公开(公告)号：US11784206B2

公开(公告)日：2023-10-10

申请号：US17080780

申请日：2020-10-26

Applicant: OmniVision Technologies, Inc.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/14812

Abstract: A pixel-array substrate includes a floating diffusion region and a first photodiode formed in a semiconductor substrate. A top surface of the semiconductor substrate defines a trench 1A and a trench 1B each (i) extending into the semiconductor substrate away from a planar region of the top surface between the trench 1A and the trench 1B and (ii) having a respective distal end, with respect to the floating diffusion region, located between the floating diffusion region and the first photodiode. In a horizontal plane parallel to the top surface and along an inter-trench direction between the trench 1A and the trench 1B, a first spatial separation between the trench 1A and the trench 1B increases with increasing distance from the floating diffusion region.

公开(公告)号：US20230307484A1

公开(公告)日：2023-09-28

申请号：US17701632

申请日：2022-03-22

Applicant: Omnivision Technologies, Inc.

Inventor： Shiyu Sun ,  Yuanwei Zheng ,  Gang Chen ,  Sing-Chung Hu ,  Armin Yazdani

IPC: H01L27/146

CPC classification number: H01L27/14656

Abstract: A pixel cell is formed on a semiconductor substrate having a front surface. The pixel cell includes a photodiode, a floating diffusion region, and a transfer gate. The photodiode is disposed in the semiconductor substrate. The floating diffusion region includes a first doped region disposed in the semiconductor substrate, wherein the first doped region extends from the front surface to a first junction depth in the semiconductor substrate. The transfer gate is configured to selectively couple the photodiode to the floating diffusion region controlling charge transfer between the photodiode and the floating diffusion region. The transfer gate includes a planar gate disposed on the front surface of the semiconductor substrate and a pair of vertical gate electrodes. Each vertical gate electrode extending a gate depth from the planar gate into the semiconductor substrate. The first junction depth is greater than the gate depth.

公开(公告)号：US11574947B2

公开(公告)日：2023-02-07

申请号：US16996804

申请日：2020-08-18

Applicant: OmniVision Technologies, Inc.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146

Abstract: A photodiode array has buried photodiodes and vertical selection transistors. Trenches are lined with gate oxide and metallic plugs of first material lie within the trenches. Gate contacts of second material contact the metallic plugs, with photodiode diffusion regions adjacent the trenches as sources of vertical transistors, the metallic plugs form gates of the vertical transistors, and buried photodiode regions form sources of the vertical transistors. In embodiments, the first conductive material is tungsten, titanium nitride, titanium carbide, or aluminum and the second conductive material is polysilicon. The array is formed by trenching, growing gate oxide, and depositing first material in the trenches. The first material is etched to define metallic plugs, the second material is deposited onto the metallic plugs then masked and etched; and drain regions implanted. Etching the second material is performed by a reactive ion etch that stops upon reaching the metallic plugs.

公开(公告)号：US11563044B2

公开(公告)日：2023-01-24

申请号：US16905670

申请日：2020-06-18

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen

IPC: H01L27/146

Abstract: A pixel-array substrate includes a semiconductor substrate and a passivation layer. The semiconductor substrate includes a pixel array surrounded by a periphery region. A back surface of the semiconductor substrate forms, in the periphery region, a plurality of first peripheral-trenches extending into the semiconductor substrate. The passivation layer is on the back surface and lines each of the plurality of first peripheral-trenches.

公开(公告)号：US20220352220A1

公开(公告)日：2022-11-03

申请号：US17243024

申请日：2021-04-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Yuanliang Liu ,  Keiji Mabuchi ,  Gang Chen ,  Bill Phan ,  Duli Mao ,  Takeshi Takeda

IPC: H01L27/146

Abstract: An image sensor comprises a first photodiode region and circuitry. The first photodiode region is disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate to form a first pixel. The first photodiode region includes a first segment coupled to a second segment. The circuitry includes at least a first electrode associated with a first transistor. The first electrode is disposed, at least in part, between the first segment and the second segment of the first photodiode region such that the circuity is at least partially surrounded by the first photodiode region when viewed from the first side of the semiconductor substrate.

公开(公告)号：US11355537B2

公开(公告)日：2022-06-07

申请号：US16655017

申请日：2019-10-16

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146

Abstract: A pixel cell includes a photodiode buried beneath a first side of semiconductor material and coupled to photogenerate image charge in response to incident light. A transfer gate is disposed over the photodiode and includes a vertical transfer gate portion extending a first distance from the first side into the semiconductor material. A floating diffusion region is disposed in the semiconductor material proximate to the transfer gate and is coupled to transfer the image charge from the photodiode toward the first side of the semiconductor material and into the floating diffusion region in response to a transfer control signal. A first pixel transistor having a first gate is disposed over the photodiode proximate to the first side of the semiconductor material. The first gate has a ring structure laterally surrounding the floating diffusion region and the transfer gate at the first side of the semiconductor material.

公开(公告)号：US11302727B2

公开(公告)日：2022-04-12

申请号：US16689938

申请日：2019-11-20

Applicant: OmniVision Technologies, Inc.

Inventor： Hui Zang ,  Qin Wang ,  Gang Chen

IPC: H01L27/14 ,  H01L27/146 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423

Abstract: A pixel includes a semiconductor substrate, a photodiode region, a floating diffusion region, and a dielectric layer. The substrate has a top surface forming a trench lined by the dielectric layer, and having a trench depth relative to a planar region of the top surface. The photodiode region is in the substrate and includes a bottom photodiode section beneath the trench and a top photodiode section adjacent to the trench, adjoining the bottom photodiode section, and extending toward the planar region to a photodiode depth less than the trench depth. The floating diffusion region is adjacent to the trench and has a junction depth less than the trench depth. A top region of the dielectric layer is between the planar region and the junction depth. A bottom region of the dielectric layer is between the photodiode depth and the trench depth, and thicker than the top region.

公开(公告)号：US20220059599A1

公开(公告)日：2022-02-24

申请号：US16998783

申请日：2020-08-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang ,  Gang Chen

IPC: H01L27/146

Abstract: A device includes a photodiode, a floating diffusion region, a transfer gate, and a channel region. The photodiode is disposed in a semiconductor material. The photodiode is coupled to generate charge in response to incident light. The floating diffusion region is disposed in the semiconductor material. The transfer gate is disposed between the photodiode and the floating diffusion region. The channel region associated with the transfer gate is in the semiconductor material proximate to the transfer gate. The transfer gate is coupled to transfer the charge from the photodiode to the floating diffusion region through the channel region in response to a transfer signal coupled to be received by the transfer gate. The transfer gate includes a plurality of fin structures that extend into the semiconductor material and the photodiode.

公开(公告)号：US20210193702A1

公开(公告)日：2021-06-24

申请号：US16720236

申请日：2019-12-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146

Abstract: A semiconductor structure for a CMOS image sensor includes a semiconductor substrate having a first side and a second side. A photodiode is disposed in the semiconductor substrate proximate to the first side. The photodiode accumulates image charge photogenerated in the photodiode in response to incident light directed through the second side. A deep trench isolation structure enclosing the photodiode. The deep trench isolation structure extends from the second side toward the first side. The deep trench isolation structure includes a light absorption region disposed at a first end of the deep trench isolation structure toward the first side.

公开(公告)号：US20210118925A1

公开(公告)日：2021-04-22

申请号：US16655017

申请日：2019-10-16

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146

Abstract: A pixel cell includes a photodiode buried beneath a first side of semiconductor material and coupled to photogenerate image charge in response to incident light. A transfer gate is disposed over the photodiode and includes a vertical transfer gate portion extending a first distance from the first side into the semiconductor material. A floating diffusion region is disposed in the semiconductor material proximate to the transfer gate and is coupled to transfer the image charge from the photodiode toward the first side of the semiconductor material and into the floating diffusion region in response to a transfer control signal. A first pixel transistor having a first gate is disposed over the photodiode proximate to the first side of the semiconductor material. The first gate has a ring structure laterally surrounding the floating diffusion region and the transfer gate at the first side of the semiconductor material.