Apparatuses and methods for setting a duty cycle adjuster for improving clock duty cycle

    公开(公告)号:US10783940B2

    公开(公告)日:2020-09-22

    申请号:US16799599

    申请日:2020-02-24

    Inventor: Kang-Yong Kim

    Abstract: Apparatuses and methods for setting a duty cycler adjuster for improving clock duty cycle are disclosed. The duty cycle adjuster may be adjusted by different amounts, at least one smaller than another. Determining when to use the smaller adjustment may be based on duty cycle results. A duty cycle monitor may have an offset. A duty cycle code for the duty cycle adjuster may be set to an intermediate value of a duty cycle monitor offset. The duty cycle monitor offset may be determined by identifying duty cycle codes for an upper and for a lower boundary of the duty cycle monitor offset.

    System-level timing budget improvements

    公开(公告)号:US10593383B1

    公开(公告)日:2020-03-17

    申请号:US16121217

    申请日:2018-09-04

    Inventor: Kang-Yong Kim

    Abstract: Methods, systems, and devices for system-level timing budget are described. Each memory die in a memory device may determine an offset between its system clock signal and its data clock signal. The offsets of each memory die in the memory device may be different; e.g., having different magnitudes and/or polarities. A memory die in the memory device may adjust its own data clock signal by a delay that is based on the offsets of two or more memory die in the device. The memory die may adjust its data clock signal by setting a fuse in a delay adjuster on the memory die. Adjusting the data clock signal may match an offset of a first memory die with an offset of a second memory die.

    Apparatuses and methods including memory commands for semiconductor memories

    公开(公告)号:US10467158B2

    公开(公告)日:2019-11-05

    申请号:US16035452

    申请日:2018-07-13

    Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

    APPARATUSES AND METHODS INCLUDING MEMORY COMMANDS FOR SEMICONDUCTOR MEMORIES

    公开(公告)号:US20190163653A1

    公开(公告)日:2019-05-30

    申请号:US16035452

    申请日:2018-07-13

    Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

    APPARATUSES AND METHODS INCLUDING MEMORY COMMANDS FOR SEMICONDUCTOR MEMORIES

    公开(公告)号:US20190163652A1

    公开(公告)日:2019-05-30

    申请号:US16035414

    申请日:2018-07-13

    Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

    APPARATUSES AND METHODS FOR DETERMINING A PHASE RELATIONSHIP BETWEEN AN INPUT CLOCK SIGNAL AND A MULTIPHASE CLOCK SIGNAL

    公开(公告)号:US20180247683A1

    公开(公告)日:2018-08-30

    申请号:US15445935

    申请日:2017-02-28

    CPC classification number: G11C7/222 G11C7/109 G11C11/4076 G11C2207/2272

    Abstract: Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.

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