnated material and the surface, to be plated, of the substrate. The plating solution impregnated material is constructed of a plurality of separate members.
摘要:
A lever switch is provided, in which an arrangement of a push button is fixed with respect to an operation of a rotary ring to realize improvement in operation. A lever switch includes: a first shaft projecting from a base of a control means of a mobile unit; a plurality of push buttons provided at a distal end of the first shaft; a fixing-supporting part which fixes and supports a plurality of the push buttons for preventing a plurality of the push buttons from rotating relatively to the first shaft; and a rotary ring which is provided in the middle of the first shaft and is rotatable separately from a plurality of the push buttons, wherein when the rotary ring is operated, the rotary ring is rotated around the first shaft on a condition that a plurality of the push buttons are fixed and supported being prevented from rotating.
摘要:
A plating apparatus can form a plated film having a more uniform thickness over an entire surface of a substrate and can securely fill interconnect recesses with the metal without forming voids in the embedded metal even when the substrate has a high sheet resistance in the surface. The plating apparatus includes a substrate holder for holding a substrate, a cathode portion including a cathode for contact with the substrate held by the substrate holder to feed electricity to the substrate, and an anode, partly or wholly having a high resistance, disposed opposite a surface of the substrate held by the substrate holder, wherein plating of the surface of the substrate is carried out while filling between the anode and the substrate held by the substrate holder with a plating solution.
摘要:
An image forming apparatus determines process items needed as exchanged components and an order of executing the process items needed for a plurality of kinds of exchanged components based on priority order information of the process items and causes a display unit to control a display for ordering to execute process items needed for the components according to the determined order of execution.
摘要:
A communication semiconductor integrated circuit device includes an RFVCO and a TXVCO and is formed over one semiconductor substrate, and has a first operation mode (idle mode) which does not perform transmission and reception, a second operation mode (warmup mode) which performs a preparation prior to the start of transmission or reception, and a third operation mode (transmission or reception mode) which performs transmission or reception. In the first operation mode, two oscillators are deactivated, and the operation of selecting a frequency band to be used in at least the TXVCO which generates a transmit signal, is performed in the second operation mode. In the communication semiconductor integrated circuit device, a high frequency signal generator which generates a signal having a desired frequency with an oscillation signal outputted from a crystal oscillator as a reference signal, a reception system circuit (RXC) including a frequency converter, and a transmission system circuit (TXC) including the TXVCO which generates the transmit signal, are respectively formed in different semiconductor regions isolated by insulators.
摘要:
An RF IC in which a PLL circuit including a loop filter is incorporated into a semiconductor chip is achieved without increasing power consumption or chip size. The RF IC includes a VCO capable of switching oscillation frequency bands, a variable frequency divider, a phase comparator, and a loop filter, which are contained in the PLL loop. A discrimination circuit discriminates a lead or lag in a phase of an output signal from the variable frequency divider against a reference signal and an automatic band selecting circuit generates a signal for switching the frequency bands of the VCO based on output from the discrimination circuit. While switching the frequency bands of the VCO by means of bisection algorithm, the RF IC detects an optimum frequency band, and adds offset to it to determine a final usable frequency band.
摘要:
Disclosed herein is an ion conductive polymer comprising a unit represented by Formula (1) below: —SO2[N−SO2(M+)]X1— (1) wherein X1 is an integer greater than 1, and M+ is H+ or Li+. Further disclosed is an imide monomer represented by Formula (A) below: Z1-SO2[N−SO2M+]Y-Z2 (A) wherein Y is an integer of 2 or greater, Z1 is OH, F, Cl, Br, I or NZ3Z4 (in which Z3 and Z4 are each independently H, M or SiMe3, and M is a metal element), Z2 is OH, F, Cl, Br, I or NZ3Z4 (in which Z3 and Z4 are each independently H, M or SiMe3, and M is a metal element), and M+ is H+ or Li+.