公开(公告)号：US07713685B2

公开(公告)日：2010-05-11

申请号：US11143666

申请日：2005-06-03

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/26

CPC分类号： G03F7/70341 ,  G03F7/0395 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/70991

摘要： An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.

摘要翻译： 曝光系统包括用清洁液清洗形成在晶片上的抗蚀膜的表面的清洁单元和用于在设置在抗蚀剂膜和投影透镜之间的浸渍液进行图案曝光的曝光单元。

公开(公告)号：US07666967B2

公开(公告)日：2010-02-23

申请号：US11606069

申请日：2006-11-30

申请人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Michitaka Ootani

发明人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Michitaka Ootani

IPC分类号： C08F214/18

CPC分类号： C07D307/93 ,  C07D409/12 ,  G03F7/0046 ,  G03F7/0397

摘要： A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.

摘要翻译： 使用包含通过聚合式（1）的酯化合物获得的重复单元（2）的聚合物来形成抗蚀剂组合物。 R 1是F或C 1 -C 6氟代烷基，R 2是H或C 1 -C 8烷基，R 3是O或C 1 -C 6亚烷基，R 4和R 5各自是H或C 1 -C 10烷基或氟代烷基，R 6是H或酸不稳定基团 。 当通过ArF光刻处理时，抗蚀剂组合物具有改进的分辨率，透明度，最小的线边缘粗糙度和耐蚀刻性的优点。 当通过ArF浸没式光刻法处理介于投影透镜和晶片之间的液体时，抗蚀剂组合物表现出更好的性能。

公开(公告)号：US20090294726A1

公开(公告)日：2009-12-03

申请号：US12472681

申请日：2009-05-27

申请人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： B32B1/00 ,  B29C35/08 ,  B29C35/02 ,  C09K3/00

CPC分类号： H01B3/10 ,  Y10T428/25 ,  Y10T428/259 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/31663

摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.

摘要翻译： 提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。 具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成 存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q） 附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

公开(公告)号：US07588876B2

公开(公告)日：2009-09-15

申请号：US11128441

申请日：2005-05-13

申请人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

发明人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

IPC分类号： G03F7/004 ,  C08F12/30

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/108

摘要： A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.

摘要翻译： 抗蚀剂材料包括含有具有由以下化学式1的通式表示的单元的化合物的基础聚合物：其中R 1，R 2和R 3相同或不同，为氢原子，氟原子，直链 烷基，支链或环状烷基或碳数不小于1且不大于20的氟化烷基; R4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R5为氢原子，直链烷基，支链或环状烷基或碳数为1以上20以下的氟化烷基或被酸释放的保护基; R6为具有环状酯化合物的基团，具有羟基的脂环族化合物的基团或具有包含六氟异丙醇的化合物的基团。

公开(公告)号：US20090227111A1

公开(公告)日：2009-09-10

申请号：US12466769

申请日：2009-05-15

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： H01L21/306 ,  G03F7/20

CPC分类号： G03F7/2041 ,  G03F7/11 ,  Y10S430/119 ,  Y10S430/123

摘要： A resist film made of a chemically amplified resist is formed on a substrate. Subsequently, a barrier film for preventing a component of the resist film from eluting into an immersion liquid or preventing the immersion liquid from permeating into the resist film is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.

摘要翻译： 在基板上形成由化学放大抗蚀剂制成的抗蚀剂膜。 随后，在抗蚀剂膜上形成用于防止抗蚀剂膜的成分洗脱浸入液体或防止浸渍液渗透到抗蚀剂膜中的阻挡膜。 此后，通过设置在阻挡膜上的浸没液体，通过选择性地照射抗蚀剂膜，通过阻挡膜曝光光来进行图案曝光。 然后，在去除阻挡膜之后，对经过图案曝光的抗蚀剂膜进行显影，以形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US20090104560A1

公开(公告)日：2009-04-23

申请号：US12202615

申请日：2008-09-02

申请人： Masayuki ENDO ,  Masaru Sasago

发明人： Masayuki ENDO ,  Masaru Sasago

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： In exposing a resist film to light with a liquid provided on a positive chemically amplified resist film, a barrier film material for a barrier film formed between the resist film and the liquid includes a compound having an acid leaving group and a thermal acid generator.

摘要翻译： 在利用设置在正性化学放大抗蚀剂膜上的液体将抗蚀剂膜曝光的情况下，形成在抗蚀剂膜和液体之间的阻挡膜用阻挡膜材料包括具有酸离子基团和热酸发生剂的化合物。

公开(公告)号：US20090091719A1

公开(公告)日：2009-04-09

申请号：US12314208

申请日：2008-12-05

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03B27/52

CPC分类号： G03F7/70341 ,  G03F7/70733 ,  G03F7/70866 ,  Y10S430/146

摘要： An exposure system includes an exposure section provided within a chamber for irradiating a resist film formed on a wafer with exposing light through a mask with an immersion liquid provided on the resist film. It further includes a drying section for drying the surface of the resist film after the irradiation.

摘要翻译： 曝光系统包括设置在室内的曝光部分，用于通过设置在抗蚀剂膜上的浸渍液体通过掩模曝光光照射形成在晶片上的抗蚀剂膜。 其还包括干燥部分，用于在照射之后干燥抗蚀剂膜的表面。

公开(公告)号：US07488567B2

公开(公告)日：2009-02-10

申请号：US11440126

申请日：2006-05-25

申请人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Michitaka Ootani

发明人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Michitaka Ootani

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0046 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A polymer comprising recurring units of formula (1) wherein R1 is F or fluoroalkyl, R2 is alkylene or fluoroalkylene, and R3 is an acid labile group and having a Mw of 1,000-500,000 is used to formulate a resist composition, which is processed by the lithography involving ArF exposure and offers many advantages including resolution, minimal line edge roughness, etch resistance, and minimal surface roughness after etching. The composition performs well when processed by the ArF immersion lithography with liquid interposed between the projection lens and the wafer.

摘要翻译： 一种包含式（1）的重复单元的聚合物，其中R1是F或氟代烷基，R2是亚烷基或氟代亚烷基，R3是酸不稳定基团，Mw为1,000-500,000，用于配制抗蚀剂组合物， 涉及ArF曝光的光刻技术提供许多优点，包括分辨率，最小线边缘粗糙度，耐蚀刻性和蚀刻后的最小表面粗糙度。 当通过ArF浸没式光刻法处理介于投影透镜和晶片之间的液体时，组合物表现良好。

公开(公告)号：US07455950B2

公开(公告)日：2008-11-25

申请号：US11702643

申请日：2007-02-06

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： G03F7/0392 ,  C08F259/00 ,  C08F291/00

摘要： A resist material includes a polymeric material made of a unit represented by a general formula of the following Chemical Formula; and an acid generator for generating an acid through irradiation with light: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; m≧0, n≧0, s>0 (whereas excluding m=n=0) and 1≦k≦3.

摘要翻译： 抗蚀剂材料包括由以下化学式的通式表示的单元制成的聚合物材料; 以及通过照射光产生酸的酸发生剂，其中R 1，R 2和R 3相同或不同，并且是 氢原子，氟原子或直链烷基，碳数为1以上且20以下的支链或环状烷基或氟化烷基; R是氢原子，直链烷基，支链或环状烷基或碳数不小于1且不多于20的氟化烷基; m> = 0，n> = 0，s> 0（而不包括m = n = 0）和1 <= k <= 3。

公开(公告)号：US07357961B2

公开(公告)日：2008-04-15

申请号：US10819544

申请日：2004-04-07

申请人： Motoaki Iwabuchi ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Motoaki Iwabuchi ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08G77/06 ,  B05D3/02

CPC分类号： H01L21/3122 ,  C08G77/04 ,  C08G77/08 ,  C08G77/50 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249953 ,  Y10T428/31663

摘要： Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): (R1)aSi(R2)4-a  (1) (R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c  (2) wherein R1, R3 and R4 each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5 and R6 each independently represents a hydrolyzable group; R7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.

摘要翻译： 本发明提供一种成膜组合物，其可以制造具有高强度和低介电常数的膜，其制造方法，多孔膜形成方法，多孔膜和在内部含有多孔膜的半导体器件。 更具体地提供了一种成膜组合物，其包含通过在阴离子离子交换树脂的存在下水解和缩合一种或多种可水解硅烷化合物而获得的聚合物，其中可水解硅烷化合物选自由式（1） ）和（2）：<？in-line-formula description =“In-line Formulas”end =“lead”？（R＆lt; 1＆gt;）＆lt; 4-a（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula- 公式描述=“在线公式”end =“lead”？>（R 3）3（R 5）3 -b-Si-R 7 -Si（R 6）3-c（R 4） ）（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R 1，R 3 R 4和R 4各自独立地表示可以具有取代基的一价烃基; R 2，R 5和R 6各自独立地表示可水解基团; R 7表示二价有机基团; a表示0〜3的整数， b和c各自表示1或2的整数。