公开(公告)号：US08395210B2

公开(公告)日：2013-03-12

申请号：US12680012

申请日：2008-09-26

Applicant: Yasuhiro Takeda ,  Seiji Otake ,  Shuichi Kikuchi

Inventor： Yasuhiro Takeda ,  Seiji Otake ,  Shuichi Kikuchi

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/0696 ,  H01L21/26586 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66689 ,  H01L29/7816

Abstract: The invention provides a DMOS transistor in which a leakage current is decreased and the source-drain breakdown voltage of the transistor in the off state is enhanced when a body layer is formed by oblique ion implantation. After a photoresist layer 18 is formed, using the photoresist layer 18 and a gate electrode 14 as a mask, first ion implantation is performed toward a first corner portion 14C1 on the inside of the gate electrode 14 in a first direction shown by an arrow A′. A first body layer 17A′ is formed by this first ion implantation. The first body layer 17A′ is formed so as to extend from the first corner portion 14C1 to under the gate electrode 14, and the P-type impurity concentration of the body layer 17A′ in the first corner portion 14C1 is higher than that of a conventional transistor.

Abstract translation: 本发明提供了一种DMOS晶体管，其中当通过倾斜离子注入形成体层时，泄漏电流降低，并且处于断开状态的晶体管的源极 - 漏极击穿电压增强。 在形成光致抗蚀剂层18之后，使用光致抗蚀剂层18和栅电极14作为掩模，在栅极电极14的内侧沿箭头A所示的第一方向进行第一离子注入 '。 通过该第一离子注入形成第一体层17A'。 第一主体层17A'形成为从第一角部14C1延伸到栅极14的下方，第一角部14C1中的主体层17A'的P型杂质浓度高于 常规晶体管。

公开(公告)号：US08207807B2

公开(公告)日：2012-06-26

申请号：US13032966

申请日：2011-02-23

Applicant: Shuichi Kikuchi ,  Morihiro Kuroda

Inventor： Shuichi Kikuchi ,  Morihiro Kuroda

IPC: H01F27/28 ,  H01F5/00

CPC classification number: H01F27/2871 ,  H01F27/2828 ,  H01F38/14

Abstract: A coil is formed by coaxially winding a second winding so as to be in intimate contact with an outer circumferential portion of a first winding wound about a winding shaft axis. In the first winding, one side of a winding wire is wound from an inner circumferential side to an outer circumferential side, the other side of the winding wire is drawn forth from the inner circumferential side to the outer circumferential side, while crossing the one side of the winding wire, and a thickness in a direction of the winding shaft axis in crossing portions of the one side of the winding wire and the other side of the winding wire is equal to a thickness in other portions.

Abstract translation: 通过同轴地缠绕第二绕组形成线圈，以便与围绕绕轴轴线缠绕的第一绕组的外圆周部分紧密接触。 在第一绕组中，绕线的一侧从内周侧向外周侧卷绕，绕线的另一侧从内周侧向外周侧拉出，同时跨越一侧 并且绕组线的一侧和绕组线的另一侧的交叉部分中的卷绕轴的方向上的厚度等于其它部分的厚度。

公开(公告)号：USRE43454E1

公开(公告)日：2012-06-05

申请号：US12257651

申请日：2008-10-24

Applicant: Yuji Iwaki ,  Shuichi Kikuchi ,  Teiko Hoshi ,  Naoki Inoue ,  Manabu Obata ,  Mitsuyoshi Kawaguchi

Inventor： Yuji Iwaki ,  Shuichi Kikuchi ,  Teiko Hoshi ,  Naoki Inoue ,  Manabu Obata ,  Mitsuyoshi Kawaguchi

IPC: G11B23/03

CPC classification number: G11B23/0326 ,  G11B23/0308 ,  G11B23/0316

Abstract: The present invention is related to a disc cartridge in which an optical disc, an inner shell and shutter members are housed in a main cartridge body unit, formed by abutting and combining upper and lower shells and in which the inner shell is run in rotation to cause the shutter members to open or close an aperture provided in the main cartridge body unit. The inner shell is formed by a resin molding portion comprised of a first molded portion for forming the inner shell and a second molded portion connected to the first molded portion. The second molded portion is provided at a position forming the aperture in the inner shell and is connected to the first molded portion through a flanged thin-walled section. The inner shell is formed by severing the second molded portion and the flanged thin-walled section.

Abstract translation: 本发明涉及一种盘盒，其中光盘，内壳和挡板部件容纳在主盒体单元中，该盒式盘通过抵靠并组合上壳体和下壳体而形成，并且其中内壳旋转运动 导致活门构件打开或关闭设置在主盒体单元中的孔。 内壳由树脂成型部形成，该树脂成型部包括用于形成内壳的第一模制部分和连接到第一模制部分的第二模制部分。 第二模制部分设置在形成内壳中的孔的位置处并通过凸缘的薄壁部分连接到第一模制部分。 内壳通过切断第二模制部分和带凸缘的薄壁部分而形成。

公开(公告)号：US07629214B2

公开(公告)日：2009-12-08

申请号：US11392779

申请日：2006-03-28

Applicant: Seiji Otake ,  Shuichi Kikuchi

Inventor： Seiji Otake ,  Shuichi Kikuchi

IPC: H01L21/8244

CPC classification number: H01L29/0847 ,  H01L21/823892 ,  H01L29/1083 ,  H01L29/456 ,  H01L29/6659 ,  H01L29/7833

Abstract: Disclosed is that in a method of manufacturing a semiconductor device of the present invention, when first and second P type diffusion layers using as a backgate region, these layers are formed in such a way that their impurity concentration peaks are shifted, respectively. Then, in the backgate region, a concentration profile of a region where an N type diffusion layer is formed is gradually established. After that, impurity ions, which form the N type diffusion layer, are implanted, and thereafter a thermal treatment is performed to diffuse the N type diffusion layer in a y shape at a lower portion of a gate electrode. This manufacturing method makes it possible to implement an electric filed relaxation in a drain region.

Abstract translation: 公开了在本发明的半导体器件的制造方法中，当使用作为背栅区域的第一和第二P型扩散层时，这些层分别以其杂质浓度峰偏移的方式形成。 然后，在背栅区域逐渐建立形成有N型扩散层的区域的浓度分布。 之后，注入形成N型扩散层的杂质离子，然后进行热处理，以使n型扩散层在栅电极的下部以y形扩散。 这种制造方法使得可以在漏极区域中实现电场弛豫。

公开(公告)号：US20080273259A1

公开(公告)日：2008-11-06

申请号：US12112830

申请日：2008-04-30

Applicant: Hidetoshi Honda ,  Takaaki Sanpei ,  Shuichi Kikuchi ,  Yasuaki Kano ,  Fumiharu Sudo ,  Katsumi Maekawa

Inventor： Hidetoshi Honda ,  Takaaki Sanpei ,  Shuichi Kikuchi ,  Yasuaki Kano ,  Fumiharu Sudo ,  Katsumi Maekawa

IPC: G11B5/008 ,  G11B23/02

CPC classification number: G11B15/32 ,  G11B15/60 ,  G11B23/08728

Abstract: A magnetic tape cartridge includes a cartridge case, a pair of cylindrical hubs rotatably provided in the cartridge case, and a magnetic tape laid between the hubs and wound around outer peripheries of the hubs. Each of the hubs has an inner diameter portion provided with a height-position determining member. The height-position determining member determines a height position of the hub in the magnetic tape cartridge by contacting a driving shaft inserted in the hub when the magnetic tape cartridge is mounted in a magnetic recording and reproducing apparatus.

Abstract translation: 磁带盒包括盒壳体，可旋转地设置在盒壳体中的一对圆柱形轮毂，以及铺设在轮毂之间并缠绕在轮毂外周的磁带。 每个轮毂具有设置有高度位置确定构件的内径部分。 当磁带盒安装在磁记录和再现装置中时，高度位置确定部件通过接触插入到轮毂中的驱动轴来确定磁带盒中的轮毂的高度位置。

公开(公告)号：US20080164556A1

公开(公告)日：2008-07-10

申请号：US11862585

申请日：2007-09-27

Applicant: Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Shuji Tanaka

Inventor： Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Shuji Tanaka

IPC: H01L29/866

CPC classification number: H01L27/0788 ,  H01L27/0255 ,  H01L29/0615 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/47 ,  H01L29/866 ,  H01L29/872

Abstract: There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.

Abstract translation: 在肖特基势垒二极管中存在反向漏电流变得过大的问题。 本发明的半导体器件包括形成在N型外延层中的P型第一和第二阳极扩散层，在外延层中形成的N型阴极扩散层，形成在外延层中的P型第三阳极扩散层 以便围绕第一和第二阳极扩散层并朝向阴极扩散层延伸，以及形成在第一和第二阳极扩散层上的肖特基势垒金属层。

公开(公告)号：US07345847B2

公开(公告)日：2008-03-18

申请号：US10993559

申请日：2004-11-19

Applicant: Shuichi Kikuchi ,  Osamu Yamaura ,  Kazuo Sasaki ,  Hitomi Chiba

Inventor： Shuichi Kikuchi ,  Osamu Yamaura ,  Kazuo Sasaki ,  Hitomi Chiba

IPC: G11B23/02

CPC classification number: G11B23/107

Abstract: A tape cartridge is configured to include a cartridge case, a hub, around which a magnetic tape is wound around and is housed in the cartridge case rotatably, and a drive apparatus for driving the hub to rotate, the drive apparatus being arranged between a bottom portion of the hub and the cartridge case.

Abstract translation: 磁带盒被配置为包括盒壳体，轮毂，磁带围绕其缠绕并被容纳在盒壳体中可旋转的驱动装置和用于驱动轮毂旋转的驱动装置，驱动装置布置在底部 轮毂和盒体的一部分。

公开(公告)号：US07318559B2

公开(公告)日：2008-01-15

申请号：US10541509

申请日：2004-01-08

Applicant: Hitomi Chiba ,  Shuichi Kikuchi ,  Kazuo Sasaki ,  Takaaki Sanpei ,  Mitsue Sakurai

Inventor： Hitomi Chiba ,  Shuichi Kikuchi ,  Kazuo Sasaki ,  Takaaki Sanpei ,  Mitsue Sakurai

IPC: G11B23/107

CPC classification number: G11B15/674 ,  G11B23/037 ,  G11B23/107

Abstract: A tape cartridge that has a clamp force to a block body and that secures a leader tape to a leader block is provided.Nail portions (63a, 64a) formed on the outer surface sides of a pair of leg portions (63, 64) of a clamper (36′) are secured to securing grooves (53, 54) formed on side walls of a assembling concave portion (50) of a block body (40) to secure the block body (40) and the clamper (36′). At this point, with concave grooves (73, 74) and a reinforcement rib (75) formed on an inner surface side of a base portion (60) that composes the clamper (36′) in the elongation direction of the leg portions 63 and 64. Thus, when the clamper (36′) is pushed, it can be prevented from being damaged and a desired clamp force can be obtained.

Abstract translation: 提供了具有对块体的夹紧力并将引导带固定到引导块的带盒。 形成在夹持器（36'）的一对腿部（63,64）的外表面侧上的钉部（63a，64a）被固定到形成在组装的侧壁上的固定槽（53,54） 块体（40）的凹部（50），以固定块体（40）和夹持器（36'）。 此时，在脚部63的延伸方向上构成夹持器（36'）的基部（60）的内表面侧上形成有凹槽（73,74）和加强肋75， 64。 因此，当夹持器（36'）被推动时，可以防止其被损坏并且可以获得期望的夹紧力。

公开(公告)号：US07294551B2

公开(公告)日：2007-11-13

申请号：US10852444

申请日：2004-05-24

Applicant: Shuichi Kikuchi ,  Eiji Nishibe

Inventor： Shuichi Kikuchi ,  Eiji Nishibe

IPC: H01L21/336

CPC classification number: H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

Abstract: A semiconductor device has a gate electrode formed on a P type semiconductor substrate via gate oxide films. A first low concentration (LN type) drain region is made adjacent to one end of the gate electrode. A second low concentration (SLN type) drain region is formed in the first low concentration drain region so that the second low concentration drain region is very close to the outer boundary of the second low concentration drain region and has at least a higher impurity concentration than the first low concentration drain region. A high concentration (N+ type) source region is formed adjacent to the other end of said gate electrode, and a high concentration (N+ type) drain region is formed in the second low concentration drain region having the designated space from one end of the gate electrode.

Abstract translation: 半导体器件具有通过栅极氧化膜在P型半导体衬底上形成的栅电极。 第一低浓度（LN型）漏极区域与栅电极的一端相邻。 在第一低浓度漏极区域形成第二低浓度（SLN型）漏极区域，使得第二低浓度漏极区域非常接近第二低浓度漏极区域的外边界，并且至少具有比 第一个低浓度排放区域。 在所述栅电极的另一端附近形成高浓度（N +型）源极区，并且在从所述栅极的一端的具有指定空间的所述第二低浓度漏极区域形成高浓度（N +型）漏极区 电极。

公开(公告)号：US20070166925A1

公开(公告)日：2007-07-19

申请号：US11617517

申请日：2006-12-28

Applicant: Yasuhiro Takeda ,  Mitsuaki Morigami ,  Satoru Shimada ,  Kazuhiro Yoshitake ,  Shuichi Kikuchi ,  Seiji Otake ,  Toshiyuki Ohkoda

Inventor： Yasuhiro Takeda ,  Mitsuaki Morigami ,  Satoru Shimada ,  Kazuhiro Yoshitake ,  Shuichi Kikuchi ,  Seiji Otake ,  Toshiyuki Ohkoda

IPC: H01L21/336 ,  H01L21/3205

CPC classification number: H01L29/7809 ,  H01L21/743 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/781

Abstract: A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the surface of the semiconductor substrate. Semiconductor elements, which include sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer, are formed in a semiconductor element formation region. A planar wiring layer is embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.

Abstract translation: 半导体器件包括在半导体衬底的表面中形成的沟槽。 导体嵌入在沟槽中。 导电层被布置成与半导体衬底的表面上的沟槽相邻。 包括由导体和导电层之一提供的源和由导体和导电层中的另一个提供的漏极的半导体元件形成在半导体元件形成区域中。 在整个半导体元件形成区域的半导体衬底内嵌有平面布线层，并与导体连接。