Abstract:
A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.
Abstract:
Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.
Abstract:
A termination structure is provided for a power transistor. The termination structure includes a semiconductor substrate having an active region and a termination region. The substrate has a first type of conductivity. A termination trench is located in the termination region and extends from a boundary of the active region toward an edge of the semiconductor substrate. A doped region having a second type of conductivity is disposed in the substrate below the termination trench. A MOS gate is formed on a sidewall adjacent the boundary. The doped region extends from below a portion of the MOS gate spaced apart from the boundary toward the edge of the semiconductor substrate. A termination structure oxide layer is formed on the termination trench covering a portion of the MOS gate and extends toward the edge of the substrate. A first conductive layer is formed on a backside surface of the semiconductor substrate and a second conductive layer is formed atop the active region, an exposed portion of the MOS gate, and extends to cover a portion of the termination structure oxide layer.
Abstract:
A biaxial retardation film is disclosed, including a substrate, wherein the substrate includes an alignment film thereon or an alignment-treated surface; and an optically anisotropic coating on the substrate, wherein the optically anisotropic coating includes a top layer and a bottom layer, wherein the bottom layer is a parallel aligned liquid crystal layer along an alignment direction of the substrate, and the top layer is a vertically aligned hexagonal pillar array liquid crystal layer, wherein three-dimensional refractive indices of the optically anisotropic coating satisfy a relationship nx>nz>ny. The disclosure also provides a fabrication method thereof.
Abstract:
Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.
Abstract:
A device includes a filling valve, a sleeve, an absorbing member, and a gas control unit. The filling valve can be engaged for filling liquid gas. The sleeve includes a fluid passing section that enables liquid gas outside to flow therein. The absorbing member can absorb liquid gas and is disposed in the sleeve. The gas control unit includes a main body, a gas inlet and flow rate adjusting mechanism, and a gas outlet mechanism. The gas inlet and flow rate adjusting mechanism includes an adjustably movable valve and a first air seal. The first air seal is mounted between the adjustably movable valve and the main body to prevent liquid gas from passing therebetween. The adjustably movable valve is in fluid communication with the gas outlet mechanism such that vaporized gas emitted from the absorbing member is discharged from the device from the gas outlet mechanism.
Abstract:
The present invention relates to a laser-optical position detecting module with a laser light source, comprising: laser mode conversing assembly, having a laser source capable of emitting a time-modulated laser beam; a laser mode conversing unit, used to expand the time-modulated laser beam to a two-dimension sensing plane; a drive control unit, adopted for driving the laser source to emit the time-modulated laser beam; and a detector matrix, used for detecting the. The laser mode conversing unit has a phase delay device and a passive optical device capable of reflecting the light; so that, through the laser mode conversing unit, the laser-optical position detecting module can expand the light emitted by the laser source to the two-dimension sensing plane without using any other mechanical scanning; moreover, it make the energy of the light emitted by the laser source not easily decays, so as to maintain the accuracy of light detection.