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公开(公告)号：US09129868B2
公开(公告)日：2015-09-08
申请号：US13481781
申请日：2012-05-26
申请人： Chan-Long Shieh , Gang Yu , Fatt Foong , Liu-Chung Lee
发明人： Chan-Long Shieh , Gang Yu , Fatt Foong , Liu-Chung Lee
CPC分类号： H01L27/1288 , H01L27/1225
摘要： A method of fabricating a TFT and IPS with reduced masking operations includes a substrate, a gate, a layer of gate dielectric on the gate and surrounding substrate surface and a semiconducting metal oxide on the gate dielectric. A channel protection layer overlies the gate to define a channel area in the semiconducting metal oxide. A S/D metal layer is patterned on the channel protection layer and a portion of the exposed semiconducting metal oxide to define an IPS area. An organic dielectric material is patterned on the S/D terminals and at an opposed side of the IPS area. The S/D metal is etched to expose the semiconducting metal oxide defining a first IPS electrode. A passivation layer covers the first electrode and a layer of transparent conductive material is patterned on the passivation layer to define a second IPS electrode overlying the first electrode.
摘要翻译： 制造具有减小的掩模操作的TFT和IPS的方法包括基板，栅极，栅极上的栅极电介质层和周围的衬底表面以及栅极电介质上的半导体金属氧化物。 沟道保护层覆盖栅极以限定半导体金属氧化物中的沟道区。 S / D金属层在通道保护层和暴露的半导体金属氧化物的一部分上被图案化以限定IPS区域。 在S / D端子和IPS区域的相对侧上构图有机电介质材料。 蚀刻S / D金属以暴露限定第一IPS电极的半导体金属氧化物。 钝化层覆盖第一电极，并且在钝化层上图案化透明导电材料层以限定覆盖第一电极的第二IPS电极。
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公开(公告)号：US09099563B2
公开(公告)日：2015-08-04
申请号：US14552641
申请日：2014-11-25
申请人： Chan-Long Shieh , Gang Yu
发明人： Chan-Long Shieh , Gang Yu
CPC分类号： H01L29/04 , H01L21/00 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/16 , H01L21/28556 , H01L27/1214 , H01L27/1225 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L51/5012
摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
摘要翻译： 薄膜半导体器件具有包括非晶半导体离子金属氧化物和非晶绝缘共价金属氧化物的混合物的半导体层。 一对端子被定位成与半导体层连通并且限定导电通道，并且栅极端子定位成与导电沟道连通并进一步定位成控制沟道的导通。 本发明还包括在沉积过程中沉积包括使用氮气的混合物的方法，以控制所得半导体层中的载流子浓度。
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公开(公告)号：US20150115260A1
公开(公告)日：2015-04-30
申请号：US14552641
申请日：2014-11-25
申请人： Chan-Long Shieh , Gang Yu
发明人： Chan-Long Shieh , Gang Yu
IPC分类号： H01L29/786 , H01L27/12 , H01L29/04
CPC分类号： H01L29/04 , H01L21/00 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/16 , H01L21/28556 , H01L27/1214 , H01L27/1225 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L51/5012
摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
摘要翻译： 薄膜半导体器件具有包括非晶半导体离子金属氧化物和非晶绝缘共价金属氧化物的混合物的半导体层。 一对端子被定位成与半导体层连通并且限定导电通道，并且栅极端子定位成与导电沟道连通并进一步定位成控制沟道的导通。 本发明还包括在沉积过程中沉积包括使用氮气的混合物的方法，以控制所得半导体层中的载流子浓度。
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公开(公告)号：US08679905B2
公开(公告)日：2014-03-25
申请号：US13155749
申请日：2011-06-08
申请人： Chan-Long Shieh , Gang Yu , Fatt Foong
发明人： Chan-Long Shieh , Gang Yu , Fatt Foong
IPC分类号： H01L21/84
CPC分类号： H01L29/7869 , H01L21/428 , H01L29/45 , H01L29/66969 , H01L29/78606
摘要： A method of forming ohmic source/drain contacts in a metal oxide semiconductor thin film transistor includes providing a gate, a gate dielectric, a high carrier concentration metal oxide semiconductor active layer with a band gap and spaced apart source/drain metal contacts in a thin film transistor configuration. The spaced apart source/drain metal contacts define a channel region in the active layer. An oxidizing ambient is provided adjacent the channel region and the gate and the channel region are heated in the oxidizing ambient to reduce the carrier concentration in the channel area. Alternatively or in addition each of the source/drain contacts includes a very thin layer of low work function metal positioned on the metal oxide semiconductor active layer and a barrier layer of high work function metal is positioned on the low work function metal.
摘要翻译： 在金属氧化物半导体薄膜晶体管中形成欧姆源极/漏极接触的方法包括：提供栅极，栅极电介质，具有带隙的高载流子浓度金属氧化物半导体有源层和间隔开的源/漏极金属接触体 薄膜晶体管配置。 间隔开的源极/漏极金属触点限定有源层中的沟道区。 在沟道区域附近提供氧化环境，并且栅极和沟道区域在氧化环境中被加热以降低沟道区域中的载流子浓度。 或者或另外每个源极/漏极触点包括位于金属氧化物半导体有源层上的非常薄的低功函数金属层，并且高功函数金属的势垒层位于低功函数金属上。
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公开(公告)号：US08592817B2
公开(公告)日：2013-11-26
申请号：US13564746
申请日：2012-08-02
申请人： Chan-Long Shieh , Gang Yu , Fatt Foong
发明人： Chan-Long Shieh , Gang Yu , Fatt Foong
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565
摘要： A method of fabricating MOTFTs on transparent substrates by positioning opaque gate metal on the substrate front surface and depositing gate dielectric material overlying the gate metal and a surrounding area and metal oxide semiconductor material on the dielectric material. Depositing selectively removable etch stop material on the semiconductor material and photoresist on the etch stop material to define an isolation area in the semiconductor material. Removing uncovered portions of the etch stop. Exposing the photoresist from the substrate rear surface using the gate metal as a mask and removing exposed portions leaving the etch stop material overlying the gate metal covered. Etching the semiconductor material to isolate the TFT. Selectively etching the etch stop layer to leave a portion overlying the gate metal defining a channel area. Depositing and patterning conductive material to form source and drain areas on opposed sides of the channel area.
摘要翻译： 一种在透明基板上制造MOTFT的方法，该方法是将不透明栅极金属定位在衬底前表面上，并沉积覆盖在栅极金属上的栅介质材料以及介电材料上的周围区域和金属氧化物半导体材料。 在半导体材料和蚀刻停止材料上的光致抗蚀剂上沉积选择性可移除的蚀刻停止材料以限定半导体材料中的隔离区域。 去除蚀刻停止件的未覆盖部分。 使用栅极金属作为掩模从基板后表面露出光致抗蚀剂，并去除暴露部分，留下覆盖栅极金属的蚀刻停止材料。 蚀刻半导体材料以隔离TFT。 选择性地蚀刻蚀刻停止层以留下覆盖栅极金属的部分限定沟道区域。 沉积和图案化导电材料以在通道区域的相对侧上形成源区和漏区。
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公开(公告)号：US20130143395A1
公开(公告)日：2013-06-06
申请号：US13758293
申请日：2013-02-04
申请人： Chan-Long Shieh , Gang Yu
发明人： Chan-Long Shieh , Gang Yu
IPC分类号： H01L21/02
CPC分类号： H01L29/04 , H01L21/00 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/16 , H01L21/28556 , H01L27/1214 , H01L27/1225 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L51/5012
摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
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公开(公告)号：US20120218241A1
公开(公告)日：2012-08-30
申请号：US13034458
申请日：2011-02-24
申请人： Chan-Long Shieh , Gang Yu
发明人： Chan-Long Shieh , Gang Yu
IPC分类号： G06F3/038
CPC分类号： G09G3/3225 , G09G2310/063 , G09G2320/0204
摘要： A method of driving a display device includes providing an array of pixels including rows and columns of pixels, each pixel including a switching/driving transistor circuit and at least one light emitting device. Each row of pixels has a scan line and each column of pixels has a data line. The method further includes defining a frame period during which each pixel in the array of pixels is addressed and dividing the frame period into a write subframe, a display subframe, and a rest subframe. A scan pulse is supplied to each scan line, a data signal to each data line and the light emitting devices are disabled during the write subframe. The light emitting devices are enabled during the display subframe and the switching/driving transistor circuits are disabled. A rest pulse is supplied to all scan lines and the light emitting devices are disabled during the rest subframe.
摘要翻译： 一种驱动显示装置的方法包括提供包括行和列的像素的像素阵列，每个像素包括开关/驱动晶体管电路和至少一个发光器件。 每行像素具有扫描线，并且每列像素具有数据线。 该方法还包括定义帧期间，在该帧周期期间，像素阵列中的每个像素被寻址并且将帧周期划分为写子帧，显示子帧和剩余子帧。 向每条扫描线提供扫描脉冲，在写入子帧期间，对每个数据线的数据信号和发光器件禁用。 发光器件在显示子帧期间被使能，并且开关/驱动晶体管电路被禁止。 向所有扫描线提供静止脉冲，并且在其余子帧期间禁用发光装置。
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公开(公告)号：US20110037054A1
公开(公告)日：2011-02-17
申请号：US12542599
申请日：2009-08-17
申请人： Chan-Long Shieh , Gang Yu
发明人： Chan-Long Shieh , Gang Yu
CPC分类号： H01L27/3244 , H01L27/3204 , H01L27/3246
摘要： An active matrix organic light emitting display includes a plurality of pixels with each pixel including at least one organic light emitting diode circuit. Each diode circuit producing a predetermined amount of light lm in response to power W applied to the circuit and including n organic light emitting diodes cascaded in series so as to increase voltage dropped across the cascaded diodes by the factor of n, where n is an integer greater than one. Each diode of the n organic light emitting diodes produces approximately 1/n of the predetermined amount of light lm so as to reduce current flowing in the diodes by 1/n. The organic light emitting diode circuit of each pixel includes a thin film transistor current driver with the cascaded diodes connected in the source/drain circuit so the current driver provides the current flowing in the diodes.
摘要翻译： 有源矩阵有机发光显示器包括多个像素，每个像素包括至少一个有机发光二极管电路。 每个二极管电路响应于施加到电路的功率W而产生预定量的光lm，并且包括串联级联的n个有机发光二极管，以便增加跨越级联二极管的电压以n为因子，其中n是整数 大于一。 n个有机发光二极管的每个二极管产生大约1 / n的预定量的光lm，以便将在二极管中流动的电流减少1 / n。 每个像素的有机发光二极管电路包括薄膜晶体管电流驱动器，其中级联二极管连接在源极/漏极电路中，因此电流驱动器提供流过二极管的电流。
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公开(公告)号：US20100019656A1
公开(公告)日：2010-01-28
申请号：US12178209
申请日：2008-07-23
申请人： Gang Yu , Chan-Long Shieh
发明人： Gang Yu , Chan-Long Shieh
CPC分类号： H01L27/322 , H01L27/3244
摘要： A full-color active matrix organic light emitting display including a transparent substrate, a color filter positioned on an upper surface of the substrate, a spacer layer formed on the upper surface of the color filter, a metal oxide thin film transistor backpanel formed on the spacer layer and defining an array of pixels, and an array of single color, organic light emitting devices formed on the backpanel and positioned to emit light downwardly through the backpanel, the spacer layer, the color filter, and the substrate in a full-color display.
摘要翻译： 一种全色有源矩阵有机发光显示器，包括透明基板，位于基板上表面的滤色器，形成在滤色器上表面上的间隔层，金属氧化物薄膜晶体管背板 间隔层和限定像素阵列，以及形成在背板上的单色有机发光器件的阵列，并被定位成以全色的方式通过背板，间隔层，滤色器和衬底向下发光。 显示。
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公开(公告)号：US20080174519A1
公开(公告)日：2008-07-24
申请号：US11625904
申请日：2007-01-23
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： G09G3/20
CPC分类号： G09G3/344 , G02F1/157 , G02F1/167 , G09G2300/0426 , G09G2300/08
摘要： Reconfigurable color signage includes an array of light valves each having memory. An active matrix including a plurality of conductive select and data lines is positioned on one side of the array. Each light valve is electrically coupled to be separately addressable by a unique combination of select and data line. The active matrix has a write mode in which signals are supplied to each light valve to provide a selected light transmittance and a display mode in which the memory of each light valve retains the selected transmittance after the signals of the write mode have been removed. A backlight is positioned to direct light in a light path through the array and a color filter is positioned in the light path to define a plurality of pixels, including one red, green, and blue filter for each pixel, and each positioned to be associated with a separate light valve.
摘要翻译： 可重构颜色标志包括各自具有记忆的光阀阵列。 包括多个导电选择和数据线的有源矩阵位于阵列的一侧。 每个光阀电耦合以通过选择和数据线的独特组合单独寻址。 有源矩阵具有写入模式，其中向每个光阀提供信号以提供所选择的透光率和显示模式，其中每个光阀的存储器在写入模式的信号已被去除之后保持所选择的透射率。 背光被定位成将光引导到穿过阵列的光路中，并且滤光器被定位在光路中以限定多个像素，每个像素包括用于每个像素的一个红色，绿色和蓝色滤光器，并且每个像素定位成相关联 配有独立的光阀。
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