公开(公告)号：US20070103029A1

公开(公告)日：2007-05-10

申请号：US10558469

申请日：2004-06-02

申请人： Gary Fedder ,  Altug Oz

发明人： Gary Fedder ,  Altug Oz

IPC分类号： H02N10/00 ,  F01B29/10 ,  F02G1/04

CPC分类号： H02N10/00 ,  B81B3/0024 ,  B81B7/0003 ,  B81B2201/038 ,  H01H1/0094 ,  H01H2061/006 ,  Y10S977/724 ,  Y10S977/725

摘要： The present disclosure is broadly directed to a method for designing new MEMS micro-movers, particularly suited for, but not limited to, CMOS fabrication techniques, that are capable of large lateral displacement for tuning capacitors, fabricating capacitors, self-assembly of small gaps in CMOS processes, fabricating latching structures and other applications where lateral micro-positioning on the order of up to 10 μm, or greater, is desired. Principles of self-assembly and electro-thermal actuation are used for designing micro-movers. In self-assembly, motion is induced in specific beams by designing a lateral effective residual stress gradient within the beams. The lateral residual stress gradient arises from purposefully offsetting certain layers of one material versus another material. For example, lower metal layers may be side by side with dielectric layers, both of which are positioned beneath a top metal layer of a CMOS-MEMS beam. In electro-thermal actuation, motion is induced in specific beams by designing a lateral gradient of temperature coefficient of expansion (TCE) within the beams. The lateral TCE gradient is achieved in the same manner as with self-assembly, by purposefully offsetting the lower metal layers with layers of dielectric with respect to the top metal layer of a CMOS-MEMS beam. A heater resistor, usually made from a CMOS polysilicon layer, is embedded into the beam or into an adjacent assembly to heat the beam. When heated, the TCE gradient will cause a stress gradient in the beam, resulting in the electro-thermal actuation. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

摘要翻译： 本公开广泛地涉及用于设计新的MEMS微动幅器的方法，其特别适用于但不限于CMOS制造技术，其能够用于调谐电容器的大横向位移，制造电容器，小间隙的自组装 在CMOS工艺中，制造闭锁结构和其它需要侧向微定位大约为10um或更大的应用。 自组装和电热驱动的原理用于设计微动员。 在自组装中，通过在梁内设计横向有效残余应力梯度，在特定梁中引起运动。 侧向残余应力梯度是由有目的地抵消一种材料的某些层与另一种材料相抵消的。 例如，下金属层可以与电介质层并排，它们均位于CMOS-MEMS光束的顶部金属层的下方。 在电热驱动中，通过设计横梁内的温度膨胀系数（TCE）的横向梯度，在特定光束中感应运动。 横向TCE梯度以与自组装相同的方式实现，通过相对于CMOS-MEMS光束的顶部金属层有目的地抵消具有电介质层的下部金属层。 通常由CMOS多晶硅层制成的加热电阻器被嵌入光束或相邻组件中以加热光束。 加热时，TCE梯度将导致光束中的应力梯度，导致电热致动。 由于管理摘要的规则，本摘要不应用于解释索赔。

公开(公告)号：US20050276726A1

公开(公告)日：2005-12-15

申请号：US11136763

申请日：2005-05-25

申请人： Robert McGill ,  Ioana Voiculescu ,  Gary Fedder

发明人： Robert McGill ,  Ioana Voiculescu ,  Gary Fedder

IPC分类号： G01N27/00 ,  G01N27/16

CPC分类号： G01N29/036 ,  G01N2291/0256 ,  G01N2291/0257

摘要： A microelectro-mechanical chemical sensor includes an active cantilever beam having a chemically selective material layer disposed thereon and at least one, preferably two, resistors with the resistance corresponding to the cantilever beam deflection. The sensor also has at least two, and preferably four, auxiliary cantilever beams adjacent to the active cantilever and attached to the same substrate, each having a piezoresistor disposed thereon. The piezoresistors are elements of a Wheatstone bridge, and the Wheatstone bridge output indicates the amount of a predetermined target chemical sorbed by the chemically selective material layer. The sensor is electrostatically actuated in order to monitor the resonant frequency.

摘要翻译： 微电子机械化学传感器包括具有设置在其上的化学选择性材料层的主动悬臂梁和至少一个，优选两个电阻器，其电阻对应于悬臂梁偏转。 传感器还具有与主动悬臂相邻并附接到相同基板的至少两个，优选为四个辅助悬臂梁，每个悬臂梁上设置有压电电阻器。 压电电阻是惠斯通电桥的元件，惠斯通电桥输出表示由化学选择性材料层吸收的预定目标化学物质的量。 为了监测谐振频率，传感器被静电驱动。

公开(公告)号：US08471304B2

公开(公告)日：2013-06-25

申请号：US13152450

申请日：2011-06-03

申请人： Gary Fedder ,  Nathan Lazarus

发明人： Gary Fedder ,  Nathan Lazarus

IPC分类号： H01L29/66

CPC分类号： G01N27/4141 ,  B81B2201/0214 ,  B81C1/00246 ,  B81C2203/0714 ,  C23F1/20 ,  G01N27/226 ,  G01N27/4148 ,  H01L28/60

摘要： A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.

摘要翻译： 提供了一种用于制造电容式环境传感器的方法，其中传感器元件通过使用互补金属氧化物半导体（CMOS）制造方法集成在具有电子学的CMOS结构中。 还提供了例如通过该方法制造的环境传感器，以及使用通过该方法制造的环境传感器的测量系统。 所描述的方法包括蚀刻掉CMOS芯片中的一个金属层以形成空腔。 然后用环境敏感介电材料填充该空腔，以在由金属粘附层形成的板之间形成感测电容器，或者由CMOS结构的其它金属层形成的触点阵列。 这种方法在易于制造的系统中提供改进的感测能力。

公开(公告)号：US08410562B2

公开(公告)日：2013-04-02

申请号：US13010954

申请日：2011-01-21

申请人： Nathan Lazarus ,  Gary Fedder ,  Sarah Bedair ,  Chiung Lo

发明人： Nathan Lazarus ,  Gary Fedder ,  Sarah Bedair ,  Chiung Lo

IPC分类号： H01L27/14

CPC分类号： H01L28/40 ,  G01N27/227

摘要： A capacitive chemical sensor, along with methods of making and using the sensor are provided. The sensors described herein eliminate undesirable capacitance by etching away the substrate underneath the capacitive chemical sensor, eliminating most of the substrate capacitance and making changes in the chemical-sensitive layer capacitance easier to detect.

摘要翻译： 提供电容化学传感器，以及制造和使用传感器的方法。 本文所述的传感器通过蚀刻掉电容化学传感器下面的衬底来消除不需要的电容，从而消除了大部分衬底电容，并使化学敏感层电容的变化更易于检测。

公开(公告)号：US20110316054A1

公开(公告)日：2011-12-29

申请号：US13152450

申请日：2011-06-03

申请人： Gary Fedder ,  Nathan Lazarus

发明人： Gary Fedder ,  Nathan Lazarus

IPC分类号： H01L27/092 ,  H01L21/02

CPC分类号： G01N27/4141 ,  B81B2201/0214 ,  B81C1/00246 ,  B81C2203/0714 ,  C23F1/20 ,  G01N27/226 ,  G01N27/4148 ,  H01L28/60

摘要： A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.

摘要翻译： 提供了一种用于制造电容式环境传感器的方法，其中传感器元件通过使用互补金属氧化物半导体（CMOS）制造方法集成在具有电子学的CMOS结构中。 还提供了例如通过该方法制造的环境传感器，以及使用通过该方法制造的环境传感器的测量系统。 所描述的方法包括蚀刻掉CMOS芯片中的一个金属层以形成空腔。 然后用环境敏感介电材料填充该空腔，以在由金属粘附层形成的板之间形成感测电容器，或者由CMOS结构的其它金属层形成的触点阵列。 这种方法在易于制造的系统中提供改进的感测能力。

公开(公告)号：US20110180884A1

公开(公告)日：2011-07-28

申请号：US13010954

申请日：2011-01-21

申请人： Nathan Lazarus ,  Gary Fedder ,  Sarah Bedair ,  Chiung Lo

发明人： Nathan Lazarus ,  Gary Fedder ,  Sarah Bedair ,  Chiung Lo

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： H01L28/40 ,  G01N27/227

摘要： A capacitive chemical sensor, along with methods of making and using the sensor are provided. The sensors described herein eliminate undesirable capacitance by etching away the substrate underneath the capacitive chemical sensor, eliminating most of the substrate capacitance and making changes in the chemical-sensitive layer capacitance easier to detect.

摘要翻译： 提供电容化学传感器，以及制造和使用传感器的方法。 本文所述的传感器通过蚀刻掉电容化学传感器下面的衬底来消除不需要的电容，从而消除了大部分衬底电容，并使化学敏感层电容的变化更易于检测。