公开(公告)号：US20230196843A1

公开(公告)日：2023-06-22

申请号：US17925878

申请日：2021-05-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Koji KUSUNOKI ,  Shunpei YAMAZAKI

IPC: G06V40/70 ,  G06F3/042 ,  G06V40/13 ,  G06F21/32

CPC classification number: G06V40/70 ,  G06F3/042 ,  G06F21/32 ,  G06V40/1306 ,  G06V40/1318

Abstract: An electronic device having an authentication method with high security is provided. The electronic device includes a pixel portion, a sensor portion, and an authentication portion. The pixel portion includes a display element and a light-receiving element. The pixel portion includes a first region and has a function of making the display element of the first region emit light. The pixel portion has a function of obtaining first authentication information by capturing an image of an object that is in contact with the first region with the use of the light-receiving element. The sensor portion includes a second region and has a function of obtaining second authentication information by capturing an image of an object that is in contact with the second region. The authentication portion has a function of performing first authentication processing using the first authentication information. The authentication portion has a function of performing second authentication processing using the second authentication information.

公开(公告)号：US20230195165A1

公开(公告)日：2023-06-22

申请号：US18090566

申请日：2022-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA

IPC: G06F1/16 ,  H04N23/51 ,  H04N23/53 ,  H04N23/56 ,  H04N23/63

CPC classification number: G06F1/1616 ,  G06F1/1626 ,  G06F1/1641 ,  G06F1/1643 ,  G06F1/1647 ,  G06F1/1652 ,  H04N23/51 ,  H04N23/53 ,  H04N23/56 ,  H04N23/63 ,  H04N23/632

Abstract: To provide an electronic device capable of a variety of display. To provide an electronic device capable of being operated in a variety of ways. An electronic device includes a display device and first to third surfaces. The first surface includes a region in contact with the second surface, the second surface includes a region in contact with the third surface, and the first surface includes a region opposite to the third surface. The display device includes first to third display regions. The first display region includes a region overlapping with the first surface, the second display region includes a region overlapping with the second surface, and the third display region includes a region overlapping with the third surface. The first display region has a larger area than the third display region.

公开(公告)号：US20230141951A1

公开(公告)日：2023-05-11

申请号：US17905093

申请日：2021-03-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroshi KADOMA ,  Kazutaka KURIKI ,  Yumiko YONEDA ,  Kaori OGITA ,  Fumiko TANAKA ,  Yohei MOMMA ,  Shunpei YAMAZAKI

IPC: H01M10/0565 ,  H01M4/38 ,  H01M4/04

CPC classification number: H01M10/0565 ,  H01M4/386 ,  H01M4/0404 ,  H01M2004/027 ,  H01M2300/0082

Abstract: Interface contact between a polymer electrolyte and an active material layer is improved. A secondary battery with improved discharge capacity is provided. The secondary battery includes a positive electrode, a negative electrode, and an electrolyte layer between the positive electrode and the negative electrode. The positive electrode includes a positive electrode active material, a first lithium-ion conductive polymer, a first lithium salt, and a conductive material over a positive electrode current collector. The electrolyte layer includes a second lithium-ion conductive polymer and a second lithium salt. The conductive material is preferably graphene. The negative electrode preferably includes a negative electrode active material, a third lithium-ion conductive polymer, a third lithium salt, and a second conductive material over a negative electrode current collector.

公开(公告)号：US20230141429A1

公开(公告)日：2023-05-11

申请号：US17883683

申请日：2022-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L29/7869 ,  H01L29/786 ,  H01L29/24 ,  H01L29/7832 ,  H01L29/78696

Abstract: A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which carriers flow is separated from the gate insulating film is employed. Specifically, an oxide semiconductor layer having high conductivity is provided between two oxide semiconductor layers. Further, an impurity element is added to the oxide semiconductor layer in a self-aligned manner so that the resistance of a region in contact with an electrode layer is reduced. Further, the oxide semiconductor layer in contact with the gate insulating layer has a larger thickness than the oxide semiconductor layer having high conductivity.

公开(公告)号：US20230140016A1

公开(公告)日：2023-05-04

申请号：US18089708

申请日：2022-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC: H01L27/12 ,  G02F1/1362 ,  H10K59/131 ,  H01L29/786

Abstract: With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

公开(公告)号：US20230139527A1

公开(公告)日：2023-05-04

申请号：US18089703

申请日：2022-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki KUROKAWA ,  Shunpei YAMAZAKI

IPC: G11C11/16 ,  G06F9/4401 ,  G06F21/57 ,  G11C5/14 ,  G11C11/402 ,  G11C11/404 ,  H10B12/00

Abstract: The operation speed of a semiconductor device is improved. The semiconductor device includes a first memory region and a second memory region; in the semiconductor device, a first memory cell in the first memory region is superior to a second memory cell in the second memory region in data retention characteristics such as a large storage capacitance or a large channel length—channel width ratio (L/W) of a transistor. When the semiconductor device is used as a cache memory or a main memory device of a processor, the first memory region mainly stores a start-up routine and is not used as a work region for arithmetic operation, and the second memory region is used as a work region for arithmetic operation. The first memory region becomes an accessible region when the processor is booted, and the first memory region becomes an inaccessible region when the processor is in normal operation.

公开(公告)号：US20230110947A1

公开(公告)日：2023-04-13

申请号：US17904015

申请日：2021-02-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Yuji EGI ,  Tetsuya KAKEHATA

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/46

Abstract: A novel deposition method of a metal oxide is provided. The deposition method includes a first step of supplying a first precursor to a chamber; a second step of supplying a second precursor to the chamber; a third step of supplying a third precursor to the chamber; and a fourth step of introducing an oxidizer into the chamber after the first step, the second step, and the third step. The first to third precursors are different kinds of precursors, and a substrate placed in the chamber in the first to fourth steps is heated to a temperature higher than or equal to 300° C. and lower than or equal to decomposition temperatures of the first to third precursors.

公开(公告)号：US20230097298A1

公开(公告)日：2023-03-30

申请号：US18070638

申请日：2022-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI

IPC: H01L29/786 ,  C01G15/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/78 ,  H01L29/66

Abstract: A novel material and a transistor including the novel material are provided. One embodiment of the present invention is a composite oxide including at least two regions. One of the regions includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu) and the other of the regions includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). In an analysis of the composite oxide by energy dispersive X-ray spectroscopy, the detected concentration of the element M1 in a first region is less than the detected concentration of the element M2 in a second region, and a surrounding portion of the first region is unclear in an observed mapping image of the energy dispersive X-ray spectroscopy.

公开(公告)号：US20230069109A1

公开(公告)日：2023-03-02

申请号：US17797189

申请日：2021-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA

IPC: H01L29/04 ,  H01L29/66 ,  H01L29/786

Abstract: A novel metal oxide and a formation method thereof are provided. The metal oxide includes a first crystal, a second crystal, and a region positioned between the first crystal and the second crystal. The c-axis of the first crystal is substantially parallel to the c-axis of the second crystal. The crystallinity of the region is lower than those of the first crystal and the second crystal. The width of the region in the direction perpendicular to the c-axis of the first crystal is greater than 0 nm and less than 1.5 nm. The first crystal and the second crystal each have a layered crystal structure.

公开(公告)号：US20230055667A1

公开(公告)日：2023-02-23

申请号：US17793194

申请日：2021-01-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Hiroshi KADOMA ,  Yoshihiro KOMATSU ,  Shiori SAGA ,  Shunpei YAMAZAKI

IPC: H01M4/525 ,  C01G53/00

Abstract: A positive electrode active material with little deterioration is provided. Positive electrode active material particles with little deterioration are provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. A novel power storage device is provided. A secondary battery includes a positive electrode and a negative electrode. In the secondary battery, the positive electrode includes a positive electrode active material; the positive electrode active material includes a crystal exhibiting a layered rock-salt crystal structure; the crystal is represented by the space group R-3m; the positive electrode active material is a particle containing lithium, cobalt, titanium, magnesium, and oxygen; the concentration of the magnesium in a surface portion of the particle is higher than the concentration of the magnesium in an inner portion of the particle; and in the positive electrode active material, the concentration of the titanium in the surface portion of the particle is higher than the concentration of the titanium in the inner portion of the particle.