公开(公告)号：US20110316054A1

公开(公告)日：2011-12-29

申请号：US13152450

申请日：2011-06-03

申请人： Gary Fedder ,  Nathan Lazarus

发明人： Gary Fedder ,  Nathan Lazarus

IPC分类号： H01L27/092 ,  H01L21/02

CPC分类号： G01N27/4141 ,  B81B2201/0214 ,  B81C1/00246 ,  B81C2203/0714 ,  C23F1/20 ,  G01N27/226 ,  G01N27/4148 ,  H01L28/60

摘要： A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.

摘要翻译： 提供了一种用于制造电容式环境传感器的方法，其中传感器元件通过使用互补金属氧化物半导体（CMOS）制造方法集成在具有电子学的CMOS结构中。 还提供了例如通过该方法制造的环境传感器，以及使用通过该方法制造的环境传感器的测量系统。 所描述的方法包括蚀刻掉CMOS芯片中的一个金属层以形成空腔。 然后用环境敏感介电材料填充该空腔，以在由金属粘附层形成的板之间形成感测电容器，或者由CMOS结构的其它金属层形成的触点阵列。 这种方法在易于制造的系统中提供改进的感测能力。

公开(公告)号：US20110303953A1

公开(公告)日：2011-12-15

申请号：US13154692

申请日：2011-06-07

申请人： Koichiro KAMATA

发明人： Koichiro KAMATA

IPC分类号： H01L27/085 ,  H01L21/8232

CPC分类号： G01N27/4141 ,  H01L27/12 ,  H01L27/1225 ,  H01L29/66969

摘要： It is an object to provide a gas sensor which is formed by a simple manufacturing process. Another object is to provide a gas sensor whose manufacturing cost is reduced. A transistor which includes an oxide semiconductor layer in contact with a gas and which serves as a detector element of a gas sensor, and a transistor which includes an oxide semiconductor layer in contact with a film having a gas barrier property and which forms a detection circuit are formed over one substrate by the same process, whereby a gas sensor using these transistors may be formed.

摘要翻译： 本发明的目的是提供一种通过简单的制造工艺形成的气体传感器。 另一个目的是提供一种制造成本降低的气体传感器。 一种晶体管，包括与气体接触并用作气体传感器的检测器元件的氧化物半导体层，以及晶体管，其包括与具有阻气性的膜接触的氧化物半导体层，并形成检测电路 通过相同的工艺形成在一个衬底上，由此可以形成使用这些晶体管的气体传感器。

公开(公告)号：US20110147803A1

公开(公告)日：2011-06-23

申请号：US13002188

申请日：2009-05-04

申请人： Stefan Henneck ,  Ralf Schmidt

发明人： Stefan Henneck ,  Ralf Schmidt

IPC分类号： H01L23/58 ,  H01L21/00

CPC分类号： G01N27/4141

摘要： A sensor element is described that includes at least one semiconductor component having a gas-sensitive layer which is attached to a substrate by the flip-chip method, the gas-sensitive layer facing the substrate and a supply arrangement being provided to supply a gas to be examined to the gas-sensitive layer. The semiconductor component is enclosed in a casing. Also described is a method for manufacturing the sensor element, in which a semiconductor component having a gas-sensitive layer is attached by the flip-chip method to a substrate in such a way that the gas-sensitive layer faces the substrate. After that, the casing is applied by a plasma sputtering method, in particular an atmospheric plasma sputtering method. Finally, a use of the sensor element in the exhaust system of an internal combustion engine is also described.

摘要翻译： 描述了一种传感器元件，其包括至少一个半导体部件，其具有通过倒装芯片方法附接到基板的气敏层，面向基板的气体敏感层和供应装置，以将气体供应到 检查气敏层。 半导体部件被封装在壳体中。 还描述了一种用于制造传感器元件的方法，其中通过倒装芯片法将具有气敏层的半导体部件以气敏层面向基板的方式附着到基板上。 之后，通过等离子溅射法，特别是大气等离子体溅射法施加套管。 最后，还描述了在内燃机的排气系统中使用传感器元件。

公开(公告)号：US07963148B2

公开(公告)日：2011-06-21

申请号：US12230662

申请日：2008-09-03

申请人： Wei-Long Liu ,  Wen-Jauh Chen ,  Shu-Huei Hsieh

发明人： Wei-Long Liu ,  Wen-Jauh Chen ,  Shu-Huei Hsieh

IPC分类号： G01N7/00

CPC分类号： G01N27/4141

摘要： The present invention discloses a gas sensor made of field effect transistor based on ZnO nanowires (ZnO-FET) which operates according to the principle of metal-oxide-semiconductor field effect transistor (MOSFET) and has a charge carrier channel made of ZnO nanowires between source and drain. The gas sensor device disclosed in the present invention has three electrodes-gate, source and drain, so that it is different from the known gas sensor device which has only two electrodes-cathode and anode. The ZnO nanowires as charge channel in the gas sensor device of the present invention is an n-type semiconductor with high specific surface area, and its electric resistance can be controlled by the gate bias, so that the capability of the present device for sensing gas can be largely promoted.

摘要翻译： 本发明公开了一种由基于ZnO纳米线（ZnO-FET）的场效应晶体管制成的气体传感器，其工作原理是根据金属氧化物半导体场效应晶体管（MOSFET）的原理，并具有由ZnO纳米线构成的电荷载流子， 来源和流失。 本发明公开的气体传感器装置具有三个电极 - 栅极，源极和漏极，因此它与仅具有两个电极 - 阴极和阳极的已知气体传感器装置不同。 本发明的气体传感器装置中的ZnO纳米线作为电荷通道是具有高比表面积的n型半导体，并且其电阻可以通过栅极偏置来控制，从而本装置用于感测气体的能力 可以大幅提升。

公开(公告)号：US20110124113A1

公开(公告)日：2011-05-26

申请号：US12626252

申请日：2009-11-25

申请人： Abdul-Majeed Azad ,  Desikan Sundararajan

发明人： Abdul-Majeed Azad ,  Desikan Sundararajan

IPC分类号： G01N33/00 ,  G01N27/00

CPC分类号： G01N27/4141 ,  G01N21/33 ,  G01N27/12 ,  G01N27/125 ,  G01N27/126 ,  G01N27/403 ,  G01N33/2835 ,  G01N33/5438 ,  Y10T436/21 ,  Y10T436/216

摘要： Embodiments provide a method for detecting an unsaturated compound, the method comprising monitoring change in electrical properties of substances such as halides of copper that reacts or interacts with unsaturated compounds such as acetylene. Other embodiments provide a sensor for detecting acetylene gas comprising a substrate having a surface, electrodes in electrical communication with said surface, and a sensor layer formed of metal halide.

摘要翻译： 实施方案提供了一种用于检测不饱和化合物的方法，所述方法包括监测诸如乙炔的不饱和化合物反应或相互作用的物质例如铜的卤化物的电性质的变化。 其他实施例提供一种用于检测乙炔气体的传感器，包括具有表面的基底，与所述表面电连通的电极和由金属卤化物形成的传感器层。

公开(公告)号：US07868354B2

公开(公告)日：2011-01-11

申请号：US11937375

申请日：2007-11-08

申请人： Michael A. Garcia ,  Scott D. Wolter ,  April S. Brown ,  Joseph Bonaventura ,  Thomas F. Kuech

发明人： Michael A. Garcia ,  Scott D. Wolter ,  April S. Brown ,  Joseph Bonaventura ,  Thomas F. Kuech

IPC分类号： H01L31/119

CPC分类号： G01N33/0037 ,  G01N27/4141 ,  Y02A50/245

摘要： GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e.g., SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid. Electrical contact pads are preferably provided in some embodiments so as to be in electrical contact with the source and drain contact regions, respectively. Electrical leads may thus be connected to the contact pads. According to other embodiments, the NO detection device will include a metalloporphyrin adsorbed on the GaN gate region.

摘要翻译： GaN基异质结场效应晶体管（HFET）传感器具有用作伪栅极的工程化功能表面，在分析物捕获时修改漏极电流。 在一些实施例中，提供了用于感测含NO流体中的一氧化氮（NO）物质的装置，其包括半导体结构，该半导体结构包括一对分离的GaN层和介于GaN层之间并与GaN层接触的AlGaN层。 源极和漏极接触区域形成在GaN层之一上，并且在源极和漏极接触区域之间形成暴露的GaN栅极区域以与含NO的流体接触。 最优选地，半导体结构形成在合适的衬底（例如，SiC）上。 可以提供绝缘层以覆盖半导体结构。 绝缘层将具有形成在其中的窗口，以便保持GaN栅极区域的曝光，从而允许栅极区域与含NO的流体接触。 在一些实施例中，电接触焊盘优选地设置成分别与源极和漏极接触区域电接触。 因此，电引线可以连接到接触垫。 根据其它实施方案，NO检测装置将包括吸附在GaN栅极区上的金属卟啉。

公开(公告)号：US20100187109A1

公开(公告)日：2010-07-29

申请号：US12563316

申请日：2009-09-21

申请人： Jin MIZUGUCHI

发明人： Jin MIZUGUCHI

IPC分类号： G01N27/26

CPC分类号： G01N27/126 ,  G01N21/783 ,  G01N27/4141 ,  G01N33/005 ,  Y02E60/36

摘要： The present invention provides a low-cost hydrogen gas sensor, which exhibits high sensory selectivity for protons and operates at room temperature, and can also provide a highly sensitive sensor capable of fulfilling the important functions of detecting hydrogen gas and preventing leakage accidents in production plants that use hydrogen gas as a carrier, in hydrogen gas storage facilities, and in so-called fuel cells that use hydrogen gas as an energy source. In addition, the sensor is also effective as an acid sensor for hydrofluoric acid and the like.The present invention relates to an acid and hydrogen gas sensor, wherein protons are brought into contact with an organic compound containing an introduced pyridine ring (such as pyridine-DPP), and the change in electrical resistivity, photoconductivity, or optical absorption band for the organic compound that accompanies proton addition is detected.

摘要翻译： 本发明提供一种低成本氢气传感器，其对质子显示出高感觉选择性并在室温下操作，并且还可以提供能够实现检测氢气和防止生产工厂中的泄漏事故的重要功能的高灵敏度传感器 在氢气储存设施中使用氢气作为载体，在使用氢气作为能源的所谓燃料电池中。 此外，该传感器作为氢氟酸等的酸传感器也是有效的。 本发明涉及一种酸和氢气传感器，其中质子与含有引入的吡啶环的有机化合物（例如吡啶-DPP）接触，并且电阻率，光电导率或光吸收带的变化用于 检测伴随质子添加的有机化合物。

公开(公告)号：US20100090255A1

公开(公告)日：2010-04-15

申请号：US12584975

申请日：2009-09-14

申请人： Richard FIX ,  Andreas KRAUSS

发明人： Richard FIX ,  Andreas KRAUSS

IPC分类号： H01L29/78

CPC分类号： G01N27/4141

摘要： An electronic component includes at least one electrode and at least one gas-sensitive region on a substrate. The gas-sensitive region is coated by at least one electrically conductive, gas-sensitive layer, and the electrode contacts the gas-sensitive layer. At least a part of the at least one electrode covers a part of the gas-sensitive region.

摘要翻译： 电子部件包括至少一个电极和至少一个气体敏感区域。 气体敏感区域被至少一个导电气敏层涂覆，电极与气体敏感层接触。 所述至少一个电极的至少一部分覆盖所述气体敏感区域的一部分。

公开(公告)号：US20070166832A1

公开(公告)日：2007-07-19

申请号：US11687872

申请日：2007-03-19

申请人： Vinayak Tilak ,  Kevin Matocha ,  Peter Sandvik

发明人： Vinayak Tilak ,  Kevin Matocha ,  Peter Sandvik

IPC分类号： G01N27/00

CPC分类号： G01N27/4141 ,  Y10T436/218

摘要： According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.

摘要翻译： 根据一些实施例，基于电子学的物理气体传感器包括半导体层，并且至少一个触点电耦合到半导体层。 还提供了具有当栅极暴露于分析物时变化的性质的催化栅极和来自电压源的可变偏压。

公开(公告)号：US20060270053A1

公开(公告)日：2006-11-30

申请号：US11137845

申请日：2005-05-26

申请人： Vinayak Tilak ,  Kevin Matocha ,  Peter Sandvik

发明人： Vinayak Tilak ,  Kevin Matocha ,  Peter Sandvik

IPC分类号： G01N33/00 ,  G01N25/26

CPC分类号： G01N27/4141 ,  Y10T436/218

摘要： According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.

摘要翻译： 根据一些实施例，基于电子学的物理气体传感器包括半导体层，并且至少一个触点电耦合到半导体层。 还提供了具有当栅极暴露于分析物时变化的性质的催化栅极和来自电压源的可变偏压。