公开(公告)号：US20150228889A1

公开(公告)日：2015-08-13

申请号：US14429230

申请日：2013-08-09

Applicant: SONY CORPORATION

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

CPC classification number: G11B5/3146 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L23/528 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: There is provided a storage element including a layered construction including a storage layer that has magnetization perpendicular to a surface of the storage layer and whose direction of magnetization is changed corresponding to information, a pinned magnetization layer that has magnetization perpendicular to a surface of the pinned magnetization layer and serves as a standard for information stored in the storage layer, and an insulating layer that is composed of a non-magnetic material and is provided between the storage layer and the pinned magnetization layer.

Abstract translation: 提供了一种存储元件，其包括层叠结构，其包括存储层，该存储层具有垂直于存储层的表面的磁化强度，并且其磁化方向根据信息而改变;具有垂直于固定的表面的磁化的钉扎磁化层 并且用作存储在存储层中的信息的标准，以及由非磁性材料构成并设置在存储层和被钉扎磁化层之间的绝缘层。

公开(公告)号：US20150221862A1

公开(公告)日：2015-08-06

申请号：US14607487

申请日：2015-01-28

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).

Abstract translation: 磁阻元件包括层叠结构，其包括多个固定层，由非磁性材料形成的中间层和记录层，所述多个固定层经由非磁性层层叠，所述多个固定层具有 至少第一固定层和第二固定层，满足以下公式：S1> S2（其中S1是与中间层相邻的第一固定层的面向中间层的部分的面积，S2是 固定层的除了第一固定层之外的固定层中具有最小面积的区域）。

公开(公告)号：US09099642B2

公开(公告)日：2015-08-04

申请号：US14559167

申请日：2014-12-03

Applicant: Sony Corporation

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

IPC: G11C11/00 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

Abstract: Spin transfer torque memory elements and memory devices are provided. In one embodiment, the spin transfer torque memory element includes a first portion including CoFeB, a second portion including CoFeB, an intermediate portion interposed between the first and second portions, a third portion adjoining the second portion opposite the intermediate portion, and a fourth portion adjoining the third portion opposite the second portion. The intermediate portion includes MgO. The third portion includes at least one of Ag, Au, Cr, Cu, Hf, Mo, Nb, Os, Re, Ru, Ta, W, and Zr. The fourth portion includes at least one alloy of Co, Fe, Pd, and Pt.

Abstract translation: 提供自旋转矩记忆元件和存储器件。 在一个实施例中，自旋转移转矩存储元件包括包括CoFeB的第一部分，包括CoFeB的第二部分，介于第一和第二部分之间的中间部分，邻接与中间部分相对的第二部分的第三部分，以及第四部分 邻接与第二部分相对的第三部分。 中间部分包括MgO。 第三部分包括Ag，Au，Cr，Cu，Hf，Mo，Nb，Os，Re，Ru，Ta，W和Zr中的至少一种。 第四部分包括至少一种Co，Fe，Pd和Pt的合金。

公开(公告)号：US09070462B2

公开(公告)日：2015-06-30

申请号：US14184955

申请日：2014-02-20

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/00 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02

Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

Abstract translation: 存储元件具有分层结构，包括具有垂直于磁化方向根据信息而变化的膜面的磁化的存储层，并且包括Co-Fe-B磁性层，通过施加磁化方向来改变磁化方向 分层结构的层叠方向上的电流以将信息记录在存储层中，具有垂直于成为存储在存储层中的信息的基底的膜面的磁化的磁化固定层和形成的中间层 并且设置在存储层和磁化固定层之间，第一氧化物层和第二氧化物层。

公开(公告)号：US09053800B2

公开(公告)日：2015-06-09

申请号：US13680669

申请日：2012-11-19

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/00 ,  G11C11/16

CPC classification number: G11C11/161 ,  G11C7/04

Abstract: There is provided a memory element having a layered structure, including a memory layer having magnetization perpendicular to a film face in which a magnetization direction is changed corresponding to information, and including a Co—Fe—B magnetic layer and at least on non-magnetic layer; the magnetization direction being changed by flowing a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to the film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, further including a laminated structure where an oxide layer, the Co—Fe—B magnetic layer and the non-magnetic layer are laminated is formed.

Abstract translation: 提供了一种具有分层结构的存储元件，包括具有垂直于膜面的磁化的存储层，其中磁化方向根据信息而改变，并且包括Co-Fe-B磁性层和至少在非磁性 层; 通过使分层结构的叠层方向上的电流流动来改变磁化方向，以将信息记录在存储层中，具有垂直于胶片面的磁化的磁化固定层成为存储在存储层中的信息的基础 以及由非磁性材料形成并设置在所述存储层和所述磁化固定层之间的中间层，还包括其中氧化物层，所述Co-Fe-B磁性层和所述非磁性固定层的层叠结构， 形成磁性层。

公开(公告)号：US09048416B2

公开(公告)日：2015-06-02

申请号：US14456429

申请日：2014-08-11

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/15 ,  G11C11/16 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer.

Abstract translation: 根据一些方面，分层结构包括存储层，磁化固定层和隧道绝缘层。 存储层具有垂直于膜面的磁化，其中通过在分层结构的层叠方向上施加电流，磁化方向被配置为根据信息而被改变。 磁化固定层具有与存储层的磁化方向平行或反平行的磁化，并且包括包括多个铁磁层和一个或多个非磁性层的层叠铁极化结构，并且包括包含反铁磁性材料的层 位于第一铁磁层和非磁性层之间的多个铁磁层的第一铁磁层。 隧道绝缘层位于存储层和磁化固定层之间。

公开(公告)号：US20150145080A1

公开(公告)日：2015-05-28

申请号：US14590339

申请日：2015-01-06

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.

Abstract translation: 公开了一种存储元件，其包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录 执行信息的存储层接收的有效反磁场的大小小于存储层的饱和磁化量，并且关于存储层与其接触的绝缘层和另一侧层 与绝缘层相对的一侧，至少与记忆层接触的界面由氧化膜形成。

公开(公告)号：US20140319521A1

公开(公告)日：2014-10-30

申请号：US14358645

申请日：2012-10-31

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

IPC: H01L43/02 ,  H01L43/10

CPC classification number: H01L43/02 ,  G01R33/093 ,  G11B5/3909 ,  G11C11/16 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L27/228 ,  H01L27/2481 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: [Object] To provide a memory element having well-balanced properties while ensuring the thermal stability.[Solving Means] A memory element includes a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.Then, the memory layer includes a multilayer structure layer in which a non-magnetic material and an oxide are laminated, the direction of the magnetization of the memory layer being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer.

Abstract translation: 提供具有良好平衡特性的存储元件，同时确保热稳定性。 存储元件包括层叠结构，该层叠结构包括磁化方向垂直于膜面的磁化垂直于磁化方向依据信息而变化的存储层，具有垂直于膜面的磁化的磁化固定层，成为 存储在存储层中的信息的基础，以及由非磁性材料形成并设置在存储层和磁化固定层之间的中间层。 然后，存储层包括其中层叠非磁性材料和氧化物的多层结构层，通过在分层结构的层叠方向上施加电流来改变存储层的磁化方向以记录信息 在内存层。

公开(公告)号：US20140284741A1

公开(公告)日：2014-09-25

申请号：US14354760

申请日：2012-10-31

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L43/02

CPC classification number: G11C11/161 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/155 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: [Object] To provide a storage element and a storage apparatus capable of performing writing operation in a short time without generating write errors.[Solving Means] A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract translation: 提供能够在短时间内执行写入操作而不产生写入错误的存储元件和存储装置。 [解决方案]存储元件包括层结构，该层结构包括具有根据信息改变的磁化方向的存储层，具有固定的磁化方向的磁化固定层和设置在其间的中间层，该中间层包含非磁性 材料。 磁化固定层具有至少两个铁磁层，其具有从垂直于膜表面的方向倾斜的磁化方向，这两个铁磁层层叠并磁耦合在其间插入耦合层。 该构造可以有效地防止由于存储层和磁化固定层的磁化方向基本上平行或反平行的磁化反转时间的发散，减少写入错误，并且能够在短时间内实现写入操作。

公开(公告)号：US08842465B2

公开(公告)日：2014-09-23

申请号：US13675328

申请日：2012-11-13

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/15 ,  G11C11/16

CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A memory element includes a layered structure. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, and the direction of the magnetization is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, has a laminated ferri-pinned structure including at least two ferromagnetic layers and a non-magnetic layer, and includes an anti-ferromagnetic oxide layer formed on any of the at least two ferromagnetic layers. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

Abstract translation: 存储元件包括分层结构。 分层结构包括存储层，磁化固定层和中间层。 存储层具有垂直于膜面的磁化，其中磁化方向根据信息而改变，并且通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储器中 层。 磁化固定层具有垂直于成为存储在存储层中的信息的基底的膜面的磁化，具有包括至少两个铁磁层和非磁性层的叠层铁钉结构， 形成在所述至少两个铁磁层中的任一个上的铁磁性氧化物层。 中间层由非磁性材料形成，并且设置在存储层和磁化固定层之间。