公开(公告)号：US09448574B2

公开(公告)日：2016-09-20

申请号：US14495160

申请日：2014-09-24

Applicant: Infineon Technologies AG

Inventor： Mario Motz

IPC: G05F1/569 ,  G05F1/575

CPC classification number: G05F1/575

Abstract: A system including a first transistor, a first capacitor and a circuit. The first transistor has a first control input and is configured to regulate an output voltage. The first capacitor is coupled at one end to the first control input and at another end to a circuit reference. The circuit is configured to provide a first voltage to the first control input, where the first voltage includes an offset voltage that is referenced to the output voltage and adjusted to compensate for variations in the first transistor.

Abstract translation: 一种包括第一晶体管，第一电容器和电路的系统。 第一晶体管具有第一控制输入并被配置为调节输出电压。 第一电容器在一端耦合到第一控制输入，另一端耦合到电路基准。 电路被配置为向第一控制输入提供第一电压，其中第一电压包括参考输出电压的偏移电压并被调整以补偿第一晶体管的变化。

公开(公告)号：US20160238647A1

公开(公告)日：2016-08-18

申请号：US14623258

申请日：2015-02-16

Applicant: Infineon Technologies AG

Inventor： Mario Motz

IPC: G01R31/00 ,  G01R31/28 ,  G01R29/22

CPC classification number: H01L21/71 ,  G01N22/00 ,  G01R27/02 ,  G01R31/2872 ,  G01R31/2896 ,  G05D15/01 ,  G05F1/56 ,  G05F3/02 ,  H01L23/562 ,  H01M8/04649

Abstract: Stress compensated systems and methods of compensating for electrical and mechanical stress are discussed. One example system can include a first circuit and a global stress compensation component. The first circuit can be configured to generate a first signal and can comprise at least one local stress compensation component (e.g., employing dynamic element matching, chopping, etc.). The global stress compensation component can comprise one or more stress sensors configured to sense one or more stress components associated with the system. The global stress compensation component can be configured to receive the first signal and to compensate for stress effects on the first signal.

Abstract translation: 讨论了应力补偿系统和补偿电气和机械应力的方法。 一个示例性系统可以包括第一电路和全局应力补偿组件。 第一电路可以被配置为产生第一信号并且可以包括至少一个局部应力补偿分量（例如，采用动态元件匹配，切割等）。 全局应力补偿部件可以包括被配置为感测与系统相关联的一个或多个应力分量的一个或多个应力传感器。 全局应力补偿部件可被配置为接收第一信号并补偿对第一信号的应力影响。

公开(公告)号：US20160231371A1

公开(公告)日：2016-08-11

申请号：US15132783

申请日：2016-04-19

Applicant: Infineon Technologies AG

Inventor： Friedrich Rasbornig ,  Mario Motz ,  Dirk Hammerschmidt ,  Ferdinand Gastinger ,  Bernhard Schaffer ,  Wolfgang Granig

IPC: G01R31/00 ,  G01D3/08

CPC classification number: G01R31/007 ,  B60T8/885 ,  B60T2250/06 ,  B60T2270/406 ,  B60T2270/411 ,  B60T2270/413 ,  G01D3/08 ,  G01R31/2644 ,  G01R31/2829 ,  G01R31/2856 ,  G01R31/2884

Abstract: Embodiments relate to systems and methods for sensor self-diagnostics using multiple signal paths. In an embodiment, the sensors are magnetic field sensors, and the systems and/or methods are configured to meet or exceed relevant safety or other industry standards, such as SIL standards. For example, a monolithic integrated circuit sensor system implemented on a single semiconductor ship can include a first sensor device having a first signal path for a first sensor signal on a semiconductor chip; and a second sensor device having a second signal path for a second sensor signal on the semiconductor chip, the second signal path distinct from the first signal path, wherein a comparison of the first signal path signal and the second signal path signal provides a sensor system self-test.

Abstract translation: 实施例涉及使用多个信号路径的传感器自我诊断的系统和方法。 在一个实施例中，传感器是磁场传感器，并且系统和/或方法被配置为满足或超过诸如SIL标准的相关安全或其他工业标准。 例如，在单个半导体船上实现的单片集成电路传感器系统可以包括具有用于半导体芯片上的第一传感器信号的第一信号路径的第一传感器设备; 以及第二传感器装置，具有用于半导体芯片上的第二传感器信号的第二信号路径，第二信号路径与第一信号路径不同，其中第一信号路径信号和第二信号路径信号的比较提供传感器系统 自我测试。

公开(公告)号：US20160169940A1

公开(公告)日：2016-06-16

申请号：US14949237

申请日：2015-11-23

Applicant: Infineon Technologies AG

Inventor： Udo Ausserlechner ,  Mario Motz

IPC: G01R15/20 ,  G01R19/00

CPC classification number: G01R15/202 ,  G01R15/207 ,  G01R19/0092 ,  G01R33/072 ,  G01R33/075

Abstract: Embodiments related to magnetic current sensors, systems and methods. In an embodiment, a magnetic current sensor integrated in an integrated circuit (IC) and housed in an IC package comprises an IC die formed to present at least three magnetic sense elements on a first surface, a conductor, and at least one slot formed in the conductor, wherein a first end of the at least one slot and at least one of the magnetic sense elements are relatively positioned such that the at least one of the magnetic sense elements is configured to sense an increased magnetic field induced in the conductor proximate the first end of the at least one slot.

Abstract translation: 与磁流传感器，系统和方法相关的实施例。 在一个实施例中，集成在集成电路（IC）中并且容纳在IC封装中的磁流传感器包括IC模具，其形成为在第一表面，导体和至少一个槽上形成至少三个磁感应元件 所述导体，其中所述至少一个狭槽的第一端和所述磁感应元件中的至少一个相对定位成使得所述至少一个所述磁感应元件被配置为感测在所述导体中感应的增加的磁场， 至少一个槽的第一端。

公开(公告)号：US20160132091A1

公开(公告)日：2016-05-12

申请号：US14926602

申请日：2015-10-29

Applicant: Infineon Technologies AG

Inventor： Christof Bodner ,  Theodor Kranz ,  Mario Motz ,  Wolfgang Scherr

IPC: G06F1/32 ,  G06F1/06

CPC classification number: G06F1/3206 ,  G01D5/145 ,  G06F1/06

Abstract: A digital sensor system includes a sensor element, an analog-to-digital converter coupled to the sensor element, and a wake-up circuit configured to activate the sensor element and the analog-to-digital converter in response to a predefined event.

Abstract translation: 数字传感器系统包括传感器元件，耦合到传感器元件的模数转换器以及响应于预定义事件来激活传感器元件和模拟 - 数字转换器的唤醒电路。

公开(公告)号：US20160033585A1

公开(公告)日：2016-02-04

申请号：US14445532

申请日：2014-07-29

Applicant: Infineon Technologies AG

Inventor： Mario Motz

IPC: G01R33/00 ,  G01R33/02

CPC classification number: G01R33/0023 ,  G01R33/02

Abstract: A sensor device includes a high voltage component, a sensor component and a charge storage component. The sensor component utilizes a low voltage supply. The high voltage component is configured to generate the low voltage supply from a high voltage supply. The charge storage component is configured to provide charge for the low voltage supply during a power break. The charge storage component has a vertical capacitor.

Abstract translation: 传感器装置包括高电压部件，传感器部件和电荷存储部件。 传感器组件使用低电压电源。 高电压部件配置为从高压电源产生低电压电源。 电荷存储部件被配置为在断电期间为低电压电源提供电荷。 电荷存储部件具有垂直电容器。

公开(公告)号：US20150355293A1

公开(公告)日：2015-12-10

申请号：US14828759

申请日：2015-08-18

Applicant: Infineon Technologies AG

Inventor： Mario Motz

IPC: G01R33/07

CPC classification number: G01R33/07 ,  G01R33/075

Abstract: A spinning current Hall sensor configured to provide a sequence of input signals in response to a bias current being applied to a sequence of terminals of Hall sensing elements of the Hall sensor, the terminals of the Halls sensing elements configured to be interconnected in a sequence of configurations between a bias current supply and ground, with the bias current supply being connected to and applying the bias current to a different one of the terminals of each configuration. A chopping circuit demodulates the sequence of input signals to provide a corresponding sequence of demodulated positive and negative signals, with a residual offset calibration signal for the spinning current Hall sensor being based on the sequence of demodulated positive and negative signals.

Abstract translation: 旋转电流霍尔传感器被配置为响应于施加到霍尔传感器的霍尔感测元件的一系列端子的偏置电流而提供一系列输入信号，霍尔感测元件的端子被配置为以 偏置电流源和接地之间的配置，偏置电流源连接到每个配置的不同的一个端子，并将偏置电流施加到不同的一个端子。 斩波电路解调输入信号的序列，以提供相应的解调的正和负信号序列，旋转电流霍尔传感器的残留偏移校准信号基于解调的正和负信号的序列。

公开(公告)号：US09116196B2

公开(公告)日：2015-08-25

申请号：US14538042

申请日：2014-11-11

Applicant: Infineon Technologies AG

Inventor： Udo Ausserlechner ,  Mario Motz

IPC: G01R33/07 ,  H01L27/22

CPC classification number: G01R33/077 ,  G01R33/07 ,  G01R33/075 ,  H01L27/22 ,  H01L43/065

Abstract: One embodiment of the present invention relates to a vertical Hall-effect device. The device includes at least two supply terminals arranged to supply electrical energy to the first Hall-effect region; and at least one Hall signal terminal arranged to provide a first Hall signal from the first Hall-effect region. The first Hall signal is indicative of a magnetic field which is parallel to the surface of the semiconductor substrate and which acts on the first Hall-effect region. One or more of the at least two supply terminals or one or more of the at least one Hall signal terminal comprises a force contact and a sense contact.

Abstract translation: 本发明的一个实施例涉及一种垂直霍尔效应装置。 该装置包括至少两个电源端子，其布置成向第一霍尔效应区域提供电能; 以及至少一个霍尔信号端子，其布置成从第一霍尔效应区域提供第一霍尔信号。 第一霍尔信号表示与半导体衬底的表面平行的并且作用在第一霍尔效应区上的磁场。 所述至少两个供电端子中的一个或多个或所述至少一个霍尔信号端子中的一个或多个包括力接触件和感测接点。

公开(公告)号：US20150138906A1

公开(公告)日：2015-05-21

申请号：US14085991

申请日：2013-11-21

Applicant: Infineon Technologies AG

Inventor： Wolfgang Scherr ,  Michael Sorger ,  Guenther Wellenzohn ,  Magdalena Forster ,  Philemon Schweizer ,  Katharina Schmut ,  Bernhard Goller ,  Mario Motz

IPC: G11C5/14

CPC classification number: G11C5/141

Abstract: A self powered memory system is disclosed. The system includes a volatile supply component, a battery component, a switch component, and a volatile memory component. The volatile supply component is configured to provide a time varying supply. The battery component is configured to generate a non-volatile supply. The switch component is configured to generate a persistent supply from the time varying supply and the non-volatile supply. The volatile memory component is configured to maintain data by using the persistent supply.

Abstract translation: 公开了一种自供电的存储器系统。 该系统包括易失性电源组件，电池组件，开关组件和易失性存储器组件。 易失性供应部件配置成提供时变电源。 电池组件配置成产生非易失性电源。 开关组件被配置为从时变电源和非易失性电源产生持续电源。 易失性存储器组件被配置为通过使用持续电源来维护数据。

公开(公告)号：US20150137805A1

公开(公告)日：2015-05-21

申请号：US14596436

申请日：2015-01-14

Applicant: Infineon Technologies AG

Inventor： Mario Motz ,  Udo Ausserlechner

IPC: G01R33/07 ,  H01L43/06

CPC classification number: G01R33/077 ,  G01R33/066 ,  G01R33/07 ,  H01L27/22 ,  H01L43/065

Abstract: A vertical Hall sensor includes first and second vertical Hall effect regions formed in a semiconductor substrate and of the same doping type, with first and second pluralities of contacts arranged at one side of the first or second vertical Hall effect regions, respectively. The second vertical Hall effect region is connected in series with the first vertical Hall effect region regarding a power supply to the first and second vertical Hall effect regions. The vertical Hall sensor further includes first and second layers adjacent to the first and second vertical Hall effect regions at a side other than a side of the first or second pluralities of contacts. The first and second layers have different doping properties than the first and second vertical Hall effect regions and insulate the first and second vertical Hall effect regions from a bulk of the semiconductor substrate by at least one reverse-biased p-n junction per vertical Hall effect region during an operation of the vertical Hall sensor.

Abstract translation: 垂直霍尔传感器包括形成在半导体衬底中并且具有相同掺杂类型的第一和第二垂直霍尔效应区域，第一和第二多个触点分别布置在第一或第二垂直霍尔效应区域的一侧。 关于第一和第二垂直霍尔效应区域的电力供应，第二垂直霍尔效应区域与第一垂直霍尔效应区域串联连接。 垂直霍尔传感器还包括在除了第一或第二多个触点的一侧以外的一侧与第一和第二垂直霍尔效应区域相邻的第一和第二层。 第一和第二层具有与第一和第二垂直霍尔效应区域不同的掺杂特性，并且使绝缘半导体衬底的第一和第二垂直霍尔效应区域与每个垂直霍尔效应区域至少一个反向偏置pn结隔离 垂直霍尔传感器的操作。