公开(公告)号：US20080291992A1

公开(公告)日：2008-11-27

申请号：US11752440

申请日：2007-05-23

Applicant: Yih-Ming Tsuie ,  Ming-Luen Liou ,  Chien-Huei Lin ,  Chih-Hung Lin ,  Wei-Tsen Lin

Inventor： Yih-Ming Tsuie ,  Ming-Luen Liou ,  Chien-Huei Lin ,  Chih-Hung Lin ,  Wei-Tsen Lin

IPC: H04B1/12 ,  H04B1/66 ,  H04B3/04

CPC classification number: H04L27/38 ,  H04L2027/0046 ,  H04L2027/0081

Abstract: A communication system and a method which can reduce the effect of burst noise. The communication system comprises a controllable oscillator, a mixer, a decision circuit, a comparator, a loop filter, and a controller. The controllable oscillator generates an oscillating signal. The mixer coupled to the controllable receives input data and mixes the input data with the oscillating signal. The decision circuit receives the mixed input data and generates an estimated symbol. The comparator generates a decision error between the estimated symbol and the mixed input data. The loop filter coupled to the controllable oscillator filters the decision error, and generates a filtered decision error, and the controllable oscillator generates the oscillating signal according to the filtered decision error. The controller reduces a bandwidth of the loop filter according to the decision error.

Abstract translation: 一种可以减少突发噪声影响的通信系统和方法。 通信系统包括可控振荡器，混频器，判定电路，比较器，环路滤波器和控制器。 可控振荡器产生振荡信号。 耦合到可控制器的混频器接收输入数据并将输入数据与振荡信号混合。 判定电路接收混合输入数据并生成估计符号。 比较器在估计符号和混合输入数据之间产生判定误差。 耦合到可控振荡器的环路滤波器对决策误差进行滤波，并产生滤波决策误差，并且可控振荡器根据滤波决策误差产生振荡信号。 控制器根据决策误差降低环路滤波器的带宽。

公开(公告)号：US20080129505A1

公开(公告)日：2008-06-05

申请号：US11752309

申请日：2007-05-23

Applicant: Chih-Hung Lin ,  Chia-Jen Yu ,  Jiunn-Tsair Chen

Inventor： Chih-Hung Lin ,  Chia-Jen Yu ,  Jiunn-Tsair Chen

IPC: G08B13/14

CPC classification number: G06K7/0008 ,  H04L7/042

Abstract: A method and a system for reading radio frequency identification (RFID) tags are provided. The method includes the following steps. First, receive a tag signal from the RFID tag. Recover a data clock rate from the tag signal according to statistics of pulse lengths of the tag signal. Next, determine a frame synchronization point of a data frame following a preamble in the tag signal by a signal correlation between the preamble and a predetermined signal pattern according to the data clock rate. Finally, decode the data frame by using an adaptive Viterbi algorithm on an extended trellis diagram. The extended trellis diagram includes a plurality of nodes and a plurality of branches connecting the nodes. The nodes and the branches are arranged according to the modulation scheme of the data frame and possible variations of the data clock rate.

Abstract translation: 提供了一种用于读取射频识别（RFID）标签的方法和系统。 该方法包括以下步骤。 首先，从RFID标签接收标签信号。 根据标签信号的脉冲长度的统计，从标签信号中恢复数据时钟速率。 接下来，根据数据时钟速率，通过前导码和预定信号模式之间的信号相关来确定标签信号中的前导码之后的数据帧的帧同步点。 最后，通过在扩展网格图上使用自适应维特比算法对数据帧进行解码。 扩展网格图包括多个节点和连接节点的多个分支。 节点和分支根据数据帧的调制方案和数据时钟速率的可能变化进行排列。

公开(公告)号：US20080122789A1

公开(公告)日：2008-05-29

申请号：US11624058

申请日：2007-01-17

Applicant: Tzu-Chiang Shih ,  Chih-Hung Lin

Inventor： Tzu-Chiang Shih ,  Chih-Hung Lin

IPC: G06F3/033

CPC classification number: G06F3/0416 ,  G06F3/0383

Abstract: Present invention provides a pointing device with a resolution-setting hotkey and a setting method thereof. The pointing device comprises a resolution-setting hotkey, a microprocessor and an optical sensor. The present pointing device has a default x-axis resolution and a default y-axis resolution and they are of the same value. By pressing the hotkey, a resolution-adjusting signal is generated to make the x-axis resolution is different from the y-axis resolution.

Abstract translation: 本发明提供一种具有分辨率设定热键的指示装置及其设定方法。 指向装置包括分辨率设置热键，微处理器和光学传感器。 当前指针设备具有默认的x轴分辨率和默认的y轴分辨率，它们具有相同的值。 通过按热键，生成分辨率调整信号，使x轴分辨率与y轴分辨率不同。

公开(公告)号：US20080050979A1

公开(公告)日：2008-02-28

申请号：US11624009

申请日：2007-01-17

Applicant: Hsiao-Lung Chiang ,  Chih-Hung Lin

Inventor： Hsiao-Lung Chiang ,  Chih-Hung Lin

IPC: H01R24/00

CPC classification number: H01R13/6205 ,  G06F1/1632 ,  G06F3/03543 ,  H01R24/62 ,  H01R2201/04 ,  H01R2201/06

Abstract: A connector is provided for coupling a computer peripheral device with a RJ11 or RJ45 data communication socket. The connector includes a first connecting part and a second first connecting part. The first connecting part has a shape mating with said data communication socket. The second connecting part includes a magnetic element such that the connector is attachable onto said computer peripheral device.

Abstract translation: 提供一个连接器，用于将计算机外围设备与RJ11或RJ45数据通信插座相连接。 连接器包括第一连接部和第二连接部。 第一连接部件具有与所述数据通信插座配合的形状。 第二连接部分包括磁性元件，使得连接器可附接到所述计算机外围设备上。

公开(公告)号：US07244975B2

公开(公告)日：2007-07-17

申请号：US11160657

申请日：2005-07-05

Applicant: Anchor Chen ,  Chih-Hung Lin ,  Hwi-Huang Chen ,  Jih-Wei Liou ,  Chin-Hung Liu ,  Ming-Tsung Tung ,  Chien-Ming Lin ,  Jung-Ching Chen

Inventor： Anchor Chen ,  Chih-Hung Lin ,  Hwi-Huang Chen ,  Jih-Wei Liou ,  Chin-Hung Liu ,  Ming-Tsung Tung ,  Chien-Ming Lin ,  Jung-Ching Chen

IPC: H01L27/10 ,  H01L29/739 ,  H01L29/73 ,  H01L29/76 ,  H01L29/94

CPC classification number: H01L29/0692 ,  H01L29/0638 ,  H01L29/1041 ,  H01L29/7833

Abstract: A high-voltage device structure includes a high-voltage device disposed on a semiconductor substrate. The semiconductor includes an active region and an isolation region, and the high-voltage device is disposed in the active region. The high-voltage device structure includes a source diffusion region of a first conductive type, a drain region of the first conductive type, and a gate longer than the source diffusion region and the drain diffusion region so as to form spare regions on both sides of the gate. The isolation region is outside the active region and surrounds the active region. In the isolation region, an isolation ion implantation region of a second conductive type and an extended ion implantation region are disposed to prevent parasitic current from being generating between the source diffusion region and the drain diffusion region.

Abstract translation: 高压器件结构包括设置在半导体衬底上的高电压器件。 半导体包括有源区和隔离区，高压器件设置在有源区中。 高电压器件结构包括第一导电类型的源极扩散区域，第一导电类型的漏极区域和比源极扩散区域和漏极扩散区域更长的栅极，以在第二导电类型的两侧形成备用区域 大门。 隔离区域在有源区域之外并且围绕有源区域。 在隔离区域中，设置第二导电型隔离离子注入区域和延伸离子注入区域，以防止在源极扩散区域和漏极扩散区域之间产生寄生电流。

公开(公告)号：US20070125173A1

公开(公告)日：2007-06-07

申请号：US11365878

申请日：2006-03-02

Applicant: Chih-Hung Lin ,  Zhi-Hong Zhu ,  Yung-Jin Wu ,  Tung-Wu Lu ,  Shih-Hsiang Liu

Inventor： Chih-Hung Lin ,  Zhi-Hong Zhu ,  Yung-Jin Wu ,  Tung-Wu Lu ,  Shih-Hsiang Liu

IPC: G01P15/00

CPC classification number: G01C21/165 ,  Y10T74/2028

Abstract: An ergonomic inertial positioning system comprises a motion sensor, an angle sensor, and a processor. The motion sensor detects movement of an object. The angle sensor detects angle variation of the heading of the object. The processor determines motion status of the object based on detected data provided by the motion sensor and the angle sensor, and calculates displacement of the object utilizing the detected angle variation thereof based on the motion status.

Abstract translation: 符合人体工程学的惯性定位系统包括运动传感器，角度传感器和处理器。 运动传感器检测物体的移动。 角度传感器检测物体的航向的角度变化。 处理器基于由运动传感器和角度传感器提供的检测数据来确定对象的运动状态，并且基于运动状态来利用其检测到的角度变化来计算物体的位移。

公开(公告)号：US06521487B1

公开(公告)日：2003-02-18

申请号：US09683248

申请日：2001-12-05

Applicant: Yen-Chang Chen ,  Chih-Hung Lin

Inventor： Yen-Chang Chen ,  Chih-Hung Lin

IPC: H01L21332

CPC classification number: H01L29/66393 ,  H01L27/0617 ,  H01L27/0817

Abstract: A semiconductor substrate has at least one active area and a STI surrounding the active area. An N-well and an adjacent P-well are formed in the active area. A dummy gate is formed atop the border between the N-well and the P-well, while simultaneously forming gates for other MOS transistors on the semiconductor substrate. A spacer is formed on the periphery of each gate. Finally, an N-type ion implantation process and a P-type ion implantation process are performed to form a cathode and an anode for the silicon controlled rectifier device in the P-well and the N-well between the STI and the dummy gate.

Abstract translation: 半导体衬底具有至少一个有源区和围绕有源区的STI。 在有源区域中形成N阱和相邻的P阱。 在N阱和P阱之间的边界顶部形成虚拟栅极，同时在半导体衬底上形成用于其它MOS晶体管的栅极。 在每个栅极的周围形成间隔物。 最后，进行N型离子注入工艺和P型离子注入工艺，以形成P阱中的可控硅整流器件的阴极和阳极，以及在STI和伪栅之间的N阱中形成阴极和阳极。

公开(公告)号：US06380695B1

公开(公告)日：2002-04-30

申请号：US09729268

申请日：2000-12-05

Applicant: Chih-Hung Lin ,  Jung Chan Hsieh

Inventor： Chih-Hung Lin ,  Jung Chan Hsieh

IPC: G05F100

CPC classification number: H02M7/5381 ,  H05B41/2824 ,  H05B41/3927

Abstract: A driving device for a fluorescent tube has a high frequency oscillator which outputs a high frequency AC signal. A pulse width modulator is connected to the high frequency oscillator for outputting a PWM harmonic frequency signal. A first power switch is connected to the pulse width modulator for being turned off during a positive half-cycle of the PWM harmonic frequency signal and being turned on during a negative half-cycle of the PWM harmonic frequency signal. A second power switch is connected to the pulse width modulator for being turned on during the positive half-cycle of the PWM harmonic frequency signal and being turned off during the negative half-cycle of the PWM harmonic frequency signal. A piezoelectric transformer includes a primary winding having two input terminals connected to the first power switch and the second power switch, respectively, and a center terminal connected to the output terminal of the pulse width modulator.

Abstract translation: 用于荧光管的驱动装置具有输出高频AC信号的高频振荡器。 脉冲宽度调制器连接到高频振荡器，用于输出PWM谐波频率信号。 第一电源开关连接到脉宽调制器，在PWM谐波频率信号的正半周期期间被关断，并且在PWM谐波频率信号的负半周期期间导通。 第二电源开关连接到脉宽调制器，在PWM谐波频率信号的正半周期期间导通，并在PWM谐波频率信号的负半周期期间关断。 压电变压器包括分别具有连接到第一电源开关和第二电源开关的两个输入端子的初级绕组和连接到脉冲宽度调制器的输出端子的中心端子。

公开(公告)号：US06304358B1

公开(公告)日：2001-10-16

申请号：US09536220

申请日：2000-03-27

Applicant: Chih-hung Lin ,  Yi-Yi Ho

Inventor： Chih-hung Lin ,  Yi-Yi Ho

IPC: G02B2608

CPC classification number: H04N1/1026 ,  H04N1/1017 ,  H04N1/193 ,  H04N2201/0418

Abstract: A reflective/transmissive scanner having a transmissive mode light source that is synchronously moved with the image-retrieving device. The scanner is provided with a scanner body having an upper surface with slots formed therethrough and a first transparent plate disposed in an aperture in the upper surface of the scanner body on which an object to be scanned is placed. A second transparent plate is provided in the lower surface of the scanner lid, corresponding slots being formed in the second transparent plate. A first support frame is disposed within the scanner body, with a reflective light source and an image retrieving device disposed thereupon, and a second support frame is disposed within the scanner lid, with a transmissive mode light source disposed thereupon. When the scanner lid is in a closed position, the first support frame and the second support frame are physically engaged through the slots, allowing the alignment between the transmissive mode light source and the image-retrieving device to be synchronously maintained.

Abstract translation: 具有与图像检索装置同步移动的透射模式光源的反射/透射扫描器。 扫描仪设置有扫描器主体，其具有通过其形成的狭缝的上表面和设置在扫描器主体的上表面中的孔中的第一透明板，待扫描物体放置在该孔的上方。 第二透明板设置在扫描器盖的下表面中，相应的槽形成在第二透明板中。 第一支撑框架设置在扫描器主体内，反射光源和设置在其上的图像检索装置，并且第二支撑框架设置在扫描仪盖内，其上设置有透射模式光源。 当扫描仪盖处于关闭位置时，第一支撑框架和第二支撑框架通过狭槽物理接合，从而允许透射模式光源与图像检索装置之间的对准被同步地保持。

公开(公告)号：US06249022B1

公开(公告)日：2001-06-19

申请号：US09425395

申请日：1999-10-22

Applicant: Chih-Hung Lin ,  Robin Lee

Inventor： Chih-Hung Lin ,  Robin Lee

IPC: H01L218228

CPC classification number: H01L29/66833 ,  H01L21/28282 ,  H01L29/7923

Abstract: A method for fabricating a flash memory cell is described. A conformal ultra thin oxide layer is formed on a substrate having a trench formed therein, followed by forming silicon nitride spacers on the portion of the ultra thin oxide layer which covers the sidewalls of the trench. The silicon nitride spacers are separated into a first silicon nitride spacer on the right sidewall and a second silicon nitride spacer on the left sidewall. Thereafter, a gate oxide layer is formed on the silicon nitride spacers, followed by forming a polysilicon gate on the gate oxide layer in the substrate. Subsequently, a source/drain region is formed on both sides of the polysilicon gate in the substrate.

Abstract translation: 描述了一种制造闪存单元的方法。 在其上形成有沟槽的衬底上形成共形的超薄氧化物层，然后在覆盖沟槽的侧壁的超薄氧化物层的部分上形成氮化硅间隔物。 氮化硅间隔物被分成右侧壁上的第一氮化硅间隔物和左侧壁上的第二氮化硅间隔物。 此后，在氮化硅间隔物上形成栅极氧化层，随后在衬底的栅极氧化物层上形成多晶硅栅极。 随后，在衬底中的多晶硅栅极的两侧上形成源/漏区。