公开(公告)号：US06885521B2

公开(公告)日：2005-04-26

申请号：US09834812

申请日：2001-04-13

Applicant: Shuichi Kikuchi

Inventor： Shuichi Kikuchi

IPC: G11B23/03 ,  G11B23/38 ,  G11B23/40

CPC classification number: G11B23/0326 ,  G11B23/0308

Abstract: A metal shutter for use with a disc cartridge, has a following structure. A screen portion of the shutter is formed on an outside surface thereof with an indication area. The indication area includes a stamped rough surface part which is configured to constitute a given pattern. The screen portion is formed, on an inside surface thereof at a portion corresponding to the indication area, with another stamped rough surface area.

Abstract translation: 用于盘盒的金属快门具有以下结构。 快门的屏幕部分在其外表面上形成有指示区域。 指示区域包括被构造成构成给定图案的冲压粗糙表面部分。 屏幕部分在其对应于指示区域的部分的内表面上形成有另一个冲压的粗糙表面区域。

公开(公告)号：US06696734B2

公开(公告)日：2004-02-24

申请号：US09829258

申请日：2001-04-09

Applicant: Shuichi Kikuchi ,  Eiji Nishibe ,  Takuya Suzuki

Inventor： Shuichi Kikuchi ,  Eiji Nishibe ,  Takuya Suzuki

IPC: H01L2976

CPC classification number: H01L29/66659 ,  H01L21/26586 ,  H01L29/7835

Abstract: A semiconductor device has a gate electrode formed on P type semiconductor substrate through a gate insulation film, a low concentration N− type drain region formed so as to be adjacent to the gate electrode, a high concentration N+ type drain region separated from the other end of said gate electrode and included in said low N− type drain region, and a middle concentration N type layer having high impurity concentration peak at a position of the predetermined depth in said substrate at a region spanning at least from said gate electrode to said high concentration N+ type drain region, and formed so that high impurity concentration becomes low at a region near surface of the substrate.

Abstract translation: 半导体器件具有通过栅极绝缘膜形成在P型半导体衬底上的栅极电极，与栅电极相邻形成的低浓度N-型漏极区域，与另一端分离的高浓度N +型漏极区域 并且包括在所述低N型漏极区中的中等浓度N型层和在所述衬底中至少从所述栅电极到所述高电压的区域在所述衬底中的预定深度的位置处具有高杂质浓度的中等浓度N型层 浓度N +型漏极区域，并且形成为使得在衬底的表面附近的区域中高杂质浓度变低。

公开(公告)号：US06669023B2

公开(公告)日：2003-12-30

申请号：US09940346

申请日：2001-08-27

Applicant: Shuichi Kikuchi ,  Rie Izu

Inventor： Shuichi Kikuchi ,  Rie Izu

IPC: B65D8557

CPC classification number: B42F7/145

Abstract: A storage case is comprised of a case main body, a cover, a rotating means and a tilt means. The case main body has a bottom plate, the front plate, a back plate, a right plate and a left plate which are arranged so that the front, back, right and left plates surround four sides of the bottom plate. The cover is installed to the case main body so as to open and close an opening of the case main body. The rotating means swingably and slidably connects the cover with the case main body. The rotating means has a rotation shaft installed to the cover and a bearing portion installed to the case main body. The bearing portion is formed into an elongate groove extending in a vertical direction of the case main body. The front plate is tilted forward by the tilt means.

公开(公告)号：US06614075B2

公开(公告)日：2003-09-02

申请号：US09852540

申请日：2001-05-10

Applicant: Yumiko Akaishi ,  Takuya Suzuki ,  Shinya Mori ,  Yuji Tsukada ,  Yuichi Watanabe ,  Shuichi Kikuchi

Inventor： Yumiko Akaishi ,  Takuya Suzuki ,  Shinya Mori ,  Yuji Tsukada ,  Yuichi Watanabe ,  Shuichi Kikuchi

IPC: H01L2978

CPC classification number: H01L29/66659 ,  H01L21/266 ,  H01L29/1095 ,  H01L29/7835

Abstract: A semiconductor device includes a source region 4, a channel region 8, a drain region 5 and a gate electrode which is patterned so that its side wall is tapered to be more narrow toward the top. A drift region 22 is formed between the channel region 8 and drain region 5 so as to be shallow below the gate electrode 7A (first N− layer 22A) and deep in the vicinity of the drain region 5 (second N− layer 22B). This configuration contributes to boosting the withstand voltage and reducing the “on” resistance of the semiconductor device.

Abstract translation: 半导体器件包括源极区域4，沟道区域8，漏极区域5和栅极电极，其被图案化，使得其侧壁是锥形的，以朝向顶部更窄。 在沟道区域8和漏极区域5之间形成漂移区域22，以便在栅极电极7A（第一N-层22A）的下方并且在漏极区域5（第二N-层22B）附近的深处。 该配置有助于提高耐压并降低半导体器件的“导通”电阻。

公开(公告)号：US06599782B1

公开(公告)日：2003-07-29

申请号：US09716782

申请日：2000-11-20

Applicant: Shuichi Kikuchi ,  Yumiko Akaishi ,  Takuya Suzuki

Inventor： Shuichi Kikuchi ,  Yumiko Akaishi ,  Takuya Suzuki

IPC: H01L21339

CPC classification number: H01L29/66659 ,  H01L29/0886 ,  H01L29/7835

Abstract: To enhance the withstand voltage of an LD MOS transistor, a method of fabricating a semiconductor device according to the invention is characterized in that a process for forming a drift region is composed of a step for implanting phosphorus ions and arsenic ions different in a diffusion coefficient into the superficial layer of a substrate, a step for forming a selective oxide film (a first gate insulating film) 9A and an element isolation film 9B by selective oxidation and diffusing the phosphorus ions and the arsenic ions and a step for implanting and diffusing boron ions, and in that in the step for forming the selective oxide film 9A and the element isolation film 9B by selective oxidation in a state in which an oxide film and a polycrystalline silicon film are laminated on the substrate, only a drift region formation region is selectively oxidized in a state in which the polycrystalline silicon film is removed.

Abstract translation: 为了提高LD MOS晶体管的耐受电压，根据本发明的制造半导体器件的方法的特征在于，用于形成漂移区域的工艺由用于注入扩散系数不同的磷离子和砷离子的步骤 进入基板的表层，通过选择性氧化和扩散磷离子和砷离子形成选择性氧化物膜（第一栅极绝缘膜）9A和元件隔离膜9B的步骤和用于注入和扩散硼的步骤 离子，并且在用于在氧化膜和多晶硅膜层叠在基板上的状态下通过选择性氧化形成选择性氧化物膜9A和元件隔离膜9B的步骤中，仅漂移区形成区域为 在去除多晶硅膜的状态下选择性氧化。

公开(公告)号：US06477632B1

公开(公告)日：2002-11-05

申请号：US09319621

申请日：1999-07-28

Applicant: Shuichi Kikuchi

Inventor： Shuichi Kikuchi

IPC: G06F1200

CPC classification number: G06F12/0246 ,  G06F12/0292 ,  Y02D10/13

Abstract: In order to access a memory cell array (1), an address translation table which stores a correspondence between logical and physical addresses, and an empty block table which specifies locations of empty blocks, are stored in an arbitrary block of the memory cell array (1) itself. In the case of reading data from the memory cell array (1), a physical address to read data is attained with reference to the address translation table stored in the memory cell array (1). Meanwhile, in the case of writing data, an empty block is detected from the empty block table stored in the memory cell array (1), and data is written in the empty block. Moreover, the address translation table and the empty block table which have been updated are written in another empty block.

Abstract translation: 为了访问存储单元阵列（1），存储逻辑地址和物理地址之间的对应关系的地址转换表以及指定空块位置的空块表被存储在存储单元阵列的任意块中 1）本身 在从存储单元阵列（1）读取数据的情况下，参考存储在存储单元阵列（1）中的地址转换表来获得读取数据的物理地址。 同时，在写入数据的情况下，从存储在存储单元阵列（1）中的空块表中检测出空块，并将数据写入空块。 此外，已经更新的地址转换表和空块表被写入另一个空块中。

公开(公告)号：US06292461B1

公开(公告)日：2001-09-18

申请号：US08936463

申请日：1997-09-24

Applicant: Shuichi Kikuchi ,  Takatsugu Funawatari

Inventor： Shuichi Kikuchi ,  Takatsugu Funawatari

IPC: G11B2504

CPC classification number: G11B23/0312 ,  G11B17/02 ,  G11B17/038

Abstract: A disk recording member includes a main body and a center hub mounted in a center hole of the main body. The center hub includes upper and lower hub components for holding upper and lower sides of the main body and a screw for connecting the upper and lower hub components.

Abstract translation: 盘记录部件包括主体和安装在主体的中心孔中的中心毂。 中心轮毂包括用于保持主体的上侧和下侧的上部和下部轮毂部件和用于连接上部和下部轮毂部件的螺钉。

公开(公告)号：US6114016A

公开(公告)日：2000-09-05

申请号：US174851

申请日：1998-10-19

Applicant: Kazuo Sasaki ,  Shuichi Kikuchi

Inventor： Kazuo Sasaki ,  Shuichi Kikuchi

IPC: G11B23/087 ,  B21D19/00 ,  B21D28/10 ,  B21D28/12 ,  B21D28/16 ,  B26F1/02 ,  B26F1/40 ,  G11B23/113 ,  B32B23/02 ,  G11B23/02

CPC classification number: B21D19/005 ,  B21D28/10 ,  B21D28/12 ,  B21D28/16 ,  B26F1/02 ,  B26F1/40 ,  Y10T428/24273 ,  Y10T428/24777

Abstract: A method for punching a template is provided comprising the steps of partially punching the template by applying a first punch to a first surface of the template to form a recessed portion thereof and by applying a first die to a second surface of the template to form a projected portion thereof, so as to produce a first shear plane connected with the first surface on a peripheral surface of the recessed portion and a second shear plane connected with the second surface on a peripheral surface of said projected portion; returning the projected portion so as to be substantially aligned with the recessed portion by holding the first surface and the second surface between a second punch and a second die; and fully punching the template by applying a third punch to the second surface and a third die to the first surface to as to produce a third shear plane connected with the second surface on a peripheral surface of the recessed portion and a fracture plane connected between the third shear plane and the first shear plane thereby causing a portion of the template to fully punched therefrom.

Abstract translation: 提供一种冲压模板的方法，包括以下步骤：通过将第一冲头施加到模板的第一表面以形成其凹部，并且通过将第一模具施加到模板的第二表面来部分冲压模板，以形成模板 突出部分，以便产生与凹部的周面上的第一表面连接的第一剪切平面和与所述突出部分的周面上的第二表面连接的第二剪切平面; 通过将第一表面和第二表面保持在第二冲头和第二模具之间而使突出部分返回以与凹部基本对准; 并且通过对第二表面施加第三冲头并将第三冲模施加到第一表面来完全冲压模板，以产生与凹部的外周表面上的第二表面连接的第三剪切平面和连接在凹部 第三剪切平面和第一剪切平面，从而使模板的一部分从其完全冲压。

公开(公告)号：US6104432A

公开(公告)日：2000-08-15

申请号：US745056

申请日：1996-11-07

Applicant: Akira Nakamura ,  Shuichi Kikuchi

Inventor： Akira Nakamura ,  Shuichi Kikuchi

IPC: G02B15/16 ,  G02B17/04 ,  G02B17/08 ,  H04N5/225 ,  G02B15/02

CPC classification number: G02B15/173 ,  G02B17/045 ,  G02B5/04

Abstract: A compact video camera has an image pickup lens system providing a zooming function and a wide angle field of view. The zooming function is performed by a zoom lens, while the wide angle view is achieved via a wide angle converter. The wide angle converter, located closer to the object than the zoom lens, comprises a negative lens, a positive lens, and a reflecting member located between the negative and positive lenses. With the use of the reflecting member, an optical axis of the image pickup lens system extending from the object side to the image side of the camera may be folded. The position at which the optical axis is folded is located closer to the object side than the image side.

Abstract translation: 小型摄像机具有提供变焦功能和广角视野的摄像镜头系统。 变焦功能由变焦镜头执行，而广角视角则通过广角转换器实现。 位于比变焦透镜更靠近物体的广角转换器包括负透镜，正透镜和位于负透镜和正透镜之间的反射部件。 通过使用反射构件，可以折叠从物体侧到相机的像侧延伸的图像拾取透镜系统的光轴。 光轴折叠的位置比图像侧更靠近物体侧。

公开(公告)号：US5983761A

公开(公告)日：1999-11-16

申请号：US898510

申请日：1997-07-22

Applicant: Kazuo Sasaki ,  Shuichi Kikuchi

Inventor： Kazuo Sasaki ,  Shuichi Kikuchi

IPC: G11B23/087 ,  B21D19/00 ,  B21D28/10 ,  B21D28/12 ,  B21D28/16 ,  B26F1/02 ,  B26F1/40 ,  G11B23/113 ,  B26D3/00

CPC classification number: B21D19/005 ,  B21D28/10 ,  B21D28/12 ,  B21D28/16 ,  B26F1/02 ,  B26F1/40 ,  Y10T428/24273 ,  Y10T428/24777 ,  Y10T83/05 ,  Y10T83/0572

Abstract: A method for punching a template is provided comprising the steps of partially punching the template by applying a first punch to a first surface of the template to form a recessed portion thereof and by applying a first die to a second surface of the template to form a projected portion thereof, so as to produce a first shear plane connected with the first surface on a peripheral surface of the recessed portion and a second shear plane connected with the second surface on a peripheral surface of said projected portion; returning the projected portion so as to be substantially aligned with the recessed portion by holding the first surface and the second surface between a second punch and a second die; and fully punching the template by applying a third punch to the second surface and a third die to the first surface to as to produce a third shear plane connected with the second surface on a peripheral surface of the recessed portion and a fracture plane connected between the third shear plane and the first shear plane thereby causing a portion of the template to fully punched therefrom.