公开(公告)号：US20100093176A1

公开(公告)日：2010-04-15

申请号：US12536805

申请日：2009-08-06

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/306

CPC classification number: H01L21/32139 ,  H01L21/31111 ,  H01L21/31133

Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a material layer on a substrate; forming a sacrificial layer on the material layer, where the material layer and sacrificial layer each as a thickness less than 100 angstrom; forming a patterned photoresist layer on the sacrificial layer; applying a first wet etching process to etch the sacrificial layer to form a patterned sacrificial layer using the patterned photoresist layer as a mask; applying a second wet etching process to etch the first material layer; and applying a third wet etching process to remove the patterned sacrificial layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基板上形成材料层; 在材料层上形成牺牲层，其中材料层和牺牲层各自的厚度小于100埃; 在所述牺牲层上形成图案化的光致抗蚀剂层; 施加第一湿蚀刻工艺以蚀刻牺牲层以使用图案化的光致抗蚀剂层作为掩模形成图案化的牺牲层; 施加第二湿蚀刻工艺以蚀刻第一材料层; 以及施加第三湿蚀刻工艺以去除图案化的牺牲层。

公开(公告)号：US07531296B2

公开(公告)日：2009-05-12

申请号：US11209684

申请日：2005-08-24

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/26

CPC classification number: G03F7/40 ,  G03F7/405

Abstract: A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

Abstract translation: 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

公开(公告)号：US07482280B2

公开(公告)日：2009-01-27

申请号：US11426233

申请日：2006-06-23

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

IPC: H01L21/302 ,  G03F7/00

CPC classification number: G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086

Abstract: A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.

Abstract translation: 光刻图案的方法包括在基底上形成第一材料层，第一材料层基本上不含硅，并且在第一材料层上方形成包括至少一个开口的图案化抗蚀剂层。 在图案化的抗蚀剂层上形成含有硅的第二材料层，并且使用第二材料层作为掩模在第一材料层中形成开口。

公开(公告)号：US07473517B2

公开(公告)日：2009-01-06

申请号：US11025538

申请日：2004-12-29

Applicant: Ching-Yu Chang ,  Burn Jeng Lin ,  Chi-Wen Liu

Inventor： Ching-Yu Chang ,  Burn Jeng Lin ,  Chi-Wen Liu

IPC: G03F7/30

CPC classification number: G03F7/322

Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.

Abstract translation: 在半导体衬底上产生抗蚀剂图像的方法包括：使用包括超临界二氧化碳和碱（例如四甲基氢氧化铵（TMAH））的第一流体在半导体衬底上曝光光致抗蚀剂层并显影曝光的光致抗蚀剂层。 此外，可以使用包括超临界二氧化碳和溶剂如甲醇，乙醇，异丙醇和二甲苯的第二流体来清洗显影的光致抗蚀剂。

公开(公告)号：US20080304025A1

公开(公告)日：2008-12-11

申请号：US11760365

申请日：2007-06-08

Applicant: Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03B27/42

CPC classification number: G03F7/70716 ,  G03F7/70341

Abstract: An immersion lithography apparatus includes a lens assembly having an imaging lens, a wafer stage for securing a wafer beneath the lens assembly, a fluid module for providing a fluid into a space between the lens assembly and the wafer, and a plurality of extraction units positioned proximate to an edge of the wafer. The extraction units are configured to operate independently to remove a portion of the fluid provided into the space between the lens assembly and the wafer.

Abstract translation: 浸没式光刻设备包括具有成像透镜的透镜组件，用于将晶片固定在透镜组件下方的晶片台，用于将流体提供到透镜组件和晶片之间的空间的流体模块以及定位在多个提取单元 靠近晶片的边缘。 提取单元被配置为独立地操作以去除设置在透镜组件和晶片之间的空间中的一部分流体。

公开(公告)号：US20080299487A1

公开(公告)日：2008-12-04

申请号：US11828809

申请日：2007-07-26

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C1/04 ,  G03F5/00

CPC classification number: G03F7/2041 ,  G03F7/0046

Abstract: An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.

Abstract translation: 一种浸没式光刻抗蚀剂材料，包括具有第一极性的基质聚合物和具有基本上大于第一极性的第二极性的添加剂。 添加剂可以具有小于约1000道尔顿的分子量。 浸没式光刻抗蚀剂材料可具有基本上大于基质聚合物的接触角的接触角。

公开(公告)号：US07420188B2

公开(公告)日：2008-09-02

申请号：US11251330

申请日：2005-10-14

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin ,  David Lu

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin ,  David Lu

IPC: G03F7/20

CPC classification number: G03F7/2041 ,  G03F7/70341 ,  G03F7/70941

Abstract: A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

Abstract translation: 一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理 。

公开(公告)号：US20080185021A1

公开(公告)日：2008-08-07

申请号：US11671570

申请日：2007-02-06

Applicant: Chih-Cheng Chiu ,  Ching-Yu Chang

Inventor： Chih-Cheng Chiu ,  Ching-Yu Chang

IPC: B08B3/04

CPC classification number: G03F1/82 ,  Y10S134/902

Abstract: A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble precipitates, and rinsing the photomask with a fluid to remove the insoluble precipitates from the photomask.

Abstract translation: 用于清洁光掩模的方法包括用化学清洁剂清洁光掩模，将溶液引入到光掩模中，溶液被配置为与由化学清洁剂产生的残余物反应以形成不溶性沉淀物，并用流体冲洗光掩模以除去 来自光掩模的不溶性沉淀物。

公开(公告)号：US20080102648A1

公开(公告)日：2008-05-01

申请号：US11555558

申请日：2006-11-01

Applicant: Chin-Hsiang Lin ,  Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Ching-Yu Chang ,  Vencent Chang

Inventor： Chin-Hsiang Lin ,  Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Ching-Yu Chang ,  Vencent Chang

IPC: H01L21/302 ,  G03G13/10

CPC classification number: H01L21/0271 ,  G03F7/095

Abstract: A method of forming a resist pattern in a semiconductor device layer includes forming a buffer layer on a semiconductor device layer and forming a resist layer on the buffer layer. A decomposing agent is released into a portion of the buffer layer by a portion of the resist layer whereupon the portion of the buffer layer and the portion of the resist layer are removed to form a process window substantially free of resist residue that can be subsequently exploited for etching of the semiconductor device layer.

Abstract translation: 在半导体器件层中形成抗蚀剂图案的方法包括在半导体器件层上形成缓冲层，并在缓冲层上形成抗蚀剂层。 分解剂通过抗蚀剂层的一部分释放到缓冲层的一部分中，随后缓冲层的部分和抗蚀剂层的一部分被去除以形成基本上不含抗蚀剂残留物的工艺窗口，其可以被随后利用 用于蚀刻半导体器件层。

公开(公告)号：US20080076038A1

公开(公告)日：2008-03-27

申请号：US11534289

申请日：2006-09-22

Applicant: Ching-Yu CHANG ,  Chih-Cheng CHIU

Inventor： Ching-Yu CHANG ,  Chih-Cheng CHIU

IPC: G03F1/00 ,  G03C1/00

CPC classification number: G03F7/2041 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/168

Abstract: A material is provided for use in an immersion lithographic process of a semiconductor substrate. The material includes a photo-sensitive polymer configured to turn soluble to a base solution in response to reaction with an acid and at least one of either a base soluble polymer or an acid labile polymer. The base soluble polymer is configured to turn soluble to water in response to reaction with a developer solution. The acid labile polymer is configured to turn soluble to water after releasing a leaving group in reaction to the acid.

Abstract translation: 提供了用于半导体衬底的浸没式光刻工艺中的材料。 该材料包括光敏聚合物，其被配置为响应于与酸和碱溶性聚合物或酸不稳定聚合物中的至少一种而发生反应而转化为碱溶液。 基础可溶性聚合物被配置为响应于与显影剂溶液的反应而使水溶解。 酸不稳定聚合物被配置成在释放离去基团以反应酸之后将其溶于水。