-
公开(公告)号：US20130087785A1
公开(公告)日：2013-04-11
申请号：US13688596
申请日：2012-11-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kengo AKIMOTO , Toshinari SASAKI
IPC: H01L29/786
CPC classification number: H01L29/7869 , G02F1/1368 , G02F1/167 , H01L27/1225 , H01L27/1248 , H01L27/1259 , H01L27/127 , H01L27/3262 , H01L29/04 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78693 , H01L29/78696
Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.
Abstract translation: 目的是提高使用氧化物半导体的薄膜晶体管的场效应迁移率。 另一个目的是抑制即使在具有改善的场效应迁移率的薄膜晶体管中，关断电流的增加。 在使用氧化物半导体层的薄膜晶体管中，通过形成具有比氧化物半导体层和栅极绝缘层之间的氧化物半导体层更高的导电性和更小的厚度的半导体层，薄膜晶体管的场效应迁移率可以是 可以抑制切断电流的提高。
-
公开(公告)号：US20130082255A1
公开(公告)日：2013-04-04
申请号：US13680345
申请日：2012-11-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kengo AKIMOTO , Toshinari SASAKI , Hideaki KUWABARA
IPC: H01L29/786
CPC classification number: H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/45 , H01L29/66742 , H01L29/786 , H01L29/78606 , H01L29/7869 , H01L29/78696
Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
Abstract translation: 在使用氧化物半导体作为有源层的薄膜晶体管中，为了防止用作有源层的氧化物半导体区域的组成，膜质量，界面等的变化，并且为了稳定化 薄膜晶体管的电气特性。 在其中使用第一氧化物半导体区域作为有源层的薄膜晶体管中，在第一氧化物半导体区域和用于薄的第一氧化物半导体区域的保护绝缘层之间形成具有比第一氧化物半导体区域低导电性的第二氧化物半导体区域 由此第二氧化物半导体区域用作第一氧化物半导体区域的保护层; 因此，可以防止第一氧化物半导体区域的组成变化或膜质量的劣化，并且能够稳定薄膜晶体管的电特性。
-
公开(公告)号：US20130037799A1
公开(公告)日：2013-02-14
申请号：US13632709
申请日：2012-10-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
IPC: H01L33/08
CPC classification number: H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1218 , H01L27/124 , H01L27/127 , H01L29/24 , H01L29/66969 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , H01L29/7869 , H01L29/78696
Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
-
公开(公告)号：US20250160003A1
公开(公告)日：2025-05-15
申请号：US19019827
申请日：2025-01-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshinari SASAKI , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
-
公开(公告)号：US20250151404A1
公开(公告)日：2025-05-08
申请号：US19011968
申请日：2025-01-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Toshinari SASAKI , Junichiro SAKATA , Masashi TSUBUKU
IPC: H10D86/60 , H10D30/67 , H10D62/80 , H10D64/27 , H10D64/62 , H10D86/40 , H10K59/121 , H10K59/123
Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
-
Patent Agency Ranking
公开(公告)号：US20240234581A1
公开(公告)日：2024-07-11
申请号：US18582949
申请日：2024-02-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hajime KIMURA , Kengo AKIMOTO , Masashi TSUBUKU , Toshinari SASAKI
IPC: H01L29/786 , G09G3/36 , H01L27/12
CPC classification number: H01L29/78693 , G09G3/3648 , H01L27/1225 , H01L29/78618 , G09G2300/0842
Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
-
公开(公告)号：US20240105733A1
公开(公告)日：2024-03-28
申请号：US18519471
申请日：2023-11-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Toshinari SASAKI , Junichiro SAKATA , Masashi TSUBUKU
IPC: H01L27/12 , H01L29/24 , H01L29/423 , H01L29/45 , H01L29/786
CPC classification number: H01L27/1225 , H01L27/1248 , H01L27/1255 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/458 , H01L29/4908
Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
-
公开(公告)号：US20230299209A1
公开(公告)日：2023-09-21
申请号：US18136963
申请日：2023-04-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hajime KIMURA , Kengo AKIMOTO , Masashi TSUBUKU , Toshinari SASAKI
IPC: H01L29/786 , G09G3/36 , H01L27/12
CPC classification number: H01L29/78693 , G09G3/3648 , H01L27/1225 , H01L29/78618 , G09G2300/0842
Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
-
公开(公告)号：US20230044086A1
公开(公告)日：2023-02-09
申请号：US17964203
申请日：2022-10-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junichi KOEZUKA , Toshinari SASAKI , Katsuaki TOCHIBAYASHI , Shunpei YAMAZAKI
IPC: H01L29/786 , H01L27/12 , H01L29/66 , H01L27/146
Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.
-
公开(公告)号：US20220037153A1
公开(公告)日：2022-02-03
申请号：US17500149
申请日：2021-10-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Miyuki HOSOBA , Kosei NODA , Hiroki OHARA , Toshinari SASAKI , Junichiro SAKATA
Abstract: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.
-
-
-
-
-
-
-
-
-
Search Results
152
records
(took 0.033 seconds)
